• Journal of Ginseng Research
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• 제29권3호
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• pp.145-151
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• 2005

식물조직배양기술을 이용하여 Ge를 함유한 인삼 root를 생산하고자, 0.5mg/L BAP와 3.0mg/L NAA조합의 식물생장 조절물질로 유도된 인삼 root를 이용하여 배양을 위한 최적 $GeO_2$농도, $GeO_2$ 첨가시기 및 배지의 pH를 조사하였다. 인삼 root의 생장에 가장 좋은 $GeO_2$ 농도는 10ppm, $GeO_2$ 첨가시기는 배양 초기(0주), pH는 5.5였고, 인삼 root내 Ge의 함량이 가장 높았을 때의 $GeO_2$농도는 100ppm이었다. $GeO_2$를 첨가하여 배양한 기간이 길수록 Ge함량이 증가하였으나 6주 이후부터 생장율이 둔화되어 $GeO_2$ 100ppm에서는 생장율이 아주 낮아 대조구의 1/2 정도였다. 배양 초기에 $GeO_2$를 첨가하여 8주간 배양한 인삼 root의 Ge 함량이 $29.4mg\%$인데 반해, 배양 2주째에 $GeO_2$를 첨가한 인삼 root의 경우는 Ge 함량이 $38.6mg\%$이므로, 배양 후 2주 후에 $GeO_2$를 첨가하는 것이 인삼 root의 Ge흡수에 더욱 효과적이었다. Ge흡수가 가장 잘 이루어지는 최적 pH는 5.5였으며 사포닌 함량은 $GeO_2$의 첨가농도가 증가할수록 감소하였다.

• 한국진공학회지
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• 제14권1호
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• pp.29-34
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• 2005

실리콘-게르마늄 바이시모스(SiGe BiCMOS) 소자 제작시 발생하는 실리콘-게르마늄 이종접합 바이폴라 트랜지스터(SiGe HBT) 열화 현상에 대하여 고찰하였다. 독립적으로 제작된 소자에 비해 SiGe BiCMOS 공정에서의 SiGe HBT소자는 얼리 전압(Early voltage), 콜렉터-에미터 항복전압 및 전류이득등의 DC특성이 열화되고 상당한 크기의 베이스 누설전류가 존재한다는 것을 알 수 있었다. 또한 AC 특성인 차단주파수(f/sub T/) 및 최대 진동주파수(f/sub max/)도 1/2이하로 현저하게 저하되는 것을 확인하였다. 이는 고온의 소오스-드레인 열처리에 의한 붕소의 농도분포 변화가 에미터-베이스 및 콜렉터-베이스 접합 위치에 변화를 주고, 결국 실리콘-게르마늄 내에서의 접합 형성이 이루어지지 않아 전류 이득이 감소하고 기생 장벽이 형성되어서 발생한 현상이다.

• 한국분말재료학회지
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• 제9권6호
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• pp.422-432
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• 2002

Mechanically driven decomposition of intermetallics during mechanical milling(MM 1 was investigated. This process for Fe-Ce and Fe-Sn system was studied using conventional XRD, DSC, magnetization and alternative current susceptibility measurements. Mechanical alloying and milling form products of the following composition (in sequence of increasing Gecontent): $\alpha$(${\alpha}_1$) bcc solid solution, $\alpha$+$\beta$-phase ($Fe_{2-x}Ge$), $\beta$-phase, $\beta$+FeGe(B20), FeGE(B20), FeGe(B20)+$FeGe_2$,$FeGe_2$,$FeGe_2$+Ge, Ge. Incongruently melting intermetallics $Fe_6Ge_5$ and $Fe_2Ge_3$ decompose under milling. $Fe_6Ge_5$ produces mixture of $\hat{a}$-phase and FeGe(B20), $Fe_2Ge_3$ produces mixture of FeGe(B20) and $FeGe_2$ phases. These facts are in good agreement with the model that implies local melting as a mechanism of new phase for-mation during medchanical alloying. Stability of FeGe(B20) phase, which is also incongruently melting compound, is explained as a result of highest density of this phase in Fe-Ge system. Under mechanical milling (MM) in planetary ball mill, FeSn intermetallic decomposes with formation $Fe_5Sn_3$ and $FeSn_2$ phases, which have the biggest density among the phases of Fe-Sn system. If decomposition degree of FeSn is relatively small(<60%), milled powder shows superparamagnetic behavior at room temperature. For this case, magnetization curves can be fitted by superposition of two Langevin functions. particle sizes for ferromagnetic $Fe_5Sn_3$ phase determined from fitting parameters are in good agreement with crystalline sizes determined from XRD data and remiain approximately chageless during MM. The decomposition of FeSn is attributed to the effects of local temperature and local pressure produced by ball collisions.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권6호
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• pp.854-859
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• 2016

Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of $250^{\circ}C$ and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.378.2-378.2
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• 2014

We have investigated optical characteristics of $p-Ge_{0.99}Sn_{0.01}$ and Ge films grown on Si substrates using photoreflectance (PR) spectroscopy. The $Ge_{0.99}Sn_{0.01}$ and Ge films were grown by using an ultra-high vacuum chemical vapor deposition and molecular beam epitaxy methods, respectively. PR spectra were measured at 25 K and an extended InGaAs detector was used. By comparing $Ge_{0.99}Sn_{0.01}/Si$ and Ge/Si spectra, we observed the signals related to direct transition and split-off band of $Ge_{0.99}Sn_{0.01}$. The transition energies of $Ge_{0.99}Sn_{0.01}$ and Ge films were approximately 0.74 and 0.84 eV, respectively. Considering the shift of split-off band transition of $Ge_{0.99}Sn_{0.01}$, we suppose that the transition at 0.74 eV is attributed to direct transition between ${\Gamma}$ band and valence band. The temperature- and excitation power-dependent PR spectra were also measured.

• 분석과학
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• 제8권3호
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• pp.371-374
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• 1995

유기게르마늄 화합물인 Ge-132의 분석법을 확립하였다. 이온교환수지 컬럼을 사용하고 $Na_2B_4O_7$ buffer를 이동상으로 하여 Ge-132를 분리한 다음, 전기전도도 검출기를 사용하여 검출하는 방법을 이용한 결과 50pmol의 농도까지 분석할 수 있었다. 이 방법은 Ge-132의 원료와 제품의 품질 관리에 응용이 가능하였다.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.267-273
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• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• ETRI Journal
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• 제25권4호
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• pp.247-252
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• 2003

This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

• Applied Science and Convergence Technology
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• 제23권1호
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• pp.40-43
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• 2014

We investigated the growth characteristics and interfacial properties of $HfO_2$ films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of $HfO_2$ grown on a $GeO_2/Ge$ substrate through ALD is similar to that grown on an $SiO_2/Si$ substrate. However, the incubation period of $HfO_2$ deposition on Ge is shorter than that on Si. The $HfO_2$ grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at $700^{\circ}C$. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.