• Korean Journal of Materials Research
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• v.18 no.9
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• pp.470-474
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• 2008

Composites of gadolinium-doped ceria/magnesia(CGO/MgO) were synthesized and characterized for the electrolytes of intermediate temperature solid oxide fuel cells. XRD and SEM results revealed that composite electrolytes consisted of their own phases after sintering at $1400^{\circ}C$ without noticeable solid solution of Mg into CGO. As the MgO content increased, the total electrical conductivity decreased, which might be attributed to the decrease of grain boundary conductivity, possibly due to the lowering of the continuity of the CGO grains and blocking effects of the insulating MgO phase. The space charge effect may not be a significant factor to affect the electrical conductivity of the CGO/MgO composites.

• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.827-831
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• 2008

Spark plasma sintering (SPS) of AlN ceramics were carried out with ${Y_2}{O_3}$ as sintering additive at a sintering temperature $1,550{\sim}1,700^{\circ}C$. The effect of ${Y_2}{O_3}$ addition on sintering behavior and thermal conductivity of AlN ceramics was studied. ${Y_2}{O_3}$ added AlN showed higher densification rate than pure AlN noticeably, but the formation of yttrium aluminates phases by the solid-state reaction of ${Y_2}{O_3}$ and ${Al_2}{O_3}$ existed on AlN surface could delay the densification during the sintering process. The thermal conductivity of AlN specimens was promoted by the addition of ${Y_2}{O_3}$ up to 3 wt% in spite of the formation of YAG secondary phase in AlN grain boundaries because ${Y_2}{O_3}$ addition could reduced the oxygen contents in AlN lattice which is primary factor of thermal conductivity. However, the thermal conductivity rather decreased over 3 wt% addition because an immoderate formation of YAG phases in grain boundary could decrease thermal conductivity by a phonon scattering surpassing the contribution of ${Y_2}{O_3}$ addition.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.572-577
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• 1996

Alternating current and direct current of pure, ball milled, and $Al_{2}$O$_{3}$ added ZnO were investigated by means of complex impedance measurement and voltage-current source measurement unit. The electrical conductivity of A1$_{2}$O$_{3}$ added ZnO samples increases when the content of A1$_{2}$O$_{3}$ is used within 1 at% and decreases when it's used more than that. The increase and decrease of electrical conductivity seem to be the donor effect of $Al_{2}$O$_{3}$ and the increase of the number of ZnO grains, respectively. Impedance spectrum seems to be one semircicle. The size of semicircle increase with increasing the A1$_{2}$O$_{3}$ contents. The calculated dielectric constant(at 50.deg. C) were about 70-140 at the peak of the semicircle. The semicircles seem not to be the resistance of ZnO grain as compared to that of 10 for pure ZnO.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.5
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• pp.187-191
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• 2019

Perovskite-type oxides have consistently attracted considerable attention for their applications in high-temperature electrochemical devices, such as electrolytes and electrodes of solid oxide fuel cells, oxygen permeating membranes and sensors etc. Among them, the electrical conductivity of 10 % Sr and 10 % Mg doped $LaAlO_3$ (LSAM9191) was measured using impedance spectroscopy and 4-probe d.c. method. Below $550^{\circ}C$, the grain boundary resistance mostly determined the overall conductivity; however, it nearly disappeared above $800^{\circ}C$. Using the defect model and curve fitting, the ionic and electronic conductivity contributions were also separated. In the temperature region where the sample resistance is mostly determined by the grain volume property, LSAM9191 was an oxygen ion conductor at low $Po_2$ and a mixed conductor at high $Po_2$. With increasing temperature, the ionic conduction region only slightly increased. Thus, LSAM9191 is a promising material as an oxygen ion conductor at high temperature and in low $Po_2$.

• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.760-765
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• 2008

In this study, the effects of small amounts (${\leq}3\;mol%$) of Li doping on the sintering characteristics and electrochemical performance of $(ZrO_2)_{0.89}(ScO_{1.5})_{0.1}(CeO_2)_{0.01}$ (ScSZ) were investigated. By adding 3 mol% lithium, the densification temperature of ScSZ was reduced from the conventional temperature of $1400^{\circ}C$ to $1200^{\circ}C$. It was found that Li doping also led to changes in the Zr:Sc ratio at the grain boundaries. Correspondingly, the dispersion of lithium zirconia at the grain boundaries accelerated the growth of ScSZ grains and increased the grain boundary resistance at temperatures below $450^{\circ}C$. At elevated temperatures of $450{\sim}750^{\circ}C$, the electrical conductivity of the ScSZ after doping remained almost unchanged under air and reducing atmospheres. These results suggest that the addition of lithium is promising for use in low temperature co-firing of ScSZ-based components for intermediate temperature solid oxide fuel cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.141-146
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• 2020

Thermoelectric Bi₂Te₃ thin films were synthesized by a co-sputtering method at 300℃. A Fe dopant was considered to enhance the thermoelectric properties of the system. The Seebeck coefficient of the Fe-doped films increased whereas the electrical conductivity decreased. As a result, the power factor of the system increased owing to the enhanced Seebeck coefficient. Grain growth inhibition was detected in the Fe-doped system, which produced more grain boundaries in the Fe-doped films than in the undoped system. The increased grain boundary scattering was deemed to be effective for a reduced thermal conductivity. This is advantageous for the preparation of high-performance thermoelectric films.

