• Korean Journal of Crystallography
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• v.6 no.1
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• pp.14-26
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• 1995

The growth mechanism of diamond thin films, deposited by Hot Filament CVD, was investigated through observation of changes in their surface morphology as a function of the substance temperature and deposition time. Amorphous carbon or DLC thin films were deposited at low substrate temperature. Diamond films consisting of square-shaped particles, whose surfaces are (100) planes, were deposited at an intermedate temperature. At high substrate temperatures, diamond films consisting of the particles showing both (100) and (111) plane were deposited. The (100) proferred orientation of the diamond films are believed to be due to a relatively high supersaturation during deposition, and the growth condition for the diamond films having (100) preferred orientation can be applied to the single crystal growth since no twins are generated on the (100) plane. The grain size of the diamond films did not change with increasing temperature and its increasing rate with increasing deposition time was the same irrespective of the substrate temperature. However, the nucleation density increased with substrate temperature and its increasing rate with deposition time was much higher for the films deposited at higher substrate temperature.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.190-194
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• 2012

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.55.1-55.1
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• 2010

Cost efficient and large area deposition of superior quality $Al_2O_3$ doped zinc oxide (AZO) films is instrumental in many of its applications including solar cell fabrication due to its numerous advantages over ITO films. In this study, AZO films were prepared by a highly efficient rotating cylindrical dc magnetron sputtering system using AZO target, which has a target material utilization above 80%, on glass substrates in argon ambient. A detailed analysis on the electrical, optical and structural characteristics of AZO thin films was carried out for solar cell application. The properties of films were found to critically depend on deposition parameters such as sputtering power, substrate temperature, working pressure, and thickness of the films. A low resistivity of ${\sim}5.5{\times}10-4{\Omega}-cm$ was obtained for films deposited at 2kW, keeping the pressure and substrate temperature constant at 3 mtorr and $230^{\circ}C$ respectively, mainly due to an increase in carrier mobility and large grain size which would reduce the grain boundary scattering. The increase in carrier mobility with power can be attributed to the columnar growth of AZO film with (002) preferred orientation as revealed by XRD analysis. The AZO films showed a high transparency of>87% in the visible wavelength region irrespective of deposition conditions. Our results offers a cost-efficient AZO film deposition method which can fabricate films with significant low resistivity and high transmittance that can find application in thin-film solar cells.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.828-836
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• 1994

In order to investigate the high temperature deformation characteristics in YBaiCu307-, oxide superconductor, the compression test was performed at temperatures from $890^{\circ}C$ to $930^{\circ}C$ at initial strain rate between $1.0 x 10^{-5}s^{-1}\; and \; 1.0^{-4}s^{-1}$. As the temperature increased and the initial strain rate decreased, the flow stress decreased. The strain rate sensitivity exponent measured as 0.41-0.46, supporting occurence of a superplastic deformation. The activation energy for superplastic deformation was calculated as 500-580KJ/mol, which decreased with increasing Ag content. Microstructure of the superplastically-deformed specimens showed that a grain growth occurred during deformation, and it appeared to be considerable when Ag content increased, but most grains still remained equiaxed after deformation. In this study, the deformation mechanism of YBCO superconductor was the grain boundary sliding with the diffusional accommodation and the contribution of the gram boundary sliding to the total strain was estimated to be 65%.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.531-536
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• 2013

This paper investigates the effect of prolonged high temperature exposure on concentric laminated $Al_2O_3-ZrO_2$ composites. An ultrafine scale microstructure with a cellular 7 layer concentric lamination with unidirectional alignment was fabricated by a multi-pass extrusion method. Each laminate in the microstructure was $2-3{\mu}m$ thick. An alternate lamina was composed of 75%$Al_2O_3$-(25%m-$ZrO_2$) and t-$ZrO_2$ ceramics. The composite was sintered at $1500^{\circ}C$ and subjected to $1450^{\circ}C$ temperature for 24 hours to 72 hours. We investigated the effect of long time high temperature exposure on the generation of residual stress and grain growth and their effect on the overall stability of the composites. The residual stress development and its subsequent effect on the microstructure with the edge cracking behavior mechanism were investigated. The residual stress in the concentric laminated microstructure causes extensive micro cracks in the t-$ZrO_2$ layer, despite the very thin laminate thickness. The material properties like Vickers hardness and fracture toughness were measured and evaluated along with the microstructure of the composites with prolonged high temperature exposure.

