• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.407-414
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• 1996

We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the $O_2$ adsorption by terminating dangling bonds with H atoms. Moreover, the existence of Si-H bonds on Si(100) surfaces enhances the structural relaxation of Si-O-Si bonds due to a charge transfer from Si-Si back bonds. In the heteroepitaxial growth of a Si/Ge/Si(100) system, H atoms suppress the segregation of Ge atoms into Si overlayers since the exchange of Ge atoms with Si atoms bound with H must be accompanied with breaking of Si-H bonds. However, 3-dimensional island growth is also promoted by atomic H irradiation, which is considered to result from the suppression of surface migration of adsorbed reaction species and from the lowering of step energies by the H termination of dangling bonds.

• Journal of Ginseng Research
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• v.31 no.3
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• pp.154-158
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• 2007

In order to increase the content of germanium in ginseng adventitious roots, the effects of chelating agents on germanium content and root growth were investigated in the submerged cultures of ginseng adventitious roots. Chelating agents such as citric acid, oxalic acid, phosphoric acid, EDTA (Ethylenediamine tetraacetic acid) or EGTA (Ethylene glycol-bis $({\beta}-aminoethylether)-tetraacetic$ acid) were administrated in the submerged culture of ginseng root containing 50 ppm $GeO_2$. After 6 weeks of cultivation, fresh weight, germanium and saponin contents in the roots were analyzed. Among chelating agents, addition of 1.0mM phosphoric acid was found to be best for germanium accumulation. Under this condition, germanium content increased 1.4 times as compared to that of the control. The germanium content in the adventitious roots also increased with addition of EDTA or EGTA, while they inhibited the growth of ginseng adventitious root. Citric and oxalic acids were not effective for increasing germanium content in adventitious roots. As the results, it suggests that the phosphoric acid can be proved as the optimal agent for the enhancement of germanium accumulation in ginseng adventitious roots. These results can be served as a guideline for the mass production of ginseng adventitious roots containing germanium by large-scale production.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.581-586
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• 2014

The most stable adsorption structures and their corresponding energies of 4-pyridone, 4-hydroxypyridine, 2-pyridone and 2-hydroxypyridine have been investigated by Density Functional Theory (DFT) calculation and high-resolution photoemission spectroscopy (HRPES). We confirmed that between the two reaction centers of 4- and 2-pyridone, only O atom of carbonyl functional group can act as a Lewis base while both the two reaction centers of 4- and 2-hydroxypyridine (tautomers of 4- and 2-pyridone) can successfully function as a Lewis base. On the other hand, owing to their molecular structures, there is a remarkable difference between the adsorption structures of 4- and 2-hydroxypyridine. Through the analysis of the N 1s and O 1s core level spectra obtained using HRPES, we also could corroborate that two different adducts coexist on the surface at room temperature due to their activation energy investigating the coverage dependent variation of bonding configurations when these molecules are adsorbed on the Ge(100) surface.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.55.2-55
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• 1998

다견정 심리판-거l르마늄(JXlly-SiGe)은 TFT(thin-film transistor)와 갇븐 소자 응용에 있어서 중요한 불칠이다 .. LPCVD (low pressure chemical vapor deposition) 방법으로 비정칠 SiGc (a-SiGe) 박막올 증 착시키고 고상결정화(SPC: solid-phase crystallization)시켜 poly-SiGc옹 얻는 것은 잘 알려져 있다. 그러 나 그러나 PF'||'&'||'pound;VD-SPC 방법올 이용한 poly-SiGc의 제조에 대해서는 아직 두드러지게 연구된 바 없다. 우리단 PF'||'&'||'pound;VD 방법으로 a-SiGc 박막올 증착시키고 고상캘정화시켜 poly-SiGc올 얻었 R며, :~ 결정성, G Gc 농도, 결정핍의 평끌 크기 눔올 XRD (x-ray diffraction) 방법으호 조사하였다. 특히 pr'||'&'||'pound;VD 증착시 가판온도,Gc 함유량 등이 고상화에 미치는 영향에 대해서 조사하였다. P PECVD 장치는 터보펌프콸 사용하여 71저진공이 2xlOlongleftarrow5 Torr에 이르렀다. 가판윤 SiOOO) 웨이퍼륜 사용하고 기판 온도는 약 150- 35()"C 사이에서 변화되었다. 증착가스는 SiH4, GcH4, 112 등흘 썼다. 증착 압력과 r.f 전력용 각각 O.25ToIT와 3W로 일정하게 하였다 .. Gc 함유량(x)은 x x=O.O-O.5 사이에서 변화되었다 .. PECVD모 증착된 SiGc 박막들은 고상결정화를 위해 $\theta$X)"(:: Nz 분위기에서 24시간동안, 혹은 5OO'C에서 4열간 가열되었다. 고상결정화 후 poly-SiGc 박막은 SiGc(Ill), (220), (311) XRD 피크들올 보여주었으며, 각 피 크들은 poly-Si에 비하여 왼쪽으로 Bragg 각이 이동되었고, Vegard’slaw에 의해서 x의 값올 확 인할 수 있었다. 이것온 RBS 결과와 열치하였다. 약 150-350'C 사이에서 변화된 기판온도의 범위 에서 증착온도가 낮올수콕 견정립의 크기는 대체로 증가하는 것으로 나타났다 .. XHD로 추정된 형 균 결정립의 크기는 최대 약 3$\alpha$1m 정도였다. 또한 같끈 샘플뜰에 대해서 기판온도가 낮올수록 증착속도가 증가함옴 확인하였다 .. Gc 함유량이 x=O.1에서 x=O.5로 증가함에 따라서도 결정립의 크기와 SiGc 증착속도는 증가하는 것으로 나타났다 .. Hwang [1] , Kim[2] 둥의 연구자들은 Gc 함유 량이 증가함에 따라 결정 립 크기가 캄소하는 것올 보고하였으냐, Tsai [3] 둥은 반대의 결과플 보 고하고 Ge 힘유량의 증가시 결정립 크기의 증가에 대해 Gc의 Si보다 낮은 융점 (melting point) 올 강조한 바 있다. 결정립 크기의 증가는 대체로 SiGe 중착속도의 증가와도 관련이 있음올 볼 때, poly-SiGc의 경우에도 polv-Si의 고상화에서와 같이 증착속도가 빠를수록 최종적언 결정럽의 크기가 커지는 것으로 이해될 수도 있다 .. PECVD 증착시 증착속도의 증가는 증착된 박딱에서의 무켈서도를 증 가시킬 수 있음올 고려하면, 이라한 결파플온 p이y-SiGc의 고상결정화에서도 ploy-Si의 고상결정 화에서와 마찬가지로 초기 박막에서의 구조직 무절서도가 클수록, 고상결정화 후 결정 립의 크기 가 커칠 수 있음올 보여준다고 생각휠 수 있다,

