• 한국세라믹학회지
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• 제27권3호
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• pp.401-411
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• 1990

Deposition of diamond films on Si(100) from the mixtures of methane and hydrogen were investigated using hot W filament CVD method. The nucleation density could be increased thousandfold by surface treatment with SiC powder. Upon oxygen addition to the mixture, crystal facets became developed more clearly by selectively removing non-diamond carbons, but the film growth rate generally decreased. However, at a very high methane content(e.g. 10%), a small amount of oxygen addition has resulted in an increase in the film deposition rate presumably by promotion of methane decomposition. When the gas pressure was varied, the growth rate exhibited a maxiumum at around 20torr and the film crystallinity steadily improved with the pressure increase. The observed variation of the growth rate by oxygen addition was discussed in terms of its role in the pyrolysis and the subsequent gas phase reactions.

• 한국결정성장학회지
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• 제14권4호
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• pp.174-186
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• 2004

Striations are growth-induced inhomogeneities which hamper the applications of solid-solution crystals and of doped crystals in numerous technologies. Thus the optimized performance of solid solutions often can not be exploited. The inhomogeneity problem can be solved in specific cases by achieving a distribution coefficient one in growth from melts and from solutions. Macrostep-induced striations can be suppressed by controlling the growth mode, by achieving growth on facets thereby preventing step bunching. Thermal striations are commonly assumed to be caused by convective instabilities so that reduced convection by microgravity or by damping magnetic fields was and is widely attempted to reduce such inhomogeneities. Here it will be shown that temperature fluctuations at the growth interface cause striations, and that hydrodynamic fluctuations in a quasi-isothermal growth system do not cause striations. The theoretically derived conditions were experimentally established and allowed the growth of striation-free crystals of $KTa_{1-x}Nb_xO_3$"KTN" solid solutions. Hydrodynamic variations from the accelerated crucible rotation technique ACRT did not cause striations as long as the temperature was controlled within $0.03^{\circ}$ at $1200^{\circ}C$ growth temperature. Alternative approaches to solve or reduce the segregation and striation problems in growth from melts and from solutions are discussed as well.

• 한국세라믹학회지
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• 제23권1호
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• pp.21-26
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• 1986

By the floating zone method with infrared radiation convergence type heater homogeneously $Cr^{3+}$ doped alu-mina single crystal was obtained. And sizx {1010} facets appeared at the surface of [0001] grown crystals. $ZrO_2$ and $HfO_2$ precipitated as secondary phase and were not doped in the crystals. We found that the dist-ribution of the secondary phase which was mainly located at the surface and the peripheral region was closely related to the flow pattern of melt zone.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• Asian-Australasian Journal of Animal Sciences
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• 제11권6호
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• pp.774-780
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• 1998

This report includes an extensive bibliography of research articles investigating various facets of rearing neonatal piglets using liquid diets, and includes historical publications dating back to the 1940's. However, in order to provide concise and timely focus for application in modem swine production, only a selected number of recent findings are reviewed in detail. Collectively, the data presented illustrate that growth of piglets fed liquid diets can greatly exceed that of littermates fed dry diets and can even exceed growth rates of sow-reared controls (by up to 160%). The central questions that remain unanswered are: 1) Can this improved performance be obtained routinely and economically under applied farm conditions? and if so, 2) Does improved growth during the early-weaning period translate into improved net economic returns overall? Unfortunately, due to the current practical management constraints related to liquid-diet feeding (i.e., lack of an easy-to-manage feed delivery system), limited data are available which examine the efficacy of liquid-diet feeding under practical, commercial farm conditions.

