• Title/Summary/Keyword: Growth temperature reduction

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Influence of red mud additive on lightening of artificial aggregates containing coal bottom ash (석탄바닥재가 포함된 인공골재의 경량화에 미치는 적니 영향)

  • Kang, Min-A;Kang, Seung-Gu
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.1
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    • pp.41-46
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    • 2011
  • The artificial aggregates (AAs) composing of 2 wastes, coal bottom ash and dredged soil (7 : 3, weight ratio) were fabricated as a function of red mud contents,0~30 wt% using direct sintering method at $1050{\sim}1250^{\circ}C$ for 10 min, and those physical properties were evaluated. Especially, in order to analyze the red mud addition effect on the bloating phenomenon of AAs manufactured, the specific gravity and water absorption were measured and studied linked with the microstructural observation results. The lightening of AAs was enhanced due to increased bloating with increasing temperature and red mud contents. The AAS sintered at $1050{\sim}1150^{\circ}C$ showed well-developed black-coring structure, but for the specimens containing red mud sintered over $1200^{\circ}C$ generated excessive liquid and gas caused by reduction of $Fe_2O_3$, thus the black-coring part was gradually burst open out of shell of AAs. Particularly, all specimens containing 30 wt% red mud was burst up when sintered over $1100^{\circ}C$. The AAs containing no red mud sintered at $1200^{\circ}C$ had a specific gravity of about 1.2 and those containing 20 wt% had below 1.0 which are characters of lightweight aggregate.

Enhanced Tolerance to Oxidative Stress of Transgenic Potato (cv. Superior) Plants Expressing Both SOD and APX in Chloroplasts (SOD와 APX를 동시에 엽록체에 발현시킨 형질전환 감자 (cv. Superior)의 산화스트레스 내성 증가)

  • Tang, Li;Kwon, Suk-Yoon;Kim, Myoung-Duck;Kim, Jin-Seog;Kwak, Sang-Soo;Lee, Haeng-Soon
    • Journal of Plant Biotechnology
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    • v.34 no.4
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    • pp.299-305
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    • 2007
  • Oxidative stress is a major damaging factor for plants exposed to environmental stresses. Previously, we have generated transgenic potato (cv. Superior) plants expressing both CuZnSOD and APX genes in chloroplast under the control of an oxidative stress-inducible SWPA2 promoter (referred to as SSA plants) and selected the transgenic potato plant lines with tolerance against methyl viologen (MV)-mediated oxidative stress. When leaf discs of SSA plants were subjected to $3{\mu}M$ methyl viologen (MV), they showed approximately 40% less damage than non-transgenic (NT) plants. SSA plantlets were treated with $0.3{\mu}M$ MV stress, SSA plants also exhibited reduced damage in root growth. When 350 MV was sprayed onto the whole plants, SSA plants showed a significant reduction in visible damage, which was approximately 75% less damage than leaves of NT plants. These plants will be used for further analysis of tolerance to environmental stresses, such as high temperature and salt stress. These results suggest that transgenic potato (cv. Superior) plants would be a useful plant crop for commercial cultivation under unfavorable growth conditions.

Effect of Phosphorus Stress on Photosynthesis and Nitrogen Fixation of Soybean Plant under $CO_2$ Enrichment (대기 $CO_2$ 상승시 인산공급이 식물체의 광합성 및 질소고정에 미치는 영향)

