• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• Journal of the Korean Chemical Society
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• v.45 no.6
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• pp.577-588
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• 2001

Eu doped YRO$_4$ (R=As, Nb, P, V) red phosphors were prepared by the combinatorial chemistry method. The quaternary material library of tetrahedron-type composition array was designed to investigate the luminescence of the host material under UV and VUV excitations (254, 147 nm). The photoluminescent characteristics of the samples were comparable to the commercially available red phosphors such as (Y, Gd)BO$_3$: $Eu^{3+}$ and Y$_2$O$_3$: In view of the luminescence yield, V rich region was found to be optimum under UV excitation. But the results under VUV excitation were different from those of UV excitation, the samples of the composition containing a large amount of P shows the highest luminescence. Especially, higher luminescence was obtained in $Y_{0.9}$(A$S_{0.06}$N$B_{0.06}P_{0.83}V_{0.06}$) O$_4$: $Eu_{0.1}$ phosphors than commercial (Y, Gd)BO$_3$red phosphors under 147 nm excitation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.402.1-402.1
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• 2016

The performance of solid oxide fuel cells (SOFCs) is directly related to the electrocatalytic activity of composite electrodes in which triple phase boundaries (TPBs) of metallic catalyst, oxygen ion conducting support, and gas should be three-dimensionally maximized. The distribution morphology of catalytic nanoparticle dispersed on external surfaces is of key importance for maximized TPBs. Herein in situ grown nickel nanoparticle onto the surface of fluorite oxide is demonstrated employing gadolium-nickel co-doped ceria ($Gd0.2-xNixCe0.8O2-{\delta}$, GNDC) by reductive annealing. GNDC powders were synthesized via a Pechini-type sol-gel process while maximum doping ratio of Ni into the cerium oxide was defined by X-ray diffraction. Subsequently, NiO-GNDC composite were screen printed on the both sides of yttrium-stabilized zirconia (YSZ) pellet to fabricate the symmetrical half cells. Electrochemical impedance spectroscopy (EIS) showed that the polarization resistance was decreased when it was compared to conventional Ni-GDC anode and this effect became greater at lower temperature. Ex situ microstructural analysis using scanning electron microscopy after the reductive annealing exhibited the exsolution of Ni nanoparticles on the fluorite phases. The influence of Ni contents in GNDC on polarization characteristics of anodes were examined by EIS under H2/H2O atmosphere. Finally, the addition of optimized GNDC into the anode functional layer (AFL) dramatically enhanced cell performance of anode-supported coin cells.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.372-377
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• 2018

MgO or gadolinium-doped ceria (GDC, $Ce_{0.9}Gd_{0.1}O_{2-{\delta}}$) was added as a promoter to improve the oxygen transfer kinetics of $MgMnO_3$ oxygen carrier material for chemical looping combustion. Neither MgO nor GDC reacted with $MgMnO_3$, even at the high temperature of $1100^{\circ}C$. The average oxygen transfer capacities of $MgMnO_3$, 5 wt% $MgO-MgMnO_3$, and 5 wt% $GDC-MgMnO_3$ were 8.74, 8.35, and 8.13 wt%, respectively. Although the addition of MgO or GDC decreased the oxygen transfer capacity, no further degradation was observed during their use in 5 redox cycles. The addition of GDC significantly improved the conversion rate for the reduction reaction of $MgMnO_3$ compared to the use of MgO due to an increase in the surface adsorption process of $CH_4$ via oxygen vacancies formed on the surface of GDC. On the other hand, the conversion rates for the oxidation reaction followed the order 5 wt% $GDC-MgMnO_3$ > 5 wt% $MgO-MgMnO_3$ >> $MgMnO_3$ due to morphological change. MgO or GDC particles suppressed the grain growth of the reduced $MgMnO_3$ (i.e., (Mg,Mn)O) and increased the specific surface area, thereby increasing the number of active reaction sites.

