• Title/Summary/Keyword: GeSe

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Ge-Se 이원계 화합물을 이용한 ReRAM 스위칭 특성 분석에 관한 연구

  • Nam, Gi-Hyeon;Kim, Jang-Han;Jeong, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.137-137
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    • 2011

  • Programmable Metallization Cell (PMC) is a ReRAM device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using Ag+ ions which play an electrolyte ions role. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

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Polarization Holographic Grating Formation and Diffraction Efficiency Measurement in Amorphous Chalcogenide Thin Films (비정질 칼코게나이드 박막에서의 편광 홀로그라피 격자 형성 및 회절효율 측정)

  • 전진영;여철호;이현용;정홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.89-92
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    • 1998

  • Amorphous chalcogenide thin films, especially a-(Se, S) based films, exhibit a number of photoinduced phenomena not observed in other types of amorphous thin films. The polarization holographic grating has been formed in amorphous As-Ge-Se-S thin films using two linearly polarized He-Ne laser light. In addition, dffraction efficiency has been measured by the same laser of a relative lower intensity at the same time.

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The Measurement on Diffraction Efficiency in Polarization Holography using Amorphous Chalcogenide Thin Films (칼코게나이드 박막을 이용한 편광 홀로그래픽의 회절효율 측정)

  • 장선주;여철호;이현용;정홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.87-90
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    • 1999

  • The dependence of diffraction efficiency as a funct~on of film thickness and incident angle has been investigated in amorphous chalcogenide thin films, which act as a polarization holographic materials. Especially a-(Se, S) based films exhibit a number of photoinduced phenomena not observed in other types of amorphous thin films. Holographic gratings in amorphous As-Ge-Se-S thin films have been formed using the mutual perpendicular polarized(linearly) He-Ne laser light. We could obtain the optimum condition to get high diffraction efficiency.

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A study on physical and chemical properties of chalcogenides for an aspheric lens (비구면 렌즈의 설계 및 제조를 위한 칼코게나이드계 유리의 물리적 화학적 특성 연구)

  • Ko, Jun-Bin;Kim, Jeong-Ho
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.19 no.3
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    • pp.388-393
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    • 2010

  • In recent years the research has been focused on the preparation of special glasses, i.e., chalcogenide and heavy metal oxide ones that can transmit optical radiation above 2 um and also other optical parameters exceed those of silica based glasses. The attention in this paper is focused on chalcogenide glasses, on preparation of high quality base glass, for an application in infrared optical product design and manufacture. The amorphous materials of As-Se and Ge-As-Se chalcogenides were prepared by a standard melt-quenching technique. The compositions were mesaured by ICP-AES and EPMA, and structural and thermal properties were studied through various annealing processes. Several anomalies of glass transition and crystallization were observed in the DSC/DTA/TG results of the chalcogenide glass.

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Temperature dependence of optical energy gaps and thermodynamic function of $Zn_{4}SnSe_{6}$ and $Zn_{4}SnSe_{6}:Co^{2+}$ single crystals ($Zn_{4}SnSe_{6}$ 및 $Zn_{4}SnSe_{6}:Co^{2+}$ 단결정에서 광학적 에너지 띠 및 열역학적 함수의 온도의존성 연구)

  • Kim, D.T.;Kim, N.O.;Choi, Y.I.;Kim, B.C.;Kim, H.G.;Hyun, S.C.;Kim, B.I.;Song, C.I.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.08a
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    • pp.25-30
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    • 2002

  • The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

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