• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.581-586
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• 2007

[ $(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ ] (BSCT) powders, prepared by sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing method. The structural and dielectric properties were investigated as a function of the $Yb_2O_3$ doping contents. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed the typical XRD patterns of a cubic polycrystalline structure. The average thickness of all BSCT thick films was about $70{\mu}m$. The grain size of the BSCT thick film doped with 0.7 mol% $Yb_2O_3$ was approximately $6.2{\mu}m$. The Curie temperature and relative dielectric constant at room temperature decreased with increasing $Yb_2O_3$ amount. Relative dielectric constant and dielectric loss of the specimen doped with 0.1 mol% $Yb_2O_3$ were 4637 and 19 % at Curie temperature, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.146.2-146.2
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• 2013

Copper is considered to be the most promising substrate for the growth of high-quality and large area graphene by chemical vapor deposition (CVD), in particular, on the (111) facet. Because the interactions between graphene and Cu substrates influence the orientation, quality, and properties of the synthesized graphene, we studied the interactions using angle-resolved photoemission spectroscopy. The evolution of both the Shockley surface state of the Cu(111) and the ${\pi}$ band of the graphene was measured from the initial stage of CVD growth to the formation of a monolayer. Graphene growth was initiated along the Cu(111) lattice, where the Dirac band crossed the Fermi energy (EF) at the K point without hybridization with the d-band of Cu. Then two rotated domains were additionally grown as the area covered with graphene became wider. The Dirac energy was about -0.4 eV and the energy of the Shockley surface state of Cu(111) shifted toward the EF by ~0.15 eV upon graphene formation. These results indicate weak interactions between graphene and Cu, and the electron transfer is limited to that between the Shockley surface state of Cu(111) and the ${\pi}$ band of graphene. This weak interaction and slight lattice mismatch between graphene and Cu resulted in the growth of rotated graphene domains ($9.6^{\circ}$ and $8.4^{\circ}$), which showed no significant differences in the Dirac band with respect to different orientations. These rotated graphene domains resulted in grain boundaries which would hinder a large-sized single monolayer growth on Cu substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.204.2-204.2
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• 2013

Wide band gap II-VI semiconductors have attracted the interest of many research groups during the past few years due to the possibility of their applications in light-emitting diodes and laser diodes. Among the II-VI semiconductors, ZnO is an important optoelectronic device material for use in the violet and blue regions because of its wide direct band gap (Eg ~3.37 eV) and large exciton binding energy (60 meV). F-doped ZnO (FZO) and undoped ZnO thin films were grown onto quartz substrate by the sol-gel spin-coating method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0 to 5 in 1 steps. To investigate the effects of the structure and optical properties of FZO thin films were investigated using X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL). In the XRD, the residual stress, FWHM, bond length, and average grain size were changed with increasing the doping concentration. For the PL spectra, the high INBE/IDLE ratio of the FZO thin films doping concentration at 1 at.% than the other samples.

• Journal of Welding and Joining
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• v.31 no.6
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• pp.50-57
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• 2013

Characterization of microstructures and cryogenic mechanical properties of electro beam (EB) welds between cast and forged Inconel 718 superalloys has been investigated. Optimal EBW condition was found in the beam current range of 36~39 mA with the constant travel speed of 12 mm/s and arc voltage of 120 kV for 10 mm-thick specimens. Electron beam current lower than 25 mA caused to occur the liquation microfissuring in cast-side heat affected zone (HAZ) of EB welds. The HAZ liquation microfissure was found on the liquated grain boundaries with resolidified ${\gamma}/Laves$ and ${\gamma}/NbC$ eutectic constituents. EBW produced welds showing a fine dendritic structure with relatively discrete Laves phase due to fast cooling rate. After post weld aging treatment, blocky Laves phase and formation of ${\gamma}^{\prime}+{\gamma}^{{\prime}{\prime}}$ strengtheners were observed. Presence of primary strengthener and coarse Laves particles in PWHT weld may cause to reduce micro-plastic zone ahead of a crack, leading to a significant decrease in Charpy impact toughness at $-196^{\circ}C$. Fracture initiation and propagation induced by Charpy impact testing were discussed in terms of the dislocation structures ahead of crack arisen from the fractured Laves phase.

