• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.41-41
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• 2011

Flash memory에서 tunnel oxide film은 electron tunnelling 현상을 이용하여 gate에 전하를 전달하는 통로로 사용되고 있다. 특히, tunnel oxide film 내부의 charge trap 현상과 불순물이 소자 특성에 직접적인 영향을 주고 있어, 후속 N2O/NO 열처리 공정에서 SiO2/Si 계면에 nitrogen을 주입하여 tunnel oxide film 특성을 개선하고 있다. 따라서 N2O/NO 열처리 공정 최적화를 위해서는 tunnel oxide film 내 N 농도와 분포에 대한 정확한 평가가 필수적이다[1]. 본 실험에서는 low energy magnetic SIMS를 이용하여 N2O로 열처리된 tunnel oxide film 내의 N농도를 보다 정확하게 평가하고자 하였다. 사용된 시료는 Si substrate에 oxidation 이후 N2O 열처리를 진행하여 tunnel oxide를 형성시켰으며, 분석 impact energy는 surface effect최소화와 최상의 depth resolution 확보를 위해 250eV를 사용하였으며, matrix effect와 mass interference를 방지하기 위해 MCs+ cluster mode[2]로 CsN signal를 검출하였다. 실험 결과, 특정 primary beam 입사각도에서 nitrogen depth resolution 저하 현상이 발생하였고, SIMS crater 표면이 매우 거칠게 나타났다. 이에, Depth resolution 저하 현상을 개선하기 위해 극한의 glancing 입사각 조건으로 secondary extraction voltage 변화를 통해 depth resolution이 개선되는 최적의 impact energy와 primary beam 입사각 조건을 확보하였다. 그 결과 nitrogen의 depth resolution은 1.6nm의 depth resolution을 확보하였으며, 보다 정확한 N 농도와 분포를 평가할 수 있게 되었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.77.1-77.1
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• 2012

Zn 기반 산화물 반도체는 기존의 비정질 Si에 비해 저온공정에도 불구하고 높은 이동도, 투명하다는 장점으로 인해 차세대 디스플레이용 백플레인 소자로 주목받고 있다. 산화물 트랜지스터는 우수한 소자특성을 보여주고 있지만, 온도, 빛, 그리고 게이트 바이어스 스트레스에 의한 문턱전압의 불안정성이 문제의 문제를 해결해야한다. 산화물 반도체의 문턱전압의 불안정성은 유전체와 채널층의 계면 혹은 채널에서의 charge trap, photo-generated carrier, ads-/desorption of molecular 등의 원인으로 보고되고 있어, 고신뢰성의 산화물 채널층을 성장하기 위한 노력이 이루어지고 있다. 최근, 산화물 트랜지스터의 다양한 조건에서의 문턱전압의 불안정성을 해결하기 위해 산화물의 주된 결함으로 일컬어지고 있는 산소결핍을 억제하기 위해 성장공정의 제어 그리고, 산소와의 높은 binding energy를 같은 Al, Hf, Si 등과 같은 원소를 첨가하여 향상된 소자의 특성이 보고되고 있지만, 줄어든 산소공공으로 인해 이동도가 저하되는 문제점이 야기되고 있다. 이러한 문제점을 해결하기 위해, 최근에는 Buried layer의 삽입 혹은 bi-channel 등과 같은 방안들이 제안되고 있다. 본 연구는 atomic layer deposition을 이용하여 AZO bureid layer가 적용된 ZnO 트랜지스터의 특성과 안정성에 대한 연구를 하였다. 다결정 ZnO 채널은 유전체와의 계면에 많은 interface trap density로 인해 positive gate bias stress에 의한 문턱전압의 불안정성을 보였지만, AZO층이 적용된 ZnO 트랜지스터는 줄어든 interface trap density로 인해 향산된 stability를 보였다.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.1
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• pp.19-26
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• 2016

In this study, a bidirectional DC-DC converter for idle stop and go (ISG) is developed to reduce fuel consumption. A three-phase non-isolated half-bridge converter is selected through a design method by considering efficiency and volume. According to the state of charge of the batteries at both the low-voltage and high-voltage sides, buck mode, which charges a low-voltage battery from the generated motor energy, and boost mode, which provides power to the motor from the low- and high-voltage battery sides, are required in the ISG system. Hence, an autonomous and seamless bidirectional control method using a variable current limiter is proposed for mode change. A 1.8 kW engineering sample of the proposed converter has been built and tested to verify the validity of the proposed concept. The maximum efficiencies, including gate driver and control circuit losses, are 96.4% in charging mode and 96.1% in discharging mode.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.5
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• pp.1004-1009
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• 2009

Recently, mass spectrometers are widely used for in-situ chemical analysis. It has rapid response and high sensitivity. In this paper, we present the fabrication and test of a cold cathode emitter for micro mass spectrometer using CNTs(Carbon nano tubes). The CNTs have good mechanical, electrical and chemical characteristics. So they have a long life time and strong robustness. The micro mass spectrometer is composed of the glass substrate and the silicon substrate. The glass substrate is constructed by electrodes for TOF(Time-of-flight) which analyze an ion with mass to charge ratio as ion separator. The silicon substrate is highly doped wafer which is patterned for gate electrode and then 100 11m dry etching to grow the CNTs as the electron emitter. The CNTs are grown by HFCVD(Hot filament chemical vapor deposition) with sputtering the catalyst. We successfully attained to grow the CNTs and to test the characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.116-119
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• 1994

