• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권6호
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• pp.297-301
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• 2006

In the present work, we investigate the characteristics of new composition material, chalcogenide $Ge_1Se_1Te_2$ material in order to overcome the problems of conventional PRAM devices. The Tc of $Ge_1Se_1Te_2$ bulk was measured $231.503^{\circ}C$ with DSC analysis. For static DC test mode, at low voltage, two different resistances are observed. depending on the crystalline state of the phase-change resistor. In the first sweep, the as-deposited amorphous $Ge_1Se_1Te_2$ showed very high resistance. However when it reached the threshold voltage(about 11.8 V), the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The phase transition between the low conductive amorphous state and the high conductive crystal]me state was caused by the set and reset pulses respectively which fed through electrical signal. Set pulse has 4.3 V. 200 ns. then sample resistance is $80\sim100{\Omega}$. Reset pulse has 8.6 V 80 ns, then the sample resistance is $50{\sim}100K{\Omega}$. For such high resistance ratio of $R_{reset}/R_{set}$, we can expect high sensing margin reading the recorded data. We have confirmed that phase change properties of $Ge_1Se_1Te_2$ materials are closely related with the structure through the experiment of self-heating layers.

• 한국생산제조학회지
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• 제23권2호
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• pp.133-137
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• 2014

The recent development of electro-optic devices and anticorrosion media has made it necessary investigate infrared optical systems with solid-solid interfaces of materials with amorphous characteristics. One of the most promising classes of materials for these purposes seems to be chalcogenide glasses, which are based on the Ge_Sb_Se system, have drawn much attention because of their use in preparing optical lenses and fibers that are transparent in the range of 3-12 um. In this study, a standard melt-quenching technique was used to prepare amorphous Ge_Sb_Sechalcogenideto be used in the design and manufacture of infrared optical products. The results of structural, optical, and surface roughness analyses of high purity Ge_Sb_Sechalcogenide glasses after various annealing processes reported.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.982-987
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• 2011

In this study, $Ge_8Se_{(2+x)}Te_{(6-x)}$ thin film amorphous-to-crystalline phase-change rate was evaluated in using a nano-pulse scanner. The focused laser beam with a diameter <10 ${\mu}m$ was illuminated in the power (P) and pulse duration (t) ranges of 1-31 mW and 10-460 ns, respectively, with subsequent detection of the responsive signals reflected from the film surface. We also evaluated the material characteristics, such as optical absorption and energy gap, crystalline phases, and sheet resistance of as-deposited and annealed films. The result of experiments showed that the thermal stability of the Ge-Se-Te film is largely improved by adding Se.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.329-333
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• 2012

For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Sb/Ge-Se-Te thin films are fabricated and irradiated with UV light source to investigate a reversible phase change by Sb-doped condition. Because of Sb atoms, the Sb inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.73-76
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• 1992

The amorphous phase of bulk and thin film in the As-Se-S-Ge system was observed by X-ray diffraction. Thermal analysis using DSC, DTA and TGA method has been used for the determination of the glass transition temperature, Tg. The glass transition temperature, Tg for the composition were $238^{\circ}C$ in $As_{40}Se_{15}S_{35}Ge_{10}$ and $231^{\circ}C$ in $AS_{40}Se_{25}S_{25}Ge_{10}$ and $As_{40}Se_{50}Ge_{10}$. The phase seperation of continuous phase and dispersive phase was observed by the optical texture of the polarizing microscope. Also, the glass transition temperature of the thin film was near $200^{\circ}C$. As the results of SEM-EDS analysis, the phase transition of the films by thermal treatment and light illumination was the amorphous to amorphous.

