• 제목/요약/키워드: Gas Density

검색결과 2,193건 처리시간 0.03초

Applications of Plasma Modeling for Semiconductor Industry

  • Efremov, Alexandre
    • E2M - 전기 전자와 첨단 소재
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    • 제15권9호
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    • pp.10-14
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    • 2002
  • Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure flow rate input power density) and a various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimizations.

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양극산화에 의한 다공성 알루미나 막의 기체투과 특성 (Gas Permeation Characteristics of Porous Alumina Membrane Prepared by Anodic Oxidation)

  • 함영민
    • 환경위생공학
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    • 제13권3호
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    • pp.72-78
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    • 1998
  • For investigation into gas permeation characteristics, the porous alumina membrane with asymmetrical structure, having upper layer with 10 nanometer under of pore diameter and lower layer with 36 nanometer of pore diameter, was prepared by anodic oxidation using DC power supply of constant current mode in an aqueous solution of sulfuric acid. The aluminium plate was pre-treated with thermal oxidation, chemical polishing and electrochemical polishing before anodic oxidation. Because the pore size depended upon the electrolyte, electrolyte concentration, temperature, current density, and so on, the the membranes were prepared by controling the current density, as a very low current density for upper layer of membrane and a high current density for lower layer of membrane. By control of current quantity, the thicknesses of upper layer of membranes were about $6{\;}{\mu}m$ and the total thicknesses of membranes were about $80-90{\;}{\mu}m$. We found that the mechanism of gas permeation depended on model of the Knudsen flow for the membrane prepared at each condition.

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高分子物質의 熱分解에 關한 硏究 (第4報) Polyethylene 및 Polypropylene의 熱分解에 關하여 (On the Pyrolysis of Polymers IV. Pyrolysis of Polythylene and Polypropylene)

  • 성좌경;노익삼;김정엽;장성봉
    • 대한화학회지
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    • 제7권2호
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    • pp.122-127
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    • 1963
  • Pyrolysis fo polyethylene and polypropylene has been studied in order to clarify the mechanism of chain scission and effect of oxygen on degradation. Rate of weight decrease was measured under nitrogen and air atmosphere at constant temperature for the samples of high density polyethylene, low density polyethylene and isotactic polypropylene, and then gaseous hydrocarbons produced from pyrolysis were analysed by gas chromatography. Although there is little substantial difference between composition of hydrocarbon gases from pyrolysis of high density polyethylene and low density polyethylene except some difference in quantity of total gas produced, gas composition from polypropylene pyrolysis differs from that of polyethylene pyrolysis. Gases from pyrolysis under air contain much more unsaturated hydrocarbons than those from pyrolysis under inert gas.

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절연물의열화에 의한 변압기유의 가스분석 (Gas detection of transformer oil according to degradation characteristic of insulation material)

  • 황규현;서호준;이석우;이동희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.574-574
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    • 2005
  • To found out the degradation characteristic of transformer insulation, insulation material was depisited into transformer oil and heated. Due to the thermal stress which added to insulation, the density of carbon dioxide which included in transformer oil was mesured by using the gas density detection equipment of gas sensor and air circulation method. As a result, it didn't match with the transformer supervision standard. But it was found that as thermal stress increased, the density of carbon dioxide propertionally increased.

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Analysis of Electron Transport Coefficients in Binary Mixtures of TEOS Gas with Kr, Xe, He and Ne Gases for Using in Plasma Assisted Thin-film Deposition

  • Tuan, Do Anh
    • Journal of Electrical Engineering and Technology
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    • 제11권2호
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    • pp.455-462
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    • 2016
  • The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10−17 V.cm2). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.

