• Journal of computational fluids engineering
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• v.2 no.1
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• pp.54-65
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• 1997

Wall wetting in diesel engines has been considered as a bad phenomenon because of fuel deposition which makes fuel/air mixing and evaporation worse. In order to avoid the problem, many research works have been carried out. One of the studies is on new combustion chamber systems which are using spray impacting on a wall. In this study a new type of chamber system is analysed using wall impaction model introduced and assessed in the coupled paper. The gas phase is modelled in terms of the Eulerian continuum conservation equations of mass, momentum, energy and fuel vapour fraction, The liquid phase is modelled following the discrete droplet model approach in Lagrangian form. With various conditions the spray distribution, vapor contour and gas flows are analyzed, and then design factors of those combustion systems are recommended.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.446-450
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• 2013

TRISO coated particles with a ZrC barrier layer were fabricated by a fluidized-bed chemical vapor deposition (FBCVD) method for a use in a very high temperature gas-cooled reactor (VHTR). The ZrC layer was deposited by the reaction between $ZrCl_4$ and $CH_4$ gases at $1500^{\circ}C$ in an $Ar+H_2$ mixture gas. The amount of free carbon codeposited with in ZrC was changed by controlling the dilution gas ratio. Near-stoichiometric ZrC phase was also deposited when an impeller was employed to a $ZrCl_4$ vaporizer which effectively inhibited the agglomeration of $ZrCl_4$ powders during the deposition process. A near-stoichiometric ZrC coating layer had smooth surface while ZrC containing the free carbon had rough surface with tumulose structure. Surface roughness of ZrC increased further as the amount of free carbon increased.

• Journal of the Korean Ceramic Society
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• v.48 no.3
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• pp.236-240
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• 2011

In order to deposit a homogeneous and uniform ${\beta}$-SiC films by chemical vapor deposition, we demonstrated the phase stability of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure, temperature and gas composition as variables. The ${\beta}$-SiC predominant region over other solid phases like carbon and silicon was changed gradually and consistently with temperature and pressure. Practically these maps provide necessary conditions for homogeneous ${\beta}$-SiC deposition of single phase. With the thermodynamic analyses, the CVD apparatus for uniform coating was modeled and simulated with computational fluid dynamics to obtain temperature and flow distribution in the CVD chamber. It gave an inspiration for the uniform temperature distribution and low local flow velocity over the deposition chamber. These calculation and model simulation could provide milestones for improving the thickness uniformity and phase homogeneity.

• Proceedings of the KSME Conference
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• 2000.04a
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• pp.188-193
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• 2000

A more accurate life prediction for gas turbine blade takes into account the material behavior under the complex thermo-mechanical fatigue(TMF) cycles normally encountered in turbine operation. An experimental program has been carried out to address the thermo-mechanical fatigue life of the IN738LC nickel-base superalloy. In the first phase of the study, out-of-phase and in-phase TMF experiments have been performed on uncoated and coated materials. In the temperature range investigated. the deposition of NiCrAlY air plasma sprayed coating did not affect the fatigue resistance. In the second phase of the study, a physically-base life prediction model that takes into account of the contribution of different damage mechanisms has been applied. This model was able to reflect the temperature and strain rate dependences of isothermal cycling fatigue lives, and the strain-temperature history effect on the thermo-mechanical fatigue lives.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.29-33
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• 2018

Using a vanadium dioxide ($VO_2$) source, highly pure and amorphous vanadium oxide (VO) thin films were deposited using an e-beam evaporator at room temperature and high vacuum (<$10^{-7}$ Torr). Then, by controlling the post-annealing conditions such as $N_2:O_2$ pressure ratio and annealing time, we could easily synthesize a homogeneous $VO_2$ thin film and also mixed-phase VO thin films, including $VO_2$, $V_2O_5$, $V_3O_7$, $V_5O_9$, and $V_6O_{13}$. The crystallinity and phase of these were characterized by X-ray diffraction, and the surface morphology by FE-SEM. Moreover, the electrical properties and ethanol sensing measurements of the VO thin films were analyzed as a function of temperature. In general, mixed-phases as a self-doping effect have enhanced electrical properties, with a high carrier density and an enhanced response to ethanol. In summary, we developed an easy, scalable, and reproducible fabrication process for VO thin films that is a promising candidate for many potential electrical and optical applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.163-166
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• 2002