• 한국세라믹학회지
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• 제37권3호
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• pp.219-226
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• 2000

Amorphous Ge20As20Se60 chalcogenide thin films were prepared by spin coating technique from mixed solutions of As40Se60 and Ge40Se60 dissolved in ethylenediamine. Films were prepared at a roating speed of 3500 rpm and spinning time was 10 second and heat-treateed at 27$0^{\circ}C$ for 1 hour. The resulting film thickness and RMS roughness were approximately 340 nm and 15$\AA$. Photostructure changes were investigated with 514.5nm Ar+ laser irradiation and heat-treatment. After Ar+ laser irradiation, transmittance and transmission efficiency decreased respectively up to 24.9% at 2.43 eV and 67.5% at 3.27 eV, and absorption edge shifted toward long wavelength. Optical bandgap changed from 2.03 to 1.83 eV, and absoprtion coefficient and absorption efficiency increased up to 0.33$\times$105cm-1 at 3.37eV and 88.3% at 1.31 eV, respectively. These photodarkening state were recovered reversibly by heat-treatment at 27$0^{\circ}C$ for 1 hour. Photodarkening and thermal bleaching effects by laser irradiation and heat-treatment revealed reversible amorphous-to-amorphous transition varying only coordination number.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.5-9
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• 1996

As optical massmemories, (Se, S)-based chalcogenide amorphous films are used for a holographic supermicrofiche by using the refractive-index change. In 1000$\AA$thick-As$_{40}$ Ge$_{10}$Se$_{100-x}$S$_{x}$(x=0.25, 35at.%), the amount of refractive index change $\Delta$n reaches 0.01~0.53 at 6328, 7800$\AA$ by exposing for 15minutes plue-pass filtered mercury lamp(~4300$\AA$) and annealing 20$0^{\circ}C$. And in initially annealed As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$, photodarkening(PD) and thermalbleaching(TB) was founded.ded.B) was founded.d.

• 대한디지털의료영상학회논문지
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• 제9권2호
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• pp.31-38
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• 2007

To evaluate the accuracy and extent in the localization of cerebral motor coutex activation using a gradient- echo echo planar imaging(GE-EPI) compared to spin-echo echo planar iimaging(SE-EPI) on 3T MR imaging. Functional MR imaging of cerebral motor cortex activation was examined in GE-EPI and SE-EPI in five healthy male volunteers. A right finger movement was accomplished with a paradigm of 6 task and rest, periods and the cross-correlation was used for a statistical mapping algorithm. We evaluated any sorts of differenced of the time seried and the signal intensity changes between the rest and task periods obtained with two technoques. The qualitative analysis was distributed with activation sites of large veins and small veins by using two techniques and was found that both the techniques were clinically uesful for delineating large veins and small veins in fMRL Signal intensity charge of the rest and activation periods provided simmilar activations in both methods(GE-EPI : 0.93$\pm$0.11, SE-EPI : 0.80$\pm$.015) but the signal intensity in GE-EPI(133.95$\pm$15.76) was larger than in SE-EPI(74.5$\pm$18.90). The average SNRs of EPI raw data were higher at SMA in SE-EPI(48.54$\pm$12.37) than GE-EPI(41.4$\pm$12.54) and at M1 in SE-EPI(43.24$\pm$11.77) than GE-EPI(38.27$\pm$6.53). The localization of activation voxels of the GE-EPI showed a larger vein but the SE-EPI generally showed small vein. Then the analysis results of the two techniques were used for a statistacal paired student t-test. SE-EPI was found clinically useful for localizing the cerebral moter cortex cativation on 3.0T, but showed a little different activation patterns comparad to GE-EPI. In conclusion, SE-EPI may be feasible and can detect true cortical activation from capillaries and GE-EPI can obtain the large veins in the motor cortex activation on 3T MR imaging.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.78.2-78.2
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• 2012

