• Journal of Advanced Marine Engineering and Technology
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• v.32 no.2
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• pp.284-291
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• 2008

This study presents an aerodynamic design and numerical analysis of a centrifugal compressor in gas turbines for SOFC-gas turbine hybrid system application. Total-to-total pressure ratio of the compressor is 3.6:1 that could be used widely for small and large SOFC-gas turbine systems. The compressor consists of a centrifugal impeller and a wedge diffuser. Conceptual design and aerodynamic design with mean line analysis and quasi-3D analysis are performed, and aerodynamic parameters as well as design variables are discussed from the design results. A numerical analysis based on the Reynolds-averaged Navier-Stokes equation was performed for the flow analysis of the compressor. The results show that the centrifugal compressor designed meets the design target, and the aerodynamic parameters and results of the compressor can be used for the aerodynamic design of centrifugal compressors and the feasibility study of SOFC-gas turbine system design.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1315-1322
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• 1988

$SnO_X$/Pt thin film gas sensors were fabricated and their performance characteristics were measured. The $SnO_X$/Pt films were deposited by vacuum evaporating the $SnO_2$ target mixed with 2 wt% Pt. The conductivity showed the temperature dependence and the sensitivity to CO gas was proportional to the square root of gas concentration below 2000 ppm. The optimum operating temperature of the fabricated devices was about 300$^{\circ}$C and the response time in 5000 ppm CO gas was about 20 sec.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.799-808
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• 1995

Transparent conductive films of aluminium doped zinc oxide (AZO) have been prepared by using the DC magnetron sputtering with the ZnO : Al (Al2O3 2 wt%) oxide target oriented to c-axis. Electrical and optical properties depended upon the O2/Ar gas ratio. The optical transmittance and sheet resistance of the AZO coated glass was 60~65% and 75Ω/$\square$, respectively at the O2/Ar gas ratio of 0. With the increase of the oxygen partial pressure to 2.0$\times$10-2, they were increased to the values of 81% and 1kΩ/$\square$, respectively. The films with the resistivities of 1.2~1.4$\times$10-3 Ω.cm, mobilities of 11~13 $\textrm{cm}^2$/V.sec and carrier concentrations of 3.5$\times$1020~4.0$\times$1020/㎤ were produced at the optimum O2/Ar gas ratio, which was 0.5$\times$10-2~1.0$\times$10-2. According to XRD analysis, the films have only one peak corresponding to the (002) plane, which indicates that there is a strong preferred orientation of the films. The grain size of ZnO films were calculated to 200~320 $\AA$, which was increased with the O2/Ar gas ratio and Ar gas flowrate.

• Korean Journal of Materials Research
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• v.24 no.8
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• pp.413-416
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• 2014

The effects of an addition of CNT on the sensing properties of nano ZnO:CNT-based gas sensors were studied for $H_2S$ gas. The nano ZnO sensing materials were grown by a hydrothermal reaction method. The nano ZnO:CNT was prepared by ball-milling method. The weight range of the CNT addition on the ZnO surface was from 0 to 10%. The nano ZnO:CNT gas sensors were fabricated by a screen-printing method on alumina substrates. The structural and morphological properties of the ZnO:CNT sensing materials were investigated by XRD, EDS, and SEM. The XRD patterns revealed that nano ZnO:CNT powders with a wurtzite structure were grown with (1 0 0), (0 0 2), and (1 0 1) dominant peaks. The size of the ZnO was about 210 nm, as confirmed by SEM images. The sensitivity of the nano ZnO:CNT-based sensors was measured for 5 ppm of $H_2S$ gas at room temperature by comparing the resistance in air with that in target gases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.471-474
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• 2000

