• 제목/요약/키워드: Gas phase sulfurization

검색결과 2건 처리시간 0.016초

Morphology-Controlled WO3 and WS2 Nanocrystals for Improved Cycling Performance of Lithium Ion Batteries

  • Lim, Young Rok;Ko, Yunseok;Park, Jeunghee;Cho, Won Il;Lim, Soo A;Cha, EunHee
    • Journal of Electrochemical Science and Technology
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    • 제10권1호
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    • pp.89-97
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    • 2019
  • As a promising candidate for anode materials in lithium ion battery (LIB), tungsten trioxide ($WO_3$) and tungsten disulfide ($WS_2$) nanocrystals were synthesized, and their electrochemical properties were comprehensibly studied using a half cell. One-dimensional $WO_3$ nanowires with uniform diameter of 10 nm were synthesized by hydrothermal method, and two-dimensional (2D) $WS_2$ nanosheets by unique gas phase sulfurization of $WO_3$ using $H_2S$. $WS_2$ nanosheets exhibits uniformly 10 nm thickness. The $WO_3$ nanowires and $WS_2$ nanosheets showed maximum capacities of 552 and $633mA\;h\;g^{-1}$, respectively, after 100 cycles. Especially, the capacity of $WS_2$ is significantly larger than the theoretical capacity ($433mA\;h\;g^{-1}$). We also examined the cycling performance using a larger size $WO_3$ and $WS_2$ nanocrystals, showing that the smaller size plays an important role in enhancing the capacity of LIBs. The larger capacity of $WS_2$ nanosheets than the theoretical value is ascribed to the lower charge transfer resistance of 2D nanostructures.

황화급속열처리를 이용한 SnS 박막성장 및 온도의존성 연구 (Study of Growth and Temperature Dependence of SnS Thin Films Using a Rapid Thermal Processing)

  • 심지현;김제하
    • 한국전기전자재료학회논문지
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    • 제29권2호
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    • pp.95-100
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    • 2016
  • We fabricated a tin sulfide (SnS) layer with Sn/Mo/glass layers followed by a RTP (rapid thermal processing), and studied the film growth and structural characteristics as a function of annealing temperature and time. The elemental sulfur (S) was cracked thermally and applied to form SnS polycrystalline film out of the Sn percursor at pre-determined pressures in the RTP tube. The sulfurization was done at the temperature from $200^{\circ}C$ to $500^{\circ}C$ for a time period of 10 to 40 min. At ${\leq}300^{\circ}C$, 20 min., p-type SnS thin films was grown and showed the best composition of at.% of [S]/[Sn] $${\sim_=}$$ 1 and [111] preferred orientation as investigated from using XRD (X-ray diffraction) analysis and EDS (energy dispersive spectroscopy) and SEM (scanning electron microscopy), and optical absorption by a UV-VIS spectrometer. In this paper, we report the details of growth characteristics of single phase SnS thin film as a function of annealing temperature and time associated with the pressure and ambient gas in the RTP tube.