• 제목/요약/키워드: H-gate

검색결과 626건 처리시간 0.044초

New Soft-Switching Current Source Inverter for a Photovoltaic Power System

  • Han, Byung-Moon;Kim, Hee-Jung;Baek, Seung-Taek
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • 제3B권1호
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    • pp.37-43
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    • 2003
  • This paper proposes a soft-switching current source inverter for a photovoltaic power system. The proposed inverter has an H-type switched-capacitor module composed of two semiconductor switches, two diodes, and an LC resonant circuit. The operation of the proposed system was analyzed by a theoretical approach with equivalent circuits and was verified by computer simulations with SPICE and experimental implementation with a hardware prototype. The proposed system could be effectively applied for the power converter of photovoltaic power system interconnected with the AC power system.

감이온 전양효과 트랜지스트 (Ion Sensitive Field Effect Transistor)

  • 손병기
    • 대한전자공학회논문지
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    • 제18권5호
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    • pp.22-29
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    • 1981
  • 게이트절연층을 위한 HCI 열처리법 텅그스텐 metallization 및 fumed silica epoxy를 쓴 다중층 encapsulation 기술을 감이온 전장효과 트랜지스터(ISFET) 제조에 활용하고 이의 동작특성을 조사하였다. 또 ISFET를 위한 이론적 모형을 제시하고 이 것이 실험사실과 잘 일치함을 보였다. 제조된 ISFET는 빠른 반응, 긴 수명 및 작은 이압특성을 나타내었는데, 특히 안정부는 크게 개선되었다.

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ALD법으로 성장시킨 $Al_2$O$_3$ 박막의 특성분석 (Characteristic Analysis of $Al_2$O$_3$Thin Films Grown by Atomic Layer Deposition)

  • 성석재;김동진;배영호;이정희
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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    • pp.185-188
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    • 2001
  • In this study, $Al_2$O$_3$films have been deposited with Atomic Layer Deposition(ALD) for gate insulator for MPTMA and $H_2O$ at low temperature below 40$0^{\circ}C$ . Conventional methods of $Al_2$O$_3$thin film deposition have suffered from the poor step coverage due to reduction of device dimension and increasing contact/via hole aspect ratio. ALD is a self-limiting growth process with controlled surface reaction where the growth rate is only dependent on the number of growth cycle and the lattice parameter of materials. ALD growth process has many advantages including accurate thickness control, large area and large batch capability, good uniformity, and pinholes freeness.

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사용차 구동축의 진동발생 메카니즘의 규명 (Vibration Excitation Mechanism of Commercial Vehicle Driveline)

  • Park, B.Y.
    • 한국정밀공학회지
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    • 제12권12호
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    • pp.109-119
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    • 1995
  • A driveline incorporating universal joints when driving through an angle can excite various components in a vehicle with second order excitation of torsional and bending vibrations, being transmitted either audibly(noise), or physically(vibration). For a certain range of vehicle dpeed noises can be radiated from the cab wall, in which resonances occur by the excitations transmitted from the driveline as a vibration source. In this paper, the excitation mechanism of cab noises is studied especially for the vehicle speed range of 65 .approx. 75 km/h through the simulation for torsional vibrations of the driveline and for bending vibrations of the cab of an 11 Ton grade Cargo Truck, and verified additionally by vibration and noise measurements. As a result, it is found that the uncomfortable noises in the cab are caused mainly by the abrupt increase of the joint angle of driveline near the axle differential resulted from the excessive clearance alignment of the leaf spring gate.

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절삭력의 동적 성분을 이용한 플랭크마모의 평가(I) (Flank Wear Estimation Using Dynamic Cutting Force(l))

  • Kwon, Y.K.;Oh, S.H.;Seo, N.S.
    • 한국정밀공학회지
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    • 제14권8호
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    • pp.115-121
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    • 1997
  • The in-process detection of the tool wear is one of the most important technologies in completely auto- matic operation of machine tool. In this research, using the tools having flank wear, the dynamic compo- nent of cutting forces is considered to be available for identifying the cutting process. In order to investi- gate this relation in detail, the cutting forces in turning of workpiece made of aluminum were measured by dynamometer of piezoelectric type, and the dynamic components of cutting force were analyzed. The fre- quency analysis, probability density analysis and RMS analysis of the dynamic components were carried out independently. Through the experiments, the characteristics of the tool system have a large effect on the dynamic component of cutting forces. As a result, it is shown that the dynamic cutting force was able to detect flank wear accurately.

