• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.133-136
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• 2003

The CeO$_2$ thin films were deposited on the biaxially textured Ni substrates by MOCVD process. The (200) oriented CeO$_2$ films were formed at the deposition temperature(Td) of 500~52$0^{\circ}C$, the oxygen partial pressure(PO2) of 0.90~3.33 torr and the deposition time(t) of 3~25 min. The surface roughness and gain size rapidly increased at Td $\geq$ 52$0^{\circ}C$ due to the grain growth. The surface roughness also increased as the deposition time increased. The optimized deposition conditions of the CeO$_2$ films for the YBCO coated conductor were Td= 500~51$0^{\circ}C$, PO2= 2.30 torr and t= 10~12 min.

• Journal of Magnetics
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• v.11 no.3
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• pp.103-107
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• 2006

In grain oriented electrical steel process, hot band annealing has thought to be essential for obtaining good magnetic properties. New hot rolling method of heavy reduction in early hot rolling stage was applied to obtain good magnetic properties in GO process without hot band annealing. Hot rolling was carried out by varyinghot rolling reduction distribution along hot rolling pass. The heavy hot rolling reduction in rear stand improves the magnetic flux density in the case of no hot band annealing. The hot band specimens of the heavy reduction in front stand shows the elongated hot deformed microstructures in the center layer and strong {001}<110> texture.On the contrary, the heavily reduced specimens in rear stand shows the recrystallization in the center layer of hot band and strong {111}<112> and {110}<001> textures.

• Korean Journal of Crystallography
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• v.4 no.2
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• pp.92-99
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• 1993

ZnO thin films were depositsd by Plasma enhanced CVD (PUW) using Diethylzinc and N2O gas, and micro-structue of ZnO thin films were investigated ZnO thin films composed of micro-crystallites was deposited at the substrate of loot. However, highly c-axis oriented ZnO thin films were deposited on the glass substrates above 200℃. TEM analysis revealed that an epitaxial (002) ZnO thin film was deposited on c-plane sapphire substrate at the substrate temperature of 350℃, and More patterns showing partial dislocation were observed at the grain boundary.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.17-22
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• 1998

B-doped ZnO thin films on glass substrates were prepared by sputtering the ceramic targets which had been prepared by sintering disks consisting of ZnO and various amounts of B2O3 While pure ZnO films show-ed a c-axis oriented growth the B-doping retarded the prefered orientation and grain growth of the film. Electron concentrations for undoped and B-doped ZnO films were on the order of 7.8${\times}$1018 cm-3 and 5${\times}${{{{ {10 }^{20 } }} c{{{{ {m }^{-3 } }} respectively. The electron mobility however decreased with the B-doping concentration. Optical meas-urements on the films showed that the average transmittance in the visible range was higher than 85% The measurements also indicated a blueshift of the absorption edge with doping.

• 전기의세계
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• v.20 no.3
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• pp.17-26
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• 1971

An experimental design of magnetic amplifiers and their characteristics in steady state are presented. A saturable reactor model having 2KVA capacity was designed, using Z-10 grain-oriented silicon steel which is commonly used in power transformers. Experimental and theoretical analysis show that the experimental results are in good agreement with the equal ampere-turns law. In addition to the saturable reactor, the self-saturated magnetic amplifiers of 0.4VA and 5VA capacity, using 50% Ni-Fe alloy cores having rectangular hysteresis loops were designed. Control characteristic curves of these amplifiers show high ampere-turn gain enough to be used for voltage controllers under load and non-contact magnetic switches of the rated capacity.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.10
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• pp.523-529
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• 1999

In the case of the large power transformer, the grain-oriented material is usually used. So, to obtain more accurate results, anisotropy and non-linearity of the material must be considered. The Newton-Raphson(NR) method is generally used for analyzing these non-linear properties, but it consumes so much time, especially when the number of nodes is large or the shape of the model is complex. The transmission line modeling (TLM) method is successfully adopted to the analysis of non-linear properties with FEM, but it has not been adopted to the analysis of the anisotropic material. In this paper, the formulation of the TLM method considering anisotropy is developed and the adoption to the 3-phase transformer is presented.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.2B no.4
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• pp.143-148
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• 2002

Up to now, DC-biased magnetic properties have been measured in one dimension (scalar). However, scalar magnetic properties are insufficient to clarify DC-biased magnetic properties because scalar magnetic properties can only impossibly consider the phase difference between the magnetic flux density B vector and the magnetic field strength H vector. Thus the magnetic field strength H and magnetic flux density B in magnetic materials must be directly measured as a vector quantity (two-dimensional). This paper presents measurement system to clarify the two-dimensional DC-biased magnetic properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.324-327
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• 2000

ZnO(Zinc Oxide) thin films were deposited on glass substrate by Facing Targets Sputtering. Facing Targets Sputtering system can deposit thin films in plasma-free situation and change the sputtering conditions in wide range. The characteristics of ZnO thin films deposited at variation of sputtering conditions films thickness, power and substrate temperature were evaluated by XRD(x-ray diffractometer), ${\alpha}$-step (Tencor). The excellently c-axis oriented ZnO thin films were obtained at sputter pressure ImTorr, power 150W, substrate temperature 200$^{\circ}C$. In these conditions, the rocking curve of ZnO thin films deposited on glass was 3.3$^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.901-904
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• 2000

In order to investigate the effect of deposition conditions on crystallographic properties of ZnO thin films by Facing Targets Sputtering system which can deposit thin films in plasma-free situation and change the deposition conditions in wide range. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step (Tencor) analyses. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature 300$^{\circ}C$, inter target distance 100mm. In these conditions, the rocking curve of zinc oxide thin films deposited on Glass was 3.9$^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.200-202
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• 2004

ZnO thin films were grown at different plume-substrate angles by pulsed laser deposition(PLD). From the X-ray diffraction(XRD) result, all ZnO thin films were found to be well c-axis oriented and c-axis lattice constant approached the value of bulk ZnO as plume-substrate(P-S) angle decreased. The grain size of ZnO thin films measured by atomic force microscopy increased and the UV intensity of ZnO thin films investigated by photoluminescence increased as P-S angle decreased. It is found that the improvement of structural and optical properties mainly comes from the reduction of the flux of ablated species arriving on a substrate per a laser shot by tilting a substrate parallel to the plume propagation direction.