• Title/Summary/Keyword: Grain Boundary

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Effects of Serrated Grain Boundary Structures on Boron Enrichment and Liquation Cracking Behavior in the Simulated Weld Heat-Affected Zone of a Ni-Based Superalloy (니켈기 초내열합금의 파형 결정립계 구조가 보론 편석과 재현 열영향부 액화균열거동에 미치는 영향)

  • Hong, Hyun-Uk;Choi, June-Woo;Bae, Sang-Hyun;Yoon, Joong-Geun;Kim, In-Soo;Choi, Baig-Gyu;Kim, Dong-Jin;Jo, Chang-Yong
    • Journal of Welding and Joining
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    • v.31 no.3
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    • pp.31-38
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    • 2013
  • The transition of serrated grain boundary and its effect on liquation behavior in the simulated weld heat-affected zone (HAZ) have been investigated in a wrought Ni-based superalloy Alloy 263. Recently, the present authors have found that grain boundary serration occurs in the absence of adjacent coarse ${\gamma}^{\prime}$ particles or $M_{23}C_6$ carbides when a specimen is direct-aged with a combination of slow cooling from solution treatment temperature to aging temperature. The present study was initiated to determine the interdependence of the serration and HAZ property with a consideration of this serration as a potential for the use of a hot-cracking resistant microstructure. A crystallographic study indicated that the serration led to a change in grain boundary character as special boundary with a lower interfacial energy as those terminated by low-index {111} boundary planes. It was found that the serrated grain boundaries are highly resistant to boron enrichment, and suppress effectively grain coarsening in HAZ. Furthermore, the serrated grain boundaries showed a higher resistance to susceptibility of liquation cracking. These results was discussed in terms of a significant decrease in interfacial energy of grain boundary by the serration.

Computational and Experimental Study of Grain Growth in WC-Co and WC-VC-Co Cemented Carbides

  • Shin, Soon-Gi
    • Korean Journal of Materials Research
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    • v.19 no.11
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    • pp.588-595
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    • 2009
  • The knowledge of grain growth of carbide particles is very important for manufacturing micrograined cemented carbides. In the present study, continuous and discontinuous grain growth in WC-Co and WC-VC-Co cemented carbides is investigated using the Monte Carlo computer simulation technique. The Ostwald ripening process (solution/re-precipitation) and the grain boundary migration process are assumed in the simulation as the grain growth mechanism. The effects of liquid phase fraction, grain boundary energy and implanted coarse grain are examined. At higher liquid phase content, mass transfer via solid/liquid interfaces plays a major role in grain growth. Growth rate of the implanted grain was higher than that of the matrix grains through solution/re-precipitation and coalescence with neighboring grains. The results of these simulations qualitatively agree with experimental ones and suggest that distribution of liquid phase and carbide particle/carbide grain boundary energy as well as contamination by coarse grain are important factors controlling discontinuous grain growth in WC-Co and WC-VC-Co cemented carbides. The contamination by coarse grains must by avoided in the manufacturing process of fine grain cemented carbides, especially with low Co.

Three-Dimensional Crystallizing $\pi$-Bondings and Creep of Metals

  • Oh, Hung-Kuk
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 1995.03a
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    • pp.238-251
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    • 1995
  • Creep of metals has been explained conventionally by dislocation climb and grain boundary sliding indiffusion controlled process. The reorienations of the atoms in the grain by three dimensional crystallizing $\pi$-bondings are visualized as grain rotatins during slow deformation, fold formatin at triple point, increased crevice dspace between grains. grain boundary sliding, grain boundary micration and formation of cracks at the grain boundaries . And also the rupture time and average creep strain rate are explained by the three-dimensional crystallizing $\pi$- bondings and they can be determined by uniaxial tensile test.

