• Proceedings of the Korea Water Resources Association Conference
• /
• 2011.05a
• /
• pp.143-143
• /
• 2011

4대강 살리기 사업에서 국가하천 주요 구간에 대규모 보가 건설되고 있다. 이로 인해 치수 및 하천환경에 많은 문제점이 야기될 수 있으며, 발생 가능한 하천관리의 문제점을 최소화하기 위해서는 하천정비에 따른 수리학적 영향을 검토할 필요가 있다. 보의 설치는 유지유량 및 수심 확보의 목적을 지니고 있지만, 기존 하천에 설치된 보는 대부분 고정보로서 흐름의 정체를 유발시키는 단점이 있다. 최근에는 가동보가 설치되어 일정 이상의 초과 유량 및 수위를 조절할 수 있도록 탄력적인 보 운영이 이루어지고 있다. 본 연구에서는 낙동강 본류에 건설 중인 강정보 설치지점 직상 하류 구간에 대하여 가동보의 설치 및 운영에 따른 보주변의 흐름특성을 RMA2와 FLOW-3D를 이용하여 모의하였다. 2개의 수문으로 구성되어 있는 강정보의 수문 운영을 2년 빈도 및 100년 빈도 홍수량에 대하여 좌측 또는 우측 단일수문 완전개방 및 부분개방, 양측 수문의 완전개방 및 부분개방에 따른 보 상류단 수위의 변화 및 하류단에 형성되는 주흐름의 변화를 분석하였다. 2년 빈도 홍수량에서의 가동보 지점의 유속이 100년 빈도 홍수량에 대한 가동보 지점의 유속보다 크게 발생하였다. 양측 수문을 완전히 개방하였을 때 주흐름이 우안방향으로 휘는 현상이 발생하였으며, 우측 수문 단일개방에서 주흐름의 우측 휨 현상이 뚜렷이 나타나고 있어 양측 수문 개방에서의 주흐름이 우측 수문에서 발생되는 흐름에 의해 지배되고 있는 것으로 판단된다. 100년 빈도 홍수량에 대한 모의에서 수문 개방방식에 따른 보 상류부의 홍수위 변화가 크게 나타나지 않았으며, 2년 빈도 홍수량에서는 수문 개방 방식에 대한 보상류의 수위가 차이를 보였다. 가동보의 $30^{\circ}\sim60^{\circ}$ 부분개방에 대한 모의결과에서는 부분개방의 정도가 커짐에 따라 수문 지점에서의 유속이 크게 발생하였다.

• Journal of the Korean Vacuum Society
• /
• v.17 no.5
• /
• pp.461-465
• /
• 2008

The phase transformation in a film influences its surrounding. Effects of the precrystallization method, which removes influences on gate oxide caused by lateral crystallization, in metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor devices and circuits were studied. Device by the method was shown to have a higher current drive, compared with conventional postcrystallized device. Moreover, we studied DC bias-induced changes in the performance of ring oscillator. PMOS inverters fabricated using precrystallized silicon films have very high dynamic and stable performance, compared with inverters fabricated using postcrystallized silicon films.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.199-199
• /
• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.196-196
• /
• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbled appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. Based on the graphene's high carrier mobility, high frequency graphene field effect transistors have been developed. Graphene is useful for photonic components as well as for the applications in electronic devices. Graphene's unique optical properties allowed us to develop ultra wide-bandwidth optical modulator, photo-detector, and broadband polarizer. Graphene can support SPP-like surface wave because it is considered as a two-dimensional metal-like systems. The SPPs are associated with the coupling between collective oscillation of free electrons in the metal and electromagnetic waves. The charged free carriers in the graphene contribute to support the surface waves at the graphene-dielectric interface by coupling to the electromagnetic wave. In addition, graphene can control the surface waves because its charge carrier density is tunable by means of a chemical doping method, varying the Fermi level by applying gate bias voltage, and/or applying magnetic field. As an extended application of graphene in photonics, we investigated the characteristics of the graphene-based plasmonic waveguide for optical signal transmission. The graphene strips embedded in a dielectric are served as a high-frequency optical signal guiding medium. The TM polarization wave is transmitted 6 mm-long graphene waveguide with the averaged extinction ratio of 19 dB at the telecom wavelength of $1.31{\mu}m$. 2.5 Gbps data transmission was successfully accomplished with the graphene waveguide. Based on these experimental results, we concluded that the graphene-based plasmonic waveguide can be exploited further for development of next-generation integrated photonic circuits on a chip.