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1424-1432
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• 1995

Chalcogenide glasses having IR (8~12${\mu}{\textrm}{m}$) transmittance were prepared and their densities, thermal and mechanical properties, IR-transmittances and chemical durabilities were determined. Glass transition temperatures (Tg) of Ge-As-Se, Ge-As-Se-Te and Ge-SE-Te system glasses were in the range of 280~3$65^{\circ}C$, 210~236$^{\circ}C$ and 210~26$0^{\circ}C$, respectively. Crystallization temperature (Tc) of Ge-Se-Te system glass was in the range of 305~40$0^{\circ}C$. Their thermal expansion coefficients($\alpha$) were in the range of 11.7~15.2$\times$10-6/K, 15.4~16.0$\times$10-6/K and 17.4~27.8$\times$10-6/K, respectively. Their MOR, hardness and fracture toughness were in the range of 15.2~18.6MPa, 36.1~58.2Kg/$\textrm{mm}^2$, 1.0~1.3 MPa.mm1/2, 18.9~24.9 MPa, 40.9~65.1Kg/$\textrm{mm}^2$, 1.3~1.5 MPa.mm1/2, and 24.1~30.8 MPa, 40.9~86.0Kg/$\textrm{mm}^2$, 1.4~1.8 MPa.mm1/2, respectively. IR transmittance of Ge-Se-Te system glass was about 60%. Ge-O extrinsic absorption peaks at 8, 12 ${\mu}{\textrm}{m}$ were significantly eliminated by the addition of Mg. Chemical durabilities in deionizied water of Ge-Se-Te system glass were good and IR-transmittances decreased with leaching time and temperature.

• Korean Journal of Medicinal Crop Science
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• v.3 no.1
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• pp.45-49
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• 1995

This study was carried out to examine the germanium contents of Angelica keiskei Koidz. and A. acutiloba Kitagawa and to intend to increase its contents while those leaf explants were culturing on MS medium supplemented with organic and inorganic germanium. Ge content of Agelica keiskei Koidz. was 2.1 times higher than that of A. acutiloba Kitagawa. Digestion was done quickly at high temperature, but Ge content was decreased. Callus formation of A. acutiloba Kitagawa was better than that of A. keiskei Koidz. Callus formation of both plants was good in order of pH 5.7, pH 5.4, and pH 6.0. But shoots from callus were formed frequently in A. keiskei Koidz., especially at pH 5.7. Callus formation of both plants was good up to 5 ppm of inorganic ($germanium(GeO_2),$ retarded at 10 ppm, and rarely formed at 100 ppm, but was good up to 10ppm of organic germanium retarded at 50 ppm and formed some-what even at 100 ppm.