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Decohesion of <100> Symmetric Tilt Copper Grain Boundary by Tensile Load Using Molecular Dynamics Simulation (경사진 <100> 결정립계의 계면분리 거동에 관한 분자동역학 전산모사)

  • Nguyen, Thao;Cho, Maeng-Hyo
    • Proceedings of the Computational Structural Engineering Institute Conference
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    • 2009.04a
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    • pp.38-41
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    • 2009
  • Debonding behavior of symmetric tilt bicrystal interfaces with <100> misorientation axis is investigated through molecular dynamics simulations. FCC single crystal copper is considered in each grain and the model is idealized as a grain boundary under mechanical loading. Embedded-Atom Method potential is chosen to calculate the interatomic forces between atoms. Constrained tensile deformations are applied to a variety of misorientation angles in order to estimate the effect of grain boundary angle on local peak stress. A new parameter of symmetric grain-boundary structure is introduced and refines the correlation between grain boundary angle and local peak stress.

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Deformation Mechanism Map for Creep and Superplastic Deformation in $YBa_2Cu_3O_{7-x}$ Ceramic Superconductors ($YBa_2Cu_3O_{7-x}$ 세라믹 초전도체의 크리프와 초소성변형에 대한 변형기관도)

  • 윤존도;초우예
    • Journal of the Korean Ceramic Society
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    • v.33 no.6
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    • pp.718-724
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    • 1996
  • Deformation mechanism map of Langdon-Mohammed type for YBa2Cu3O7-x superconducting ceramic was constructed by considering mechanisms of Nabarro-Herring Coble and powder-law creep and grain boundary sliding (GBS) with an accommodation by grain boundary diffusion. The map was found consistent with experi-mental results not only of the creep the also of the superplastic deformation. It showed the transition from interface reaction-controlled to the grain boundary diffusion-controlled GBS mechanism at about 1 ${\mu}{\textrm}{m}$ grain size and 100 MPa flow stress in agreement with the experimental results.

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A study on efficiency improvement of poly-Si solar cell using a selective etching along the grain boundaries (결정입계 선택적 식각 기법을 적용한 다결정 규소 태양전지의 효율 향상에 관한 연구)

  • 임동건;이수은;박성현;이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.597-600
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    • 1999
  • A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.

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Tracer Concentration Contours in Grain Lattice and Grain Boundary Diffusion

  • Kim, Yong-Soo;Donald R. Olander
    • Nuclear Engineering and Technology
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    • v.29 no.1
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    • pp.7-14
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    • 1997
  • Grain boundary diffusion plays a significant role in fission gas release, which is one of the crucial processes dominating nuclear fuel performance. Gaseous fission produce such as Xe and Kr generated during nuclear fission have to diffuse in the grain lattice and the boundary inside fuel pellets before they reach the open spaces in a fuel rod. These processes can be studied by 'tracer diffusion' techniques, by which grain boundary diffusivity can be estimated and directly used for low burn-up fission gas release analysis. However, only a few models accounting for the both processes are available and mostly handle them numerically due to mathematical complexity. Also the numerical solution has limitations in a practical use. In this paper, an approximate analytical solution in case of stationary grain boundary in a polycrystalline solid is developed for the tracer diffusion techniques. This closed-form solution is compared to available exact and numerical solutions and it turns out that it makes computation not only greatly easier but also more accurate than previous models. It can be applied to theoretical modelings for low bum-up fission gas release phenomena and experimental analyses as well, especially for PIE (post irradiation examination).

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CONCENTRATION CONTOURS IN LATTICE AND GRAIN BOUNDARY DIFFUSION IN A POLYCRYSTALLINE SOLID

