• Title/Summary/Keyword: Grain-oriented

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Effect of the Tertiary Recrystallization on the Magnetic Properties of High Silicon Iron (고규소철 강판의 자기적 특성에 미치는 3차 재결정의 영향)

  • Koo, J.M.
    • Journal of the Korean Society for Heat Treatment
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    • v.10 no.4
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    • pp.246-254
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    • 1997
  • The 6.5wt %Si-Fe alloy sheets were made by the twin roll process. The magnetic properties and microstructures of sheets annealed in the sulfur atmosphere were studied. In the as-prepared sheet, non-oriented columnar grains about $10{\mu}m$ in diameter were observed, which grew from the surface to the inner part of the sheet. When the annealing temperature was around $700^{\circ}C$, the primary recrystallization was formed around the middle part of the sheet thickness, and the grain size increased with increasing annealing temperature. At the annealing temperature of $900^{\circ}C$, the grain size became $30{\sim}40{\mu}m$. Around the annealing temperature, the motive force of the grain growth is the grain boundary energy. However, above $1000^{\circ}C$ the surface energy played an important role in the observed grain growth. When the sheet were annealed at $1200^{\circ}C$, the grains whose (100) planes were paralled to the thin plate surface grew, and all sheet surfaces were covered with these grains after 1 hour annealing. This phenomenon is called tertiary recrystallization. A difference in surface energy between (100) and (110) surfaces provides a driving force for growth of tertiary grains. The coercive force was 0.27 mOe and the AC core loss $W_{12/50}$ was 0.38w/kg for the 6.5wt%Si-Fe alloy.

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Crystal growth of BT-based ferroelectric films for nonvolatile memories

  • Yang, B.;Park, N.J.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.4
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    • pp.151-154
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    • 2004
  • Issues of ferroelectric high-density memories (>64 Mb) indispensable for upcoming ubiquitous era have been on the cell integration less than $0.1\;\mu\textrm{m}^2$ and reliabilities. Thus nanoscale control of microstructures of ferroelectric films with large switching polarization has been one of the issues to obtain the uniform electrical properties for realization of high-density memories. In this study the grain orientations and distributions of BT-based films by spin-on coatings were examined by FEG-SEM/EBSD. Ferroelectric domain characteristics by PFM were also performed to study the dependence of reliabilities on the grain orientations and distributions. It is believed that understandings of the nucleation and growth mechanisms of the a- or b-axis oriented films during the thermal processes such as RTA and furnace annealing affecting on grain orientation and uniformity could be possible based on our experimental results.

Dark-field Transmission Electron Microscopy Imaging Technique to Visualize the Local Structure of Two-dimensional Material; Graphene

  • Na, Min Young;Lee, Seung-Mo;Kim, Do Hyang;Chang, Hye Jung
    • Applied Microscopy
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    • v.45 no.1
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    • pp.23-31
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    • 2015
  • Dark field (DF) transmission electron microscopy image has become a popular characterization method for two-dimensional material, graphene, since it can visualize grain structure and multilayer islands, and further provide structural information such as crystal orientation relations, defects, etc. unlike other imaging tools. Here we present microstructure of graphene, particularly, using DF imaging. High-angle grain boundary formation wass observed in heat-treated chemical vapor deposition-grown graphene on the Si substrate using patch-quilted DF imaging processing, which is supposed to occur by strain around multilayer islands. Upon the crystal orientation between layers the multilayer islands were categorized into the oriented one and the twisted one, and their local structure were compared. In addition information from each diffraction spot in selected area diffraction pattern was summarized.

Properties of ZnO varistor using secondary seed grains (2차 seed grain을 사용한 ZnO varistor의 특성 연구)

  • 김형주;마재평;백수현
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1989.06a
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    • pp.87-92
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    • 1989
  • We fabricated primary and secondary seed grains. Primary seed grains having larger grain size were obtained under the conditions that were 2.0m/o BaCO$_3$ and 10 hours sintering. The amount of primary seed grain to yield the largest secondary seed grains were choosed as 3 w/o and we fabricated the low voltage varistors which were joined the low voltage-oriented ZnO varistor system made by conventional method with the secondary seed grains. As a result, ZnO varistor showed appoximately 10V/mm of nonlinear resistance and 15-22 of nonlinear exponent.

