• 한국세라믹학회지
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• 제35권12호
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• pp.1329-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• 한국결정성장학회지
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• 제5권3호
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• pp.291-298
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• 1995

알루미나 고상소결체와 $CaMgSiO_4$간의 반응에 따른 반응상들의 성장 및 용해 거동을 $1600^{\circ}C$에서 열처리 시간을 변화하여 고찰하였다. 열처리시 알루미나는 $CaMgSiO_4$ 액상에 용융되어 중간에 반응상인 $CaO{\cdot}6Al_2O_3$와 최종 반응상인 $CaMgSiO_4$ 스피넬 형성이 관찰되었다. 중간상인$CaO{\cdot}6Al_2O_3$ 결정은 성장 모양과 용해 모양이 뚜렷하게 구분되었다.

• 한국표면공학회지
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• 제24권1호
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• pp.1-17
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• 1991

Understanding of the detailed reaction mechanisms during MOVPE and ALE is essential to further improve the properties of the grown crystals and the controllability of the growth parameters. The unified models for the detailed reaction paths are not available at this stage. The study, however, has been advanced to the extent that consensus on some of the reaction paths can be drawn from the scattered data. Metalakyls such as TMGa and TMIn seem to nearly fully decompose in the gas phase through homogeneous reaction at the typical MOVPE growth temperature. Hydrides such as AsH3 and PH3, on the contrary. seem to decompose heterogeneously onthe substrate surfaces as well as homogeneously in the gas phase. However, at lower temperatures, where ALE crystals are typically grown, the growth process is strongly dependent on the surface reactions. It seems that steric hindrance effects which the radicals reaching the substrate exhibit on the surface the growth rate a function of the metalalkyle supply durations. In addition, dydrogens released from hydrides seem to play an essential role in removing carbons leberated from the metalalkyls. High growth temperatures also seem to be effective in desorbing carbons from surface. The understanding of the reaction mechanisms was possible though diverse appraaches utilizing many ex-situ and in-situ diagnostic techniques and genuine experimental designs. It is the purpose of this paper to review and discuss many of these efforts and to draw some possible conclusions from them.

• 한국표면공학회지
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• 제24권1호
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• pp.1.1-1.1
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• 1991

Understanding of the detailed reaction mechanisms during MOVPE and ALE is essential to further improve the properties of the grown crystals and the controllability of the growth parameters. The unified models for the detailed reaction paths are not available at this stage. The study, however, has been advanced to the extent that consensus on some of the reaction paths can be drawn from the scattered data. Metalakyls such as TMGa and TMIn seem to nearly fully decompose in the gas phase through homogeneous reaction at the typical MOVPE growth temperature. Hydrides such as AsH3 and PH3, on the contrary. seem to decompose heterogeneously onthe substrate surfaces as well as homogeneously in the gas phase. However, at lower temperatures, where ALE crystals are typically grown, the growth process is strongly dependent on the surface reactions. It seems that steric hindrance effects which the radicals reaching the substrate exhibit on the surface the growth rate a function of the metalalkyle supply durations. In addition, dydrogens released from hydrides seem to play an essential role in removing carbons leberated from the metalalkyls. High growth temperatures also seem to be effective in desorbing carbons from surface. The understanding of the reaction mechanisms was possible though diverse appraaches utilizing many ex-situ and in-situ diagnostic techniques and genuine experimental designs. It is the purpose of this paper to review and discuss many of these efforts and to draw some possible conclusions from them.

• 한국결정성장학회지
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• 제11권1호
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• pp.14-19
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• 2001

NaX 제올라이트의 결정화 과정 중 온도에 따른 결정 크기를 측정하였다. 이때 선형결정성장속도 상수는 80, 90, 100$^{\circ}C$에 대해서 각각 0.0441$\mu\textrm{m}$/h, 0.0595$\mu\textrm{m}$/h 그리고 0.0972$\mu\textrm{m}$/h로 얻어졌다. 반응온도와 선형결정성장율 사이의 관계를 이용하여 활성화에너지는 43.243 kJ/mol 로 계산되었다. 결정화 반응의 종료는 각각 $80^{\circ}C$에서 20일 90$^{\circ}C$에서 16일, 100$^{\circ}C$에서 9일로 각각 나타났다. 반응온도의 증가에 따라서 최종생성물 결정크기는 감소할 뿐만 아니라 결정화 시간도 역시 감소하였다.