최근 PRAM의 집적도 향상 및 3차원 적층에 의한 메모리 용량 향상을 위해 셀 선택 스위치로서 박막형 Ovonic Threshold Switching (OTS) 소자를 적용한 Cross bar 구조의 PRAM이 제안된 바 있다. OTS 소자는 비정질 칼코지나이드를 핵심층으로 하는 2단자 소자로서 고저항의 Off 상태에 특정 값 (문턱스위칭 전압) 이상의 전압을 가해주면 저저항의 On 상태로 바뀌고 다시 특정 값 (유지전압) 이하로 전압을 감소시킴에 따라 고저항의 Off 상태로 복원하는 특성을 갖는다. 셀 선택용 스위치로 적용되기 위해서는 핵심적으로 On-Off 상태간의 가역적인 변화 중에도 재료가 비정질 구조를 안정하게 유지해야 하며 전기적으로는 Off 상탱의 저항이 크고 또한 전류값의 점멸비가 커야 한다. GeSe는 이원계 재료로서 단수한 구성에도 불구하고 OTS 소자가 갖추어야할 기본적인 특성을 가지는 것으로 알려져 있다. 본 연구에서는 GeSe로 구성된 OTS 재료에 경원소인 질소를 첨가하여 비정질 상태의 안정성과 소자특성의 개선 효과를 조사하였다. RF-puttering 시 Ar과 $N_2$의 혼합 Gas를 사용하여 조성이 $Ge_{62}Se_{38}$ ($N_2$ : 3%)인 박막을 제작하여 DSC를 통해 결정화온도(Tx)를 확인하였고, $N_2$ gas의 함유량이 각각 1 %, 2 %, 3 %인 $Ge_{62}Se_{38}$인 박막을 전극의 접촉 부 면적이 $10{\times}10\;{\mu}m^2$인 cross-bar 구조의 소자로 제작하여 Threshold switching voltage ($V_{th}$), Delay time ($t_d$), $I_{on}/I_{off}$ 그리고 Endurance 특성을 평가하였다. DSC 분석 결과 $N_2$ 가 3 % 첨가된 GeSe 박막은 Tx가 $371^{\circ}C$에서 $399^{\circ}C$로 증가되었다. $N_2$가 1% 첨가된 GeSe 소자를 측정한 결과 $V_{th}$의 변화 없는 가운데 $I_{on}/I_{off}$이 약 $2{\times}10^3$에서 $5{\times}10^4$로 향상되었다. Endurance 특성 역시 $10^4$에서 $10^5$번으로 향상되었다. $t_d$의 경우 비정질 상태의 저항 증가로 인해 약 50% 증가되었다. 이러한 $N_2$의 첨가로 인한 비정질 GeSe 박막의 변화 원인에 대한 분석 결과를 소개할 예정이다.

• 한국세라믹학회지
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• 제32권12호
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• pp.1424-1432
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• 1995

Chalcogenide glasses having IR (8~12${\mu}{\textrm}{m}$) transmittance were prepared and their densities, thermal and mechanical properties, IR-transmittances and chemical durabilities were determined. Glass transition temperatures (Tg) of Ge-As-Se, Ge-As-Se-Te and Ge-SE-Te system glasses were in the range of 280~3$65^{\circ}C$, 210~236$^{\circ}C$ and 210~26$0^{\circ}C$, respectively. Crystallization temperature (Tc) of Ge-Se-Te system glass was in the range of 305~40$0^{\circ}C$. Their thermal expansion coefficients($\alpha$) were in the range of 11.7~15.2$\times$10-6/K, 15.4~16.0$\times$10-6/K and 17.4~27.8$\times$10-6/K, respectively. Their MOR, hardness and fracture toughness were in the range of 15.2~18.6MPa, 36.1~58.2Kg/$\textrm{mm}^2$, 1.0~1.3 MPa.mm1/2, 18.9~24.9 MPa, 40.9~65.1Kg/$\textrm{mm}^2$, 1.3~1.5 MPa.mm1/2, and 24.1~30.8 MPa, 40.9~86.0Kg/$\textrm{mm}^2$, 1.4~1.8 MPa.mm1/2, respectively. IR transmittance of Ge-Se-Te system glass was about 60%. Ge-O extrinsic absorption peaks at 8, 12 ${\mu}{\textrm}{m}$ were significantly eliminated by the addition of Mg. Chemical durabilities in deionizied water of Ge-Se-Te system glass were good and IR-transmittances decreased with leaching time and temperature.