• Title/Summary/Keyword: GeO

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Formation of Ferromagnetic Ge3Mn5 Phase in MBE-grown Polycrystalline Ge1-xMnx Thin Films (다결정 Ge1-xMnx 박막에서 Ge3Mn5 상의 형성과 특성)

  • Lim, Hyeong-Kyu;Anh, Tran Thi Lan;Yu, Sang-Soo;Baek, Kui-Jong;Ihm, Young-Eon;Kim, Do-Jin;Kim, Hyo-Jin;Kim, Chang-Soo
    • Journal of the Korean Magnetics Society
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    • v.19 no.3
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    • pp.85-88
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    • 2009
  • Magnetic phases of polycrystalline $Ge_{1-x}Mn_x$ thin films were studied. The $Ge_{1-x}Mn_x$ thin films were grown at $400^{\circ}C$ by using a molecular beam epitaxy. The $Ge_{1-x}Mn_x$thin films were p-type and electrical resistivities were $4.0{\times}10^{-2}{\sim}1.5{\times}10^{-4}ohm-cm$. Based on the analysis of magnetic characteristics and microstructures, it was concluded that the ferromagnetic phase formed on the $Ge_{1-x}Mn_x/SiO_2$/Si(100) thin films was $Ge_3Mn_5$ phase which has about 310 K of Curie temperature. Moreover, the $Ge_{1-x}Mn_x$ thin film which had $Ge_3Mn_5$ phase showed the negative magnetoresistance to be about 9% at 20 K when the magnetic field of 9 T was applied.

Mossbauer Studies of $Cu_{0.95}Ge_{0.95}Fe_{0.1}O_3$ (Mossbauer 분광법에 의한 $Cu_{0.95}Ge_{0.95}Fe_{0.1}O_3$의 연구)

  • 채광표;권우현;이영배
    • Journal of the Korean Magnetics Society
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    • v.10 no.1
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    • pp.16-21
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    • 2000
  • Magnetic properties and crystallographic properties of $Cu_{0.95}Ge_{0.95}Fe_{0.1}O_3$ were studied by using x-ray diffraction, superconducting quantum interference device (SQUID) and Mossbauer spectroscopy. Our sample has orthorhombic structure and the lattice constants are a = 4.795 $\AA$, b = 8.472 $\AA$, c = 2.932 $\AA$. The spin-Peierls (SP) transition temperatures of our sample is 13 K. The Mossbauer spectra consisted with two Zeeman sextets and one doublet due to $Fe^{3+}$ions. The Zeeman sextets come from tetrahedral $Fe^{3+}$ions and the doublets come from octahedral $Fe^{3+}$ions. The jump up of magnetic hyperfine field of 2nd Zeeman sextet and the increasing of the values of quadrupole splitting and isomer shift of doublet below SP transition temperature could be interpreted related with the atomic displacements. The N el temperature is 715 K, the Debye temperature are 540 K for octahedral site and 380 K for tetrahedral site, respectively.

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Effect of partial sintering of silicate soots on refractive index of the silcate glass films deposited by FHD Process (FHD 공정으로 Si wafer에 증착된 silicate soot의 부분 소결 처리가 굴절률 변화에 미치는 영향)

  • 유성우;정우영;백운출;한원택
    • Proceedings of the Optical Society of Korea Conference
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    • 2002.07a
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    • pp.46-47
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    • 2002
  • Flame Hydrolysis Deposition (FHD) 공정은 SiC1$_4$, GeCl$_4$, POC1$_3$, BCl$_3$ 등의 원료를 사용하여 Si wafer 및 유리기판 위에 silicate soot를 증착하는 방법이며, 증착된 soot는 고온에서 소결과정을 거쳐 B$_2$O$_3$-P$_2$O$_{5}$ -GeO$_2$-SiO$_2$(BPGS)계 유리막으로 형성된다. 유리막의 굴절률은 SiC1$_4$, GeCl$_4$, POC1$_3$, BCl$_3$ 등의 원료 유량을 조절하여 변화가능하며 이를 이용하여 광도파로를 제작할 수 있다 특히 광통신에 사용할 수 있는 광증폭기 등의 능동형 광소자 제작을 위해서는 FHD공정을 통해 형성된 soot에 Er$^{3+}$ 등의 희토류 원소를 첨가하여야 한다. (중략)

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Evolution of stokes pulses of stimulated Raman scattering in a CeO$_2$-doped multimode fiber (GeO$_2$ 첨가 다중모드 광파이버에서 유도라만산란에 의한 스토크스 펄스 발생)

  • Yi, Yong-Woo;Hwang, In-Duck
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.6 no.7
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    • pp.1095-1099
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    • 2002
  • We experimentally investigate the evolution of nanosecond Stokes pulses in a single-pass Raman laser pumped by a Q-switched Nd:YAG laser at 1064 na As a Raman medium, a GeO2-doped graded-index multimode fiber ot 220 m long Is used. We demonstrate that efficient generation of several Stokes components with 1.5∼2.7 nanosecond pulsewidth is obtained by varying the input pump energy.

Electrical characteristics of MOS capacitors with Ge nanocrystals embedded in high-k materials (고유전체 박막에 형성된 Ge 나노크리스탈을 이용한 MOS 커패시터의 전기적 특성)

  • Yun, Jeong-Gwon;Lee, Hye-Ryoung;Park, Byoung-Jun;Cho, Kyoung-Ah;Kim, Sang-Sig
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1351-1352
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    • 2007
  • $ZrO_2$$HfO_2$ 박막에 이온 주입을 거친 후 열처리 과정을 통해 Ge 나노입자를 형성시켜 MOS 커패시터를 제작하였다. C-V 곡선에서는 반시계 방향의 hysteresis가 관찰되었으며, $ZrO_2$ MOS 커패시터에서는 -9 V에서 9 V까지 전압변화를 주었을 때 3 V 정도의 메모리 윈도우가 나타남을 확인 할 수 있었다. 또한, $HfO_2$ MOS 커패시터에서는 -10 V에서 10 V까지 전압변화를 주었을 때 3.45 V의 메모리 윈도우를 관찰 할 수 있었다.

