• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.300-303
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• 2003

The design rule for 8.5kV LTT was discussed here. An inherent integrated breakover diode (BOD) for self -protection function and multi-amplified gate (AG) for improved di/dt capability of LTT was introduced in principle. The trade-off between light triggering input source and high dV/dt limitation has been treated via narrow grooved P-base for gate design. Key process technology for LTT was given, too.

• Proceedings of the Korean Institute of Interior Design Conference
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• 2004.11a
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• pp.173-174
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• 2004

The Great Wall is an element in University which stand outs as a landmark. The Great Wall is located in front of the grand staircases of the gymnasium in the main gate area. Falling water and Lights shows a spectacle panorama in various point of view. Water falls down the top of the grand staircases and the front walls. And the red, blue and green lights brighten the falling water in the evenings. Also the relief of the palm tree and turtle symbolizes the University Identity. The wall is comprehends not only the day and the night but four seasons. The Water, Lights, and the Relief are coordinates well along with the new building in campus.

• The KSFM Journal of Fluid Machinery
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• v.12 no.2
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• pp.31-38
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• 2009

The valve performance has been evaluated from the theoretical equation based on design information such as packing thrust, spring preload and friction coefficient(${\mu}$). The accuracy of those data can be lower than that of vendor's initial design data. Especially, the friction coefficient can be degraded with time than the original condition and the valve performance calculated using the previous friction coefficient can not be available. Accordingly, this paper is describing a new performance evaluation method of valve based on diagnostic test data which are acquired from a site valve tested in static and dynamic conditions. Especially, this paper provides a new method using friction coefficient(${\mu}$) which is derived from the diagnostic test data acquired in the valve's design basis condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.713-717
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• 2011

This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and $0.4\;m{\Omega}cm^2ultra$ low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.7 no.2
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• pp.96-105
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• 2004

Throughout the modernization which was dominated by development theory in Korea, land use planning for housing tended to spoil the environment. Numerous studies, however, pointed out the problem of this development-led planning and there was a broader consensus that the past planning was part of the environmental problem of inner city. These observations changed the development-led planning into the environmental friendly development planning. In particular, Seoul Metropolitan Government held the international planning competition to develop 'Sangam' as an environment friendly residential area. With this plan 'Sangam' would be the sustainable residential area with the harmony of nature, human and technology. Furthermore it would be the outset of the long-term plan to develop 'Seoul' as a 'gate-city, an 'information-city' and an 'eco-city'. To do this, it needs especially the planners' and the constructors' constant concerns and efforts as well as the citizen's participation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.981-984
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• 2009

In this paper, We design RS(255,239) decoder with modified Euclidean algorithm, which show polynomic coefficient state machine instead of calculating coefficients of modified Euclidean algorithm. This design can reduce complexity and implement High-speed Read Solomon decoder. Additionally, we have synthesized with Xilinx XC4VLX60. From synthesis, it can operate at clock frequency of 77.4MHz, and gate count is 20,710.

• Transportation Technology and Policy
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• v.7 no.4
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• pp.89-94
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• 2010

• Korean Architects
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• s.650
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• pp.82-85
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• 2023

• ETRI Journal
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• v.31 no.5
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• pp.604-606
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• 2009

The primary dose effects on an insulated gate bipolar transistor (IGBT) irradiated with a $^{60}Co$ gamma-ray source are found in both of the components of the threshold shifting due to oxide charge trapping in the MOS and the reduction of current gain in the bipolar transistor. In this letter, the IGBT macro-model incorporating irradiation is implemented, and the electrical characteristics are analyzed by SPICE simulation and experiments. In addition, the collector current characteristics as a function of gate emitter voltage, VGE, are compared with the model considering the radiation damage of different doses under positive biases.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.713-717
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• 2001

This paper focuses on a network model for GCTs which can be used to investigate high power circuits with or without using RC-snubbers. The series connection of GCTs is commonly applied in the high power inverter field. Here expensive and space-consuming snubbers are applied, to overcome the problem of an asymmetric distribution of the blocking voltage among the single GCTs. As an alternative to large snubbers, a new active gate drive concept is proposed and investigated by simulation.