• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.34-37
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• 2004

Amorphous chalcogenide thin films, especially a-(Se, S) based films, exhibit a number of photo-induced phenomena. In this study, we make the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag thin film and then we measure the holographic diffraction efficiency according to thickness of Ag. And we form the two-dimensional holographic grating. At first, we formed one-dimensional grating and then we form two-dimensional grating by rotate the sample. We found out the most suitable thickness of Ag and in case of As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag(600${\AA}$), the diffraction efficiency was more higher than other samples. The holographic grating was formed by He-Ne laser(λ=632.8nm). The intensity of incident beam was 2.5mW and incident angle was 20$^{\circ}$. We confirm. the two-dimensional holographic grating by the pattern of diffracted beam and AFM(Atomic Force Microscope) image. We perform the etching process using by 0.26N NaOH in order to confirm clearly two-dimensional grating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.20-23
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• 1988

Effect of light irradiation on evaporated chalcogenide glass films of an As-Se-S-Ge system has been studied. Utiling this characteristics diffraction grating of the amorphous film was obtained. Parameters such as film thickness, composition, and exporsure time influencing the diffraction efficiency were also studied. The maximum value of the diffraction efficiency achieved was 4.6% in an $As_{75}Se_{15}S_{35}-Ge_{10}$ film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.976-979
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• 2003

In this study, we formed the 2-dimensional holographic grating in order to mamufactured 2-dimensional photonic crystal in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ and $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film which have the excellent optical sensetivity using by He-Ne laser(632.8nm). The intensity of incident beam was 2.5mW and incident angle that $2{\theta}$ is $20^{\circ}$. We formed the holographic grating after had formed the 1-dimansional holographic grating and then rotate the sample. We confirmed that 2-dimensional holographic grating result of the figure of diffracted beam and AFM(Atomic Forced Microcopy) image.

• Korean Journal of Materials Research
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• v.32 no.12
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• pp.515-521
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• 2022

Various types of optical materials and devices used in special environments must satisfy durability and optical properties. In order to improve the durability of zinc sulfide multispectral (MS ZnS) substrates with transmission wavelengths from visible to infrared, Ge-Sb-Se-based chalcogenide glass was used as a sealing material to bond the MS ZnS substrates. Wetting tests of the Ge-Sb-Se-based chalcogenide glass were conducted to analyze flowability as a function of temperature, by considering the glass transition temperature (T_g) and softening temperature (T_s). In the wetting test, the viscous flow of the chalcogenide glass sample was analyzed according to the temperature. After placing the chalcogenide glass disk between MS ZnS substrates (20 × 30 mm), the sealing test was performed at a temperature of 485 ℃ for 60 min. Notably, it was found that the Ge-Sb-Se-based chalcogenide glass sealed the MS ZnS substrates well. After the MS ZnS substrates were sealed with chalcogenide glass, they showed a transmission of 55 % over 3~12 ㎛. The tensile strength of the sealed MS ZnS substrates with Ge-Sb-Se-based chalcogenide glass was analyzed by applying a maximum load of about 240 N, confirming its suitability as a sealing material in the far infrared range.

• Koreanishche Zeitschrift fur Deutsche Sprachwissenschaft
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• v.3
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• pp.211-231
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• 2001

Es gibt verschiedene Auffassungen $\"{u}ber$ die Formulierung der Ableitung, wobei nur die Suffixbildung als Ableitung einerseits gelten soll oder andererseits die Suffix- und $Pr\"{a}fixbildung$ zusammen als Ableitung gelten sollen. Hier wird die zweite Auffassung als Ableitung angesehen und danach $geh\"{o}rt$ auch die Zirkumfixbildung zur Ableitung. Das einzige Zirkumfix, mit dem die Substantive abgeleitet werden, ist ge-+-e und dessen Suffix kann gegebenenfalls nicht explizit $ausgedr\"{u}ckt$ werden. Diese Substantivableitung wird zuerst nach der Wortart der Basis und dann nach der Funktion oder Bedeutung $folgenderma{\ss}en$ klassifiziert: 1. Deverbale Substantive: 1) Abstrakta: Gefecht, $Ger\"{a}usch,\;Gest\"{o}ber$ - Wiederholung bzw. Dauer: $Gedr\"{o}hn$, Gekreisch, $Get\"{o}se$ - Pejorative Bewertung: Gejammer, Gerede, Geschreibe 2) Resultat bzw.Produkt: $Gem\"{a}lde$, Gewebe, Gewucher 3) Person bzw. Sache: $Gedr\"{a}nge,\;Gew\"{a}chs,\;Ger\"{o}ll$ 4) Instrumentalia: $Gebl\"{a}se,\;Gefa{\ss}$, Gestell b) Denominale Substantive: Kollektiva: Gehim, $Gel\"{a}nde$, Gerippe

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.369-369
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• 2010

Adsorption and ordering of methionine molecules on Ge(100) surface have been studied using high resolution photoemission spectroscopy and low-energy electron diffraction (LEED) to investigate the adsorption structure as a function of coverage. Analysis of C 1s, S 2p, N 1s, and O 1s core levels reveals quite different according to methionine coverage. We found that the relative population of the two types of thiolates induces a structural change in the ordering from $2\;{\times}\;1$ to $1\;{\times}\;1$. Such an unusual evolution of the methionine adsorption on the Ge(100) surface is discussed in relation to chemical reactions and possible molecular rearrangement on the surface.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.79.1-79.1
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.231.2-231
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• 2003

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.855-862
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• 1996

The nucleation and the crystal growth rates of Ge-Se-Te chalcogenide glass by two step heat-treatment and its effect on the mechanical optical properties and water-resistance were determined. The maximum nuclea-tion and crystal growth rate were 2.1$\times$103/mm3 .min at 28$0^{\circ}C$ and 0.4${\mu}{\textrm}{m}$/min at 33$0^{\circ}C$ respectively. When the crystal volume fraction with crystal size $1.5mutextrm{m}$ was about 4% the (hardness and fracture toughness were about 117kg/mm2 and 6.0 MPa.mm1/2)respectively. The weight loss of crystallized glass in water was lower than parent glass($25^{\circ}C$ for 32 hrs : 0.03% 8$0^{\circ}C$ for 16 hrs : 0.1%) as 0.01% at $25^{\circ}C$, 0.03% at 8$0^{\circ}C$ for 16 hrs : 0.1%) at $25^{\circ}C$ 0.03% at 8$0^{\circ}C$ respectively. The IR-transmittance decreased with increasing crystal size and crystal volume fraction. The IR-transmittance of crystallized glass with the crystal size of $1.5mutextrm{m}$ (crystal volume fraction : 4%) presented 56% which was about 4% lower than that of parent glass.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1029-1032
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• 2004

This paper investigates that how diffraction efficiency is going to change according to amorphous As-Ge-Se-S. We made films such as $\lambda$, $\lambda/2$, $\lambda/4$, $\lambda/8$ on the basis of 633nm, which is wavelength of recording laser(He-Ne). Among them, $\lambda/4$ has the highest diffraction efficiency value, while $\lambda/8$ has the lowest. The experiment shows that the highest diffraction efficiency value of $\lambda/4$ is about 0.09%, whereas diffraction efficiency of $\lambda/8$ is formed, which is merely close to 0%.