• 제목/요약/키워드: Graded electrode

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High Transparent, High Mobility MoO3 Intergraded InZnO Films for Use as a Transparent Anode in Organic Solar cells

  • Kim, Hyo-Jung;Kang, Sin-Bi;Na, Seok-In;Kim, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.343-343
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    • 2014
  • We reported on the electrical, optical, structural and morphological properties fabricated by co-sputtering for use as an anode for organic solar cells (OSCs). By adjusting RF and DC power of $MoO_3$ and IZO targets during co-sputtering, we fabricated the $MoO_3$-IZO electrode with graded content of the $MoO_3$ on the IZO films. At optimized $MoO_3$ thickness of 20 nm, the $MoO_3$ graded IZO electrode showed a higher mobility ($33cm^2/V-Sec$) than directly deposited $MoO_3$ on IZO film ($26cm^2/V-Sec$). At visible range (400nm~800nm), optical transmittance of the $MoO_3$ graded IZO electrode is higher than that of directly deposited $MoO_3$ on IZO film. High mobility of $MoO_3$ graded on IZO is attributed to less interface scattering between $MoO_3$ and IZO. To investigate the feasibility of $MoO_3$ graded IZO films, we fabricated conventional P3HT:PCBM based OSCs with $MoO_3$ graded IZO as a function of MoO3 thickness. The OSC fabricated on the $MoO_3$ graded IZO anode showed a fill factor of 66.53%, a short circuit current of $8.121mA/cm^2$, an open circuit voltage of 0.592 V, and a power conversion efficiency of 3.2% comparable to OSC fabricated on ITO anode and higher than directly deposited $MoO_3$ on IZO film. We suggested possible mechanism to explain the high performance of OSCs with a $MoO_3$ graded IZO.

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Effect of MoO3 Thickness on the Electrical, Optical, and structural Properties of MoO3 Graded ITO Anodes for PEDOT:PSS-free Organic Solar Cells

  • Lee, Hye-Min;Kim, Seok-Soon;Chung, Kwun-Bum;Kim, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.478.1-478.1
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    • 2014
  • We investigated $MoO_3$ graded ITO electrodes for organic solar cells (OSCs) without PEDOT:PSS buffer layer. The effect of $MoO_3$ thickness on the electrical, optical, and structural properties of $MoO_3$ graded ITO anodes prepared by RF/DC magnetron co-sputtering system using $MoO_3$ and ITO targets was investigated. At optimized conditions, we obtained $MoO_3$ graded ITO electrodes with a low sheet resistance of 13 Ohm/square, a high optical transmittance of 83% and a work function of 4.92 eV, comparable to conventional ITO films. Due to the existence of $MoO_3$ on the ITO electrodes, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer successfully operated. Although OSCs fabricated on ITO anode without buffer layer showed a low power conversion efficiency of 1.249%, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer showed a outstanding cell performance of 2.545%. OSCs fabricated on the $MoO_3$ graded ITO electrodes exhibited a fill factor of 61.275%, a short circuit current of 7.439 mA/cm2, an open circuit voltage of 0.554 V, and a power conversion efficiency of 2.545%. Therefore, $MoO_3$ graded ITO electrodes can be considered a promising transparent electrode for cost efficient and reliable OSCs because it could eliminate the use of acidic PEDOT:PSS buffer layer.

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Shape Optimization of a Permittivity Graded Solid Insulator in a Gas Insulated Switchgear (가스절연 개폐장치에서 유전율 구배를 갖는 고체 절연물의 형상 최적화)

  • Ju, Heugn-Jin;Kim, Dong-Kyue;Ko, Kwang-Cheol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.6
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    • pp.467-473
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    • 2012
  • A functionally graded material (FGM) spacer, which the distribution of dielectric permittivity inside an insulator changes spatially, can considerably reduce the electric field concentration around a high-voltage electrode and along the gas-insulator interface when compared to a conventional spacer with a uniform permittivity distribution. In this research, we propose the FGM spacer with an elliptical permittivity distribution instead of that with a distribution of dielectric permittivity varying along a radial direction only in order to improve efficiently the insulation capability. The optimal design of the elliptical FGM spacer configuration is performed by using the response surface methodology (RSM) combined with the steepest descent method (SDM).