• Journal of Radiation Protection and Research
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• v.47 no.4
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• pp.214-225
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• 2022

Background: The conventional cerium-doped Gd₂Al₂Ga₃O₁₂ (GAGG(Ce)) scintillator-based gamma-ray imager has a bulky detector, which can lead to incorrect positioning of the gammaray source if the shielding against background radiation is not appropriately designed. In addition, portability is important in complex environments such as inside nuclear power plants, yet existing gamma-ray imager based on a tungsten mask tends to be weighty and therefore difficult to handle. Motivated by the need to develop a system that is not sensitive to background radiation and is portable, we changed the material of the scintillator and the coded aperture. Materials and Methods: The existing GAGG(Ce) was replaced with Bi₄Ge₃O₁₂ (BGO), a scintillator with high gamma-ray detection efficiency but low energy resolution, and replaced the tungsten (W) used in the existing coded aperture with lead (Pb). Each BGO scintillator is pixelated with 144 elements (12 × 12), and each pixel has an area of 4 mm × 4 mm and the scintillator thickness ranges from 5 to 20 mm (5, 10, and 20 mm). A coded aperture consisting of Pb with a thickness of 20 mm was applied to the BGO scintillators of all thicknesses. Results and Discussion: Spectroscopic characterization, imaging performance, and image quality evaluation revealed the 10 mm-thick BGO scintillators enabled the portable gamma-ray imager to deliver optimal performance. Although its performance is slightly inferior to that of existing GAGG(Ce)-based gamma-ray imager, the results confirmed that the manufacturing cost and the system's overall weight can be reduced. Conclusion: Despite the spectral characteristics, imaging system performance, and image quality is slightly lower than that of GAGG(Ce), the results show that BGO scintillators are preferable for gamma-ray imaging systems in terms of cost and ease of deployment, and the proposed design is well worth applying to systems intended for use in areas that do not require high precision.

• Journal of Powder Materials
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• v.30 no.5
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• pp.402-408
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• 2023

This study focused on improving the phase stability and mechanical properties of yttria-stabilized zirconia (YSZ), commonly utilized in gas turbine engine thermal barrier coatings, by incorporating Gd₂O₃, Er₂O₃, and TiO₂. The addition of 3-valent rare earth elements to YSZ can reduce thermal conductivity and enhance phase stability while adding the 4-valent element TiO₂ can improve phase stability and mechanical properties. Sintered specimens were prepared with hot-press equipment. Phase analysis was conducted with X-ray diffraction (XRD), and mechanical properties were assessed with Vickers hardness equipment. The research results revealed that, except for Z10YGE10T, most compositions predominantly exhibited the t-phase. Increasing the content of 3-valent rare earth oxides resulted in a decrease in the monoclinic phase and an increase in the tetragonal phase. In addition, the t(400) angle decreased while the t(004) angle increased. The addition of 10 mol% of 3-valent rare-earth oxides discarded the t-phase and led to the complete development of the c-phase. Adding 10 mol% TiO₂ increased hardness than YSZ.

• Progress in Medical Physics
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• v.15 no.1
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• pp.1-8
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• 2004

Patient dose verification is one of the most Important responsibilities of the physician in the treatment delivery of radiation therapy. For the task, it is necessary to use an accurate dosimeter that can verify the patient dose profile, and it is also necessary to determine the physical characteristics of beams used in intensity modulated radiation therapy (IMRT) The Beam Intensity Scanner (BInS) System is presented for the dosimetric verification of the two dimensional photon beam. The BInS has a scintillator, made of phosphor Terbium-doped Gadolinium Oxysulphide (Gd$_2$O$_2$S:Tb), to produce fluorescence from the irradiation of photon and electron beams. These fluoroscopic signals are collected and digitized by a digital video camera (DVC) and then processed by custom made software to express the relative dose profile in a 3 dimensional (3D) plot. As an application of the BInS, measurements related to IWRT are made and presented in this work. Using a static multileaf collimator (SMLC) technique, the intensity modulated beam (IMB) is delivered via a sequence of static portals made by controlled leaves. Thus, when static subfields are generated by a sequence of abutting portals, the penumbras and scattered photons of the delivered beams overlap in abutting field regions and this results in the creation of “hot spots”. Using the BInS, inter-step “hot spots” inherent in SMLC are measured and an empirical method to remove them is proposed. Another major MLC technique in IMRT, the dynamic multileaf collimator (DMLC) technique, has different characteristics from SMLC due to a different leaf operation mechanism during the irradiation of photon and electron beams. By using the BInS, the actual delivered doses by SMLC and DMLC techniques are measured and compared. Even if the planned dose to a target volume is equal in our experimental setting, the actual delivered dose by DMLC technique is measured to be larger by 14.8% than that by SMLC, and this is due to scattered photons and contaminant electrons at d$_{max}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.185-185
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• 2012