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Adsorption Selectivities between Hydroxypyridine and Pyridone Adsorbed on the Ge(100) Surface

  • Lee, Myungjin;Lee, Hangil
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.137-137
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    • 2013
  • The most stable adsorption structures and their corresponding energies of 4-pyridone, 4-hydroxypyridine, 2-pyridone and 2-hydroxypyridine have been investigated by Density Functional Theory (DFT) calculation method and high-resolution photoemission spectroscopy (HRPES). We confirmed that between the two reaction centers of 4- and 2-pyridone, only O atom of carbonyl functional group can act as a Lewis base and thus, O dative bonding structure is the most stable. On the other hand, we clarified that both the two reaction centers (the cyclic N atom and the O atom of hydroxyl functional group) of 4- and 2-hydroxypyridine (tautomers of 4- and 2-pyridone) can successfully function as a Lewis base. Through the interpretation of the N 1s and O 1s core level spectra obtained using HRPES, we could confirm the electronic structures and bonding configurations of these molecules with a coverage dependence on the Ge(100) surface.

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Optimization of Submerged Culture Conditions for the Growth Increase of Ginseng Adventitious Root Containing Germanium (게르마늄 함유 인삼 부정근의 생장 증대를 위한 액체배양 조건의 최적화)

  • Chang, Eun-lung;Oh, Roon-II
    • Journal of Ginseng Research
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    • v.33 no.2
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    • pp.143-148
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    • 2009
  • This study was carried out to detennine the optimal submerged culture conditions for the growth increase of ginseng adventitious roots containing germanium by means of a fractional factorial design with four factors and three levels, using the response surface methodology (RSM). The ginseng (Panax ginseng CA. Meyer) adventitious roots were induced by plant growth regulators and cultured in a liquid SH medium. The effects of various $GeO_2$ and phosphoric acid ($H_3P0_4$) concentrations in the medium, $GeO_2$ addition time and the pH of the medium on the fresh weight of the ginseng adventitious roots were investigated. The optimum pH of the medium and the phosphoric acid concentration detennined by the partial differentiation of the model equation were 4.7 and 6.0 roM, respectively. The predicted optimal $GeO_2$ concentration was 10 ppm and the $GeO_2$ addition time did not affect the growth of ginseng adventitious roots. Under these conditions, the growth of the ginseng adventitious root containing germanium was predicted to be 2.47 g.

Fabrication of Core-Sheath Nanocomposite Fibers by Co-axial Electrospinning (공축 전기방사를 이용한 Core-Sheath형 복합나노섬유의 제조)

  • Kang, Minjung;Lee, Seungsin
    • Journal of the Korean Society of Clothing and Textiles
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    • v.37 no.2
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    • pp.224-234
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    • 2013
  • This study investigates the fabrication of core-sheath nanocomposite fibers by locating germanium (Ge) and silicon dioxide ($SiO_2$) nanoparticles selectively in the sheath layer by co-axial electrospinning. Co-axially spun fibers were prepared by electrospinning a pure PVA solution and Ge/$SiO_2$/PVA solution as the core and sheath layer, respectively. Core-sheath nanocomposite fibers were electrospun under a variety of conditions that include various feed rates for the core and sheath solutions, voltages, and concentric needle diameters, in order to find an optimum spinning condition. Ge/$SiO_2$ nanocomposite fibers were also prepared by uniaxial electrospinning to compare fiber morphology and nanoparticle distribution with core-sheath nanofibers. Using scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray analysis, it was demonstrated that the co-axial approach resulted in the presence of nanoparticles near the surface region of the fibers compared to the overall distribution obtained for uni-axial fibers. The co-axially electrospun Ge/$SiO_2$/PVA nanofiber webs have possible uses in high efficiency functional textiles in which the nanoparticles located in the sheath region provide enhanced functionality.

$Si_2H_6$$GeH_4 $가스를 이용한 LPCVD $Si_{1-x}Ge_x$ 합금 박막의 제작

  • 김진원;류명관;김기범;김상주
    • Journal of the Korean Vacuum Society
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    • v.4 no.S1
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    • pp.178-184
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    • 1995
  • SiO2 위에 as-dep. 비정질 Si1-xGex 합금박막을 증착하기 위하여 Si2H6 와 GeH4 가스를 사용한 저압 화학 기상증착(LPCVD)에 관하여 연구하였다. 증착온도는 $400-500^{\circ}C$였으며, 공정압력은 0.5-1Torr 였다. 박막내의 Ge 함량은 온도 및 증착가스의 유량이 일정하면 공정압력이 증가함에 따라 증가하였고, 공정압력 및 증착가스의 유량이 일정하면 증착온도에 관계없이 일정하였다. 일정한 Si2H6가스의 표면반응은 박막내의 Ge 원자에 의해 촉진됨을 알 수 있었다. 조성이 일정한 Si1-xGex 박막의 증착속도는 증착온도 증가에 따라 Arrhenius 형태로 증가하여, Si, Si0.84Ge0.16,Si0.69Ge0.31박막증착의 활성화에너지는 각각 1.5, 1.13, 1 eV로서 박막내의 Ge함량이 증가함에 따라 활성화 에너지는 감소하였다.

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