  • Sa, Tong-Min
    • Applied Biological Chemistry
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    • v.40 no.2
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    • pp.134-138
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    • 1997
  • The objective of this study was to examine the effect of phosphorus deficiency on nitrogen fixation and photosynthesis of nitrogen fixing soybean plant under $CO_2$ enrichment condition. The soybean plants(Glycine max [L.] Merr.) inoculated with Bradyrhizobium japonicum MN 110 were grown with P-stressed(0.05 mM-P) and control(1 mM-P) treatment under control$(400\;{\mu}l/L\;CO_2)$ and enrichment$(800\;{\mu}l/L\;CO_2)$ enviromental condition in the phytotron equipped with high density lamp$(1000\;{\mu}Em^{-2}S^{-1})$ and $28/22^{\circ}C$ temperature cycle for 35 days after transplanting(DAT). At 35 DAT, phosphorus deficiency decreased total dry mass by 64% in $CO_2$ enrichment condition, and 51% in control $CO_2$ condition. Total leaf area was reduced significantly by phosphorus deficiency in control and enriched $CO_2$ condition but specific leaf weight was increased by P deficiency. Phosphorus deficiency significantly reduced photosynthetic rate(carbon exchange rate) and internal $CO_2$ concentration in leaf in both $CO_2$ treatments, but the degree of stress was more severe under $CO_2$ enrichment condition than under control $CO_2$ environmental condition. In phosphorus sufficient plants, $CO_2$ enrichment increased nodule fresh weight and total nitrogenase activity(acetylene reduction) of nodule by 30% and 41% respectively, but specific nitrogenase activity of nodule and nodule fresh weight was not affected by $CO_2$ enrichment in phosphorus deficient plant at 35 DAT. Total nitrogen concentrations in stem, root and nodule tissue were significantly higher in phosphorus sufficient plant grown under $CO_2$ enrichment, but nitrogen concentration in leaf was reduced by 30% under $CO_2$ enrichment. These results indicate that increasing $CO_2$ concentration does not affect plant growth under phosphorus deficient condition and phosphorus stress might inhibit carbohydrate utilization in whole plant and that $CO_2$ enrichment could not increase nodule formation and functioning under phosphorus deficient conditions and phosphorus has more important roles in nodule growth and functioning under $CO_2$ enrichment environments than under ambient condition.

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The recombination velocity at III-V compound heterojunctions with applications to Al/$_x$/Ga/$_1-x$/As-GaAs/$_1-y$/Sb/$_y$/ solar cells

  • 김정순
    • 전기의세계
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    • v.28 no.4
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    • pp.53-63
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    • 1979
  • Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

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Study on Removal Time of Former Crop and Bacterial Wilt Reduction in Non-Tillage Tomato Culture by Grafting with EG-203 after Strawberry Cropping (가지대목(EG-203)을 이용한 딸기 후작 토마토 무경운 재배에서의 풋마름병 경감 및 전작물 제거시기 구명 연구)

  • Lee, Mun-Haeng;Park, Guen-Se;Lee, Hee-Keyung;Lee, Hwan-Gu;Kim, Keyng-Jae;Lee, Sun-Gye;Cho, Pyeng-Hwa;Kim, Young-Shik;Kim, Sung-Eun;Han, Kyoung Suk;Hwang, Gap-Chun
    • Korean Journal of Organic Agriculture
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    • v.22 no.4
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    • pp.657-665
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    • 2014
  • This study was carried out to study the effect of eggplant (EG203) grafting and strawberry removal time on succeeding tomato cropping in high temperature season. In non tillage culture, bacterial wilt incidence was 30% and 0% in nongrafting and eggplant (EG203) grafting while 25% in non-grafting and 0% in eggplant (EG203) grafting in tillage culture. Commercial yield was similar in tillage and non-tillage culture using EG-203 grafting as 2,693 kg/10a and 2,657 kg/10a respectively with no difference in soluble solid content and hardness. Strawberry removal time after tomato planting enhanced plant height and internode length in 20days and 30days later removal while no difference in other growth characters. Commercial yield was higher as 1,885 kg/10a in strawberry removal before tomato planting than 1,678 kg/10a in 30days later removal. From this research, strawberry removal time should be determined by considering strawberry price and growth and expecting profit by succeeding tomato cropping.