중공 발광 나노 물질은 특유의 구조적 특성(낮은 밀도, 높은 비표면적, 다공성 물질, 낮은 열팽창계수 등)과 광학적 성질을 이용하여 디스플레이 패널, 광결정, 약물전달체, 바이오 이미징 라벨 등의 다양한 적용이 가능하다. 이러한 적용에 있어 균일한 크기와 형태의 중공 입자는 필수 조건으로 여겨진다. 지금까지 합성된 중공 발광 입자에는 BaMgAl10O17 : Eu2+-Nd3+, Gd2O3 : Eu3+, $EuPO_4{\cdot}H_2O$과 같은 것들이 있으나 크기 조절이 어렵고, 그 균일성이 확보되지 못하였다. 균일한 크기의 중공 발광 입자를 만들기 위해 SiO2나 emulsion을 템플릿으로 이용하여 황화카드뮴, 카드뮴 셀레나이드 중공 입자를 합성한 예가 있으나, 양자점의 독성으로 인하여 바이오분야 응용에는 적합하지 않다. YAG는 모체로써 형광체에서 가장 많이 이용되는 물질로, 화학적 안정성과 낮은 독성, 높은 양자 효율 등 많은 장점을 갖고 있다. 특히 세륨이 도핑된 YAG형광체의 경우 WLED, 신틸레이터, 바이오산업에 적용이 가능하다. 그러나 지금까지 중공 YAG:Ce3+형광체를 합성한 예가 없었다. 본 연구에서는 단분산 수화 알루미늄 (Al(OH)3) 입자 위에 세륨이 도핑 된 이트륨 베이직 카보네이트 ($Y(OH)CO_3$)를 균일하게 코팅한 후 열처리를 하여 균일한 크기의 Y3Al5O12:Ce3+(YAG) 중공 입자를 합성하였다. 열처리 온도에 따른 고분해능 투과 전자 현미경(HRTEM), X-선 회절(XRD), 고분해능 에너지 분광법(HREDX) 분석결과, 중공 YAG: Ce3+입자는 Kirkendall 효과에 의해 형성됨을 확인하였다. 전계방사형 주사 전자 현미경(FE-SEM) 측정을 통해, 열처리 후에도 입자의 크기와 형태가 균일함을 확인하였으며, 공초점 현미경 관찰을 통해 중공 형태를 명확히 확인 할 수 있었다. Photoluminescence (PL) 분광법과 형광 수명 이미징 현미경(FLIM)을 이용한 광 특성 분석결과, 합성된 입자는 400-500 nm에서 흡수 파장 (456 nm에서 최대 강도)과 500-700 nm 범위의 발광 파장(544 nm에서 최대 강도)을 나타냈고, 상용 YAG: Ce3+(70 ns)에 준하는 74 ns의 잔광 시간(decay time)이 측정되었다. 단분산 수화 알루미늄 입자의 크기를 조절하여 최종 합성된 YAG: Ce3+의 크기를 조절할 수 있었다. 지름 약 600 nm의 Al(OH)3를 사용한 경우, $1,300^{\circ}C$에서 열처리를 한 후 평균 지름 590 nm의 중공입자를 합성하였고, 약 170 nm의 Al(OH)3를 이용하여, 더 낮은 온도인 $1,100^{\circ}C$에서의 열처리를 통해 평균지름 140 nm의 중공 YAG: Ce3+입자를 합성하였다. 본 연구를 통하여 합성된 균일한 크기의 YAG 중공입자는 LED와 같은 광전변환 소자 및 다기능성 바이오 이미징 등의 나노바이오 소자 분야에 활용될 수 있음이 기대된다.