• Journal of Korean Vacuum Science & Technology
• /
• 제5권2호
• /
• pp.47-51
• /
• 2001

To obtain high remnant polarization and good crystalinity of ferroelectric thin films in non-volatile memory devices, the high temperature treatment in oxygen ambient is inevitable. Severe problems that occur in this process are oxygen diffusion into substrate, oxidation of electrode and buffer layer, degradation of microstructure and so on. We made ruthenium dioxide thin film by reactive sputtering with oxygen and argon mixture atmosphere. Comparing quantitatively the core-level spectra of Ru and RuO$_2$ obtained by x-ray photoelectron spectroscopy(XPS), we found that chemical state of RuO$_2$ is very stable and of good resistance to oxygen diffusion and oxidation of adjacent layers. It opens the use of RuO$_2$ thin film as a multifunctional layer of good conducting electrode and resistive barrier for the diffusion and the oxidation. We also suggest a correct understanding of Ru 3d core-level spectrum for RuO$_2$ based on the scheme of final state screening and charge transfer satellites.

• 센서학회지
• /
• 제13권3호
• /
• pp.195-198
• /
• 2004

For a diffusion barrier against copper, tantalum nitride films have been deposited on $SiO_{2}$ by atomic layer deposition (ALD), using PEMAT(Pentakis(ethylmethylamino)tantalum) and $NH_{3}$ as precursors, Ar as purging gas. The deposition rate of TaN at substrate temperature $250^{\circ}C$ was about $0.67{\AA}$ per one cycle. The stability of TaN films as a Cu diffsion barrier was tested by thermal annealing for 30 minutes in $N_{2}$ ambient and characterized through XRD, sheet resistance, and C-V measurement(Cu($1000{\AA}$)/TaN($50{\AA}$)/$SiO_{2}$($2000{\AA}$)/Si capacitor fabricated), which prove the TaN film maintains the barrier properties Cu below $400^{\circ}C$.

• 대한기계학회논문집B
• /
• 제33권9호
• /
• pp.688-698
• /
• 2009

Using the multi-dimensional, multi-phase, nonisothermal Polymer Electrolyte Fuel Cell (PEFC) model presented in Part I, the effects of land/channel flow-field on temperature and liquid saturation distributions inside PEFCs are investigated in Part II. The focus is placed on exploring the coupled water transport and heat transfer phenomena within the nonisothermal and two-phase zone existing in the diffusion media (DM) of PEFCs. Numerical simulations are performed varying the land and channel widths and simulation results reveal that the water profile and temperature rise inside PEFCs are considerably altered by changing the land and channel widths, which indicates that oxygen supply and heat removal from the channel to the land regions and liquid water removal from the land toward the gas channels are key factors in determining the water and temperature distributions inside PEFCs. In addition, the adverse liquid saturation gradient along the thru-plane direction is predicted near the land regions by the numerical model, which is due to the vapor-phase diffusion driven by the temperature gradient in the nonisothermal two-phase DM where water evaporates at the hotter catalyst layer, diffuses as a vapor form and then condenses on the cooler land region. Therefore, the vapor phase diffusion exacerbates DM flooding near the land region, while it alleviates DM flooding near the gas channel.

• 전기화학회지
• /
• 제11권4호
• /
• pp.273-283
• /
• 2008

고분자 전해질 연료전지의 구성요소인 기체 확산층(Gas Diffusion Layer)은 반응물을 채널에서 MEA로 전달하며 동시에 생성물을 MEA에서 채널로 전달하는 역할을 한다. 기체 확산층의 기체 투과도가 클수록 기체 확산층을 통과하는 반응기체의 양이 증가하여 고분자전해질 연료전지 성능이 향상되며 물질전달과 함께 열전달이 이루어지기 때문에 생성열에 의한 MEA의 온도상승을 억제해준다. 본 연구에서는 기체 확산층의 기체투과도를 달리하여 전기화학 반응과 열 생성을 고려한 3차원 수치해석 모델을 통해 동일 반응면적을 가지는 직선형 채널과 곡사형 채널에 대해 열전달 및 물질전달 특성을 분석하였다. 수치해석 결과 직선형 채널의 경우 곡사형 채널에 비해 기체 확산층의 기체투과도에 따른 성능 변화가 크지 않았다. 이러한 이유는 직선형 채널에서 주된 물질전달은 확산에 의해 이뤄지기 때문이다. 곡사형 채널의 경우 기체투과도가 높을수록 대류에 의한 물질전달로 원활한 물질전달이 이뤄졌기 때문에 연료전지 성능이 증가 되었으며 원활한 물질전달이 열전달을 촉진하여 MEA의 온도를 낮추었다. 또한 곡사형 채널에서는 기체투과도가 작아질수록 확산에 의한 물질 및 열전달 특성을 보여주었다.

