• 한국표면공학회지
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• 제31권6호
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• pp.345-358
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• 1998

The evolution of surface roughness and morphology in epitaxial Si and $Si_{0.7}Ge{0.3}$ alloys grown by UHV opm-beam sputter deposition onto nominally-singular, [100]-, and [110]-mi-scut Si(001) was investigated by stomic force microscopy and trasmission electron microscopy. The evolution of surface roughness of epitaxial Si films grown at $300^{\circ}C$ is inconsistent with conventional scaling and hyperscaling laws for kineti roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contraty to previous high-temperature growth results, the presence of steps during deposition at $300^{\circ}C$ increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughnesses on vicival substrates. Strain-induced surface roughening was found to dominate in $Si_{0.7}Ge{0.3}$ alloys grown on singular Si(001) substrates at $T_S\ge450^{\circ}C$ where the coherent islands are prererentially bounded along <100> directions and eshibt {105} facetting. Increasing the film thickness above critical values for strain relaxation leads to island coalescence and surface smoothening. At very low growth temperatures ($T_s\le 250^{\circ}C$), film surfaces roughen kinetically, due to limited adatom diffusiviry, but at far lower rates than in the higher-temperature strain-induced regime. There is an intermediate growth temperature range, however, over which alloy film surfaces remain extremely smooth even at thicknesses near critical values for strain relaxation.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.154-155
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• 2006

This study investigated a mechanism for controlling the shape of Cu nanocrystals fabricated using the polyol process, which considers the thermodynamic transition from a facetted surface to a rough surface and the growth mechanisms of nanocrystals with facetted or rough surfaces. The facetted surfaces were stable at relatively low temperatures due to the low entropy of perfectly facetted surfaces. Nanocrystals fabricated using a coordinative surfactant stabilized the facetted surface at a higher temperature than those fabricated using a non-coordinative surfactant. The growth rate of the surface under a given driving force was dependent on the surface structure, i.e., facetted or rough, and the growth of a facetted surface was a thermally activated process. Surface twins decreased the activation energy for growth of the facetted surface and resulted in rod- or wire-shaped nanocrystals

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.210.1-210.1
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• 2014

The hexagonal boron nitride (h-BN) sheet, a 2D material like graphene sheet, is comprised of boron and nitrogen atoms. Similar to graphene, h-BN sheet has attractive mechanical properties while it has a wide band gap unlike graphene. Recently, many experimental groups studied the growth of single BN layer by chemical vapor deposition (CVD) method on the copper substrate. To study the initial stage of h-BN growth on the copper surface, we have performed density functional theory calculations. We investigate several adsorption sites of a boron or nitride atom on the Cu surfaces. Then, by increasing the number of adsorbed B and N atoms, we study formation behaviors of the BN flakes on the surface. Several types of BN flakes atoms such as triangular, linear, and hexagonal shapes are considered on the copper surface. We find that the formation of the BN flake in triangular shape is most favorable on the surface. On the basis of the theoretical results, we discuss the growth mechanism of h-BN layer on the copper surfaces in terms of its shapes in the initial stage of growth.

• 한국세라믹학회지
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• 제50권6호
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• pp.439-445
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• 2013

Both an unreinforced $Al_2O_3$/Al matrix and a ${\alpha}-Al_2O_3$ particulate reinforced composite have been produced by the oxidation of an Al surface doped with NaOH in the absence of any other dopant. Fabrication of the matrix was initiated by the formation of $NaAlO_2$, which provides a favorable surface structure for the matrix formation by breaking the protective $Al_2O_3$ layer on Al. During the matrix growth, the external surface of the growth front was covered with a very thin sodium-rich oxide. A cyclic formation process of the sodium-rich oxide on the growth surface was proposed for the sodium-induced directed metal oxidation process. This process involves dissolution of the sodium-rich oxide, motion of Na to the growth front, and re-formation of the oxide on the surface. Near-net-shape composites were fabricated by infiltrating an $Al_2O_3$/Al matrix into a ${\alpha}-Al_2O_3$ particulate preform, without growth barrier materials. The infiltration distance increased almost linearly in the NaOH-doped preform.

