• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2001.05a
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• pp.250-253
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• 2001

Mechanical properties of gold bonding wire for VLSI packaging have been studied. The diameters of gold wires are about 20-30 micrometer and fracture loads are 8-20 gram force. The elastic modulus, yield strength, fracture strength and elongation properties have been evaluated by micro-tensile test method. This work discusses for an appropriate selection of micro-force testing system and grip design in mim testing. The best method to determine gauge length of wire and to measure tensile properties has been proposed. The mechanical properties such as strength and elastic modulus of current gold bonding wire are higher than pure those of gold wire.

• Conservation Science in Museum
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• v.17
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• pp.17-42
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• 2016

A scientific analysis was performed on the gold belt with eight dangling ornaments discovered in the large Silla period Seobongchong Tomb. The object's gold sheets, nails, curved ornaments and gold wire were analyzed separately. Results show that all the components are gold-silver alloy, each varying in overall alloy composition. Gold sheets of two different gold contents are used for the belt, 17-18K gold and 19-20K gold, this seemingly by design. Nails are 20K gold, while the curved ornaments and gold wire of the belt are mostly 18K gold. Gold sheets for the dangling ornaments are mainly of 17-19K gold. Connecting rings used in the dangling ornaments are 17-19K gold, nails 17-20K gold and the curved ornaments and wire 19K gold.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2006.06a
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• pp.108-111
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• 2006

Recently, mobile information devices, such as cellular phone, PDA(Personal Digital Assistant, PDA) are getting smaller and thinner. Accordingly, ultra precision welding technology is required to manufacture the high performance system for use in the telecommunication industry. In this study, we propose the laser micro welding process. Using ytterbium fiber laser, a wide range of experiments have been carried out for the gold wire-to-gold thin film welding.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.47-52
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• 2013

Gold wire has long been used as a proven method of connecting a silicon die to a substrate in wide variety of package types, delivering high yield and productivity. However, with the high price of gold, the semiconductor packaging industry has been implementing an alternate wire material. These materials may include silver (Ag) or copper (Cu) alloys as an alternative to save material cost and maintain electrical performance. This paper will analyze and compare the electrical characteristics of several wire types. For the study, typical 0.6 mil, 0.8 mil and 1.0 mil diameter wires were selected from various alloy types (2N gold, Palladium (Pd) coated/doped copper, 88% and 96% silver) as well as respective pure metallic wires for comparison. Each wire model was validated by comparing it to electromagnetic simulation results and measurement data. Measurements from the implemented test boards were done using a vector network analyzer (VNA) and probe station setup. The test board layout consisted of three parts: 1. Analysis of the diameter, length and material characteristic of each wire; 2. Comparison between a microstrip line and the wire to microstrip line transition; and 3. Analysis of the wire's cross-talk. These areas will be discussed in detail along with all the extracted results from each type the wire.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.221-224
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• 2001

In this paper, the bonding wire interconnection has been studied from the points of view of modeling and electrical characterization. The bonding wire is measured by TDR(Time Domain Reflectometry) and Network analyzer(1-10㎓). First, one gold bonding wire mounted on 2mm gap substrate measured 3.68nH by TDR and 3.39nH by Network analyzer(6㎓). Two gold bonding wire mounted on 2mm gap substrate measured 3.14nH by TDR and 2.80nH by Network analyzer. This result presented that inductance of bonding wire could be employed as inductors for radio frequency circuit packaging.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.393-397
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• 2008

Inductively coupled plasma atomic emission spectrometry (ICP-AES) was used to determine the presence of germanium and phosphorus in a pure gold bonding wire. The samples were dissolved with hydrobromic acid and nitric acid at room temperature. The quantitation limits were 0.012 mg L-1 at 265.118 nm for Ge and 0.009 mg L-1 at 177.495 nm for P. Using the mixed acid digestion formula of DIW+HBr+HNO3, the recoveries were in the range of 98-100% and the relative standard deviation was within 1.1-2.3%. On the other hand, the amount of Ge decreased by about 16.2% using DIW+HCl+HNO3, due to the formation of a volatile compound. The Ge contents determined using the external method and the standard addition method were 9.45 mg kg-1 and 9.24 mg kg-1, respectively, and the P contents, using the same methods, were 22.49 mg kg-1 and 23.09 mg kg-1, respectively. Both methods were successfully used to determine the trace amounts of P and Ge in the pure gold bonding wire samples.

