• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.401-411
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• 1990

Deposition of diamond films on Si(100) from the mixtures of methane and hydrogen were investigated using hot W filament CVD method. The nucleation density could be increased thousandfold by surface treatment with SiC powder. Upon oxygen addition to the mixture, crystal facets became developed more clearly by selectively removing non-diamond carbons, but the film growth rate generally decreased. However, at a very high methane content(e.g. 10%), a small amount of oxygen addition has resulted in an increase in the film deposition rate presumably by promotion of methane decomposition. When the gas pressure was varied, the growth rate exhibited a maxiumum at around 20torr and the film crystallinity steadily improved with the pressure increase. The observed variation of the growth rate by oxygen addition was discussed in terms of its role in the pyrolysis and the subsequent gas phase reactions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.4
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• pp.174-186
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• 2004

Striations are growth-induced inhomogeneities which hamper the applications of solid-solution crystals and of doped crystals in numerous technologies. Thus the optimized performance of solid solutions often can not be exploited. The inhomogeneity problem can be solved in specific cases by achieving a distribution coefficient one in growth from melts and from solutions. Macrostep-induced striations can be suppressed by controlling the growth mode, by achieving growth on facets thereby preventing step bunching. Thermal striations are commonly assumed to be caused by convective instabilities so that reduced convection by microgravity or by damping magnetic fields was and is widely attempted to reduce such inhomogeneities. Here it will be shown that temperature fluctuations at the growth interface cause striations, and that hydrodynamic fluctuations in a quasi-isothermal growth system do not cause striations. The theoretically derived conditions were experimentally established and allowed the growth of striation-free crystals of $KTa_{1-x}Nb_xO_3$"KTN" solid solutions. Hydrodynamic variations from the accelerated crucible rotation technique ACRT did not cause striations as long as the temperature was controlled within $0.03^{\circ}$ at $1200^{\circ}C$ growth temperature. Alternative approaches to solve or reduce the segregation and striation problems in growth from melts and from solutions are discussed as well.

• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.21-26
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• 1986

By the floating zone method with infrared radiation convergence type heater homogeneously $Cr^{3+}$ doped alu-mina single crystal was obtained. And sizx {1010} facets appeared at the surface of [0001] grown crystals. $ZrO_2$ and $HfO_2$ precipitated as secondary phase and were not doped in the crystals. We found that the dist-ribution of the secondary phase which was mainly located at the surface and the peripheral region was closely related to the flow pattern of melt zone.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• Asian-Australasian Journal of Animal Sciences
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• v.11 no.6
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• pp.774-780
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• 1998

This report includes an extensive bibliography of research articles investigating various facets of rearing neonatal piglets using liquid diets, and includes historical publications dating back to the 1940's. However, in order to provide concise and timely focus for application in modem swine production, only a selected number of recent findings are reviewed in detail. Collectively, the data presented illustrate that growth of piglets fed liquid diets can greatly exceed that of littermates fed dry diets and can even exceed growth rates of sow-reared controls (by up to 160%). The central questions that remain unanswered are: 1) Can this improved performance be obtained routinely and economically under applied farm conditions? and if so, 2) Does improved growth during the early-weaning period translate into improved net economic returns overall? Unfortunately, due to the current practical management constraints related to liquid-diet feeding (i.e., lack of an easy-to-manage feed delivery system), limited data are available which examine the efficacy of liquid-diet feeding under practical, commercial farm conditions.

• Journal of the Korean Society for Heat Treatment
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• v.3 no.2
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• pp.37-44
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• 1990

The effect of the microstructural change on the near threshold fatigue crack growth rate in SM40C steel has been studied using the ${\Delta}K$ decreasing method. Below the total strain amplitude of 0.56%, cyclic softening occured, whereas above this value cyclic hardening occurred in the pearlitic lamellar structure. However, in the spherodized structure the cyclic hardening solely occurred. The crack growth rate in the near-threshold region was decreased with increasing prior austenite grain size and this was due to surface roughness. The crack growth rate of the spherodized structure was lower than that of the pearlite lamellar structure and the ${\Delta}K_{th}$ of the former was higher than that of the latter. It was understood that the crack propagates preferentially through the ferrite phase. The intergranular facets in the near-threshold region appeared in the spherodized structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.280-280
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• 2014

We report the fabrication and electroluminescent characteristics of GaN/InxGa1-xN microdonut-shaped light-emitting diode (LED) microarrays as variable-color emitters. The diameter, width, height, and period of the GaN microdonuts were controlled by their growth parameters and the geometrical factors of the growth mask patterns. For the fabrication of microdonut LEDs, p-GaN/p-AlxGa1-xN/u-GaN/u-InxGa1-xN heteroepitaxial layers were coated on the entire surface of n-GaN microdonuts. The microdonut LED arrays showed strong light emission, which could be seen with the unaided eye under normal room illumination. Additionally, magnified optical images of microdonut LED arrays exhibited microdonut-shaped light emissions having spatially resolved blue and green colors. Their electroluminescence spectra had two dominant peaks at 460 and 560 nm. With increasing applied voltage, the intensity of the blue emission peak increased much faster than that of the green emission peak, indicating that the color of the LEDs is tunable. We also demonstrated that EL spectra of the devices could be controlled by changing the size of microdonut LEDs. What we want to emphasize here with the microdonut LEDs is that they have additional inner sidewall facets which did not exist for other typical three-dimensional structures including nanopyramids and nanorods, and that InxGa1-xN single quantum well formed on the inner sidewall facets had unique thickness and chemical composition, which generated additional EL color. The origin of the electroluminescence peaks was investigated by structural characterizations and chemical analyses.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.114-118
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• 2011

We report on the growth and characterization of nano and micro scale GaN structures selectively grown on the vertex of hexagonal GaN pyramids. $SiO_2$ near the vertex of hexagonal GaN pyramids was removed by optimized photolithgraphy process and followed by a selective growth of nano and micro scale GaN structures by metal organic vapor phase epitaxy (MOVPE). The pyramidal GaN nano and micro structures which have crystal facets of semi-polar {1-101} facets were formed only on the vertex of GaN pyramids and the size of the selectively grown nano and micro GaN structures was easily controlled by growth time. As a result of TEM measurement, Reduction of threading dislocation density was conformed by transmission electron microscopy (TEM) in the selectively grown nano and micro GaN structures. However, stacking faults were newly developed near the edge of $SiO_2$ film because of the roughness and nonuniformity in thickness of the $SiO_2$ film.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.173-173
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• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.279-282
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• 2013

Recently, it has been interested much that AlN (Aluminum Nitride) crystals can be applied to UV LEDs and high power devices as like GaN and SiC crystals. The reports about commercial grade of AlN wafers in the world have been absent, however several results for growth of large size of AlN single crystals have been reported from abroad. In this report, the result of AlN single crystals of a diameter of about 8 mm grown are reported. Optical microscopic characterization was applied to observe the form of the crystals and the crystal quality was evaluated by FWHM measurement by DCXRD rocking curve analysis.