• Journal of Korean Society of Industrial and Systems Engineering
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• v.38 no.1
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• pp.44-51
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• 2015

When manufacturing die casting mold, generally, the casting layout design should be considered based on the relations of injection system, casting condition, gate system, and cooling system. According to the various relations of the conditions, the location of product defects was differentiated. High-qualified products can be manufactured as those defects are controlled by the proper modifications of die casting mold with keeping the same conditions. In this research, Computer Aided Engineering (CAE) simulation was performed with the several layout designs in order to optimize the casting layout design of an automotive part (Housing). In order to apply them into the production die-casting mold, the simulation results were analyzed and compared carefully. With the filling process, internal porosities caused by air entrapments were predicted and also compared with the modification of the gate system and overflow. With the solidification analysis, internal porosities occurring during the solidification process were predicted and also compared with the modified gate system. The simulation results were also applied into the production die-casting mold in order to compare the results and verify them with the real casting samples.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.116-125
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• 2002

Semi-Solid Diecasters usually carry out the Semi-Solid diecasting experiments before producing new casts. At the Semi-Solid diecasting stages, the runner-gate part has been always repeatedly corrected, which leads to a tedious processing time and increased processing cost. A large amount of experience is essential in manual assessment and if the design is defective, much time and a great deal of efforts will be wasted in the modification of the die. In this study, design system has been developed based on design database. In addition, gate experiment for gating system design has been carried out to append the database. It is possible for engineers to make efficient gating system design of Semi-Solid diecasting and it will result in the reduction of expenses and time to be required. The detailed contents of the research are described in the followings.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1009-1013
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• 2009

In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 2005.10a
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• pp.306-312
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• 2005

Gates for the purpose of drainage are classified following the types of structure as: Radial Gate, Sluice Gate, Rolling Gate, Drum Gate. In many cases of the reclamation project the sluice type of gates are applied. Different from this general trend, however the radial type of gate was adopted in the Saemangeum project. In this case the discharge coefficients which are used for the sluice type of gate was applied. To estimate the correct amount of discharge which will be evacuated through the gates, therefore the proper discharge coefficients should be estimated before the operation of the gates. The discharge coefficients were estimated through the physical hydraulic modeling, and we got the results as: $0.72{\sim}0.84$ for the submerged condition on the both sides of upstream and downstream, $0.62{\sim}0.83$ for the free surface condition on the downtream side only, and $1.04{\sim}1.12$ for the free surface condition on the both sides of upstream and downstream. The discharge coefficients obtained from the experiments are greater than those of the sluice gates in the design criteria. From the results of the study we may expect that in the Saemangeum project the radial gates could evacuate larger amount of discharge than the originally designed discharge, so that we may sure that the Saemangeum gates have enough capability to control the evacuation of water not only in the usual period but also in the flooding season.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.7
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• pp.4411-4417
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• 2015

The proper design of the gate location for injection molding of plastic goods is obtained from three-dimensional injection molding analysis for various design alternatives. This paper is study on effect of gate location in injection molding. It have a decisive impact on productivity and quality of plastic goods. This objectives of this paper is to analysis effect of hot runner gate location for resin filling, weld line, injection pressure to manufacture of automobile air cleaner upper case with injection molding machine. Thus, to analysis these problems in this paper, location of gate are gave variety in 4 CASEs. In this paper, the CAE simulation considering each variations in location of gate is performed to predict the cause of faulty which appears in the injection molding process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.1-6
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• 2008

The holding voltage of the high-voltage MOSFETs in snapback condition is much smaller than the power supply voltage. Such characteristics may cause the latcup-like problems in the Smart Power ICs if these devices are directly used in the ESD (Electrostatic Discharge) power clamp. In this work, a latchup-free design based on the Drain-Extended PMOS (DEPMOS) adopting gate VDD structure is proposed. The operation region of the proposed gate-VDD DEPMOS ESD power clamp is below the onset of the snapback to avoid the danger of latch-up. From the measurement on the devices fabricated using a $0.35\;{\mu}m$ BCD (Bipolar-CMOS-DMOS) Process (60V), it was observed that the proposed ESD power clamp can provide 500% higher ESD robustness per silicon area as compared to the conventional clamps with gate-driven LDMOS (lateral double-diffused MOS).

• Korea Science and Art Forum
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• v.20
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• pp.421-428
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• 2015

Electronic/hybrid car and electroplating rectifier should have switching devices such as SCR, MOSFET, IGBT. And those switching devices should be operated by gate driver. In this paper, we propose high power gate driver that contains H-Bridge using 4 BJTs. H-Bridge and transformer generate isolate power. And gate control signal is transferred to isolated one by photo coupler and operate real switching device. We designed H-Bridge and 555-Timer by PSpice simulation and manufactured real product. Finally we succeed to operate 27V 50,000A electroplating rectifier using proposed gate driver.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.18 no.2
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• pp.130-136
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• 2009

Semi-solid casting(SSC) of magnesium alloys is increasingly being used to produce high quality components. This process is similar to the injection molding of plastics and is called thixomolding. Using this process, higher strength, thinner wall sections and tighter tolerances without porosity are obtained. The high strength and low weight characteristics of magnesium alloys render the high-precision fabrication of thin-walled components with large surface areas. They are widely used for the IT, auto and consumer electronics industries. However, warpage of the thin-walled sections degrade quality of the parts produced in the SCC process. To produce thin-walled magnesium alloy parts, the geometry of gating system on the quality of the finished products should be clearly studied. In this paper, to minimize warpage of the thin-walled sections, Taguchi method is applied to the optimal design of the gate geometry in the thixomolding process. Width, height, length and angle of the gating system are selected for the robust design parameters. Effectiveness of the robust design is verified through the CAE software.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2005.05a
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• pp.232-235
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• 2005

ATM(Automated-Teller Machine) is a maching that receives and pays money directly. The gate module of an ATM separates forgeries from bills and changes the transfer direction of bills. In this paper, the dynamic behavior of the gate was analyzed numerically and experimentally. The moment of inertia of the gate lever, the suction force of the solenoid and the spring force were measured respectively. And the displacements of the plunger, the vibration of the bracket, the input voltage and current were measured experimentally. The measured dynamic behaviors were simulated numerically using SAMCEF program, which can accommodate the kinematics and vibrations of flexible bodies. Through the analysis, the design factors were found to make a fast and reliable new ATM machine.

• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.