• 한국결정성장학회지
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• 제22권6호
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• pp.265-268
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• 2012

대형의 고품질 AlN 단결정은 자외선 LED 및 전력 반도체 소자용으로 중요성이 크다. 그러나, 아직 1인치급의 고품질 단결정에 대해서는 보고된 바가 없다. AlN 성장을 위한 PVT 공정에서는 성장 속도 증가를 위하여 성장 결정의 형상을 고찰하는 것이 매우 중요하다. 본 연구에서는 PVT 공정으로 성장된 AlN 결정의 성장 형태에 대하여 고찰하였다. 광학현미경을 이용하여 결정의 형태와 성장 facet에 대하여 관찰하고, 결정의 성장 습성과 관련하여 고찰하였다.

• Journal of Ceramic Processing Research
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• 제13권spc1호
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• pp.93-95
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• 2012

We report on the growth and characterization of the nano- and micro scale GaN structures selectively grown on the vertex of GaN stripes using the metal organic vapor phase epitaxy method and conventional photolithography technique. The triangular shaped nano- and micro GaN structures which have semi-polar {11-22} facets were formed only on the vertex of the lower GaN stripes. Crystalline defects reduction was observed by transmission electron microscopy for upper GaN stripes. We also have grown the InGaN/GaN multi-quantum well structures on the semi-polar facets of the upper GaN stripes. Cathodoluminescence images were taken at 366, 412 and 555 nm related to GaN band edge, InGaN/GaN layer and defects, respectively.

• 한국진공학회지
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• 제5권3호
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• pp.199-205
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• 1996

InGaAs 박막의 facet 성장을 연구하기 위하여 triethygallium(TEGa), trimethylindium (TMIn)과 사전 열분해하지 않은 monoethylarsine (MEAs)을 사용하여 chemical beam epitaxy (CBE) 법으로 InGaAs 박막을 선택적으로 성장시켰다. 성장 온도와 패턴의 방향에 따라 facet 형성이 매우 다르게 나타났다. 마스크를 [11] 방향으로 제작한 기판에서는 facet의 면이 (311), (377)과 (11)의 여러 면이 형성되었으나 성장 온도가 올라감에 따라 (311)한 면으로 발전하였다. 또한 마스크를 [011]방향으로 하였을 때는, 성장 온도가 증가함에 따라 facet은 (11)h가 (111)면에서 (111)면으로 변하였다. 이러한 결과들은 측면에서 원료가스의 표면 이동 거리가 성장 온도에 따라서 변화하는 차이에 기인하는 것으로 믿어진다. U자 형태를 가지는 (100)의 윗면은 간단한 dangling bond 모형으로 설명할수 있었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.167-185
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• 1999

In the present paper, KLN crystals have been grown along <001>, <100> and <110> directions by the top seeded solution growth (TSSG) method from Li-richer melts with different compositions. The morphologies of KLN crystals grown along different directions have been studied, and the well-developed facets have been unambiguously indexed using X-ray goniometer and stereographic projection analysis. The growth mechanism and defects such as cracks and inclusions were discussed on the basis of observations of facets on the crystal-melt interfaces. The crystal compositions were determined by chemical analysis method. The structure and lattice constants of KLN crystals were determined and calculated on the basis of XRD data by using TREOR90 and PIRUM programs. The Curie temperature and optical absorption were determined by dielectric constant peak and spectrum measurements, respectively. The blue SHG characteristics of a KLN sample were also investigated using a pulsed dye laser. PACS: 42.70.M;81.10;81.10A;42.65.K.

• 한국결정성장학회지
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• 제9권4호
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• pp.396-401
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• 1999

In the present paper, potassium lithium niobate(KLN) crystals have been grown along <001>, <100> and <110> directions by the top seeded solution growth (TSSG) method from Li-richer melts with different compositions. The morphologies of KLN crystals grown along different directions have been studied, and the well-developed facets have been unambiguously indexed using X-ray goniometer and stereographic projection analysis. The growth mechanism and defects such as cracks and inclusions were discussed on the basis of observations of facets on the crystal-solution interfaces. The crystal compositions were determined by a chemical analysis method. The structure and lattice constants of KLN crystals were determined and calculated on the basis of XRD data by using TREOR90 and PIRUM programs. The Curie temperature and optical absorption were determined by dielectric constant peak and spectrum measurements. respectively. The blue second harmonic generation (SHG) characteristics of KLN sample were also investigated using a pulsed dye laser.