• 열처리공학회지
• /
• 제7권4호
• /
• pp.318-327
• /
• 1994

According to conventional nitriding of tool steels, it was very difficult to produce a high surface hardness. This study has been conducted to investigate the influence of initial structures on the nitriding characteristics of tool steels in gas-nitrided for the improvement in surface hardness. The specimens (SACM645, STD61 steels) have been quenching and tempering at various temperature and then gas-nitrided for 30, 45 and 60hr at 500, 530 and $550^{\circ}C$ respectively in gasatmosphere of 30%$NH_3-70%N_2$ As hardness of initial structure was higher, the nitriding layer was deeper and hardness of the nitriding layer was higher. Deeper nitriding layers was due to higher diffusion rate by fine initial microstructure. Also the reason of high surface hardness was associated with formation of dispersed fine carbonitrides of nitrides.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2008년도 추계학술대회B
• /
• pp.3140-3141
• /
• 2008

The output power efficiency of the fuel cell system depends on the demanded current, stack temperature, air excess ratio, hydrogen excess ratio and inlet air humidity. Thus, it is necessary to determine the optimal operation condition for maximum power efficiency. In this paper, we developed a dynamic model of fuel cell system which contains mass flow model, diffusivity gas layer model, membrane hydration and electrochemistry model. In order to determine the maximum output power and minimum use of hydrogen in a certain power condition, response surface methodology (RSM) optimization based on the proposed PEMFC stack model is presented. The results provide an effective method to optimize the operation condition under varied situations.

• 한국자기학회지
• /
• 제15권4호
• /
• pp.226-230
• /
• 2005

본 연구에서는 스핀밸브 구조에서 하지층으로 많이 사용되고 있는 Ta 층에 질소를 첨가하여 질소량에 따른 자기적 특성과 열처리 결과를 비교 검토하였다. 또한 하지층에 질소를 첨가하여 확산 방지막으로서 역할과 기판과 하지층과의 접착력을 측정하여 비교하였다. 사용된 스핀밸브는 Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta 구조이다. Ta 박막에 비해 TaN 박막의 질소량이 증가할수록 증착률은 감소하였고, 비저항과 표면 거칠기는 증가하였다. 고온에서 열처리 후 측정한 XRD 결과를 보면 Si/Ta 박막에서는 규소화합물이 생성된 반면 Si/TaN 박막에서는 규소화합물을 발견할 수 없었다. 자기저항비(MR)와 교환결합자장($H_{ex}$)은 질소량이 4.0 sccm 이상에서는 감소하였다. 열처리 결과 자기저항비는 하지층이 Ta인 시편과 질소량이 4.0 sccm까지 혼합된 TaN 시편은 $200^{\circ}C$까지는 약 $0.5\%$ 정도 증가하다가 감소하였다. 기판과 하지층과의 접착력을 측정한 결과 Ta 박막보다 질소량이 8.0 sccm인 TaN 박막인 경우 약 2배 강한 접착력을 보였다. 본 연구 결과에 의하면 하지층 증착 시 아르곤 가스에 3.0 sccm 정도의 질소 가스를 혼합하여 사용하면 자기적 특성에 크게 영향을 주지 않으면서 확산 방지막, 접착력 향상등의 이점을 얻을 수 있으리라 사료된다.

• 한국전기전자재료학회논문지
• /
• 제11권12호
• /
• pp.1091-1098
• /
• 1998

Thermal stability of the electroless deposited Cu thin film was investigated. Cu/TaN/Si multilayer was fabricated by electroless-depositing Cu thin layer on TaN diffusion barrier layer which was deposited by MOCVD on the Si substrate, and was annealed in $H_2$ ambient to investigate the microstructure of Cu film with a post heat-treatment. Cu thin film with good adhesion was successfully deposited on the surface of the TaN film by electroless deposition with a proper activation treatment and solution control. Microstructural property of the electroless-deposited Cu layer was improved by a post-annealing in the reduced atmosphere of $H_2$ gas up to $600^{\circ}C$. Thermal stability of Cu/TaN/Si system was maintained up to $600^{\circ}C$ annealing temperature, but the intermediate compounds of Cu-Si were formed above $650^{\circ}C$ because Cu element passed through the TaN layer. On the other hand, thermal stability of the Cu/TaN/Si system in Ar ambient was maintained below $550^{\circ}C$ annealing temperature due to the minimal impurity of $O_2$ in Ar gas.

• 대한기계학회논문집
• /
• 제14권5호
• /
• pp.1234-1243
• /
• 1990

본 연구에서는 선회가 없는 중심기류와 주위기류의 난류 전단층에서 형성되는 난류확산화염의 천이영역(transition region)에 주목하여 전단층내의 혼합작용과 화염 구조와의 상호작용을 규명하기 위해 거시적 및 순간적인 화염구조에 대해 실험적으로 조사 연구한 결과를 보고한다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.377-377
• /
• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.