• 열처리공학회지
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• 제3권2호
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• pp.37-44
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• 1990

The effect of the microstructural change on the near threshold fatigue crack growth rate in SM40C steel has been studied using the ${\Delta}K$ decreasing method. Below the total strain amplitude of 0.56%, cyclic softening occured, whereas above this value cyclic hardening occurred in the pearlitic lamellar structure. However, in the spherodized structure the cyclic hardening solely occurred. The crack growth rate in the near-threshold region was decreased with increasing prior austenite grain size and this was due to surface roughness. The crack growth rate of the spherodized structure was lower than that of the pearlite lamellar structure and the ${\Delta}K_{th}$ of the former was higher than that of the latter. It was understood that the crack propagates preferentially through the ferrite phase. The intergranular facets in the near-threshold region appeared in the spherodized structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.280-280
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• 2014

We report the fabrication and electroluminescent characteristics of GaN/InxGa1-xN microdonut-shaped light-emitting diode (LED) microarrays as variable-color emitters. The diameter, width, height, and period of the GaN microdonuts were controlled by their growth parameters and the geometrical factors of the growth mask patterns. For the fabrication of microdonut LEDs, p-GaN/p-AlxGa1-xN/u-GaN/u-InxGa1-xN heteroepitaxial layers were coated on the entire surface of n-GaN microdonuts. The microdonut LED arrays showed strong light emission, which could be seen with the unaided eye under normal room illumination. Additionally, magnified optical images of microdonut LED arrays exhibited microdonut-shaped light emissions having spatially resolved blue and green colors. Their electroluminescence spectra had two dominant peaks at 460 and 560 nm. With increasing applied voltage, the intensity of the blue emission peak increased much faster than that of the green emission peak, indicating that the color of the LEDs is tunable. We also demonstrated that EL spectra of the devices could be controlled by changing the size of microdonut LEDs. What we want to emphasize here with the microdonut LEDs is that they have additional inner sidewall facets which did not exist for other typical three-dimensional structures including nanopyramids and nanorods, and that InxGa1-xN single quantum well formed on the inner sidewall facets had unique thickness and chemical composition, which generated additional EL color. The origin of the electroluminescence peaks was investigated by structural characterizations and chemical analyses.

• 한국결정성장학회지
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• 제21권3호
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• pp.114-118
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• 2011

본 논문에서는 육각형 GaN 피라미드의 꼭지점 부분에만 나노 혹은 마이크로 크기의 GaN 구조를 선택적으로 성장시킬 수 있는 결정 성장 방볍에 대하여 연구하였다. 최적화된 포토리소그라피 공정을 이용하여 육각형 GaN 피라미드 구조의 꼭지점 부분의 $SiO_2$ 마스크 영역만을 제거할 수 있었으며, 이렇게 하여 노출된 육각형 GaN 피라미드의 꼭지점 부분에만 metal organic vapor phase epitaxy(MOVPE) 결정 성장방법을 사용하여 나노 및 마이크로 크기의 GaN 구조를 선택적으로 성장하였다. GaN 피라미드 꼭지점 부근에 형성된 나노 및 마이크로 G값J 구조는 semi-polar {1-101} 결정면으로 둘러싸인 육각 피라미드 형상을 하고 있으며 그들의 크기는 성장 시간에 의해 쉽게 조절할 수 있음을 확인하였다. TEM 관측 결과, 측면 방향으로 진행하는 관통전위들이 $SiO_2$ 마스크에 의해 효율적으로 차단되어 나노 및 마이크로 GaN 구조에서는 전위 밀도가 감소하는 것을 확인할 수 있었으나 $SiO_2$ 마스크의 끝부분의 매끄럽지 못한 부분에 의해 적층 결함이 발생함을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.173-173
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• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.

• 한국결정성장학회지
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• 제23권6호
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• pp.279-282
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• 2013

최근 관심이 높아지고 있는 GaN, SiC 단결정과 함께 자외선 LED 및 전력 반도체 용 기판 소재로서 응용성이 높은 질화갈륨(AlN, Aluminum Nitride) 단결정을 성장하였다. 아직 상용화된 AlN 기판은 없지만, 단결정 성장에 대한 연구가 이루어지고 있다. 본 연구에서는 국내 최초로 AlN 단결정의 성장 결과 직경 약 8 mm의 결정을 성장하였다. 성장된 단결정은 광학현미경으로 관찰하였으며, DCXRD를 통하여 결정성을 평가한 결과를 보고하고자 한다.