We studied the growth of large-grain pentacene film by organic vapour phase deposition. The optimizations of the growth of pentacene are carried out by varying the gas pressure in the reactor and substrate temperature. We found that the grain size depends strongly on the gas pressure in the reactor. The grain size of $20{\mu}m$ has been obtained at the gas pressure of 200 Torr. The film was found to be strongly (001) oriented and its grain size decreases with decreasing the gas pressure.

• Journal of the Korean Ceramic Society
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• v.29 no.7
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• pp.525-532
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• 1992

TiO2 fine powder was synthesized in the gas phase by chemical vapor deposition using hydrolysis of TiCl4. Content of rutile phase in the powder was investigated. Powder characteristics such as size, crystallinity and morphology were also studied by means of TEM, SEM and XRD. Rutile phase in TiO2 powder started to be formed from 100$0^{\circ}C$ and the content increased with the reaction temperature and TiCl4 concentration. As the temperature increased from 80$0^{\circ}C$ to 140$0^{\circ}C$, the primary particle size increased while secondary particle size decreased. Spherical secondary particle with fine primary crystals agglomerated was produced at low temperature of 80$0^{\circ}C$ whereas the grown primary particle being final particle size was produced at higher temperature of 140$0^{\circ}C$. Other effects of TiCl4 and H2O partial pressures on particle size were also reported in this study.

• ETRI Journal
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• v.19 no.1
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• pp.26-35
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• 1997

The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.

• Journal of Surface Science and Engineering
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• v.32 no.3
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• pp.307-311
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• 1999

The well-crystalline hydroxyapatite($Ca_{10}(PO_4)_6(OH)_2$ ; HAp) layer having a biocompatibility was successfully coated onto titanium substrate using a radio-frequency magnetron sputtering, and effects of sputtering gas and the thickness of HAp film on a crystal growth of the HAp layers were investigated. The deposition rate of the layer sputtered with water-vapour gas was slower than that of the layer sputtered with argon gas. The results of X-ray diffraction demonstrated that the about $0.8\mu\textrm{m}$ thick HAp film under water-vapour gas was an amorphous phase, the about $1.2\mu\textrm{m}$ thick film was (100) plane-oriented HAp, and the about $1.5\mu\textrm{m}$ thick film was (001)plane-oriented HAp. FT-IR analysis proved that hydroxyl group of the layer sputtered with argon gas was defected, but that of the layer sputtered with water-vapour gas was not defected. From these results, it was favorable to use water-vapour gas on the HAp coatings onto metal surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.22-27
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• 1992

Phosphorus doped hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin films were deposited by PECVD (Plasma Enhanced Chemical Vapour Deposition) method using 10.2% $SiH_4$ gas (diluted in Ar) and 308ppm $PH_3$ gas (diluted in Ar). The structural, optical and electrical properties of the films were investigated as a function of substrate temperature(15 to $400^{\circ}C$) and RF power(10 to 120W). The thin film deposited by varing substrate temperature had columnar structure and microcrystalline phase. The volume fraction of microcrystalline phase in the films deposited at RF power of 80W, increased with increasing substrate temperature up to $200^{\circ}C$, and then decreased with further increasing substrate temperature. Volume fraction of microcrystalline phase increased monotonously with increasing RF power at substrate temperature of $250^{\circ}C$. With increasing volume fraction of microcrystalline, electrical resistivity of films decreased to 0.274 ${\Omega}cm$.