A flat type microgas sensor was fabricated on the p-type silicon wafer with low stress S $i_3$ $N_4$, whose thickness is 2${\mu}{\textrm}{m}$ using MEMS technology and its characteristics were investigated. W $O_3$thin film as a sensing material for detection of N $O_2$gas was deposited using a tungsten target by sputtering method, followed by thermal oxidation at several temperatures (40$0^{\circ}C$~$600^{\circ}C$) for one hour. N $O_2$gas sensitivities were investigated for the W $O_3$thin films with different annealing temperatures. The highest sensitivity when operating at 20$0^{\circ}C$ was obtained for the samples annealed at $600^{\circ}C$. As the results of XRD analysis, the annealed samples had polycrystalline phase mixed with triclinic and orthorhombic structures. The sample exhibit higher sensitivity when the system has less triclinic structure. The sensitivities, $R_{gas}$ $R_{air}$ operating at 20$0^{\circ}C$ to 5 ppm N $O_2$of the sample annealed at $600^{\circ}C$ were approximately 90. 90.

• Journal of the Korea Institute of Military Science and Technology
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• v.27 no.1
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• pp.24-30
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• 2024

The gas-gun test is a experimental approach employed to validate the operational or structural stability when subjected to the impact energy encountered during launch or target collision. Predicting the outcomes of the gas-gun test has traditionally relied on empirical knowledge, due to numerous factors such as the bird assembly's shape, weight, material, and flight velocity. However, due to the nonlinearity and complex interactions between these variables, numerous tests are necessary to identify the necessary requirements, resulting in significant expense and time consumption during the process. The objective of this study is to forecast the variations in impact energy in future tests by developing a numerical model and analysis that aligns with the test outcomes, utilizing the ABAQUS Explicit. The outcome of the numerical analysis produced a framework that anticipates the peak g and the duration of the actual gas-sun test results, throughout post-processing techniques using FFT and LPF filters.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1555-1557
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• 2004

The Pt-doped $SnO_2$ thin film for CO sensor applications obtained by RF sputtering from a target of the same compound in an Ar-$O_2$ atmosphere. Pt-SnO2-SiC Schottky diode detection of CO gas Cause the remarkable change in electrical resistivity of the semiconductor. the good gas sensitivity is shown when annealing condition is 600$^{\circ}C$, 1hr in RTP and detected temperature is 350$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.192-192
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• 2009

AZO films were prepared by $Ar:H_2$ gas RF magnetron sputtering system with a AZO (2wt% $Al_2O_3$) ceramic target at a low temperature of $100^{\circ}C$. To investigate the influence of $H_2$ flow ratio on the properties of AZO films, $H_2$ flow ratio was changed from 0.5% to 2%. As a result, the AZO films deposited with 1% $H_2$ addition showed electrical properties with a resistivity of $5.06{\times}10^{-3}{\Omega}cm$. The spectrophotometer-measurements showed the transmittance of 86.5% was obtained by the film deposited with $H_2$ flow ratio of 1% in the range of 940nm for GaAs/GaAlAs LED.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.306.2-306.2
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• 2016

Niobium oxide thin films were synthesized by reactive rf magnetron sputtering. The target was metallic niobium with 2 inch in diameter and the substrate was n-type Si wafer. To control the surface properties of the films, Nb oxide thin films were obtained at various mixing ratios of argon and oxygen gases. Nb oxide thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The result of alpha step showed that the thickness of Nb oxide thin films were decreased with increasing the oxygen gas ratios. SEM images showed that the granular morphology was formed at 0% of oxygen gas ratio and then disappeared at 20 and 75% of oxygen gas ratio. The amorphous Nb oxide was observed by XRD at all films. The oxidation state of Nb and O were studied with high resolution Ni 2p and O 1s XPS spectra. And the change in the chemical environment of Nb oxide thin films was investigated by XPS with Ar+ sputtering.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.283.1-283.1
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• 2016

Tin Oxide(SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. It would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. In addition, SnO2 is commonly used as gas sensors. To fabricate high quality epitaxial SnO2 thin films, a powder sputtering method was used, in contrast to typical sputtering technique with sintered target. Single crystalline sapphire(0001) substrates were used. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using X-ray diffraction, scanning electron microscopy, and atomic force microscopy measurements. We found that the strain evolution of the samples was highly affected by gas environment and growth rate, resulted in the delamination under O2 environment.