• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.231-236
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• 2005

To investigate the electrical properties at the single grainboundary of ZnO varistors, micro-electrodes were fabricated on the surface which was polished and thermally etched. Our micro-electrode had 2000 $\AA$ silicon nitride layer between micro-electrode and ZnO surface. This layer was deposited by PECVD and etched by RIE after photoresistor pattering process using by mask 1. The metal patterning of micro-electrodes used lift-off method. We found that the breakdown voltage of single grainboundary is about 3.5∼4.2 V at 0.1 mA on I-V curves. Also, capacitance-voltage measurement at single grainboundary gave several parameters( $N_{d}$, $N_{t}$, $\Phi$$_{b}$, t) which were related with grainboundary.ary.

• 태양에너지
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• 제5권2호
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• pp.54-59
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• 1985

Due to the grainboundary recombination and the poor diffusion length, the polycrystalline cell efficiency is lower than the singlecrystalline cell. In order to define the effect of grains and grain-boundaries, 2 - dimensional differential diffusion equations of minority carrier are modelled. To solve them, two theoretical formulas are derived, which can be evaluated the grainboundary recombination velocity and the grain diffusion length. Also computer-aided numerical analysis is given.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.40-47
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• 1995

Electrical properties of ZnO ceramics based on Bi oxide was investigated in relation to sintering temperature. In the temperature range >$1150^{\circ}C$ to >$1350^{\circ}C$ the grain size increased from 9.mu.m to 20.mu.m when the sintering temperature was raised. The leakage current in the low voltage range increased as the potential barrier decreases, which is caused by increasing the grain size at high temperature. The dielectric characteristics of the ZnO ceramics was also affected by sintering temperature. Large dielectric constant was attributed, to the grainboundary layer of polycrystalline ZnO ceramics and decreasing grainboundary width. The variation of breakdown voltage with sintering temperature was attributed to the change of the donor concentration in the ZnO grain and grain size. The results showed that breakdown voltage increased decreasing grain size and donor concentration. Nonohmic coefficient was associated with the lower breakdown voltage per grainboundary layer due to the grain growth and higher donor concentration.

• 연구논문집
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• 통권30호
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• pp.121-128
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• 2000

The failed tube received for this study has been used for approximately 10 year at $330^{\circ}C$ in a steam production boiler tube was fractured in the transversed direction to tube length, and fracture mode was typically intergranulas type without the plastic deformation. The fracture surface was covered by the oxide scale formed from the intermal high pressure steam at high temperature. The microstructure was not nearly thermal-degraded during the service. From this result, we can conclude that the oxide film was proferentialy formed into the grainboundary and this grainboundary oxide film was brittle-fractured by the thermal stress in the longitudinal direction to the tube brittle intergranular fracture mode.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1999년도 춘계학술발표회요약집
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• pp.291-291
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• 1999

• 한국화재소방학회논문지
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• 제10권4호
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• pp.3-12
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• 1996

본 연구에서는 화재 감지 회로 등에 사용되는 ZnO 바리스터의 제조과정중 냉각 속도가 전기적 특성에 미치는 영향에 대하여 조사한 것이다. 냉각 속도의 변화에 따른 시편의 미세구조, 전압-전류 특성, 복합임피던스 측정을 하였다. 냉각 속도 $200^{\circ}$/h에서 비오옴계수나 바리스터 동작 전압의 최대치를 나타내었다. 이것은 냉각과정 중 형성된 결정입계에 성질에 의존됨을 알았다. 복합임피던스는 100Hz-13MHz의 주파수 범위에서 측정하였으며, 반원의 특성을 검토한 결과 결정립이나 결정입계의 저항이 냉각 속도에 크게 의존되고 있음을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.25-28
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• 2001

The objectives of this paper are to demonstrate the electrical degradation phenomena with Si atom's behaviors in the grainboundary of semiconducting ZnO ceramics. The ZnO ceramic devices used in this investigation were fabricated by standard ceramic techniques. Especially, $SiO_2$ were added to analyze the degradation characteristics with Si and sintered in oxygen ambient at $1300^{\circ}C$. The conditions of DC degradation test were $115{\pm}2^{\circ}C$ for 13h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand $R_g$ and $R_b$ at the equivalent circuit. Electrical stability improved as the amount of $SiO_2$ addition increased. This results were explain by the quantitative analysis and the line scanning method of EPMA.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1999년도 제29회 춘계학술대회
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• pp.119-126
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• 1999

The rolling fatigue lives (RFL) of five kinds of silicon nitride balls were investigated. Four kinds of Si$_3$N$_4$ balls were fabricated using different raw materials, sintering aids and sintering conditions, Commercially available Si3N4 ball was also studied for comparison. All the balls were finished up to the dimensional accuracy of Grade 10 defined in KS B 2001 (Steel Balls for Ball Bearings) with a size of 9.525mm. RFL tests were then conducted under the initial theoretical maximum contact stress 6.38 GPa and the spindle speed 10,000 rpm. Gear oil was provided by oiled race as lubricant. The results of RFL test indicated the prerequisitic conditions for the long rolling life of Si$_3$N$_4$ball : (1) the high density, (2) mjcrostructures consisted of small uniformly distributed grains, (3) little glassy phase in grainboundary, and (4) little crystalline phase and secondary phase that induces residual thermal stress due to the differences of thermal expansion coefficient with Si$_3$N$_4$Phase.

• 대한전자공학회논문지
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• 제24권6호
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• pp.986-991
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• 1987

To establish the basic composition of low voltage varistor and to find the role of each compont in detail, we investigated the electrical properties and the microstructures. As a result, ZnO 1.0m/oBi2O3-1.0m/oCo2kO3-0.2m/oMnO2 system was optimum for low voltage varisor. We found that Bi2o3 promotes grain growth of ZnO and that Co2O3 doped in ZnO grain lowers the nonlinear resistance and MnO2 mainly existed near the ZnO grainboundary elevates nonlinear resistance.

• Tribology and Lubricants
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• 제15권2호
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• pp.150-155
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• 1999

The rolling fatigue lives (RFL) of five kinds of silicon nitride balls were investigated. Four kinds of Si$_3$N$_4$balls were fabricated using different raw materials, sintering aids and sintering conditions. Commercially available Si$_3$N$_4$ball was also studied for comparison. All the balls were finished up to the dimensional accuracy of Grade 10 defined in KS B 2001 (Steel Balls fer Ball Bearings) with a size of 9.525 mm. RFL tests were then conducted under the initial theoretical maximum contact stress 6.38 GPa and the spindle speed 10,000 rpm. Gear oil was provided by oiled race as lubricant. The results of RFL test indicated the prerequisitic conditions for the long rolling life of Si$_3$N$_4$ball : (1) the high density, (2) microstructures consisted of small uniformly distributed grains, (3) little glassy phase in grainboundary, and (4) little crystalline phase and secondary phase that induces residual thermal stress due to the differences of thermal expansion coefficient with Si$_3$N$_4$phase.