The characteristics of the Si-SiO$_2$ interface and the degradation in the short channel(L${\times}$W=1.7$\mu\textrm{m}$${\times}$15$\mu\textrm{m}$) SONOSFET nonvolatile memory devices, fabricated on the basis of the existing n-well CMOS processing technology for 1 Mbit DRAM with the 1.2$\mu\textrm{m}$ m design rule, were investigated using the charge pumping method. The SONOSFET memories have the tripple insulated-gate consisting of 30${\AA}$ tunneling oxide 205${\AA}$ nitride and 65${\AA}$ blocking oxide, The acceleration method which square voltage pulses of t$\_$p/=10msec, Vw=+19V and V$\_$E/=-22V continue to be alternatly applied to gale, was used to investigate the degradation of SONOSFET memories with the write/erase cycle. The degradation characteristics were ascertained by observing the change in the energy and spatial distributions of the interface trap density.

• Journal of the Korean Society for Aviation and Aeronautics
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• v.6 no.1
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• pp.147-163
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• 1998

The purpose of this research is to look for the best description of calculating the reasonable Landing Fee. Landing Fee is consisted one of major revenues for maintaining an airport. Traditional Landing Fee Rate has been charged based on the weight factor; Maximum take-off weight, Maximum landing weight, or Maximum authorized weight. To achieve a better reliable value of Landing Fee Rate, The elements of Noise and Peak-Time have to be considered as well as the aircraft weight. This research designs the algorithms for calculating Landing Fee Rate and also Landing Fee, based on the aircraft weight. The Network is also applied to above. That is, CGI(Common Gate Interface) is constructed to interface the terminal of calculating Landing Fee Rate, and the terminal of collecting and transmitting the data such as the Weight. The computer language on the CGI was made by C++ and PERL. The main point of this research is to integrate the airport and Information System and to construct the database which is based on the different perspective of calculating Landing Fee Rate. However, the result of the most efficient and reliable will be computed based on above. This research will broaden the range of application up to the each case of airports.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 1999.10a
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• pp.253-261
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• 1999

It is essential for port planning, coastal zone management and environmental impact study to analyze the variation of current and water quality due to the development of water area and discharged water from the estuary barrage and basin, etc. Mokpo sea area has downstream from a long river and two large basins, the Yongsan river and Yongam-Kumho basins, discharging much of water through water gates for the purpose of flood and prohibition of salt intrusion to the inland fresh water area. In this study, the numerical calculation were carried out for the analysis of diffusion characteristics due to discharging operation, adopting the results of tidal current simulation. ADI method is applied to the governing equation for the movement of sea water and diffusion and 6-point method to the advection terms of diffusion equation. As the results of this study, it is known that the discharging operation causes increasing and/or decreasing of current velocity and enlarging and/or depressing of pollutant diffusion limits depending on the distance from the discharging gates and the modes of discharging operation. To utilize these result, the linked gate operation and the method increasing exchange of sea water must be considered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.751-754
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• 2000

When charge-trap SONOS cells are used flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM cells were fabricated using 0.35$\mu\textrm{m}$ standard memory cell embedded logic process including the ONO cell process. based on retrograde twin-well, single-poly, single metal CMOS process. The thickness of ONO triple-dielectric for memory cell is tunnel oxide of 24${\AA}$, nitride of 74 ${\AA}$, blocking oxide of 25 ${\AA}$, respectively. The program mode(Vg: 7,8,9 V, Vs/Vd: -3 V, Vb: floating) and the erase mode(Vg: -4,-5,-6 V, Vs/Vd: floating, Vb: 3V) by modified Fowler-Nordheim(MFN) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation($\Delta$Vth, S, Gm) characteristics than channel MFN tunneling operation. Also the program inhibit conditions of unselected cell for separated source lines NOR-tyupe flash memory application were investigated. we demonstrated that the program disturb phenomenon did not occur at source/drain voltage of 1 V∼4 V and gate voltage of 0 V∼4.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.271-277
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• 2022

We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the N_it distribution using TCAD simulation. As interface trap number density (N_it) increased, the threshold voltage increased while the drain current density decreased. Under N_it=5.0×10¹⁰ cm^-2 condition, the threshold voltage was 3.2 V for V_DS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the N_it distribution type, there was an increase in the subthreshold swing (SS) following an increase in N_it. Under U-shaped N_it distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Q_f) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.

• Nuclear Engineering and Technology
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• v.55 no.8
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• pp.2873-2878
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• 2023

The purpose of this study is to perform radiation monitoring by acquiring gamma images and real-time optical images for ^99mTc vial source using charge couple device (CCD) cameras equipped with the proposed compact gamma camera. The compact gamma camera measures 86×65×78.5 mm³ and weighs 934 g. It is equipped with a metal 3D printed diverging collimator manufactured in a 45 field of view (FOV) to detect the location of the source. The circuit's system uses system-on-chip (SoC) and field-programmable-gate-array (FPGA) to establish a good connection between hardware and software. In detection modules, the photodetector (multi-pixel photon counters) is tiled at 8×8 to expand the activation area and improve sensitivity. The gadolinium aluminium gallium garnet (GAGG) measuring 0.5×0.5×3.5 mm³ was arranged in 38×38 arrays. Intrinsic and extrinsic performance tests such as energy spectrum, uniformity, and system sensitivity for other radioisotopes, and sensitivity evaluation at edges within FOV were conducted. The compact gamma camera can be mounted on unmanned equipment such as drones and robots that require miniaturization and light weight, so a wide range of applications in various fields are possible.