• 한국분말재료학회지
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• 제21권5호
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• pp.371-376
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• 2014

In this study, modified catalytic chemical vapor deposition (CCVD) method was applied to control the CNTs (carbon nanotubes) growth. Since titanium (Ti) substrate and iron (Fe) catalysts react one another and form a new phase ($Fe_2TiO_5$) above $700^{\circ}C$, the decrease of CNT yield above $800^{\circ}C$ where methane gas decomposes is inevitable under common CCVD method. Therefore, we synthesized CNTs on the Ti substrate by dividing the tube furnace into two sections (left and right) and heating them to different temperatures each. The reactant gas flew through from the end of the right tube furnace while the Ti substrate was placed in the center of the left tube furnace. When the CNT growth temperature was set $700/950^{\circ}C$ (left/right), CNTs with high yield were observed. Also, by examining the micro-structure of CNTs of $700/950^{\circ}C$, it was confirmed that CNTs show the bamboo-like structure.

• 한국결정성장학회지
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• 제9권3호
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• pp.280-285
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• 1999

화학기상증착법 (CVD) 으로 $\alpha$-Fe$_2$O$_3$ 박막가스센서를 제조하여 NO가스에 대한 검지감도 특성을 조사하였다. 150~$250^{\circ}C$로 증착온도를 변화시키면서 $\alpha$-Fe$_2$O$_3$ 박막을 증착하였을 때 $175^{\circ}C$와 20$0^{\circ}C$에서 증착한 박막은 $\alpha$-Fe$_2$O$_3$상이 나타났으나 $250^{\circ}C$에서 증착한 시편에서는 ${\gamma}$-Fe$_2$O$_3$상이 나타났다. X-선 회절분석으로 증착 및 열처리 조건에 따른 결정립의 크기변화를 조사한 결과 증착온도가 증가하거나 열처리시에 결정리이 성장함을 알 수 있었다. 가스검지감도 측정결과 175$^{\circ}C$에서 증착한 시편의 감도가 가장 좋은 것으로 나타났고, 이때 NO 가스 250ppm에 대한 검지감도는 3.2, 100ppm일때의 응답시간은 12초였다.

• 한국진공학회지
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• 제7권1호
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• pp.29-34
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• 1998

PECVD방법으로 증착된 비정질 실리콘(a-Si)박막이 고상결정화되고 x-선 회절 (XRD)방법으로 조사되었다. a-Si박막들은 기판 온도 120-$380^{\circ}C$사이에서 Si(100)웨이퍼 위에 $SiH_4$가스 혹은 수소희석된 $SiH_4$가스로 증착되고, $600^{\circ}C$로 가열되어 결정화되었다. 고상화 되었을 때(111), (220), (311)XRD피크들이 나타났고 (111) 우선방위가 두드러졌다. 고상결정 화된 다결정 실리콘(poly-Si)박막들의 XRD피크의 세기는 기판온도가 낮아짐에 따라 증가되 었고, 수소희석은 고상화 효과를 감소시켰다. XRD로 측정된(111)결정립의 평균크기는 기판 온도가 낮아짐에 따라 약 10nm로 증가하였다. 기판온도가 낮아질수록 증착속도는 증가하였 으며, 결정의 크기는 증착속도와 밀접한 관계가 있었다. Si계의 구조적 무질서도가 클수록 고상화에 의한 결정립의 크기도 커지는 것으로 생각된다.

• 전자공학회논문지D
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• 제36D권7호
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• pp.17-25
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• 1999

PECVD 법을 이용하여 Tungsten Nitride($WN_x$) 박막을 $WSi_3N_4$ 기판위에 형성하였다. $WN_x$ 박막은 기관온도, 가스의 유량, rf power 등의 공정변수를 변화시키면서 형성되었고, 서로 다른 질소원으로 $NH_3$와 $N_2$를 각각 사용하여 박막의 특성을 조사하였다. $WN_x$ 막 내의 질소함량은 $NH_3$와 $N_2$의 유량에 따라 0~45% 정도로 변화하였으며, $NH_3$를 사용하였을 때, 최고 160nm/min의 높은 성장률을 나타내었다. $WSi_3N_4$ 기판 위에서는 TiN이나 Si 위에서보다 높은 성장률을 나타내었다. $WN_x$ 박막의 순도를 AES로 측정해 본 결과 $NH_3$를 사용했을 때 고순도의 박막을 얻을 수 있었다. XRD 분석으로 순수한 다결정의 W가 비정질의 $WN_x$로 변화되는 것을 알 수 있었으며, 이것은 $WN_x$가 식각 공정시 미세 패턴 형성이 W보다 유리할 것이라는 것을 보여준다. TiN, NiCr, Al 등의 다양한 기판 위에 형성해 본 결과 Al 위에서 최대 $1.6 {\mu}m$의 두꺼운 막이 형성되었다.