• Journal of the Institute of Convergence Signal Processing
• /
• v.11 no.2
• /
• pp.163-168
• /
• 2010

This paper presents the practical implementation of an over-temperature protection system for power semiconductor devices. In the proposed system, temperature variation is provided with just using $R_{ds(on)}$ characteristics of power MOSFET, while extra device such as a temperature sensor or an over-temperature detection transistor is needed to monitor the temperature in the conventional method. The proposed protection technique is experimentally tested on IRF840 power MOSFET. The PIC microcontroller PIC16F877A is used for the implementation of the proposed protection algorithm. The built-in 10-bit A/D converter is utilized for detecting voltage variance between a drain and a source of IRF840. The induced temperature-resistance relationship based on the measured drain-source voltage, supplies a gate signal to the power MOSFET. If detected temperature's voltage exceeds any a protection temperature's voltage, the microcontroller removes the trigger signal from the power MOSFET. These test results showed satisfactory performances of the proposed protection system in term of accuracy within 1.5%.

• The Journal of the Korea Contents Association
• /
• v.11 no.5
• /
• pp.489-499
• /
• 2011

While lots of information service providers utilize the information visualization to deliver information clearly and efficiently, the misuse of information visualization can occur many problems. We evaluated and analyzed visualization elements mainly applied to the representative information services. To find out the relation between attributes of visualization elements and efficiency of information service, we had analyzed attributes of target elements before we have evaluated. Through this study we revealed that Information visualization on information service has to be applied with considering the characteristics of information and each visualization element, and its elements can be optimized and support users to obtain intuitive insight when they are complementally combined and offer sufficient attributes additionally. We expect that the result of this study will be a guide for utilizing information visualization and developing visualization elements.

• Korean Journal of Optics and Photonics
• /
• v.13 no.6
• /
• pp.543-547
• /
• 2002

We have constructed two extended-cavity diode lasers which are phase-locked with a 9.2 GHz frequency offset. We adopted a digital servo circuit for the phase-locking. The relative linewidth of the phase-locked lasers was less than 2 Hz. Using the measured beat spectrum, we found the carrier concentration to be about 93 %. We measured phase noise and relative frequency stability of the lasers. The Allan deviation at the gate time of 20 s was $2.7{\times}10^{-19}$.

• Korean Journal of Optics and Photonics
• /
• v.17 no.6
• /
• pp.564-568
• /
• 2006

Using the cross-gain modulation (XGM) characteristics of semiconductor optical amplifiers (SOAs), multi-functional all-optical logic gates, including XOR, AND, and OR gates are successfully simulated and demonstrated at 10Gbit/s. A VPI component maker^TM simulation tool is used for the simulation of multi-functional all-optical logic gates and the10 Cbit/s input signal is made by a mode-locked fiber ring laser. A multi-quantum well (MQW) SOA is used for the simulation and demonstration of the all-optical logic system. Our suggested system is composed of three MQW SOAs, SOA-1 and SOA-2 for XOR logic operation and SOA-2 and SOA-3 for AND logic operation. By the addition of two output signals XOR and AND, all-optical OR logic can be obtained.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.227-228
• /
• 2006

In this paper, we introduce the design and fabrication of 60 GHz low noise amplifier MMIC for IEEE802.15.3c WPAN system. The 60 GHz LNA was designed using ETRI's $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The performances of the fabricated 60 GHz LNA MMIC are operating frequency of $60.5{\sim}62.0\;GHz$, small signal gain ($S_{21}$) of $17.4{\sim}18.1\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-14{\sim}-3\;dB$, output reflection coefficient ($S_{22}$) of $-11{\sim}-5\;dB$ and noise figure (NF) of 4.5 dB at 60.75 GHz. The chip size of the amplifier MMIC was $3.8{\times}1.4\;mm^2$.

• The Research Journal of the Costume Culture
• /
• v.23 no.1
• /
• pp.45-62
• /
• 2015

This study is to develop cultural products based on 'Jeju Choga', which means the traditional houses in Jeju. For the product development, old literature review, field surveys, and consumer surveys were employed. Through old literatures and field surveys, the unique and visual characteristics of Jeju Choga were confirmed: A thatched roof with lattice pattern, a side wall and fences with porous stones, a 'Jungnang' serving as a gate, and a 'Pungchai' preventing strong sola radiation and 'Ollai' meaning a narrow street in front of the Choga. As a results of consumer survey conducted before the development of products, consumers highly recognized and associated Jeju Choga as Jeju representative image. The six basic patterns of Jeju Choga were drawn and eight textile designs were created through the repeated arrangements of the basic patterns. Using the created textile designs and digital printing method, the eleven new fabrics with the patterns of Jeju Choga were developed. The various kinds of ten bags and tow wallets made with the new fabrics. As a result of consumer evaluation for the twelve products made in this study, the scores of preference and purchase intention were above the average work for the most products of them. In particular, the preference and purchase intention of the square shoulder bag, the big-size shopper bag, and the small-size cross bag were very positively evaluated. Therefore, it is confirmed that Jeju Choga could be very useful as a motif for the development of cultural products focusing on Jeju tourism souvenir market.