Effect of composition on the structural and thermal properties of TiZrN thin film (TiZrN 박막의 조성이 구조적 특성 및 열적 특성에 미치는 영향)

  • Choi, Byoung Su;Um, Ji Hun;Seok, Min Jun;Lee, Byeong Woo;Kim, Jin Kon;Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.1
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    • pp.37-42
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    • 2021
  • The effect of chemical composition on the structural and thermal properties of TiZrN thin films was studied. As the Zr fraction in the deposited TixZr1-xN (x = 0.87, 0.82, 0.7, 0.6, and 0.28) increased, microstructural changes consisted of reduction in the grain size and a gradual transition from columnar structure to granular structure were observed. In addition, it was also confirmed that a gradual crystal phase transition from TiN to TiZrN has occurred as the Zr fraction increased up to 0.4. After heat treatment at 900℃, Ti0.82Zr0.18N and Ti0.7Zr0.3N layers were converted to a form in which rutile phase TiO2 and TiZrO4 oxides coexist, while Ti0.6Zr0.4N layer was converted to TiZrO4 oxide. Among the five compositions of TiZrN films, the Ti0.6Zr0.4N showed the best high temperature stability and produced a significant enhancement in the thermal oxidation resistance of Inconel 617 through suppressing the surface diffusion of Cr caused by thermal oxidation of the Inconel 617 substrate.

Morphology control of glassy carbon coating layer to additive ethylene glycol and phenolic resin (페놀수지 및 에틸렌 글리콜을 첨가한 유리질 카본 코팅층의 물성 제어)

  • Joo, Sang Hyun;Joo, Young Jun;Lee, Hyuk Jun;Sim, Young Jin;Park, Dong Jin;Cho, Kwang Youn
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.3
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    • pp.89-95
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    • 2022
  • In this study, glassy carbon coating was performed on the graphite using a phenolic resin and a curing agent was mixed with ethylene glycol as an additive to form the uniform surface. The phenolic resin was dried and cured under the environments of hot air, then converted into a glassy carbon layer by pyrolysis at 500~1,500℃. FTIR, XRD, SEM analysis, and density/porosity/contact angle measurement were performed for characterization of glassy carbon. The pyrolysis temperature for high-quality glassy carbon was optimized to be about 1,000℃. As the content of the additive increased, the effect of reducing surface defects on the coated surface, reduction of porosity, increase of contact angle, and increase of density were investigated in this study. The method of forming a glassy carbon coating layer through an additive is expected to be applicable to graphite coating and other fields.

Synchronization of Flowering for Hybrid Com Seed Production by Clipping Young Plants Clear Polyethylene Mulching and Planting Date (옥수수 교잡종채종에 있어 유식물절단 비닐피복 및 파종기에 의한 자식계통 개화기조절)

  • Kang, Y.K.;Park, K.Y.;Ham, Y.S.
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.28 no.4
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    • pp.481-487
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    • 1983
  • The need to synchronize flowering in two lines of different maturities is frequently encountered in hybrid com (Zea mays L.) seed production. To establish the methods for synchrony of flowering in parent lines of different maturities be effects of clipping at 4 and 6-leaf stages of growth and two levels, clear polyethylene mulching and five different planting dates on flowering date growth and seed yield of two dent com inbred lines of different maturities were evaluated Clipping just above the shoot-apex delayed pollen sheeding 6 to 9days and silking 5 to 13 days but reduced stand and seed yield 30 to 70% and 67 to 81%. respectively. Clipping 5cm above the shoot apex delayed flowering 1 to 4 days without stand reduction but reduced yield 3 to 29%. Laterclipping was slightly more effective for delaying flowering than earlier clipping but reduced stand more severely when clipped just above the shoot apex. Under clear polyethylene film mulching, flowering of two lines was 13 to 15 days earlier and seed yield of B68 (late line) was significantly increased. As planting was delayed from April 18 to June 13, the number of days from planting to flowering of two lines decreased due to increase in air temperature. However, growing degree days (GDD) from planting to flowering of each lines was similar regardless planting dates indicating that GDD can be satisfactoryly used for choosing the planting dates of parent lines of different maturities. Seed yields of two lines were decreased with delaying planting dates.

