• Journal of Radiation Protection and Research
• /
• 제34권2호
• /
• pp.83-86
• /
• 2009

The single crystal scintillator of bismuth germinate ($Bi_4Ge_3O_{12}$:BGO) was successfully grown by the conventional Czochraski technique. The characteristics of the grown BGO were evaluated and presented on the excitation, emission responses and energy spectra of the $\gamma$-rays from $^{241}Am$, $^{133}Ba$, $^{57}Co$, $^{22}Na$, $^{137}Cs$ and $^{54}Mn$ radio-isotopes. The energy resolution of grown BGO, $\Delta$E/E, was estimated to be 12.1% at 662 keV of $\gamma$-ray for $^{137}Cs$ nuclide. Compared to the commercial BGO crystal, we confirmed that the grown BGO has a good performance and is comparable to reference one.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.175-178
• /
• 1998

LiMn$_2$O$_4$-based spinels has been studied extensively as positive electrode materials for rechargeable lithium and lithium ion batteries. We describe here that LiMn$_2$O$_4$ cathode active materials is preparated by sol-gel process using water as solvent, which often yields inorganic oxides of excellent phase purity and well-controlled stoichiometry. Using this process, it has been possible to synthesize phase-pure crystalline spinel LiMn$_2$O$_4$ by calcining the appropriate precursors in air at 80$0^{\circ}C$ for several hours. The influence of different time have also been explored. LiMn$_2$O$_4$ preparated in the present study exhibit the single phase of cubic and active reaction at 400 ~ $600^{\circ}C$. Electrochemical studies show that the this method- synthesized materials appear to present reversible oxidation and reduction reactions at 3.0V ~ 4.5V and cycle stability during 50 cycle.

• Nuclear Engineering and Technology
• /
• 제52권11호
• /
• pp.2613-2619
• /
• 2020

This work investigated the gamma-ray shielding performance, and the physical and mechanical properties of poly (methyl methacrylate) (PMMA) composites embedded with 0-44.0 wt% bismuth trioxide (Bi₂O₃) fabricated by the fast ultraviolet (UV) curing method. The results showed that the addition of Bi₂O₃ had significantly improved the gamma shielding ability of PMMA composites. Mass attenuation coefficient and half-value layer were examined using five gamma sources (Cs-137, Ba-133, Cd-109, Co-57, and Co-60). The high loading of Bi₂O₃ in the PMMA samples improved the micro-hardness to nearly seven times that of the pure PMMA. With these enhancements, it was demonstrated that PMMA/Bi₂O₃ composites are promising gamma shielding materials. Furthermore, the fast UV curing exerts its great potential in significantly shortening the production cycle of shielding material to enable rapid manufacturing.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
• /
• pp.1438-1439
• /
• 2006

$Ge_{2}Sb_{2}Te_5$(GST) thin film at present is a promising candidate for a phase change random access memory (PCRAM) based on the difference in resistivity between the crystalline and amorphous phase. PCRAM is an easy to manufacture, low cost storage technology with a high storage density. Therefore today several major chip in manufacturers are investigating this data storage technique. Recently, A. Pirovano et al. showed that PCRAM can be safely scaled down to the 65 nm technology node. G. T Jeonget al. suggested that physical limit of PRAM scaling will be around 10 nm node. Etching process of GST thin ra films below 100 nm range becomes more challenging. However, not much information is available in this area. In this work, we report on a parametric study of ICP etching of GST thin films in $Cl_2$/Ar chemistry. The etching characteristics of $Ge_{2}Sb_{2}Te_5$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2$/Ar gas mixture. The etch rate of the GST films increased with increasing $Cl_2$ flow rate, source and bias powers, and pressure. The selectivity of GST over the $SiO_2$ films was higher than 10:1. X-ray photoelectron spectroscopy(XPS) was performed to examine the chemical species present in the etched surface of GST thin films. XPS results showed that the etch rate-determining element among the Ge, Sb, and Te was Te in the $Cl_2$/Ar plasma.

• 정보저장시스템학회논문집
• /
• 제3권3호
• /
• pp.123-125
• /
• 2007

We report the readout stability improvement results of super-resolution near field structure (Super-RENS) writeonce read-many (WORM) disk at a blue laser optical system. (Laser wavelength 405nm, numerical aperture 0.85) By using diffusion barrier structure (GeSbTe sandwiched by GeN) and high transition temperature recording material ($BaTiO_3$), material diffusion of phase change layer and recording mark degradation were greatly improved during high power (Pr=2.0mW) readout process up to $1{\times}10^5$ times.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.280-281
• /
• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Bulletin of the Korean Chemical Society
• /
• 제15권1호
• /
• pp.57-63
• /
• 1994

Digital simulation program for one-dimensional geometric systems of electrochemical phenomena was developed. The accuracy of the digital simulation is discussed by comparing with the known solutions. Applying this program to the linear sweep voltammetry at a planar electrode for the electrode reaction, 0 + ne${\to}$R, the accurate current functions for the reversible and totally irreversible charge transfer systems were obtained. Comparing these current functions with the simulated voltammograms for various other values of ${\alpha}$ (0.1 to 1.0) and ${\Lambda}\;(10^{-5}\;to\;10^5)$, the revised zones that are different from those proposed by Matsuda and Ayabe for the reversible and totally irreversible systems are proposed. For ${\alpha}{\ge}$0.1 the reversible zone is in ${\Lambda}{\ge}10^{1.7}$ and the totally irreversible zone is in ${\Lambda}{\le}10^{-1.7}$, where ${\Lambda}=k^{\circ}/ [D_o^{1-{\alpha}}D_R^{\alpha}(nF/RT)v]^{1/2}$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.1181-1184
• /
• 2008

$GeO_2$/ormosil organic-inorganic hybrid films doped with neodymium ions and $TiO_2$/Ormosil organic-inorganic hybrid films dispersed with neodymium oxide nanocrystals are prepared by combining an inverse microemulsion technique and a low-temperature sol-gel technique. The effects of $Nd^{3+}$ concentration, $Nd_2O_3$ nanocrystal content, and heat treatment temperature on up-conversion and photoluminescence luminescence properties of the hybrid films are studied.

• 한국결정학회:학술대회논문집
• /
• 한국결정학회 2007년도 추계학술연구발표회 및 정기총회
• /
• pp.49-49
• /
• 2007

• 한국세라믹학회지
• /
• 제22권6호
• /
• pp.71-79
• /
• 1985

In order to fabricate the translucent electrooptic ceramics which are comparable to PLZT, $PNZT^*$ has been prepared from aqueous solutions of their itrate and chlorides. In the quarternary $Pb^{1-x} Nd_x(Zr_{0.63} Ti_{0.37})^{1-\frac{x}{4}O_3$, (PNZT) $(0.02\le x\ge 0.12)$ system cold-pressed PNZT slugs were sintered in $O_2$ in pt-crucible for 45 min. at 118$0^{\circ}C$ and were then heat-treated in air for 60 hrs. at 120$0^{\circ}C$ in Al2O3 crucibles containing $PbZrO_3$ powder to control the atmosphere. Mean particle size of calcined PNZT powders was 0.1~0.15${\mu}{\textrm}{m}$. It was found that the maximum value of optical transmission has been revealed at 6~8 at. % $Nd_2O_3$ added body and that their dielectric constant has been decreased as the frequency increased. Curic temperature has been varied inversely with $Nd^{3+}$ ion content up to 8 at. % and become constant above this value. $^*Pb_{1-x}Nd_x(Zr_{0.63} Ti_{0.37})_{1-2/4}O_3$