• Laser Solutions
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• v.10 no.2
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• pp.25-28
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• 2007

Rapidity and flexibility are very important in the electronic components industry. The laser process provides the industry with more rapidity and flexibility. For this reason, the laser process is considered as an acceptable method in terms of rapidity and flexibility. In this study, a wide range of experiments have been carried out on the gold wire-to-nickel thin film joining using the continuous wave fiber laser. In particular, changes in the shape of joint depending on the changes of a target point have been observed.

• Rapid Communication in Photoscience
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• v.2 no.3
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• pp.79-81
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• 2013

A novel method of fabricating polythiophene-gold nanoparticle composite film electrodes for photoelectric conversion is demonstrated. The method includes electrodeposition of gold and electropolymerization of 2,2'-bithiophene onto an indium-tin-oxide (ITO) electrode. First, electrodeposition of gold onto the ITO electrode was carried out with various repetition times of pulsed applied potential (0.25 s at -2.0 V vs. Ag/AgCl) in an aqueous solution of $HAuCl_4$. Significant progress of the number density of deposited gold nanoparticles was confirmed from scanning electron micrographs, from 4 (1 time) to 25% (15 times). Next, electropolymerization of 2,2'-bithiophene onto the above ITO electrode was performed under controlled charge condition (+1.4 V vs. Ag wire, 15 $mC/cm^2$). Structural characterization of as-fabricated films were carried out by spectroscopic and electron micrographic methods. Photocurrent responses from the sample film electrodes were investigated in the presence of electron acceptors (methyl viologen and oxygen). Photocurrent intensities increased with increasing the density of deposited gold nanoparticles up to ~10%, and tended to decrease above it. It suggests that the surplus gold nanoparticles exhibit quenching effects rather than enhancement effects based on localized electric fields induced by surface plasmon resonance of the deposited gold nanoparticles.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.714-719
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• 1996

For the fabrication of the circuits, contact or terminal areas are usually coated with nickel and gold. Usually, diluted palladium solution is applied to initiate electroless nickel plating on the copper circuits. However, the trace amounts of palladium remains on the resin and it causes the extraneous deposition. We confirmed that selectivity was greatly improved by the treatment with the strong reducing agents such as SBH or DMAB. Bondability was greatly influenced by the contents of phosphorus in the deposited nickel. Stabilizers in the electroless gold plating were also influenced the bonding strength. The baths containing cupferron or potassium nickel cyanide as a stabilizer showed superior bondability. The gold deposits having strong orientation with Au(220) and Au(311) showed good bond ability.

• Journal of the Korean institute of surface engineering
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• v.25 no.6
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• pp.309-317
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• 1992

Evaluation of electroplated gold has been carried out to obtain the data base for electrical, mechanical and environmental properties for telecommunication component applications. Gold plating was performed to a various thickness of $0.1\mu\textrm{m}$ to 1.$25\mu\textrm{m}$ after Ni plating of $3\mu\textrm{m}$ on C52100 bronze. Electrical properties were evaluated by measuring contact resistance using 4-wire method under static contact and dynamic contact during wear. Reciprocating wear test was performed to study the wear behavior as well as failure of gold contacts. Environmental characteristics were evaluated by using salt spray testing and SO2 test. Hardness of soft gold film was measured to be 53KHN under 5g load. Friction coefficient was initially obtained to be 0.15 and 0.25 under 100g and 200g loads respectively, and then raised up to 0.8 with increasing reciprocating wear cycles. Static contact resistance was 2 to 3m$\Omega$ regardless of gold film thickness while drastic changes of contact resistance were occured upon stripping of the gold film during wear. The lifetime of contact wear showing stable contact resistance increased up to 6 times for $1\mu\textrm{m}$ thickness compared to that of$ 0.1\mu\textrm{m}$ thickness under 100g load. All gold plating appeared to be stable under salt atmosphere while only the gold plating over 1$\mu\textrm{m}$ was stable under SO2 atmosphere.