  • Kim, Yongsoo;Wonmok Jae;Saied, Usama-El;Donald R. Olander
    • Proceedings of the Korean Nuclear Society Conference
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    • 1995.05a
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    • pp.707-712
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    • 1995
  • Grain boundary diffusion plays significant role in the fission gas release, which is one of the crucial processes dominating nuclear fuel performance. Gaseous fission products such as Xe and Kr generated inside fuel pellet have to diffuse in the lattice and in the grain boundary before they reach open space in the fuel rod. In the mean time, the grains in the fuel pellet grow and shrink according to grain growth kinetics, especially at elevated temperature at which nuclear reactors are operating. Thus the boundary movement ascribed to the grain growth greatly influences the fission gas release rate by lengthening or shortening the lattice diffusion distance, which is the rate limiting step. Sweeping fission gases by the moving boundary contributes to the increment of the fission gas release as well. Lattice and grain boundary diffusion processes in the fission gas release can be studied by 'tracer diffusion' technique, by which grain boundary diffusion can be estimated and used directly for low burn-up fission gas release analysis. However, even for tracer diffusion analysis, taking both the intragranular grain growth and the diffusion processes simultaneously into consideration is not easy. Only a few models accounting for the both processes are available and mostly handle them numerically. Numerical solutions are limited in the practical use. Here in this paper, an approximate analytical solution of the lattice and stationary grain boundary diffusion in a polycrystalline solid is developed for the tracer diffusion techniques. This short closed-form solution is compared to available exact and numerical solutions and turns out to be acceptably accurate. It can be applied to the theoretical modeling and the experimental analysis, especially PIE (post irradiation examination), of low burn up fission. gas release.

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Grain Size Dependence of Ionic Conductivity of Polycrystalline Doped Ceria

  • Hong, Seong-Jae
    • The Korean Journal of Ceramics
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    • v.4 no.2
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    • pp.122-127
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    • 1998
  • Conductivities of polycrystalline ceria doped with several rare earth oxides were measured by AC admittance and DC four probe method. The conductions were separated into grain and grain boundary contributions using the complex admittance technique as well as grain size dependence of conductivity. The grain size dependence of polycrystalline conductivity, which can be adequately described by the so-called brick layer model, appears to give a more reliable measure of the grain conductivity compared to the complex admittance method. Polycrystalline resistivity(1/conductivity) increases linearly with the reciprocal of grain size. The intercept of resistivity vs. inverse grain size plot gives a measure of the grain resistivity and the slope gives a measure of the grain boundary resistivity. It was also noted that errors involved in the analysis of experimental data may be different between the complex admittance method and the impedance method. A greater resolution of the spectra was found in the complex admittance method, insofar as the present work is concerned, suggesting that the commonly used equivalent circuit may require re-evaluation.

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Molecular Theory of Plastic Deformation (I). Theory (소성변형의 분자론 (제1보). 이론)

  • Kim Chang Hong;Ree Taikyue
    • Journal of the Korean Chemical Society
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    • v.21 no.5
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    • pp.330-338
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    • 1977
  • In order to elucidate the plastic deformation of solids, the following assumptions were made: (1) the plastic deformation of solids is classified into two main types, the one which is caused by dislocation movement and the other caused by grain boundary movement, each movement being restricted on a different shear surface, (2) the dislocation movement is expressed by a mechanical model of a parallel connection of various kinds of Maxwell dislocation flow units whereas the grain boundary movement is also expressed by a parallel connection of various kinds of Maxwell grain boundary flow units; the parallel connection in each type of movements indicates that all the flow units on each shear surface flow with the same shear rate, (3) the latter model for grain boundary movement is connected in series to the former for dislocation movement, this means physically that the applied stress distributes homogeneously in the flow system while the total strain rate distributes heterogeneously on the two types of shear planes (dislocation or grain boundary shear plane), (4) the movement of dislocation flow units and grain boundary units becomes possible when the atoms or molecules near the obstacles, which hinder the movement of flow units, diffuse away from the obstacles.Using the above assumptions in conjunction with the theory of rate processes, generalized equations of shear stress and shear rate for plastic deformation were derived. In this paper, four cases important in practice were considered.ted N${\cdot}{\cdot}{\cdot}$O hydrogen bond and the second of two normal N${\cdot}{\cdot}{\cdot}$O hydrogen bonds, both of which exist between the amino group and the perchlorate, groups. A p-phenylenediamine group is approximately planar within an experimental error and bonded to twelve perchlorates: ten perchlorates forming hydrogen bonds and two being contacted with the van der Waals forces. A perchlorate group is surrounded by six p-phenylenediamines and four perchlorates; among the six p-phenylenediamines, five of them are hydrogen-bonded, and the rest contacted with the van der Waals force.

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