• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Journal of the Korean Applied Science and Technology
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• v.28 no.1
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• pp.57-63
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• 2011

Polymer electrolyte membrane fuel cell (PEMFC) performance degrades when hydrogen sulfide ($H_2S$) is present in the fuel hydrogen gas; this is referred to as $H_2S$ poisoning. This paper reveals $H_2S$ poisoning on PEMFC by measuring electrical performance of single cell FC under various operating conditions. The severity of $H_2S$ poisoning depended on $H_2S$ concentration under best operating conditions($65^{\circ}C$ of cell temperature and 100% of anode humidification). $H_2S$ adsorption occured on the surface of catalyst layer on MEA, but not on the gas diffusion layer(GDL) by analyzing SEM/EDX data. In addition, MEA poisoning by $H_2S$ was cumulative but reversible. After poisoning for less than 150 min, performance of PEMFC was recovered up to 80% by just inert nitrogen gas purging.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.691-695
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• 2002

A low temperature anode-supported tubular solid oxide fuel cell was developed. The anode-supported tube was fabricated using extrusion process. Then the electrolyte layer and the cathode layer were coated onto the anode tube by slurry dipping process, subsequently. The anode tube and electrolyte were co-fired at $140^{\circ}C$, and the cathode was sintered at $1200^{\circ}C$. The thickness and gas permeability of the electrolyte depended on the number of coating and the slurry concentration. Anode-supported tube was satisfied with SOFC requirements, related to electrical conductivity, pore structure, and gas diffusion limitations. At operating temperature of $800^{\circ}C$, open circuit voltage of the cell with gastight and dense electrolyte layer was 1.1 V and the cell showed a good performance of 450 mW/$\textrm{cm}^2$.

• Composites Research
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• v.37 no.1
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• pp.40-45
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• 2024

In this research, we introduce a novel approach that employs a 3D convolutional neural network (CNN) model to predict the permeability of Gas Diffusion Layers (GDLs). For training the model, we create an artificial dataset of GDL representative volume elements (RVEs) by extracting morphological characteristics from actual GDL images obtained through X-ray tomography. These morphological attributes involve statistical distributions of porosity, fiber orientation, and diameter. Subsequently, a permeability analysis using the Lattice Boltzmann Method (LBM) is conducted on a collection of 10,800 RVEs. The 3D CNN model, trained on this artificial dataset, well predicts the permeability of actual GDLs.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.349-358
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• 1995

The ceramic composite membrane was synthesized by thermal oxidation after evaporation of Al on the support prepared by slip casting process. Oxidation was performed at $700^{\circ}C$ and 80$0^{\circ}C$ under dry oxygen atmosphere. It was considered as optimum oxidation condition that the membrane showed a knudsen behaviro. A further oxidation resulted in an increase of gas permeability because top layer became densified. Then, a multi-layered composite membrane was synthesized through a sol-gel method, evaporation and thermal oxidation of Al coating processes. While the membrane was thermally stable up to 80$0^{\circ}C$, gas permeability was rapidly decreased even at a slight amount of deposition of Al.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1159-1160
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• 2006

For pure Molybdenum carburized in mixed gases of argon and carbon monoxide, microstructural observations were carried out. X-ray diffraction analysis for carburized specimens revealed that brittle ${\alpha}-Mo_2C$- layer hardly formed in the case of low carbon monoxide concentration. Fracture strength of the specimen carburized at 1673 K for 16 h is about 550 MPa higher than that of the un-carburized specimen. SEM observation revealed that with increasing carburizing temperature, the region demonstrating a transgranular fracture mode progressed towards the center of specimen. This result means that the grain boundaries were strengthened by the grain boundary diffusion of carbon and the strength of grain boundaries exceeded that of grain itself.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1867-1872
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• 2018

This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at $350^{\circ}C$ for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at $250^{\circ}C$) and CO (at $200^{\circ}C$) gases in comparison with the undoped samples.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.519-523
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• 2013

When atomic layer deposition (ALD) is performed on a porous material by using an organometallic precursor, minimum exposure time of the precursor for complete coverage becomes much longer since the ALD is limited by Knudsen diffusion in the pores. In the previous report by Min et al. (Ref. 23), shrinking core model (SCM) was proposed to predict the minimum exposure time of diethylzinc for ZnO ALD on a porous cylindrical alumina monolith. According to the SCM, the minimum exposure time of the precursor is influenced by volumetric density of adsorption sites, effective diffusion coefficient, precursor concentration in gas phase and size of the porous monolith. Here we modify the SCM in order to consider undesirable adsorption of byproduct molecules. $TiO_2$ ALD was performed on the cylindrical alumina monolith by using titanium tetrachloride ($TiCl_4$) and water. We observed that the byproduct (i.e., HCl) of $TiO_2$ ALD can chemically adsorb on adsorption sites, unlike the behavior of the byproduct (i.e., ethane) of ZnO ALD. Consequently, the minimum exposure time of $TiCl_4$ (~16 min) was significantly much shorter than that (~71 min) of DEZ. The predicted minimum exposure time by the modified SCM well agrees with the observed time. In addition, the modified SCM gives an effective diffusion coefficient of $TiCl_4$ of ${\sim}1.78{\times}10^{-2}\;cm^2/s$ in the porous alumina monolith.

• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.257-264
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• 1994

The objectives of this study were to develop the low pressure chemical vapor deposition(LPCVD) process of SiC and to fabricate pure and dense SiC layer onto graphite substrate at low temperature. The deposition experiments were performed using the MTS-H2 system (30 torr) in the deposition temperature ranging from 100$0^{\circ}C$ to 120$0^{\circ}C$. The deposition rate of SiC was increased with the temperature. The rate controlling step can be classified from calculated results of the apparent thermal activation energy as follows; surface reaction below 110$0^{\circ}C$ and gas phase diffusion through a stagnant layer over 110$0^{\circ}C$. The deposited layer was $\beta$-SiC with a preferred orientation of (111) and the strongly faceted SiC deposits were observed over 115$0^{\circ}C$.