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$HfO_2$ dielectrics를 이용한 reactive sputtering TaN gate electrode 의 특성분석 (Characterization of reactive sputtering TaN fate electrode on $HfO_2$ dielectrics)

  • 김영순;이태호;안진호
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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    • pp.185-190
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    • 2003
  • 고유전물질인 $HfO_2$ 극박막에 사용될 TaN metal 전극에 대한 특성에 대한 연구를 하였다. 고유전물질인 $HfO_2$는 4" p-type wafer를 SCI cleaning후 ALD(atomic layer deposition)을 통해 $50\AA$를 증착하였다. Ff source는 TEMAH를 이용하였으며 Oxygen source는 $H_2O$를 이용하였다. 이렇게 증착한 $HfO_2$ 극박막에 Ta target을 이용하여 질소 가스를 Ar가스에 첨가하여 reactive sputtering을 통해서 TaN 전극을 증착하였다. TaN 박막의 증착두께는 a--step과 TEM을 통해서 확인하였으며 면저항은 four point probe를 이용하여 측정하였다. 이렇게 증착된 $HfO_2/TaN$구조에 대한 전기적 특성을 측정하였다.

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RTMOCVD법에 의해 제조된 Ta2O5 박막의 특성 (Characteristics of Ta2O5 thin film prepared by RTMOCVD)

  • 소명기
    • 산업기술연구
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    • 제19권
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    • pp.101-105
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    • 1999
  • Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

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비정질 실리콘 박막 트랜지터 포화전압 대 전류특성의 새로운 모델 (Fabrication and New Model of Saturated I-V Characteristics of Hydrogenerated Amorphous Silicon Thin Film Transistor)

  • 이우선;강용철;양태환;정해인
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 추계학술대회 논문집
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    • pp.3-6
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    • 1992
  • A new analytical expression for the saturated I-V characteristics of hydrogenerated amorphous silicon thin film transistors(a-si:H TFT) is presented and experimentally verified. The results show that the experimental transfer and output characteristics at several temperatures are easily modeled. The model is based on three functions obtained from the experimental data of $I_D$ versus $V_G$. Theoretical results confirm the simple form of the model in terms of the device geometry. It was determined that the saturated drain current increased at a fixed gate voltage and the device saturated at increasingly larger drain voltages while the threshold voltages decreased.

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SiNx의 Substrate temperature와 gas ratio의 변화에 따른 특성

  • 백경현;장경수;이원백;이준신
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.250-250
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    • 2010
  • Flexible display의 발전에 따라 점차 고온 공정에서 plastic 기판에 영향을 주지 않는 저온 공정으로 변화해 가고 있다. 이러한 발전에 따라 공정온도에 따른 SiNx의 특성 분석을 위해 우선 150C~300C에서 SiNx의 박막을 증착하였다. gas ratio (SiH4:NH3=4:60)와 Power (50W), 공정시간(25min)을 고정하고 온도만을 가변하여 박막의 특성을 분석하였다. 이후에 150C로 온도를 고정 후 gas ratio를 가변하고 Power (40W)와 온도(150C)는 고정 후 실험을 진행하여, 150C에서 최적화된 gas ratio를 알아내도록 하였다. 위의 실험은 p-type 실리콘 웨이퍼 위에 SiNx 박막 증착 후 굴절률과 증착률을 측정하였고, Al 전극을 증착하여 MIS구조를 구현하여, gate voltage에 따른 capacitance를 측정하였다. 이번 논문에서는 SiNx의 Substrate temperature와 gas ratio의 변화에 따른 다양한 특성을 확인하고 이를 체계적으로 분석하였다.

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공리적 기법에 의한 품질 향상 방안 (Product's quality improvement plane of parts for Injection Molding using Axiomatic approach)

  • 배진우;박홍석
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2006년도 춘계학술대회 논문집
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    • pp.355-356
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    • 2006
  • This paper proposes an Molding error compensation method that improves accuracy with geometry information of injected parts using three-dimensional measuring instrument. a traditional mold design has been conducted by an experience-based trial and error, whereby generally the mold designer would decide the gate location and processing conditions. as a natural consequence, almost all creats inferior goods. It's just a process of trial and error and caught in a vicious circle. Due to this reason, this paper uses a three-dimensional measuring instrument, a commercial analysis package of injection molding(Moldflow, MPI) to analysis a state of flux. In addition to that axiomatic approach.

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