• Journal of the Korean Ceramic Society
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• v.43 no.3 s.286
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• pp.193-197
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• 2006

Symmetric three-layer $Al_2O_3/ZrO_2$ composite has been prepared by freeze casting and pressureless sintering at $1400-1600^{\circ}C$ in air. The layered material sintered at $1600^{\circ}C$ showed the maximum fracture strength (410 MPa), measured by a four-point bending test. Contact damage strength was superior in three-layer composite compared with corresponding mono-layered material, possibly due to the development of relatively large compressive stress. The grain growth of $ZrO_2$ particles was mainly governed by coalescence mechanism.

• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.704-712
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• 1988

In order to investigate the effect of the second phase on Al2O3 matrix, SiC whisker was dispersed in Al2O3 matrix as a second phase over the content range of 5vol% to 20vol%. To this mixture, Y2O3 or TiO2 powder was added as a sintering additive before isostatically pressing and pressureless sintering at 1800-190$0^{\circ}C$ for 90min in N2 atmosphere. With increasing SiC whisker content, relative densities of composites were decreased and the grain growth of Al2O3 was restricted. When Y2O3 was added as a sintering aid the sintering temperature was 180$0^{\circ}C$, the maximum values of flexural strength, hardness and fracture toughness were 537MPa, 12.1GPa, 3.7MPa.m1/2, respectively. However, when the sintering temperature was elevated to 190$0^{\circ}C$, maximum values of flexural strength, hardness and fracture toughness were 453MPa, 17.5GPa, 4.9MPa.m1/2, respectively. Improved mechanical properties are assumed to be attributed to the crack deflection by the second phase SiC whisker and whisker pullout mechanism.

• Korean Journal of Plant Resources
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• v.11 no.1
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• pp.93-100
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• 1998

This study was to investigate the dry weight, the amount of Na+ and K+ water potential and leaf photosynthesis rate in plants for determining the salt tolerance mechanism in rice cultivars on soil and solution culture with NaCl. The results obtained in this study are summarized as follows ; In general, rice cultivars, cv. Tetep and Jinbu, having high salt tolerance in ID(identified on dry matter production level) showed the higher salt tolerance in RGR (relative growth rate), compared with rice cultivars(cv. Nonglim 41ho, Dunraebyeo and Sobackbyeo) having low salt tolerance. The contents of Na in rice differed depending on culivars and plant parts. Tetep contained 2.9times higher amounts of Na+ than leaf blade and root part. High salt tolerance cultivar Obongbyeo showed a larger decrease in osmotic potential than low salt tolerance cultivar Dunraebyeo suggesting that osmotic adjustment was developed under salt stress conditions in a salt tolerant cultivar . In order to know the IY(identified on grain yeild level using rice cultivars having different salt tolerance the capacity of photosyntheiss was investigated. The capapcity of photosynthesis in cv. Tetep and Obongbyeo having high salt tolerance was much higher that in cv.Dunraebyeo and Nonglim 41 having low salt tolerance.

• Korean Journal of Metals and Materials
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• v.47 no.12
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• pp.787-796
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• 2009

The fracture toughness improvement of Ni-Mn-Ga-Fe ferromagnetic shape memory alloys containing ductile particles was explained by direct observation of microfracture processes using an in situ loading stage installed inside a scanning electron microscope (SEM) chamber. The Ni-Mn-Ga-Fe alloys contained a considerable amount of ductile particles in the grains after the homogenization treatment at $800{\sim}1100^{\circ}C$. ${\gamma}$ particles were coarsened and distributed homogeneously along {$\beta}$ grain boundaries as well as inside {$\beta}$ grains as the homogenization temperature increased. The in situ microfracture observation results indicated that ${\gamma}$ particles effectively acted as blocking sites of crack propagation, and provided stable crack growth that could be confirmed by the R-curve analysis. This increase in fracture resistance with increasing crack length improved overall fracture properties of the alloys containing ${\gamma}$ particles.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.377-383
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• 1997

Yttria-stabilized TZP alloyed with pentavalent oxides $(Ta_2O_5,\;Nb_2O_5)$ were fabricated by the conventional sintering method at $1500^{\circ}C$ in air to construct the simplified ternary phase diagram. The phase stability of tetragonal -$ZrO_2$ from the quasi-binary system $ZrO_2-YTa(Nb)O_4$, which do not transform to monoclinic-$ZrO_2$ even for a wide range of grain size and annealing temperature, was investigated to determine composition region of the non-transformable $t-ZrO_2$ solid solution$(NT_{ss})$. Phase stability of $NT_{ss}$ was probably due to the enhanced stability of $_YTa(Nb)O4$ having the tetragonal fergusonite structure. It was experimentally found that mixtures having $NT_{ss}$ alloyed with $T_{ss}$ by weight%% showed both excellent phase stability of $t-ZrO_2$ and fracture toughness even though the calculated composition of the mixture /was located outside $NT_{ss}$ composition region.