N2/NH3/SiH4 유도 결합형 플라즈마의 압력과 혼합가스 비율에 따른 이온 및 중성기체 밀도 분포 (Distribution of Ions and Molecules Density in N2/NH3/SiH4 Inductively Coupled Plasma with Pressure and Gas Mixture Ratio))

  • 서권상;김동현;이호준
    • 전기학회논문지
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    • 제66권2호
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    • pp.370-378
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    • 2017
  • A fluid model of 2D axis-symmetry based on inductively coupled plasma (ICP) reactor using $N_2/NH_3/SiH_4$ gas mixture has been developed for hydrogenated silicon nitride ($SiN_x:H$) deposition. The model was comprised of 62 species (electron, neutral, ions, and excitation species), 218 chemical reactions, and 45 surface reactions. The pressure (10~40 mTorr) and gas mixture ratio ($N_2$ 80~96 %, $NH_3$ 2~10 %, $SiH_4$ 2~10 %) were considered simulation variables and the input power fixed at 1000 W. Different distributions of electron, ions, and molecules density were observed with pressure. Although ionization rate of $SiH_2{^+}$ is higher than $SiH_3{^+}$ by electron direct reaction with $SiH_4$, the number density of $SiH_3{^+}$ is higher than $SiH_2{^+}$ in over 30 mTorr. Also, number density of $NH^+$ and $NH_4{^+}$ dramatically increased by pressure increase because these species are dominantly generated by gas phase reactions. The change of gas mixture ratio not affected electron density and temperature. With $NH_3$ and $SiH_4$ gases ratio increased, $SiH_x$ and $NH_x$ (except $NH^+$ and $NH_4{^+}$) ions and molecules are linearly increased. Number density of amino-silane molecules ($SiH_x(NH_2)_y$) were detected higher in conditions of high $SiH_x$ and $NH_x$ molecules density.

가스확산층을 통과하는 반응가스 우회유동이 고분자 연로전지의 성능에 미치는 영향 (The Effect of a Bypass Flow Penetrating through a Gas Diffusion Layer on Performance of a PEM Fuel Cell)

  • 조중원;안은진;이승보;이원용
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2007년도 추계학술대회 논문집
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    • pp.147-151
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    • 2007
  • A serpentine channel geometry often used in a polymer electrolyte membrane fuel cell has a strong pressure gradient between adjacent channels in specific regions. The pressure gradient helps some amount of reactant gas penetrate through a gas diffusion layer(GDL). As a result, the overall serpentine flow structure is slightly different from intention of a designer. The purpose of this paper is to examine the effect of serpentine flow structure on current density distribution. By using a commercial code, STAR-CD, a numerical simulation is performed to analyze the fuel cell with relatively high aspect ratio active area. To increase the accuracy of the numerical simulation, GDL permeabilities are measured with various compression conditions. Three-dimensional flow field and current density distribution are calculated. For the verification of the numerical simulation results, water condensation process in the cathode channel is observed through a transparent bipolar plate. The result of this study shows that the region of relatively low current density corresponds to that of dropwise condensation in cathode channels.

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펄스형 Nd:YAG 레이저를 이용한 Al의 용접 특성연구 (A study on the pure Al weldability using a pulsed Nd : YAG laser)

  • 김덕현
    • Journal of Welding and Joining
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    • 제11권1호
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    • pp.52-61
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    • 1993
  • Laser welding of ASTM no. 1060 Al plate with a pulsed Nd: YAG laser of 200W average power was performed for end capping of KMRR nuclear fuel elements In this research, we performed basic welding experiments. Firstly, laser output parameters which affect laser welding parameters were studied by changing laser input parameters for effective welding of 1060 Al plates. We found that laser power density and pulse energy are important parameters for smooth bead shape. Secondly, welding parameters which affect weld width-to-depth ratio were studied by changing power density and pulse energy, shielding gas, and defocusing. We found that power density must be higher than 0.3 Mw/cm$^{2}$ pulse energy must be higer than 3 J. travel speed must not exceed 200mm/sec, laser focus must be existed beneath 2-3mm from plate surface and helium is proper shielding gas. Thirdly, we studied the weld defects of Al-1060 such as crack and porosity in lap-joint welding. We designed new welding geometry for crack free welding of Al-1060 plates, and obtained crack free weldment but with lack of fusion. However, with Ti, Zr grain refiner elements, we can weld Al plates without solidification hot crack. Finally, we studied the origin of porosity by changing shielding gas. And we found that porosity was resulted from entrapment of shielding gas by the collapsing keyhole.

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High density plasma etching of MgO thin films in $Cl_2$/Ar gases

  • Xiao, Y.B.;Kim, E.H.;Kong, S.M.;Chung, C.W.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.213-213
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    • 2010
  • Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

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