• Korean Journal of Food Science and Technology
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• v.51 no.5
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• pp.499-502
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• 2019

Poly(ADP-ribose) polymerase (PARP) is a nuclear enzyme which is activated in response to DNA damage, and which mediates DNA repair. PARP inhibitors can be used to reduce resistance of cancer cells to anticancer treatments. The objective of this study was to investigate the effects of selected phytochemicals and fruit extracts on PARP activation in MCF-7 breast cancer cells subjected to oxidative stress. Pre-incubation with epigallocatechin gallate (EGCG), apple extract (AE), cranberry extract (CE), or grape extract (GE) for 2 hours at test concentrations reduced PARP activity induced upon treatment with hydrogen peroxide in a dose-dependent manner (p<0.05). GE was found to be the most efficient PARP inhibitor among the fruit extracts examined. These results suggest that phytochemicals of fruit extracts might be used as PARP inhibitors in order to assist anticancer agents.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.100.2-100.2
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• 2015

반도체 산업이 성장하고 기술이 향상됨에 따라 소자의 소형화가 이루어지고 있다. 공정법으로는 atomic layer deposition (ALD), chemical vapor deposition (CVD) 등이 있다. 이러한 공정을 이용하여 수십 nm까지 미세화가 진행되고 있으며, 복잡한 구조의 박막을 실현하기 위해 전구체의 개발이 활발히 진행되고 있다. 전구체의 특성을 비실시간으로 분석하는 방법으로는 질량 분석법, 가스크로마토그래피, 적외선 분광법 등이 있다. 전구체의 특성을 실시간으로 분석하기 위해 Fourier transform infrared spectroscopy (FTIR)내에 attenuated total reflectance (ATR)를 거치시켰다. 본 연구는 구조를 개선한 ATR-FTIR을 이용하여 Tris-(dimethylamino) Zirconium (CpZr) 전구체의 흡착 거동을 분석하였다. ATR용 crystal은 Ge crystal을 사용했으며, 온도를 각각 30, 40, $50^{\circ}C$에서 CpZr 전구체의 흡착특성을 연구했다. 흡착성을 증가시키기 위해 Ge crystal 표면에 $ZrO_2$나노입자를 분포시켜 흡착특성을 비교 분석하였다. 또한 CpZr 전구체가 흡착된 Ge crystal 표면에 오존가스를 주입시킨 후 변화를 관찰하였다. Ge crystal표면에 나노입자를 분포시켜 CpZr 전구체를 흡착한 결과 나노입자를 분포시키지 않았을 때 보다 흡착강도가 높게 나타났다. 또한 CpZr 전구체가 흡착된 Ge crystal 표면에 오존가스를 주입한 결과 C-H 결합이 분해됨을 확인했다.

• Korean Journal of Materials Research
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• v.33 no.10
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• pp.414-421
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• 2023

Infrared radiation (IR) refers to the region of the electromagnetic radiation spectrum where wavelengths range from about 700 nm to 1 mm. Any object with a temperature above absolute zero (0 K) radiates in the infrared region, and a material that transmits radiant energy in the range of 0.74 to 1.4 um is referred to as a near-infrared optical material. Germanate-based glass is attracting attention as a glass material for infrared optical lenses because of its simple manufacturing process. With the recent development of the glass molding press (GMP) process, thermal imaging cameras using oxide-based infrared lenses can be easily mass-produced, expanding their uses. To improve the mechanical and optical properties of commercial materials consisting of ternary systems, germanate-based heavy metal oxide glasses were prepared using a melt-cooling method. The fabricated samples were evaluated for thermal, structural, and optical properties using DSC, XRD, and XRF, respectively. To derive a composition with high glass stability for lens applications, ZnO and Sb₂O₃ were substituted at 0, 1, 2, 3, and 4 mol%. The glass with 1 mol% added Sb₂O₃ was confirmed to have the optimal conditions, with an optical transmittance of 80 % or more, a glass transition temperature of 660 ℃, a refractive index of 1.810, and a Vickers hardness of 558. The possibility of its application as an alternative infrared lens material to existing commercial materials capable of GMP processing was confirmed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.1
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• pp.1-7
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• 2006

Some lead-based crystals show excellent ferroelectric, piezoelectric or scintillation properties and have attracted much attention in recent years. However, the erosion of the high temperature solution on platinum crucible and the evaporation of PbO component are the main problems often encountered during the crystal growth. In this paper, we reported recent progress on the Bridgman growth of lead-based functional crystals, such as novel relaxor ferroelectric crystals (PZNT and PMNT), scintillation crystals $(PbWO_4,\;PbF_2\;and\;PbClF)$ and piezoelectric crystals $(Pb_5Ge_3O_{11}\;and\;Pb_2KNb_5O_{15}),$ in Shanghai Institute of Ceramics, Chinese Academy of Sciences. The vertical Bridgman method has been modified to grow PZNT crystals from high temperature solution and as-grown crystals have been characterized. Large size lead-based scintillators, $PbWO_4\;and\;PbF_2$ crystals, have been mass-produced by the vertical Bridgman method in the multi-crucible fumace. These crystals have been supplied to CERN and other laboratories for high-energy physics experiments. The Bridgman growth of piezoelectric crystals $Pb_5Ge_3O_{11}\;and\;Pb_2KNb_5O_{15}$ are discussed also.