• 통상정보연구
• /
• 제10권1호
• /
• pp.329-347
• /
• 2008

The purpose of this study is to examine the causal relationship between the exchange rate and economic growth, and to induce policy implications. In order to test whether time series data is stationary and the model is fitness or not, we put in operation unit root test, cointegration test. And we apply Granger causality based on an error correction model. The results indicate that uni-dierctional causality between exchange rate and economic growth is detected. Exchange rate impacts on economic growth, but economic growth don't impact on exchange rate. The analysis of impulse reaction function shows that the impulse of exchange rate impacts on Korean economic growth in negative direction. We can infer policy suggestion as follows: The fluctuation of exchange rate much affects economic growth, thus we must make a stable policy of exchange rate to continue economic growth.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
• /
• pp.45-48
• /
• 1998

For the single crystal growth of silicon, a global analysis of heat transfer in a CZ furnace was carried out using the finite element method, where the radiative heat transfer between the surfaces that possess both specular and/or diffuse reflectance components was taken into account, and then the effect of the specular reflection of the crystal and/or melt on the CZ crystal growth was numerically investigated.

• 한국지능시스템학회논문지
• /
• 제13권5호
• /
• pp.621-626
• /
• 2003

In this paper, we modeled a virtual life (VL) that reacts to the user s action according to its own behavioral characteristics and grows itself. We established some conditions with which such a VL is designed. Genetic Algorithm is used for the growth process that changes the VL s properties. In this process, the parameter values of the VL s properties are encoded as one chromosome, and the GA operations change this chromosome. The VL s reaction to the user s action is determined by these properties as well as the general expectation of each reaction. These properties are evaluated through 5 fitness measures so as to deal with multi-objective criteria. Here, we present the simulation of the growth Process, and show some experimental results.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.264.2-264.2
• /
• 2013

Molecular layer deposition (MLD) is sequential, self-limiting surface reaction to form conformal and ultrathin polymer film. This technique generally uses bifunctional precursors for stepwise sequential surface reaction and entirely organic polymer films. Also, in comparison with solution-based technique, because MLD is vapor-phase deposition based on ALD, it allows epitaxial growth of molecular layer on substrate and is especially good for surface reaction or coating of nanostructure such as nanopore, nanochannel, nanwire array and so on. In this study, polyurea film that consisted of phenylenediisocyanate and phenylenediamine was formed by MLD technique. In situ Fourier Transform Infrared (FTIR) measurement on high surface area SiO2 substrate was used to monitor the growth of polyurethane and polyurea film. Also, to investigate orientation of chemical bonding formed polymer film, plan-polarized grazing angle FTIR spectroscopy was used and it showed epitaxial growth and uniform orientation of chemical bones of polyurea films.

• 열처리공학회지
• /
• 제16권5호
• /
• pp.260-266
• /
• 2003

In order to study the interfacial reaction between Nb thin sheet and Fe-C-(Si) alloy with different Chemical compositions, they were cast-bonded. The growth of carbide layer formed at the interface after isothermal heat treatment at 1173K, 1223K, 1273K and 1323K for various times was investigated. The carbide formed at the interface was NbC and the thickness of NbC layer was increased linearly in proportional to the heat treating time. Therefore, It was found that the growth of NbC layer was controlled by the interfacial reaction. The growth rate constant of NbC layer was slightly increased with increase of carbon content when the silicon content is similar in the cast irons. However, as silicon content increases with no great difference in carbon content, the growth of NbC layer was greatly retarded. The calculated activation energy for the growth of NbC layer was varied in the range of 447.4~549.3 kJ/moI with the compositions of cast irons.

• 한국결정성장학회지
• /
• 제6권2호
• /
• pp.254-262
• /
• 1996

수열합성법을 이용하여 $1~3\;\mu\textrm{m}$의 입자 크기를 갖는 균일한 $Pb(Zr_{0.52}Ti_{0.48})O_{3}$ (PZT)분말을 제조하였다. 출발물질의 종류에 따라 반응조건이 다소 차이를 보였지만, 일반적으로 10 M의 KOH를 광화제로 사용하여, $180^{\circ}C$ 이상에서 2시간 동안 반응시켜 PZT 분말을 합성 할 수 있었다. 또한, 광화제의 농도, 수열반응 온도, 그리고 반응시간이 증가할수록 균일상의 분말이 형성됨을 보였다.

