• Korean Journal of Optics and Photonics
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• v.16 no.4
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• pp.340-344
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• 2005

Microlens cells of Ge-doped BPSG (Boro-Phospho-Silicate Glass) are fabricated by dicing the film produced by FHD (Flame Hydrolysis Deposition). Microlens arrays of $53.4{\mu}m$ square unit are produced by the thermal reflow of the diced unit cells at $1200^{\circ}C$. The gap between the microlenses was about $70{\mu}m,$ and the thickness of the produced lens was about $28.4{\mu}m$. We analyzed the reflowed shape of the microlens cell by an image-process technique, and the focal length was about $62.2{\mu}m$. This method of fabricating a microlens is simple and inexpensive compared to the conventional method using the photolithographic process. Also, the control of the radius of curvature of the microlens is easier and a more precise microlens way of various types can be fabricated using this method.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.1
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• pp.31-36
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• 2002

Low energy boron ions were implanted into the preamorphized and crystalline silicon substrates to form 0.2${\mu}m$ $p^+-n$ junctions. The rapid thermal annealing(RTA) was used to annihilate the crystal defects due to implantation and to activate the implanted boron ions, and the furnace annealing was employed to reflow the BPSG(bolo-phosphosilicate glass). The implantation conditions for Gepreamorphization were the energy of 45keV and the dose of 3$\times$1014cm-2. BF2 ions employed as a p-type dopant were implanted with the energy of 20keV and the dose of 2$\times$1015cm-2. The thermal conditions of RTA and furnace annealing were $1000^{\circ}C$/10sec and $850^{\circ}C$/40min, respectively. The junction depths were measured by SIMS and ASR techniques, and the 4-point probe was used to measure the sheet resistances. The electrical characteristics were analyzed via the leakage currents of the fabricated diodes. The single thermal processing with RTA produced shallow junctions of good qualities, and the thermal treatment sequence of furnace anneal and RTA yielded better junction characteristics than that of RTA and furnace anneal.