Optimization of micro structure of solid oxide fuel cell electrode (고체산화물 연료전지 변수 조사 및 전극미세구조 최적화)

  • Jo, Dong Hyun;Chun, Jeong Hwan;Park, Ki Tae;Hwang, Ji Won;Kim, Sung Hyun
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.11a
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    • pp.71.2-71.2
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    • 2010
  • 고체산화물연료전지는 청정에너지원으로써 기존의 발전방식을 대신할 차세대 에너지원으로 각광 받고 있다. 고체산화물 연료전지는 고온에서 작동하는 특성상 실험을 통하여 전극미세구조 및 구동조건을 최적화하는 것은 매우 어렵다. 본 연구는 전기화학식을 이용한 전산모사를 통해서 고체산화물 연료전지의 구동조건에 따른 성능 평가 및 전극의 미세구조 최적화 과정을 수행하였다. 전극 내 전달현상을 무시하고 오직 전기화학반응만을 고려한 전산모사는 단전지의 전극미세구조 및 구동조건에 따른 전지성능을 빠르게 예측할 수 있으며, 이를 기반으로 다양한 조건에서 얻은 전지 성능 데이터를 통해 전극미세구조를 최적화하였다. 개회로전압, 활성화분극, 저항분극, 물질수송손실을 표현하기 위하여 Nernst 식, Butler-Voler 식, 옴의 법칙, dusty-gas 모델을 각각 사용하였으며, 전극미세구조 및 구동조건의 변화는 물질확산계수 및 교환전류밀도를 통하여 그 영향이 전지성능에 반영된다. 온도, 압력, 주입 연료의 조성에 대한 성능평가가 수행되었으며, 1023K, 1 bar의 조건하에서 최적의 단전지 성능을 위한 기공도와 기공크기를 조사하였다. 더 향상된 단전지 성능 확보를 위해서 실험에서 쓰이는 기능층(functional layer)과 유사하게 넓은 반응 면적과 원활한 반응물 및 생성물의 이동을 보장하도록 기공도 및 기공크기를 그레이딩한 전극구조(graded-electrode)를 디자인하고 성능을 평가하였다. 그 결과 기존의 전지구조 대신에 그레이딩된 전극을 사용할 경우 50%이상 향상된 전지성능을 예측할 수 있었다.

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Design and fabrication of millimeter-wave GaAs Gunn diodes (밀리미터파 GaAs 건 다이오드의 설계 및 제작)

  • Kim, Mi-Ra;Lee, Seong-Dae;Chae, Yeon-Sik;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.8
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    • pp.45-51
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    • 2007
  • We designed and fabricated the planar graded-gap injector GaAs Gm diodes with $1.6{\mu}m$ active length for operation at 94 GHz. The fabrication of the Gunn diode is based on MESA etching, Ohmic metalization, and overlay metalization. The measured negative resistance characteristics of the graded-gap injector GaAs Gunn diodes are examined for two different device structures changing the distance between the cathode and the anode electrodes. Also, we discuss the DC results under the forward and the reverse biases concerning the role of the graded-gap injector. It is shown that the structure having the shorter distance between the cathode and the anode electrode has higher peak current, higher breakdown voltage, and lower threshold voltage than those of the larger distance.

Enhanced Performance of La0.6Sr0.4Co0.2Fe0.8O3-\delta (LSCF) Cathodes with Graded Microstructure Fabricated by Tape Casting

  • Nie, Lifang;Liu, Ze;Liu, Mingfei;Yang, Lei;Zhang, Yujun;Liu, Meilin
    • Journal of Electrochemical Science and Technology
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    • v.1 no.1
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    • pp.50-56
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    • 2010
  • $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ (LSCF) powders with different particle sizes, synthesized through a citrate complexation method and a gel-casting technique, are used to fabricate porous LSCF cathodes with graded microstructures via tape casting. To create porous electrodes with desired porosity and pore structures, graphite and starch are used as pore former for different layers of the graded cathode. Examination of the microstructures of the as-prepared LSCF cathode using an SEM revealed that both grain size and porosity changed gradually from the catalytically active layer (near the electrodeelectrolyte interface) to the current collection layer (near the electrode-interconnect interface). Impedance analysis showed that a 3-layer LSCF cathode with graded microstructures exhibited much-improved performance compared to that of a single-layer LSCF cathode, corresponding to interfacial resistance of 0.053, 0.11, and 0.27 $\Omega{\cdot}cm^2$ at 800, 750, and $700^{\circ}C$ respectively.