• 한국표면공학회지
• /
• 제32권3호
• /
• pp.303-306
• /
• 1999

On the effect of substrate bias at first stage of diamond synthesis at lower substrate temperature(approximately 673K) using microwave plasma CVD and effect of reaction gas system for the bias enhanced nucleation were studied. The reaction gas was mixture of methane and hydrogen or carbon monoxide and hydrogen. The nucleation density of applied bias -150V using $CH_4-H_2$ reaction gas system, significantly higher than that of $C-H_2$ reaction gas system. When the $CH_4-H_2$ reaction was used, nucleation density was increased because of existence of SiC as a interface for diamond nucleation. By use of this negative bias effect for fabrication of CVD diamond film using two-step diamond growth without pre-treatment, fabrication of the diamond film consist of diamond grains $0.2\mu\textrm{m}$ in diameter was demonstrated

• 한국결정성장학회지
• /
• 제5권2호
• /
• pp.109-121
• /
• 1995

SiC/Co 반응커플을 Ar/4 vol% $H_2$분위기하에서 $950^{\circ}C$에서 $1250^{\circ}C$ 범위에서 4시간에서 100시간까지 열처리하였다. $950^{\circ}C$ 이상의 온도에서의 고상반응으로 여러 가지 규소화물과 탄소석출이 형성되었다. 이 반응 zone에 있어서의 전형적인 반응층의 순서는 $SiC/CoSi + C/Co_2Si + C/Co_2Si/Co_2Si + C/{\cdots\cdots}/Co_2Si/Co$이었다. 그리고 탄소 석출거동을 동반한 주기적인 띠구조의 형성기구가 반응운동학과 열역학적인 고찰을 통하여 조사되어졌고 논하여졌다. 이 반응의 zone의 서장은 시간의 함수관계를 가지며 이러한 반응운동학이 반응상수의 측정을 통하여 제시되어진다. 또한 microhardness 측정을 통하여 반응 zone의 기계적인 물성이 조사되어졌다.

• 대한기계학회논문집B
• /
• 제32권3호
• /
• pp.181-189
• /
• 2008

GaAs film growth process from trimethylgallium(TMGa) and tertiary-butylarsine(TBAs) using a horizontal MOCVD reactor was numerically studied to explain the experimental result that the decreasing surface reaction rate as the increasing partial pressure of group III species. Using the non-linear model based on the Langmuir isotherm which considers the adsorption and desorption of molecules, film deposition over the entire reactor scale was predicted by computational fluid dynamics (CFD) with the aid of the parameters obtained from the selective area growth (SAG) technique. CFD Results using the non-linear surface reaction model with the parameters determined from the SAG experiments predicted too high film growth rate compared to the measured values at the downstream region where the temperature was decreased abruptly. The pairs of ($k_s^n$, K) from the numerical simulations was $(2.52{\times}10K^{-6}mol/m^2/s,\;1.6{\times}10^5m^3/mol)$, whereas the experimentally determined was $(3.58{\times}10^{-5}mol/m^2/s,\;6.9{\times}10^5m^3/mol)$.

• 한국결정성장학회지
• /
• 제14권3호
• /
• pp.110-114
• /
• 2004

반응온도 $75^{\circ}C$에서 $Ca(OH)_2$ slurry 및 NaOH의 혼합용액에 $Na_2CO_3$ 수용액의 농도 및 첨가방법을 변화시키면서 아라고나이트 침강성 탄산칼슘의 생성거동을 관찰하였다. 이 반응에서 $Na^+$ 이온은 탄산칼슘 격자내의 $Ca^{2+}$ 이온 자리에 치환되어 칼사이트의 성장을 지연시키고, 특정방향으로의 결정성장이 진행되어 침상형 아라고나이트의 생성을 유리하게 하는 것을 알 수 있었다. 또한, $CO_3^{2-}$ 이온농도 조절에 의한 반응속도의 감소는 균일침전반응을 유도하고, $Na^+$ 이온의 치환능력을 증대시켜 아라고나이트의 생성 및 성장을 촉진하는 것으로 판단되었다.