• Korean Journal of Materials Research
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• v.34 no.4
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• pp.185-193
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• 2024

In this study, NASICON-type Li_1+XGa_XTi_2-X(PO₄)₃ (x = 0.1, 0.3 and 0.4) solid-state electrolytes for all-solid-state batteries were synthesized through the sol-gel method. In addition, the influence on the ion conductivity of solid-state electrolytes when partially substituted for Ti⁴⁺ (0.61Å) site to Ga³⁺ (0.62Å) of trivalent cations was investigated. The obtained precursor was heat treated at 450 ℃, and a single crystalline phase of Li_1+XGa_XTi_2-X(PO₄)₃ systems was obtained at a calcination temperature above 650 ℃. Additionally, the calcinated powders were pelletized and sintered at temperatures from 800 ℃ to 1,000 ℃ at 100 ℃ intervals. The synthesized powder and sintered bodies of Li_1+XGa_XTi_2-X(PO₄)₃ were characterized using TG-DTA, XRD, XPS and FE-SEM. The ionic conduction properties as solid-state electrolytes were investigated by AC impedance. As a result, Li_1+XGa_XTi_2-X(PO₄)₃ was successfully produced in all cases. However, a GaPO₄ impurity was formed due to the high sintering temperatures and high Ga content. The crystallinity of Li_1+XGa_XTi_2-X(PO₄)₃ increased with the sintering temperature as evidenced by FE-SEM observations, which demonstrated that the edges of the larger cube-shaped grains become sharper with increases in the sintering temperature. In samples with high sintering temperatures at 1,000 ℃ and high Ga content above 0.3, coarsening of grains occurred. This resulted in the formation of many grain boundaries, leading to low sinterability. These two factors, the impurity and grain boundary, have an enormous impact on the properties of Li_1+XGa_XTi_2-X(PO₄)₃. The Li_1.3Ga_0.3Ti_1.7(PO₄)₃ pellet sintered at 900 ℃ was denser than those sintered at other conditions, showing the highest total ion conductivity of 7.66 × 10^-5 S/cm at room temperature. The total activation energy of Li-ion transport for the Li_1.3Ga_0.3Ti_1.7(PO₄)₃ solid-state electrolyte was estimated to be as low as 0.36 eV. Although the Li_1+XGa_XTi_2-X(PO₄)₃ sintered at 1,000 ℃ had a relatively high apparent density, it had less total ionic conductivity due to an increase in the grain-boundary resistance with coarse grains.

• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.696-702
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• 2007

The family of (Sr,Mg)-doped $LaGaO_3$ compounds, which exhibit high ionic conductivity at $600-800^{\circ}C$ over a wide range of oxygen partial pressure, appears to be promising as the electrolyte for intermediate temperature solid oxide fuel cells. Conventional synthesis routes of (Sr,Mg)-doped $LaGaO_3$ compounds based on solid state reaction have some problems such as the formation of impurity phases, long sintering time and Ga loss during high temperature sintering. Phase stability problem especially, the formation of additional phases at the grain boundary is detrimental to the electrical properties of the electrolyte. From this point of view, we focused to synthesize single phase (Sr,Mg)-doped $LaGaO_3$ electrolyte at the stage of powder synthesis and to apply relatively low heat-treatment temperature using novel synthesis route based on combustion method. The synthesized powder and sintered bulk electrolytes were characterized by XRD, TG-DTA, FT-IR and SEM. AC impedance spectroscopy was used to characterize the electrical transport properties of the electrolyte with the consideration of the contribution of the bulk lattice and grain boundary to the total conductivity. Finally, relationship between synthesis condition and electrical properties of the (Sr, Mg)-doped $LaGaO_3$ electrolytes was discussed with the consideration of phase analysis results.

• Journal of Powder Materials
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• v.23 no.5
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• pp.379-383
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• 2016

A thick film of $Li_7La_3Zr_2O_{12}$ (LLZO) solid-state electrolyte is fabricated using the tape casting process and is compared to a bulk specimen in terms of the density, microstructure, and ion conductivity. The final thickness of LLZO film after sintering is $240{\mu}m$ which is stacked up with four sheets of LLZO green films including polymeric binders. The relative density of the LLZO film is 83%, which is almost the same as that of the bulk specimen. The ion conductivity of a LLZO thick film is $2.81{\times}10^{-4}S/cm$, which is also similar to that of the bulk specimen, $2.54{\times}10^{-4}S/cm$. However, the microstructure shows a large difference in the grain size between the thick film and the bulk specimen. Although the grain boundary area is different between the thick film and the bulk specimen, the fact that both the ion conductivities are very similar means that no secondary phase exists at the grain boundary, which is thought to originate from nonstoichiometry or contamination.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.6
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• pp.235-242
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• 2018

High temperature electrical conductivity of Aluminum Nitride (AlN) ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to various sintering conditions and MgO-dopant. When magnesium oxide is added as a dopant, liquid glass-film and crystalline phases such as spinel, perovskite are formed as second phases, which affects their electrical properties. According to high temperature impedance analysis, MgO doping leads to reduction of activation energy and electrical resistivity due to AlN grains. On the other hand, the activation energy and electrical resistivity due to grain boundary were increased by MgO doping. This is a result of the formation of liquid glass film in the grain boundary, which contains Mg ions, or the elevation of schottky barrier due to the precipitation of Mg in the grain boundary. For the annealed sample of MgO doped AlN, the electrical resistivity and activation energy were increased further compared to MgO doped AlN, which results from diffusion of Mg in the grains from grain boundary as shown in the microstructure.