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The effect of impact directions and angels on erosion behavior of undirectionally oriented sillicon nitride (충돌 방향과 각도가 일방적으로 배향된 질화규소의 Erosion 거동에 미치는 영향)

  • Cho, Chang-Hee;Choi, Hyun-Joo;Lim, Dae-Soon;Jung, Jung-Sik;Park, Dong-Soo
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2001.11a
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    • pp.88-95
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    • 2001
  • Silicon nitride based ceramics reinforced with 3wt% Si$_{3}$N$_{4}$ whisker was prepared by tape casting to investigate the effect of microstructure on erosion behaviors. Hardness and fracture toughness were measured with prepared specimens. A gas blast type erosion tester was used to examine the erosion behavior of the specimens with different impact directions and angles. The erosion rate increases with increasing impact angle. Erosion rate of the silicon nitride ceramics also depends on the grain orientations, The erosion rate was lowered when impaction direction was parallel to the grain orientation This result was explained by the crack deflection and bridging due to the grain orientation.

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Characterization of Nano-Grained ZnO Piezoelectric Thin Films Deposited under Various Sputtering Conditions

  • Zhang, Ruirui;Lee, Eunju;Yoon, Giwan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2009.10a
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    • pp.428-430
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    • 2009
  • C-axis-oriented ZnO thin films were successfully deposited on p-Si (100) in an RF magnetron sputtering system. Deposition conditions such as deposition power, working pressure, and oxygen gas ratio were varied. Crystalline structures of the deposited ZnO films were investigated by a scanning electron microscope (SEM) technique. Results show that the deposition parameters can have a strong impact on the preferred orientations and grain sizes of the deposited ZnO films.

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Oriented Barium Titanate Ceramics Made from Fiber State Powder (섬유상 분말로 제조된 배향성을 가진 $BaTiO_3$ 세라믹)

  • 서용교;야나기다히로아끼
    • Journal of the Korean Ceramic Society
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    • v.30 no.12
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    • pp.1066-1070
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    • 1993
  • When looked upon as a polycrystalline, ceramics have two basic differences from a single crystal. One is that there exist grain boundaries, the other is that the crystal axes of each small crystal are arranged in random directions. But the crystal axes fo small crystals which compose ceramics may be made to have the tendency of being arranged in a specific direction. This is called that the crystal axes are oriented. The degree of the direction arrangement of the crystal axes is called orientation. In order to orient the crystal axes effectively, the fiberous barium titanates were made through KDC method and the ion exchange method. And then they were arranged through pressing, doctor blade, and syringe. As the result of Lotgering evaluation, the sample oriented through syringe showed the highest orientation. After sintering, though the most particles that had been fiberous shaped became global shape viewed through SEM, the orientation of the crystals was reinforced by means of sintering.

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Single Grained PZT Array Fabricated by Physical Etching of Pt Bottom Electrode

  • Park, Eung-Chul;Lee, Jang-Sik;Kim, Kwang-Ho;Park, Jung-Ho;Lee, Byung-Il
    • The Korean Journal of Ceramics
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    • v.6 no.1
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    • pp.74-77
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    • 2000
  • Ta-doped PZT thin films prepared by reactive co-sputtering method could be transformed into single grained perovskite structure utilizing physical etching of Pt bottom electrode. It is found that PZT perovskite phase on damaged (111) Pt electrode by IMD was more easily crystallized than random oriented Pt electrode and less crystallized than (111) Pt electrode. This shows that amorphized Pt electrode surface by IMD process has an effect on crystallization of PZT perovskite phase. 40$\mu\textrm{m}\times40\mu\textrm{m}$ square shape single grain PZT array could be obtained utilizing the difference of incubation time for nucleation of rosettes between ion damaged Pt and (111) oriented Pt electrode. Single grained PZT thin films show low leakage current density of $1\times10^{-7}$ A/$\textrm{cm}^2$ and high break down field of 440kV/cm. The loss of remanent polarization after $10^{11}$ cycles was less than 15% of initial value.

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