• 열처리공학회지
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• 제31권5호
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• 한국표면공학회지
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• 제23권4호
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• pp.197-207
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• 1990

Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

• 한국해양공학회지
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• 제1권1호
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• pp.104-110
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• 1987

Fatigue tests by axial loading (R = 0.05) were carried out to investigate fatigue crack growth characteristics of small surface cracks in 2 1/4 Cr-1 Mo steel at room temperature by using flat specimens with a small artificial pit. All the data of the fatigue crack growth rate obtained in the present test are determined as a function of the stress intensity factor range about a semi-elliptical crack, so that the application of linear fracture mechanics to the surface fatigue crack growth and to the fatigue crack growth into depth, and all the data obtained from tests were discussed in comparison with the data of Type 304 stainless steel and two type of mild steel under the same test conditions. The obtained results are as follows: 1)When the cycle ratios are same, surface fatigue crack length and its depth are almost same and fall within a narrow scatter band in spite of different stress levels. 2)Relations of the surface fatigue crack growth rate (da/dN) and fatigue crack growth rate into depth (db/dN) to its stress intensity factor range ($\Delta K_{Ia}, \Delta K_{Ib}$) can be plotted as a straight line at log-log diagram without dependence of stress level and coincide with the data of part-through crack in various steels.

• Journal of Mechanical Science and Technology
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• 제20권11호
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• pp.1980-1992
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• 2006

Nucleate pool boiling experiments were performed using pure R11 for various surface angles under constant heat flux conditions during saturated pool boiling. A 1-mm-diameter circular heater with an artificial cavity in the center that was fabricated using a MEMS technique and a high-speed controller were used to maintain the constant heat flux. Bubble growth images were taken at 5000 frames per second using a high-speed CCD camera. The bubble geometry was obtained from the captured bubble images. The effects of the surface angle on the bubble growth behavior were analyzed for the initial and thermal growth regions using dimensional scales. The parameters that affected the bubble growth behavior were the bubble radius, bubble growth rate, sliding velocity, bubble shape, and advancing and receding contact angles. These phenomena require further analysis for various surface angles and the obtained constant heat flux data provide a good foundation for such future work.

• 한국표면공학회지
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• 제54권4호
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• pp.200-208
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• 2021

This paper investigated generation behavior of micro-arcs and growth behavior of PEO films on the AA7050 disc specimen in 0.1 M NaAlO₂ solution under the application of 1200 Hz anodic pulse current. Morphologies, thickness and surface roughness of PEO films were examined at the edge part and central part separately. Micro-arcs were generated first at the edge part and then moved towards the central part with PEO treatment time, indicating lateral growth of PEO films. The lateral growth resulted in uniform PEO thickness of about 5 ㎛ and surface roughness of about 0.5 ㎛. Moving of the arcs from the edge towards the central part appeared only one time and large size arcs were generated at the edge before completing the central part with small size micro-arcs. This suggests that vertical growth starts before completing the lateral growth. Large size arcs generated at the edge resulted in the formation of relatively large size pores within the PEO films on the AA7050 disc specimen.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.521-527
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• 1997

Irregular shapes and growth behavior of surface micro-crack showed very complex and nonlinear propeties and many investigators have performed theoretical analysesand experiments on them to characterize fatigue strength. They had difficulties in estimating fatigue life due to random distribution, growth and coalescence of surface micro-cracks. The straightness of crack growth along intergranular and transgranular was prevented from irregular microstructure and precipitates. Euclid geometry can't quantify shape of surface micro-crack but ftractal geometry can. Therefore, it is suggested that average fractal dimension of surface micro-cracks is able to estimate fatigue life but fractal dimension of maximum surface micro-crack is not in Al 2024-T3 alloy.