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Reducing Ammonia Emissions and Enhancing Plant Growth through Co-application of Microbes and Methanol in Sewage Sludge Treatment (하수슬러지 처리에서 미생물과 메탄올 적용을 통한 암모니아 배출 감소 및 식물 성장 향상 연구)

  • Jin-Won Kim;Hee-Gun Yang;Hee-Jong Yang;Myeong-Seon Ryu;Gwang-Su Ha;Su-Ji Jeong;Soo-Young Lee;Ji-Won Seo;Do-Youn Jeong
    • Journal of the Korean Society of Environmental Restoration Technology
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    • v.26 no.2
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    • pp.13-24
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    • 2023
  • Sewage sludge has been widely used as an organic fertilizer in agriculture. However, sewage sludge can cause serious malodor problems resulting from the decomposition of organic compounds in anaerobic conditions. The malodor of sewage sludge mainly occurs due to a low carbon to nitrogen ratio (C/N), high moisture, and low temperature, which are ideal conditions for ammonia emissions. Therefore, in this study, we investigated the reduction of the odor-causing ammonia nitrogen (NH3-N) in sewage sludge by co-application of microbes and methanol (MeOH). The physico-chemical properties of the municipal sewage sludge showed that the odor was mainly caused by a higher NH3-N content (2932.2 mg L-1). Supplementation with MeOH (20%) as a carbon source in the sewage sludge significantly reduced the NH3-N up to 34.2% by increasing C/N ratio. Furthermore, the sewage sludge was treated with the NH3-N reducing and plant growth promoting (PGP) bacteria Stenotrophomonas rhizophila SRCM 116907. The treatment with S. rhizophila SRCM 116907 significantly increased the seedling vigor index of Lolium perenne (10.3%) and Chrysanthemum burbankii (42.4%). The findings demonstrate that supplementing sewage sludge with methanol significantly reduces ammonia emissions, thereby mitigating malodor problems. Overall, the study highlights the potential of using a microbial and methanol approach to improve the quality of sewage sludge as an organic fertilizer and promote sustainable agriculture.

Effect of Residual Chloride Ion on Thermal Decomposition Behaviour os Stannic Acid and Physical Properties of $SnO_2$ Powder Fabricated for Gas Sensor (가스센서용 $SnO_2$분말 제조시 잔류 염소이온이 Sn수화물의 열분해거동 및 분말물성에 미치는 영향)

  • Song, Guk-Hyeon;Choe, Byeong-U;Park, Jae-Hwan;Park, Sun-Ja
    • Korean Journal of Materials Research
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    • v.4 no.8
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    • pp.934-944
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    • 1994
  • Effects of residual chloride on thermal decomposition behaviour of a-stannic acid and physical properties of $SnO_{2}$ powder were observed. The powder was fabricated by hydroxide method; $\alpha$-stannic acid was precipitated by mixing acqueous solutions of $SnCl_{4}$ and $NH_{4}$OH . The precipitate was washed with $NH_{4}NO_{3}$ solution while washing was controlled to be of three grades to modify its residual chloride content. The precipitate was dried at $1100^{\circ}C$ ~ 24h and calcined in air at $500^{\circ}C$ ~ $1100^{\circ}C$ for one hour. Thermal decomposition behaviour of $\alpha$-stannic acid was examined by a DT-TGA and a FTIR. Chemical composition and physical properties of $SnO_{2}$ powder were observed by an AES, a BET and a TEM, respectively. With a reduction in chloride content, the relative crystallite size of $SnO_{2}$ powder slightly increased by a low-temperature-calcining. However, at a high calcining temperature(T), the reverse relation occured. It was suggested that chloride ion replaces part of lattice oxygen site of a-stannic acid. Also, chloride ion on the site was suggested to retard de-hydration as well as crystalization at a low T while to promote crystal growth of $SnO_{2}$ by forming oxygen vacancy at a high T.

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