• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1694-1697
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• 2002

KEPCO is planing to adopt a preventive diagnostic system to obtain the reliability of transformer and GIS in 765kV substation. KEPRI has developed the preventive diagnostic system for 765kV substation since 1997. We used various sensors and fault detecting devices such as a dissolved gas analyzer in oil, a ultrasonic detector and LA leakage current detector, etc., and carried out adaptation tests at the both a laboratory and a site. We developed a data acquisition system, a communication control unit and a server system as well. Furthermore, monitoring program and diagnostic expert system were also developed. This paper describes the preventive diagnostic system for 765kV Sin-Ga-Pyong and Sin-Tae-Baek substations which will be operated from 2004.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.196-197
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• 2010

NAND형 charge trap flash (CTF) non-volatile memory (NVM) 소자가 30nm node 이하로 고집적화 되면서, 기존의 SONOS형 CTF NVM의 tunnel barrier로 쓰이는 SiO2는 direct tunneling과 stress induced leakage current (SILC)등의 효과로 인해 data retention의 감소 등 물리적인 한계에 이르렀다. 이에 따라 개선된 retention과 빠른 쓰기/지우기 속도를 만족시키기 위해서 tunnel barrier engineering (TBE)가 제안되었다. TBE NVM은 tunnel layer의 전위장벽을 엔지니어드함으로써 낮은 전압에서 전계의 민감도를 향상 시켜 동일한 두께의 단일 SiO2 터널베리어 보다 빠른 쓰기/지우기 속도를 확보할 수 있다. 또한 최근에 각광받는 high-k 물질을 TBE NVM에 적용시키는 연구가 활발히 진행 중이다. 본 연구에서는 Si3N4와 HfAlO (HfO2 : Al2O3 = 1:3)을 적층시켜 staggered의 새로운 구조의 tunnel barrier Capacitor를 제작하여 전기적 특성을 후속 열처리 온도와 방법에 따라 평가하였다. 실험은 n-type Si (100) wafer를 RCA 클리닝 실시한 후 Low pressure chemical vapor deposition (LPCVD)를 이용하여 Si3N4 3 nm 증착 후, Atomic layer deposition (ALD)를 이용하여 HfAlO를 3 nm 증착하였다. 게이트 전극은 e-beam evaporation을 이용하여 Al를 150 nm 증착하였다. 후속 열처리는 수소가 2% 함유된 질소 분위기에서 $300^{\circ}C$와 $450^{\circ}C$에서 Forming gas annealing (FGA) 실시하였고 질소 분위기에서 $600^{\circ}C{\sim}1000^{\circ}C$까지 Rapid thermal annealing (RTA)을 각각 실시하였다. 전기적 특성 분석은 후속 열처리 공정의 온도와 열처리 방법에 따라 Current-voltage와 Capacitance-voltage 특성을 조사하였다.

• Tribology and Lubricants
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• v.29 no.3
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• pp.180-185
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• 2013

The purpose of this study was to analyze the tribological characteristics of the Electronic control suspension System in a car. In the first example, the cilp used to attach the front electronic control suspension(ECS) system's control actuator was fastened very tightly. Thus, the wire was cut because of continual rotation of the shock-up shover piston rod used to adjust the height of the car. This verified the disconnection phenomenon where wire damaged makes it impossible for the ECS system to send signal to the actuator. The second example, involved a minute hole that allowed gas to leak from the ECS system. As a result, the height of the car verified the down phenomenon. In the third example, the resistance of a wire measured at $0.21{\Omega}$, when the G sensor was disconnected from the system. This verified the system shutdown and lighting of the ECS warning lamp because of body interference caused by a slight pressure on the battery cover. Therefore, quality control is always necessary to ensure safety and durability of a car.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.4
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• pp.311-316
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• 2010

Defects positioning of underground gas pipelines using MFL(magnetic flux leakage) inspection which is one of non-destructive evaluation techniques is proposed in this paper. MFL signals acquired from MFL PIG(pipeline inspection gauge) have nonlinearity and distortion caused by various external disturbances. SQI(self quotient image), a compensation technique for nonlinearity and distortion of MFL signal, is used to correct positioning of pipeline defects. Through the experiments using artificial defects carved in the KOGAS pipeline simulation facility, it is found that the performance of proposed defect detection is greatly improved compared to that of the conventional DCT(discrete cosine transform) coefficients based detection.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.124-127
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• 2016