• 한국재료학회지
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• 제8권5호
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• pp.377-382
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• 1998

Ti[N ($C_{2}$$H_{5}$ $CH_{3}$)$_{2}$]$_{4}$ [tetrakis(ethylmethylammino)titanium.TEMAT]와 $NH_{3}$를 반응가스로 하여 각각 펄스(pulse) 형태로 시분할 주입되는 새로운 박막 증착방법(이하 Cycle-CVD라 함)을 이용하여 TiN박막이 $SiO_2$.기판위에 증착되었다.Cycle-CVD에서 반을로 내로 주입되는 반응가스와 Ar가스는 TEAM 펄스, Ar 펄스,$NH_{3}$펄스, Ar 펄스의 순서로 시분할주입되었고, 이렇게 차례대로 주입되는 4개의 펄스를 하나의 cycle로 규정하고, Cycle-CVD는 이러한 cycle이 연속하여 반복적으로 주입되도록 설계되었다. 기판온도가 $170^{\circ}C$-$210^{\circ}C$에서는 atomic layer deposition(ALD)특성을 보였고, $200^{\circ}C$에서 충분한 반응가스의 펄스시간 후에 cycle당 증착된 박막의 두께가 0.6nm/cycle로 포화되는 양상을 보여주었는데, 이는 cycle당 증착된 TiN 박막의 두께가 1.6 monolayer(ML)/cycle에 해당된다. 이와 같이 반등가스의 흡착을 이용ㅇ하여 TiN이 제한된 표면반응만에 의하여 ALD 기구에 의해 증착이 이루어지므로 TiN 박막의 두께는 단지 cycle 횟수만으로 정확하게 제어할 수 있었고, 우수한 step coverage 특성을 얻었다. 또한 반응가스간의 기상반응을 방지함으로써 입자의 발생을 억제할 수 있었고, 상대적으로 낮은 온도임에도 불구하고 4at% 이하의 낮은 탄소함량을 갖는 양호한 특성을 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Environmental Engineering Research
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• 제22권1호
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• pp.19-30
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• 2017

Direct catalysis of vapors from vacuum pyrolysis of biomass was performed on MCM-41 to investigate the effects of operating parameters including catalyzing temperature, catalyzing bed height and system pressure on the organic yields. Optimization of organic phase yield was further conducted by employing response surface methodology. The statistical analysis showed that operating parameters have significant effects on the organic phase yield. The organic phase yield first increases and then decreases as catalyzing temperature and catalyzing bed height increase, and decreases as system pressure increases. The optimal conditions for the maximum organic phase yield were obtained at catalyzing temperature of $502.7^{\circ}C$, catalyzing bed height of 2.74 cm and system pressure of 6.83 kPa, the organic phase yield amounts to 15.84% which is quite close to the predicted value 16.19%. The H/C, O/C molar ratios (dry basis), density, pH value, kinematic viscosity and high heat value of the organic phase obtained at optimal conditions were 1.287, 0.174, $0.98g/cm^3$, 5.12, $5.87mm^2/s$ and 33.08 MJ/kg, respectively. Organic product compositions were examined using gas chromatography/mass spectrometry and the analysis showed that the content of oxygenated aromatics in organic phase had decreased and hydrocarbons had increased, and the hydrocarbons in organic phase were mainly aliphatic hydrocarbons. Besides, thermo-gravimetric analysis of the MCM-41 zeolite was conducted within air atmosphere and the results showed that when the catalyst continuously works over 100 min, the index of physicochemical properties of bio-oil decreases gradually from 1.15 to 0.45, suggesting that the refined bio-oil significantly deteriorates. Meanwhile, the coke deposition of catalyst increases from 4.97% to 14.81%, which suggests that the catalytic activity significantly decreases till the catalyst completely looses its activity.

• Current Photovoltaic Research
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• 제3권3호
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• pp.80-84
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• 2015

We suggest new emitter formation method using solid-phase epitaxy (SPE); solid-phase epitaxy emitter (SEE). This method expect simplification and cost reduction of process compared with furnace process (POCl3 or BBr3). The solid-phase epitaxy emitter (SEE) deposited a-Si:H layer by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) on substrate (c-Si), then thin layer growth solid-phase epitaxy (SPE) using rapid thermal process (RTP). This is possible in various emitter profile formation through dopant gas ($PH_3$) control at deposited a-Si:H layer. We fabricated solar cell to apply solid-phase epitaxy emitter (SEE). Its performance have an effect on crystallinity of phase transition layer (a-Si to c-Si). We confirmed crystallinity of this with a-Si:H layer thickness and annealing temperature by using raman spectroscopy, spectroscopic ellipsometry and transmission electron microscope. The crystallinity is excellent as the thickness of a-Si layer is thin (~50 nm) and annealing temperature is high (<$900^{\circ}C$). We fabricated a 16.7% solid-phase epitaxy emitter (SEE) cell. We anticipate its performance improvement applying thin tunnel oxide (<2nm).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• 한국화재소방학회논문지
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• 제33권6호
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• pp.95-104
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• 2019

화재 시 발생하는 연기는 가스상 물질과 이들을 흡착한 미연탄소 등의 입자상 물질로 이루어져 있다. 연기 중 가스상 물질의 흡입에 의한 인체피해는 대부분 단기적으로 이루어지는 데 비하여 입자상 물질의 흡입에 의한 피해는 가스상의 흡착상태에 따라서 상대적으로 장기적으로 이루어진다. 입자상 물질이 호흡기벽에 침착하여 호흡기 및 순환기 계통에 영향을 미치는 것과 관련하여, 침착되는 연기입자의 양과 호흡기 내 침착위치는 인체피해 산정의 중요한 요소인데, 이들은 연소조건에 영향을 받는 크기 및 농도 등 입자상태와 함께 호흡조건에 영향을 받는다. 이 연구에서는 화재 시 발생하는 연기의 흡입에 의한 인체피해 연구와 관련된 호흡기 내 연기입자 침착특성 파악을 위하여 연료종류, 연소조건 및 호흡조건에 따라 호흡기 내 영역별로 침착되는 연기입자의 입경에 따른 개수 및 질량 농도를 구하였다. 또한 각 조건별로 흡입연기의 일정기간 동안 호흡기 내 질량 침착량을 대기환경 미세먼지 기준치와 비교 분석하였다.