• Bulletin of the Korean Chemical Society
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• 제24권5호
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• pp.605-609
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• 2003

The lower-order lithium organocyanocuprate compound, (THF)₃Li(NC)Cu($C_6$H₃-2,6-Mes₂) (1), and the bulky terphenyl Grignard reagent, Br(THF)₂Mg($C_6$H₃-2,6-Trip₂) (2), have been synthesized and structurally characterized both in the solid state by single crystal x-ray crystallography and in solution by multi-nuclear NMR and IR spectroscopy. The compound (1) was isolated as a monomeric contact ion-pair in which the C (organic ipso)-Cu-CN-Li atoms are coordinated linearly. The lithium has a tetrahedral geometry as a result of solvation by three THF molecules. The compound (1) is the first example of fully characterized monomeric lower order lithium organocyanocuprate. The bulky Grignard reagent (2) was also isolated as a monomer in which the magnesium, solvated by two THF molecules, has a distorted tetrahedral geometry. The crystals of (1) possess triclinic symmetry with the space group $P{\={1}}$, Z = 2, with a = 12.456(3) Å, b = 12.508(3) Å, c = 13.904(3) Å, α = 99.81°, β = 103.72(3)°, and γ = 119.44(3)°. The crystals (2) have a monoclinic symmetry of space group $P2_{1/C}$, Z = 4, with a = 13.071(3) Å, b = 14.967(3) Å, c = 22.070(4) Å, and β = 98.95(3)°.

• 한국재료학회지
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• 제21권6호
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• Journal of Plant Biotechnology
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• 제46권1호
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• pp.9-16
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• 2019

본 연구는 철피석곡의 PLB 기내 대량증식 방법에 대한 기초자료를 제공함으로써 다양한 분야의 소재활용 수요를 충족시키고 아울러 멸종위기에 처해 있는 철피석곡을 보존하고 수행하였다. 종자유래의 PLB 재 증식에는 H3P4 기본배지에 NAA $0.1mg{\cdot}L^{-1}$과 kinetin $0.1mg{\cdot}L^{-1}$를 혼용한 배지가 가장 적합하였다. H3P4 기본배지 내 탄소원으로 sucrose $10g{\cdot}L^{-1}$를 첨가 했을 때 PLB의 생장이 가장 양호하였다. 재 증식된 PLB로부터 shoot 형성율은 1/4MS 또는 H1P2 배지에 sucrose를 $10g{\cdot}L^{-1}$ 첨가한 배지에서 가장 높았고 shoot의 초장도 길어졌다.

• 반도체디스플레이기술학회지
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• 제21권2호
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• pp.123-126
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• 2022

We investigated deep levels in n-type 4H-SiC epitaxy layer of the Positive-Intrinsic-Negative diode and Schottky barrier diodes by using deep level transient spectroscopy. Despite the excellent performance of 4H-SiC, research on various deep level defects still requires a lot of research to improve device performance. In Positive-Intrinsic-Negative diode, two defects of 196K and 628K are observed more than Schottky barrier diode. This is related to the action of impurity atoms infiltrating or occupying the 4H-SiC lattice in the ion implantation process. The I-V characteristics of the Positive-Intrinsic-Negative diode shows about ~100 times lower the leakage current level than Schottky barrier diode due to the grid structures in Positive-Intrinsic-Negative. As a result of comparing the capacitance of devices diode and Schottky barrier diode devices, it can be seen that the capacitance value lowered if it exists the P implantation regions from C-V characteristics.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2008년도 추계학술대회 논문집
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• pp.203-206
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• 2008

Transformation of austenite to martensite during cold rolling has been widely used to strengthen metastable austenitic stainless steel grades. Aging treatment of cold worked metastable austenitic stainless steels, including ${\alpha}'$-martensite phase, results in the further increase of strength, when aging is performed in $200^{\circ}C$ to $450^{\circ}C$ temperature range. The purpose of the present study was to evaluate the effect of time and temperature on the stress-strain behavior of cold worked austenitic stainless steels. The amount of ${\alpha}'$-martensite during cold working and aging was examined by ferrite scope and X-ray diffraction (XRD). During aging at $450^{\circ}C$ for 1hr, tensile strength dramatically increased by 150MPa. Deformed metastable austenitic steels containing the "body-centered" ${\alpha}'$-martensite are strengthened by the diffusion of interstitial solute atoms during aging at low temperature.

