Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The characteristic of diffraction efficiency depending on the thickness of amorphous AsGeSeS

비정질 AsGeSeS 박막의 두께에 따른 회절효율 특성

  • Lee, Ki-Nam (Department of Electronic Materials Engineering of Kwangwoon Unil) ;
  • Yeo, Cheol-Ho (Department of Electronic Materials Engineering of Kwangwoon Unil) ;
  • Kim, Jong-Bin (Division of Electronics and Information and Communication Engineering of Chosun Uni.) ;
  • Lee, Yeong-Jong ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering of Kwangwoon Unil)
  • 이기남 (광운대학교 전자재료공학과) ;
  • 여철호 (광운대학교 전자재료공학과) ;
  • 김종빈 (조선대학교 전자공학과) ;
  • ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2004.07.05
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Abstract

This paper investigates that how diffraction efficiency is going to change according to amorphous As-Ge-Se-S. We made films such as $\lambda$, $\lambda/2$, $\lambda/4$, $\lambda/8$ on the basis of 633nm, which is wavelength of recording laser(He-Ne). Among them, $\lambda/4$ has the highest diffraction efficiency value, while $\lambda/8$ has the lowest. The experiment shows that the highest diffraction efficiency value of $\lambda/4$ is about 0.09%, whereas diffraction efficiency of $\lambda/8$ is formed, which is merely close to 0%.

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