• Journal of the Korean Society for Precision Engineering
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• v.27 no.6
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• pp.32-38
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• 2010

Laser material processing technology is adopted in several industry as alternative process which could overcome weakness and problems of present adopted process, especially semiconductor and display industry. In semiconductor industry, laser photo lithography is doing at front-end level, and cutting, drilling, and marking technology for both wafer and EMC mold package is adopted. Laser cleaning and de-flashing are new rising technology. There are 3 kinds of main display industry which use laser technology - TFT LCD, AMOLED, Touch screen. Laser glass cutting, laser marking, laser direct patterning, laser annealing, laser repairing, laser frit sealing are major application in display industry.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.168-168
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.181-181
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• 2009

전자부품용 Pb-free sealing frit의 열팽창계수를 기판에 matching 시키기 위하여 음의 열팽창계수를 가지고 있는 $\beta$-Eucryptite, $\beta$-Spodumene를 합성하여 filler로 첨가하였다. 합성된 filler는 저온소성용 유리프리트의 높은 열팽창계수를 조절하기 용이하고, 유리프리트와 복합화 하여 소성하면 낮은 열팽창계수로 인한 우수한 열충격 저항성을 갖는다. Filler로써 $\beta$-Eucryptite, $\beta$-Spodumene의 결정성을 향상시키기 위해 $1250^{\circ}C$에서 5 시간 동안 유지하는 합성공정을 3회 반복 진행한 후 XRD를 사용하여 결정성을 분석하였고, TMA를 이용하여 filler 첨가량에 따른 유리프리트의 열팽장계수의 변화를 측정하였다. 또한, filler 입도와 함량에 따른 melting 특성을 분석하기 위해 Pill test를 진행하였으며, soda-lime glass 기판과의 접합면을 SEM을 사용하여 관찰하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1245-1247
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• 2005

Glass frit was selected to be a $Bi_2O_3-RO-R_2O_3$ system as a sealing material to replace the current PbO system in PDP. Fillers such as a zircon, cordierite and ${\beta}-eucryptite$ were added for the control of thermal expansion coefficient (CTE), flowability and strength for sealing. At $450-500^{\circ}C$, reaction of frit and filler and interface were evaluated by a flow button test and SEM observation. The composite (frit and filler) showed CTE in the range of 70-83 x $10^{-7}/K$ and flowability of 14-20mm. It can be a candidate for the replacement of PbO system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.335-335
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• 2010

$SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $ZrO_2$, $Bi_2O_3$를 이용하여 성질이 다른 두 종류의 무연계 프릿트를 제조하여 특성을 표준화 하였고, 이들 무연계 프릿트를 이용하여 Ag계 도체 및 $RuO_2$계 저항페이스트롤 제조하여 특성에 미치는 프릿트 조성의 영향을 연구하였다. $B_2O_3$를 첨가하여 퍼짐특성이 큰 프릿트의 경우 더 우수한 페이스트 특성을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.278-278
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• 2007

Ag conductive thick film has been used in bus and address electrodes of PDP (Plasma display panel). In PDP fabrication, the firing temperature of electrode is normally $550{\sim}580^{\circ}C$. For the application of PDP industry, we investigated an Ag conductive thick film with firing temperature. Low melting glass frit was used in the conductive thick film. The thermal properties of Ag and frit were determined by a hot stage microscopy. Based on the our results, we suggest that the Ag conductive thick film should be considered of the firing temperature which is correlated to the shrinkage, conductivity, and shape of thick film.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.711-716
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• 2005

The effects of change in the component of bonding materials in carbon nanotube cathode (CNT-cathode) on field enhancement and field emission characteristics were investigated. The field enhancement factor$\beta$ was dependent on the electrical conductivity of the bonding materials. The use of frit glass as a bonding material showed a higher field enhancement factor and better field emission characteristics than an Ag paste. The reason for why the frit glass showed better field emission characteristics can be summarized as follows. First, a frit glass improves the real aspect ratio of CNTs compared to an Ag paste. Second, the number of CNTs in CNT-cathodes is considerably reduced because the CNTs were extensively oxidized during $390^{\circ}C$ heat treatment in air atmosphere in the case of Ag paste.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.525-529
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• 1999

The influence of ambient gases on field emission performance of Mo-field emitter array(FEA) in the frit-sealing step of field emission display(FED) packaging process was investigated. Mo-tip FEA was mounted on the glass substrate having a surrounded frit(Ferro FX11-137) and fired at $415^{\circ}C$ in the ambient gases of air, $N_2$ and Ar. The Ar gas was proved to be most proper ambient among the used gases through evaluating the turn-on voltage and field emission current of the fired Mo-tip FEA devices. It was confirmed that the Mo surface fired in Ar ambient was less oxidized when compared with another ones annealed in air and Ar ambient by the AFM, XPS, AES and SIMS analysis. Finally, the 3.5 inch-sized Mo-tip FED, which was packaged using frit-sealing process in the Ar ambient, was proposed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.524-530
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• 2006

$xCa(Li_{1/4}Nb_{3/4})O_{3}-(1-x)CaTiO_{3}$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to low-temperature co-fired ceramic(LTCC) technology. The addition of $5{\sim}15wt%$ ZBS glass ensured successful sintering below $900\;^{\circ}C$. In general, increased addition of ZBS glass increased sinterability but it decreased the quality factor($Q{\times}f_{0}$) significantly due to the formation of an excessive liquid and second phases. As for the addition of $CaTiO_3$, the dielectric constant(${\epsilon}_r$) and temperature coefficient of resonant frequency(${\tau}_f$) increased, while the quality factor($Q{\times}f_{0}$) did not show an apparent change. The sintered $0.9Ca(Li_{1/4}Nb_{3/4})O_{3}-0.1CaTiO_{3}$ specimen at $900\;^{\circ}C$ with 10 wt% ZBS glass demonstrated 39.6 in dielectric constant(${\epsilon}_r$), 4,400 in quality factor$(Q{\times}f_{0}),\;and\;-11ppm/^{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.12
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• pp.28-32
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• 2015

In this work, we reported fabrication of sealing the glass substrate using laser treatment at low temperature for electrochemical luminescence (ECL) cell. The laser treatment at temperature is using laser diode. The glass substrate sealing by laser treatment tested at 3-10W, 2-5 mm/s for build and tested. The sealing laser treatment method will allow associate coordination between the two glass substrate was enclosed. The effect of laser treatment to sealing the glass substrate was found to have cracks and air gap at best thickness of about 550-600 im for condition 3 W, 3 mm/s. The surface of sealing was roughness which was not influent to electrodes It can reduce the cracks, crevices and air gaps as well, improves the performance viscosity in butter bus bar electrodes. Therefore, it is more effective viscosity between two FTO glasses substrate.