Modelling of the Electrochemical Performance of Functionally Graded Fuel Cell Electrodes by Discrete Simulations

  • Schneider, L.C.R.;Martin, C.L.;Bultel, Y.;Kapelski, G.;Bouvard, D.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.916-917
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    • 2006
  • Solid Oxide Fuel Cell technology uses powder processes to produce electrodes with residual porosity by partially sintering a mixture of electronically and ionically conducting particles. We model porous fuel cell electrodes with 3D packings of monosized spherical particles. These packings are created by numerical sintering. Each particle-particle contact is characteristic for an ionic, electronic or electrochemical resistance. The numerical packing is then discretized into a resistor network which is solved by using Kirchhoff's current law to evaluate the electrode's electrochemical performance. We investigate in particular percolation effects in functionally graded electrodes as compared to other types of electrodes.

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Effect of Electrode Diameter on Pine Ceramic Pattern Formed by Using Pin-To-Pin Type Electro-Hydrodynamic Printing (핀-핀 형 전극의 전기-수력학 프린팅에서 전극 직경이 미세 세라믹 패턴 형성에 미치는 영향)

  • Lee Dae-Young;Yu Jae-Hun;Yu Tae-U;Hwang Jungho;Kim Yong-Jun
    • Transactions of the Society of Information Storage Systems
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    • v.1 no.1
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    • pp.108-114
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    • 2005
  • The generation of fine relics of suspensions is a significant interest as it holds the key to the fabrication of electronic devices. These processes offer opportunities for miniaturization of multilayer circuits, for production of functionally graded materials, ordered composites and far small complex-shaped components. Some novel printing methods of depositing ceramic and metal droplets were suggested in recent years. In an electro-hydrodynamic printing, the metallic capillary nozzle can be raised to several kilovolts with respect to the infinite ground plate or pin-type electrode positioned a few millimeters from the nozzle tip. Depending on the electrical and physical properties of the liquid, for a given geometry, it Is possible to generate droplets in any one of three modes, dripping, cone-jet and multi-jet. In this experiment, an alumina suspension flowing through a nozzle was subjected to electro-hydrodynamic printing using pin-type electrodes in the cone-jet mode at different applied voltages. The pin-type electrodes of 1, 100, 1000${\mu}m$ in diameter were used to form fine ceramic patterns onto the substrates. Various feature sizes with applied voltages and electrode diameters were measured. The feature sizes increased with the electrode diameter and applied voltages. The feature size was as fine as $30 {\mu}m$.

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A Study on the prevention of edge effect reducing dielectric strength (절연내력에 미치는 주변효과의 방지에 관한 연구)

  • Kwak, Hee-Ro;Shin, Hee-Yong
    • Proceedings of the KIEE Conference
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    • 1987.11a
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    • pp.267-271
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    • 1987
  • The test cell for preventing the edge effect reducing the intrinsic breakdown strength of polypropylene film and measuring the intrinsic breakdown strength of the film was developed. The new approach was to develope an electrode system with an edge region which is carefully graded over an extended distance. The new test arrangement employed a central circular electrode at high voltage and a set of nine concentric surrounding rings each controlled in potential by external grading resistors to be at decreasing potentials from that at the center in 10% increments. Two different size structures using the same basic principle were tried and were both found to be successful. The test electrodes were manufactured using standard printed circuit technology and were chosen to be copper on high dielectric constant GIO board.

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Fabrication of the Hihg Power SiGe Heterojunction Bipolar Transistors using APCVD (상압 화학 기상 증착기를 이용한 고출력 SiGe HBT제작)

  • 한태현;이수민;조덕호;염병령
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.26-28
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    • 1996
  • A high power SiGe HBT has been fabricated using APCVD(Atmospheric Pressure Chemical Vapor Deposition) and its perfermanoe has been analysed. The composition of Ge in the SiGe base was graded from 0% at the emitter-base junction to 20% at the base-collector junction. As a base electrode, titanium disilicide(TiSi$_2$) was used to reduce the extrinsic base resistance. The SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0GHz and a maximun oscillation frequency(f$_{max}$) of 16.1GHz with a pad de-embedding. The packaged high power SiGe HBT with an emitter area of 2xBx80${\mu}{\textrm}{m}$$^2$typically shows a cutoff frequency of 4.7GHz and a maximun oscillation frequency of 7.1GHz at Ic of 115mA.A.A.

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