Humidity calibration for a temperature-stable quartz oscillator (TSQO) was investigated to exclude the influences of relative humidity on the TSQO output in order to use the corresponding devices outdoors. The TSQO output is a voltage that is inversely proportional to the electric impedance of the quartz oscillator, which depends on the viscosity and density of the measured gas. The TSQO output was humidity calibrated using its humidity dependence, which was obtained by varying the relative humidity (RH) from 0 to 100 RH% while other conditions were kept constant. The humidity dependencies of the TSQO output were fit by a linear function. Subtracting the change in the TSQO output induced by the change in humidity, calculated with the function from the experimentally measured TSQO output for a range of 0-100RH%, eliminated the influence of humidity on the TSQO output. The humidity calibration succeeded in reducing the fluctuations of the TSQO output from 0.4-3% to 0.1-0.3% of the average values for a range of 0-100RH%, at constant temperatures. The necessary stability of the TSQO output for application in hydrogen sensors was below one-third of the change observed for a hydrogen leakage of 1 vol.% hydrogen concentration, corresponding to 0.33% of the change in each background. Therefore, the results in this study indicate that the present humidity calibration effectively suppresses the influence of humidity, for the TSQO output for use as an outdoor hydrogen sensor.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1559-1561
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• 1994

At present, the principle of puffer action in high current interruption is adopted in almost of the EHV(Extra High Voltage) and UHV(Ultra High Voltage) GCB(Gas Circuit Breakers). The thermal interruption capability of these GCBs critically depends on the pressure rise in the puffer cylinder at current zero. The pressure rise in the puffer cylinder depends on the puffer cylinder volume, flow passage and leakage area in the interrupter, stroke curve etc. Recently commercial CFD(Computational Fluid Dynamics ) packages have been widely adopted to calculate the pressure distribution in the interrupter. However, there are still several problems with it, e.g. very expensive price, moving boundary problem, computation time, difficulty in using the package etc. Thus, the calculation of the puffer cylinder pressure in simple and relatively correct method is essential in early stage of GCB design. In these paper, the model ing technique and computed results for EHV class GCB (HICO, 145kV 40kA and 362kV 40kA GCB) are presented and compared with available measured results.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.6
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• pp.209-215
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• 2015

Following the semiconductor industry's growing, various types of toxic gases and caustic chemicals, HF(Hydrofluoric acid), HCI (Hydochloric acid), $H_2O_2$ (Hydrogen peroxide), $H_2SO_4$ (Sulfuric acid), and Piranha, were using on the semiconductor manufacturing process. Therefore many gas leakage accidents that produce huge losses of lives were caused by the processes. This research deeply considers two basic solutions that the necessity of MSDS education on university for reducing damage of lives and protecting life from chemical leak accidents such as a HF accident in Gumi, Korea and the use of GHS, REACH and the comprehension of propriety about using MSDS for keeping safety from conflagrations by released poison chemical materials.

• Proceedings of the KIEE Conference
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• 2005.07e
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• pp.55-57
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• 2005

Along with the development of the industrial society, as the transportation of water which is the indirect capital of society and petroleum, gas, etc used as energy sources is rapidly increased. the underground material is being expanded. Like this, the pipes laid under the ground not only bring the corrosion to the land circumstances to reduce the life of the pipes, but also raise the social problem of leakage accidents and the economic loss by Pin Hole. By reason of this, for the purpose of protecting the corrosion of the underground material, we are constructing and operating the electrolytic protection facilities. In case of a region of which specific resistance is high, however, we are not keeping proper protection potential(that is -850mV) to get protection effects. In this study, for the water pipes that under-voltage phenomena occur in the protection potential, we made a spot survey on the under-voltage section and normal-voltage section, compared, analyzed each of the contents and examined the under-voltage causes of the protection potential.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.13-16
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• 2012

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.