• Proceedings of the Korea Air Pollution Research Association Conference
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• 2006.04a
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• pp.201-203
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.195.2-195.2
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• 2009

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.06a
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• pp.783-788
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• 2005

This document provides the concerning information of the MEPC Committee and DE sub-Committee of International Maritime Organization in accordance with enforcement of an International Air Pollution Prevention Certificate at May 19 2005years.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2005.11a
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• pp.151-151
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.31-34
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• 2000

It is very important to understand the correlation of between inter layer dielectric(ILD) CMP process and various facility factors supplied to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD CMP process were studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyzed various facilities supplied at supply system. With facility shortage of D.I. water(DIW) pressure, we introduced an adding purified $N_2(PN_2)$ gas in polishing head cleaning station for increasing a cleaning effect. DIW pressure and PN2 gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. We estimated two factors (DIW pressure and PN2 gas) for the improvement of CMP process. Especially, we obtained a uniform planarity in patterned wafer and prohibited more than 90% wafer edge over-polishing. In this study, we acknowledged that facility factors supplied to equipment system played an important role in ILD-CMP process.

• Journal of the Korean Society of Safety
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• v.35 no.6
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• pp.85-92
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• 2020

Wet Scrubber reacts the incoming pollutant gas with cleaning water (water + absorbent) to absorb pollutants and release the clean air to the atmosphere. Wet scrubbers and packed tower scrubbers using this principle are widely used in businesses that emit acid gases. In particular, in the etching process using hydrochloric acid (HCl), alkaline washing water (NaOH) having a pH of about 8 to 11 is used to absorb a large amount of acid gas. However, These salts are attached to the injection nozzle (nozzle), filling material (packing), and the demister (Demister), causing air pollution, human damage, and inoperability due to clogging and acid gas discharge. Therefore, In this study, an improvement plan was proposed to manage the washing water with pH 3~4 acidic washing water. The test method takes samples from the Wet Scrubber flue measurement laboratory twice a month for 1 year. Hydrogen chloride (HCl) concentration (ppm) was measured, and nozzle clogging and scale conditions were measured, compared, and analyzed through a differential pressure gauge and a pressure gauge. As a result of the check, it was visually confirmed that the scale was reduced to 50% or less in the spray nozzle, filler, and demister. In addition, the emission limit of hydrogen chloride in accordance with the Enforcement Regulation of the Air Quality Conservation Act [Annex 8] met 3 ppm or less. Therefore, even if the washing water is operated in an acidic pH range of 3 to 4, it is expected to reduce air pollution and human damage due to clogging of internal parts, and it is expected to reduce maintenance costs such as regular cleaning or replacement of parts.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.06a
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• pp.32-42
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• 2004

Recently, plasma surface-cleaning or surface-etching techniques have been focused in respect of the decontamination of spent or used nuclear parts and equipment. In this study the removal rate of metallic cobalt surface is experimentally investigated via its surface etching rate with a $CF_4-o_2$mixed gas plasma. Experimental results reveal that a mixed etchant gas with about 80% $CF_4$-20% $O_2$ (molar) gives the highest reaction rate and the rate reaches 0.06 ${\mu}m$/min at $380^{\circ}C$ and ion-assisted etching dramatically enhances the surface reaction rate. With a negative 300 V DC bias voltage applied to the substrate, the surface reaction initiation temperature lowers and the rate increases about 20 times at $350^{\circ}C$ and up to 0.43 ${\mu}m$/min at $380^{\circ}C$, respectively. Surface morphology analysis confirms the etching rate measurements. Auger spectrum analysis clearly shows the adsorption of fluorine atoms on the reacted surface. From the current experimental findings and the results discussed in previous studies, mechanistic understanding of the surface reaction, fluorination and/or fluoro-carbonylation reaction, is provided.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1528-1530
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• 1997

As device size shrinks, contamination will increasingly affect the reliability and yield of device. Therefore, contaminants must be removed from the surfaces of Si wafers prior to each process. But it becomes out increasingly difficult to clean silicon surfaces with finer patterns by the conventional wet treatment because of the viscosity and surface tension of solutions. Hence, a damage less dry cleaning process is needed for the silicon surfaces. For the removal of Si native oxide by UV-enhanced dry cleaning. $F_2$ gas and $F_2/H_2$ mixed gas were applied. As a result of analysis, UV-enhnaced $F_2/H_2$ treatment is more suitable than UV-enhanced $F_2$ treatment for removal of native oxide on the surfaces of Si wafers.

• 연구논문집
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• s.33
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• pp.99-109
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.

• Particle and aerosol research
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• v.20 no.2
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• pp.57-68
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• 2024

A silicon carbide (SiC) ceramic filter is an effective component for hot flue gas cleaning because of its high collection efficiency, high thermal shock resistance, and excellent mechanical strength. The effect of molding pressure in the production of SiC granular ceramic filters, on the mechanical strength and filtration performance, was investigated in this work. It was found that the ceramic filters produced at molding pressures less than 20 MPa have low mechanical strength and that this result was caused by weak physical interaction among the ceramic powders due to defects and cracks. On the other hand, the filter quality factor(q_F), which represents filtration performance of filter media, decreased with increasing the molding pressure due to the drastic increase in pressure drop. Ceramic filter performance factor(q_FM), which is the manipulation of maximum mechanical strength and q_F, was introduced to consider both mechanical strength and filtration performance in this study. As a result, molding pressure of 30 MPa was desirable to produce a SiC granular ceramic filter based on q_FM.