• 한국정밀공학회지
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• 제19권7호
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• pp.106-115
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• 2002

Growth characteristics of micro carbon structures fabricated by laser-assisted chemical vapor deposition are studied. Argon ion laser and ethylene were used as the energy source and reaction gas, respectively, to grow micro carbon rod through pyrolytic decomposition of the reaction gas. Experiments were performed at various conditions to investigate the influence of process parameters on growth characteristics such as the diameter or growth rate of the micro carbon rod with respect to reaction gas pressure and incident laser power. Reaction gas pressure in experiments ranges from 200 to 600Torr and the incident laser power from 0.3 to 3.8W. For these conditions, the diameter of the rod increases linearly with respect to the laser power but is almost independent of the reaction gas pressure. Growth rate of the rod changes little with gas pressure when the laser power remains below IW. For a constant reaction gas pressure, the growth rate increase with Increasing laser power, but the rate of increase decreases gradually, implying that the chemical vapor deposition condition changes from a kinetically-limited regime to a mass-transport-limited regime. When the carbon rod was grown at near threshold laser power, a very smooth surface is obtained on the rod. By continuously moving the focusing lens in the direction of growth, a micro carbon rod with a diameter of 287${\mu}{\textrm}{m}$ and aspect ratio of 100 was fabricated..

• Journal of Plant Biology
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• 제33권4호
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• pp.285-292
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• 1990

In order to elucidate the formation of reaction tissues during the transition from primary to secondary growth, the developmental anatomy was conducted in the first internode of Ginkgo biloba seedling in horizontal position. The righting of the horizontal first internode took place at the middle portion and gradually proceeded to the base during the primary growth. Reaction tissues were formed corresponding to the righting movement in the horizontal first internode. During the transition from primary to secondary growth, compression wood was gradually developed on the lower side only. The anatomical features of compression wood also extended longitudinally to the lower side of the vertical portion where it coincided with the lower side of the horizontal first internode occurs acropetally from basal to apical portion. Eventually, some of the anatomical features of compression wood occurred at the primary growth. And the typical compression wood is gradually established during the secondary growth. On the other hand, the lower side tracheid and ray were longer and higher than those of the upper side in the horizontal first internode. However, difference in the width of ray was not observed between the lower and upper sides.

• Bulletin of the Korean Chemical Society
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• 제33권10호
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• pp.3397-3406
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• 2012

Three types of spherulitic morphologies have been investigated in dual substrate mode of Belousov-Zhabotinsky (BZ) type reaction system. Prior to growth of spherulites, three distinct patterning behaviors have been observed sequentially during the reaction process. Initial and the early-phase of reaction showed the emergence of concentric ring-like wave patterns. A colloidal-state of reaction consists of numerous fine solid particles, which forms primarily some nucleation centers of dendritic characters. The nucleation centers were found to grow in sizes and shapes with the progress of reaction. It leads to growth of dendritic-like spherulitic crystal patterns. The resultant spherulites showed transitions in their morphologies, including sea-weeds and rhythmic spherulitic crystal patterns, by the effects substituted organic substrate and in the higher concentration of bromate-initiator respectively. The branching mechanism and crystal ordering of spherulitic textures were studied with help of optical microscope (OPM) and scanning electron microscope (SEM). Characteristics of crystal phases were also evaluated using X-ray diffraction (XRD) and differential thermal analysis (DTA). Results indicated that the compositions of reactants and crystal orderings were interrelated with morphological transitions of spherulites as illustrated and described.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.184-184
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• 2011

Using first-principles density-functional calculations, we investigate the chain reaction mechanism of allyl alcohol (ALA) molecules on the H-terminated Si(001)-2${\times}$1 surface. Recently, it was reported [1] that allyl mercaptan (ALM) molecules show a self-directed line growth across the dimer rows through a chain reaction involving several reaction processes: (i) The created radical at the C atom is transferred to the S atom, (ii) the resulting S-centered radical easily abstracts an H atom from the neighboring dimer row, and (iii) the generated S-H group further reacts with the neighboring dimer row to produce the Si-S bond on the neighboring dimer row, accompanying the associative desorption of H2. This H2-desorption process creates a new DB on the neighboring dimer row, setting off the chain reaction across the dimer rows. In the present study, we find that although the structure of ALA with -OH functional is analogous to that of ALM with -SH functional, ALA and ALM lines show a difference in their growth direction. We predict that ALA undergoes the chain reaction to show a line growth along the dimer row, contrasting with the ALM line growth across the Si dimer rows. Our analysis shows that the different growth direction of ALA is due to the strong instability of oxygen radical intermediate, which prevents from growing across the dimer rows. Thus, we demonstrate that the stability of the radical intermediate plays a crucial role in determining the direction of molecular line growth.

• 한국세라믹학회지
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• 제35권12호
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• pp.1336-1336
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• 1998

2단계 열탄소환원법으로 탄화규소 휘스커를 Ar과 H2분위기에서 기상-고상, 2단계, 기상-액상-고상 성장기구를 통해 각각 합성하였다. Ar분위기에서 탄화규소 휘스커는 다음과 같은 반응기구로 성장하였다. SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) 이때 전체 반응속도는 세번째 반응에 참여하는 탄소에 의해 지배되었다. 따라서 이 반응이 휘스커 합성의 율속반응으로 판단되었다. 한편 H2 분위기에서 탄화규소 휘스커는 다음과 같은 반응기구로 성장하였다.SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) 이때 전체 반응속도는 SiO(v) 기체의발생 속도에 의해 지배되었다. 따라서 첫번째 반응이 휘스커 합성의 율속 반응인 것으로 판단되었다.