• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.372-379
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• 1999

Hihg-toughened ceria-stabilized tetragonal zirconia ceramics with irregular grain shape and undulated grain boundary was prepared by ceria doping. Irregularity of grain shapes was increased with the amount of doped ceria. But in case of the large amount of doped ceria grain boundary was migrated to the reverse direction of DIGM. Ceria-stabilized zirconia ceramics annealed at 1650$^{\circ}C$ for 2h after twice dippings into cerium nitrate solu-tion of 0.2M and sintering at 1500$^{\circ}C$ for 2h showed the highest grain boundary length with a value of 23.6$\mu\textrm{m}$ Ceria concentration difference between convex and concave sides in irregular grains was observed over 1 mol% but not observed in normal grains, Specimens with normal grain shape showed intergranular fracture mode whereas the specimens with irregular grain shape showed transgranular fracture mode.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1997.03a
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• pp.73-76
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• 1997

Nanocrystalline materials have been modeled as a mixture of the crystallite and the grain boundary phases. The mechanical property has been calculated using the rule of mixtures based on the volume fractions. The critical grain size concept suggested by Nieh and Wadsworth and porous material model suggested by Lee and Kim were applied to the calculation. The theoretical results fit very well with the experimental values

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.255-262
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• 2020

Grain boundaries play a major role in determining device performance, particularly of polysilicon-based photodetectors. Through the post-annealing of as-deposited polysilicon and then, the analysis of electric behavior for a metal-polysilicon-metal (MSM) photodetector, we were able to identify the influence of grain boundaries. A modified model of polysilicon grain boundaries in the MSM structure is presented, which uses a crystalline-interfacial layer-SiO_x layer- interfacial layer-crystalline system that is similar to the Si-SiO₂ system in MOS device. Hydrogen passivation was achieved through a hydrogen ion implantation process and was used to passivate the defects at both interfacial layers. The thin SiO_x layer at the grain boundary can enhance the photosensitivity of an MSM photodetector by decreasing the dark current and increasing the light absorption.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.262-266
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• 2000

We investigated the effect of the grain size on the photovoltaic current in (Pb$_{1-x}$La$_x$)TiO$_3$ceramics, and the photoinduced domain switching in (Pb$_{0.85}$La$_{0.15}$)TiO$_3$and BaTiO$_3$ceramics. These behaviors in ferroelectric ceramics were attributed to the grain boundary at which photoexcited electrons were trapped. As the charged grain boundary acted as an electro-potential barrier which impeded the movement of electrons, the photovoltaic current showed a peak at a critical grain size. The space charge field built by the electrons trapped at the grain bound-aries was accounted for the photoinduced domain switching, and AE experimental results support well this account.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.3
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• pp.273-278
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• 2014

On poly and single crystalline Cu substrates, the graphene was synthesized by chemical vapor deposition(CVD). Optical microscopic images which were not possible to show the detailed characterization of graphene growth were adjusted and analyzed using image analyzing software. As a result it was possible to show the detailed growth mechanism of graphene by utilizing the image analysis. Nucleation of graphene on Cu grain boundary and its growth behavior into Cu grain are shown. In addition, the movement of graphene grain boundary interacting with Cu grain boundary and pinholes during growth was illustrated in detail, and the cause and result are discussed as a result of those interactions.

• Nuclear Engineering and Technology
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• v.34 no.2
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• pp.132-141
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• 2002

The effects of microstructure on fretting wear were investigated in Inconel 690 tube. The microstructure observation indicated that the solution annealing temperature and time affected the grain size of the Inconel 690 tubes. The carbide morphology, along grain boundaries, was mainly affected by thermal treatment time and temperature. The wear test results showed that specimens with larger grain size and with coarse carbides along grain boundaries had better wear resistance. Cracks were found in specimens with carbides along the grain boundary, while few cracks were found in carbide free specimens. It seemed that the carbides on grain boundary assisted crack formation and propagation in carbide containing specimens. On the other hand, the micro-hardness of specimen did not have a major role in fretting wear. It could be inferred from the SEM images of worn surfaces that the main wear mechanism of carbide containing specimen was delamination, while that of carbide free specimen was abrasion.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.37-41
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• 2010

Creep tests were conducted under a condition of constant stress on two aluminum-based alloys containing particles: Al-5% Mg-0.25% Fe and Al-5% Zn-0.22% Fe. The role of grain boundary sliding was examined in the plane of the surface using a square grid printed on the surface by carbon deposition and perpendicular to the surface using two-beam interferometry. Estimates of the contribution of grain boundary sliding to the total strain, $\varepsilon_{gbs}/\varepsilon_t$ reveal two trends; (i) the sliding contribution is consistently higher in the Al-Mg-Fe alloy, and (ii) the sliding contribution is essentially independent of strain in the Al-Mg-Fe alloy, but it shows a significant decrease with increasing strain in the Al-Zn-Fe alloy. Sliding is inhibited by the presence of particles and its contributions to the total strain are low. This inhibition is attributed to the interaction between the grain boundary dislocations responsible for sliding and particles in the boundaries.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.4
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• pp.1177-1185
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• 1996

The crack growth under creep condition is one of the major damage mechanisms which determines remaining life of the component operating at high temperatures. In this paper, the creep crack growth by grain boundary cavitation is studied, which is frequently observed failure mechanism for creep brittle materials. As a result of diffusive growth of creep cavities, it is shown that the crack-tip stress field is modified from the original stress distribution by the amount of singularity attenuation parameter which is function of crack growth rate and material properties. Also, the stress relaxation at crack-tip results in the extension of cavitating area by the load dump effect to meet the macroscopic force equilibrium conditdion.

• Transactions of Materials Processing
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• v.14 no.1 s.73
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• pp.65-70
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• 2005

A phase mixture model was employed to simulate the deformation behaviour of metallic materials covering a wide grain size range from micrometer to nanometer scale. In this model a polycrystalline material is treated as a mixture of two phases: grain interior phase whose plastic deformation is governed by dislocation and diffusion mechanisms and grain boundary 'phase' whose plastic flow is controlled by a boundary diffusion mechanism. The main target of this study was the effect of grain size on stress and its strain rate sensitivity as well as on the strain hardening. Conventional Hall-Petch behaviour in coarse grained materials at high strain rates governed by the dislocation glide mechanism was shown to be replaced with inverse Hall-Petch behaviour in ultrafine grained materials at low strain rates, when both phases deform predominantly by diffusion controlled mechanisms. The model predictions are illustrated by examples from literature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.4
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• pp.178-182
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• 2012

The grain growth is very important because of its great influence on the various materials properties. Therefore, in this study, the effects of anisotropic grain boundary energy on grain growth in 2-D have been investigated with a large scale phase field simulation model on PC. A $2000{\times}2000$ grid system and the initial number of grains of about 73,000 were used in the computer simulation. The anisotropic ratio of grain boundary energy, ${\sigma}_{max}/{\sigma}_{min}$, has been varied from 1 to 3. As the anisotropy increased, the grain growth exponent, n, increased from 2.05 to 2.37. The grain size distribution showed a central plateau in the isotropic case, and was changed into no central plateau and the increasing population of very small grains in the anisotropic case, resulting from slowly disappearing grains. Finally, simulated microstructures were compared according to anisotropy.