• 한국결정학회지
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• 제2권1호
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• pp.1-11
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• 1991

GaAs 단결정을 LEC법으로 성장시킬 때 종단쌍정이 자주 발생하여 문제가 된다. 종단쌍정이 발생 하면 (100) 방향의 성장축이 (221)로 바뀐다. 본 실 험에서는 (100) 방향의 성장축으로 직경 3 inch의 CaAs 단결정을 LEC법에 의해 성장시키고, SPW photo-etching법에 의해 GaAs 단결정성장에서 생성 된 striation과 edge facet를 관찰하여 상호관계를 연 구하였다. 이들의 불안정한 생성이 종단방정 발생의 원 인 이었다. Striation의 형태는 결정직경, 융액량등의 성장조건에 따라 변화하였다. 결정주변부에서는 미시적인 striation 형태의 변화가 있었는데, 이는 용액대류의 불안정에 기인한 것이었다. {lll} 면으로 구성된 edge facet은 결정주변부에서 striation의 형태가 볼록 해질 때 잘 생성되었다. 이것은 striation과 {lll} edgp facet이 이루는 각도가 작아지기 때문이었다. 종단방정은 결정축에 수직한 (110) 방향의 결정 표면에서 발생하였다. 이들은 불안정한 융액대류에 의해 생성되어 결정이 성장함에 따라 결정속으로 전파되었다. 종단방정은 {lll} edge facet의 재용융 후 재성장의 성장속도가 매우 빠를 때 발생하였다. 따라서 이러한 종단쌍정의 발생을 억제하기 위해서 는 고액계면에서의 급격한 융액대류의 변화가 생기 지 않도록 하여야 한다.

• 한국결정학회지
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• 제11권4호
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• pp.207-211
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• 2000

In a Czochralski silicon single crystal, the relation between the growth twin and the crystal morphology was investigated. The growth twin is nucleated on the {111} facet planes near the growth ridges. When a {111} growth twin is formed in the <100> silicon crystal, the growth ridge where twin is nucleated will continuous through the twin plane. Other two ridges at the 90。 apart will be displaced about 33° and be deformed to facets. The ridge on the opposite side of twin nucleation will disappear by forming a slight hill. Because the growth ridges of silicon is due to the {111} planes, the variation in the growth ridge formation can be predicted clearly by considering the change of the {111} plane traces in the stereographic projection after twining.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.165-167
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• 1998

Nd:YAG crystals were grown by Horizontal Bridgman method. The effects of sliding rate (growth rate) of Molydbenum container, growth atmosphere and concentration of Neodymium ions on crystal qualities were investigated. The size of the crystals grown was up to 150-200 mm in length, 70 mm in width and 25-35 mm in thickness. Crystals grown under the optimum conditions were violet, transparent and could not be observed any macroscopic defects. Under the polarizing microscopoc observations with crossed polar, striations, {211} facets and inclusions were detected. With the grown crystals, prototypes of laser rods for 1.06$\mu$m laser application were manufactured and then characterized. As a result, we can get high quality of Nd:YAG laser rods with <111> and <110> axis, 63 mm in length and6.3 mm in diameter.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.332-333
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• 2006

The driving forces and the probable processes of WC-Co grain growth are reanalysed from recent data of interface energy and microstructure. Grain growth is driven by the disappearing of the high energy WC/WC and WC/Co interfaces with habit planes different from {0001}, ${10\bar{1}0}$ and ${11\bar{2}0}$ facets and by the area decrease of the WC/WC and WC/Co interfaces with {0001} and ${10\bar{1}0}$ habit planes. Grain growth mainly results of dissolution-precipitation. Abnormal grains are likely formed by defects assisted nucleation.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.161-164
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• 1998

Erbium doped garnet crystals were grown by Czochralski method. Relationshipes between crystal quality and crystal growth factors such as pulling rate, rotation rate and concentration of active ions and sensitizers were investigated. Optimum pulling and rotation rate for high quality Er:YAG crystal were 1 mm/hr and 20 rpm and for Er,Cr:YSGG crystal 2-4 mm/hr and 10 rpm respectively. The size of the crystals grown was up to 20-30 mm in diameters and 95-135 mm in length. Er:YAG crystal grown under the nitrogen atmosphere was pink and transparent and Er,Cr:YSGG under the 98% {{{{ { N}_{ 2} }}}} and 2% {{{{ { O}_{2 } }}}} was dark green and transparent. Under the polarizing microscopic observations with crossed polar, striations and {211} core facets were detected. Spectroscopic properties for Er,Cr:YSGG laser rods with <111> axis, 80 mm in length and 6.3 mm in diameter for medical laser applications of 2.79 ${\mu}$m wavelength were manufactured and then laser oscillation was achieved.