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.439-443
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• 2005

The oxidation behavior and the thermal stability of nanocrystalline Al-25Ti-8Mn intermetallic compound were investigated. $Al_3Ti$ intermetallic compound, which has a potential for high temperature structural material, was fabricated by mechanical alloying(MA) with $8at.\%$ Mn to enhance the thermal stability and ductility. And Al-25Ti-8Mn intermetallic compound was sintered by spark plasma sintering(SPS) at $700^{\circ}C$. After sintering process, cubic $Ll_2$ structure was maintained without phase transformation and the grain size was about 50nm. To investigate the oxidation behavior of the specimens, thermal gravimetric analysis(TGA) was performed at 700, 800, 900, and $1000^{\circ}C$ for 24 h in $O_2$. As the temperature increased from $700^{\circ}C\;to\;900^{\circ}C$ the weight gain of specimens increased. However at $1000^{\circ}C$, unlike the oxidation behavior of $700^{\circ}C\;to\;900^{\circ}C$, the weight gain of specimen decreased drastically and the transition from linear rate region to parabolic rate region occurred rapidly due to the dense $\alpha-Al_2O_3$.

• Korean Journal of Materials Research
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• v.21 no.11
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• pp.611-616
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• 2011

Red-orange phosphors $Gd_{1-x}PO_4:{Eu_x}^{3+}$ (x = 0, 0.05, 0.10, 0.15, 0.20) were synthesized with changing the concentration of $Eu^{3+}$ ions using a solid-state reaction method. The crystal structures, surface morphology, and optical properties of the ceramic phosphors were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) spectrophotometry. The XRD results were in accordance with JCPDS (32-0386), and the crystal structures of all the red-orange phosphors were found to be a monoclinic system. The SEM results showed that the size of grains increases and then decreases as the concentration of $Eu^{3+}$ ionincreases. As for the PL properties, all of the ceramic phosphors, irrespective of $Eu^{3+}$ ion concentration, had orange and red emissions peaks at 594 nm and 613 nm, respectively. The maximum excitation and emission spectra were observed at 0.10 mol of $Eu^{3+}$ ion concentration, just like the grain size. An orange color stronger than the red means that $^5D_0{\rightarrow}^7F_1$ (magnetic dipole transition) is dominant over the $^5D_0{\rightarrow}^7F_2$ (electric dipole transition), and $Eu^{3+}$ is located at the center of the inversion symmetry. These properties contrasted with those of a red phosphor $Y_{1-x}PO_4:{Eu_x}^{3+}$, which has a tetragonal system. Therefore, we confirm that the crystal structure of the host material has a major effect on the resulting color.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.2
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• pp.41-48
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• 2018

In this study, microstructural changes due to extrusion, rolling and heat treatment were studied to fabricate Al-4.0wt%Zn-1.5wt%Mg-0.9wt%Cu alloys with homogeneous microstructure suitable for metal cases of smart phones and electronic products fabricated through plastic working. After extrusion microstructure and texture were developed very differently on the surface and inside. Inside, coarse grains were formed and a strong Cube component orientation was developed. On the surface, a weak texture was developed with small grains. After 72% cold rolling the intensity of the Cube component orientation was lower, and uniform texture was developed in all the layers and the R-value was uniformly predicted. After recrystallization, the grain size difference between at the surface and the inside is smaller, when 72% rolling was performed, indicating that a uniform structure is formed. Texture develops almost randomly after recrystallization and exhibits uniform R-values at all layers.

• Journal of the Korean institute of surface engineering
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• v.36 no.4
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• pp.296-300
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• 2003

Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.233-233
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• 2010

CdS thin films were deposited on glass substrates by R.F. magnetron sputtering method and some of the samples were treated by rapid thermal annealing (RTA) process. Effects of thermal annealing on structural and optical properties were investigated at different temperatures ranging from 100 to $600^{\circ}C$. The crystallographic structure of the films and the size of the crystallites in the films were studied by X-ray diffraction. The crystallite sizes were found to increase, and the X-ray diffraction patterns were seen to sharpen by annealing. Optical properties of the films were calculated using the envelope method and the photoluminescence measurements. The optical properties of the films were seen to be dependent on the film thicknesses. The energy gap of the films was found to decrease by annealing. The band edge sharpness of the optical absorption was seen to oscillate by thermal annealing. Annealing over $400^{\circ}C$ was seen to degrade the optical properties of the film. The best annealing temperature for the films was found to be $400^{\circ}C$ from the optical properties. It is observed that the CdS film annealed at $400^{\circ}C$ reveals the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied. The enhanced UV emission from the film annealed at $400^{\circ}C$ is attributed to the improved crystalline quality of CdS thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size. The results show that heat treatments under optimal annealing condition can provide significant improvements in the properties of CdS thin films.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.9
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• pp.1615-1622
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• 2008

We have fabricated the poly-silicon thin film transistor(TFT) which has the LDD-region with graded spacer. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $H_2$/plasma processes were fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring/analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si grain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplicities of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.