• Bulletin of the Korean Chemical Society
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• 제32권5호
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• pp.1471-1474
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• 2011

A series of new polymers containing 1,2,3-triazoles were synthesized and their structures and properties were characterized by FT-IR, $^1H$ NMR, TGA, DSC and GPC. The results showed that the polymers modified by alkyl groups had good solubility, thermal stability and reasonable molecular weights. It was also demonstrated that the properties of fluorine-containing polymers were seriously affected by fluorine atoms with hydrophobic and chemical proof properties.

• Bulletin of the Korean Chemical Society
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• 제34권7호
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• pp.2171-2175
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• 2013

The electronic structure and elastic properties of the 4d transition metal carbides MC (M = Y, Zr, Nb, Rh) were studied by means of extended H$\ddot{u}$ckel tight-binding band electronic structure calculations. As the valence electron population of M increases, the bulk modulus of the MC compounds in the rocksalt structure does not increase monotonically. The dominant covalent bonding in these compounds is found to be M-C bonding, which mainly arises from the interaction between M 4d and C 2p orbitals. The bonding characteristics between M and C atoms affecting the variation of the bulk modulus can be understood on the basis of their electronic structure. The increasing bulk modulus from YC to NbC is associated with stronger interactions between M 4d and C 2p orbitals and the successive filling of M 4d-C 2p bonding states. The decreased bulk modulus for RhC is related to the partial occupation of Rh-C antibonding states.

• 한국세라믹학회지
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• 제22권6호
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• pp.87-93
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• 1985

The hematite the magetite and the maghemite thin film were prepared by oxidation and reductino of the vaccum-evaporated iron thin film. Interre;atoms between film preparation process and the electrical properties were investigated. At room temperature the electrical conductivity of the iron the hematite the magnetite and the maghemite thin film were $1{\times}10^4\Omega^{-1}cm^{-1}$, 2{\times}10^{-5}\Omega^{-1}cm^{-1}$, $3{\times}10^{-5}\Omega^{-1}cm^{-1}$, and $4{\times}10^{-5}\Omega^{-1}cm^{-1}$, resp-ectively. The surface of each thin film was dense and homogeneous. At the temperature that the iron thin film was converted into the hematite thin film the electrical conductivity decreased rapidly and the electrical con-ductivity of the hematite thin film increased as temperature increased. The hematite thin film was reduced to the magnetite thin film in H2 atmosphere. The electrical conductivity decreased rapidly at the temperature that the maghemite thin film is formed by oxidation of the magnetite thin film and the electrical conductivity of the maghemite thin film increased as temperature increased.

• 분석과학
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• 제12권2호
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• pp.171-175
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• 1999

Carbon paste electrodes, modified with podands containing more than two sulfur atoms, have been employed for the voltammetric determination of Ag(I) ion from aqueous solution. The voltammetric response was characterized with respect to paste composition, preconcentration method, kind of anion, variation of pH, Ag(I) ion concentration, and possible interferences. Linear calibration curves were obtained for Ag(I) ion concentration ranging from $1.0{\times}10^{-6}$ to $9.0{\times}10^{-5}M$, and detection limit was $5.0{\times}10^{-7}M$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.28.1-28.1
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• 2011

We deposited the carbon films on Ni substrates by thermal atomic layer deposition (th-ALD), for the first time, using carbon tetrabromide ($CBr_4$) precursors and H2 reactants at two different temperatures (573 K and 673 K). Morphology of carbon films was characterized by scanning electron microscopy (SEM). The carbon films having amorphous carbon structures were analyzed by X-ray photoemission spectroscopy (XPS) and Raman spectroscopy. As the working temperature was increased from 573 K to 673 K, the intensity of C1s spectra was increased while that of O1s core spectra was reduced. That is, the purity of carbon films containing bromine (Br) atoms was increased. Also, the thin amorphous carbon films (ALD 3 cycle) were transformed to multilayer graphene segregated on Ni layer, through the post-annealing and cooling process.