• Title/Summary/Keyword: Gas Cleaning

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Investigation of acoustic monitoring on laser shock cleaning process (레이저 충격파 클리닝 공정에서 음향 모니터링에 관한 연구)

  • 김태훈;이종명;조성호;김도훈
    • Laser Solutions
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    • v.6 no.2
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    • pp.27-33
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    • 2003
  • A laser shock cleaning technology is a new dry cleaning methodology for the effective removal of small particles from the surface. This technique uses a plasma shock wave produced by a breakdown of air due to an intense laser pulse. In order to optimize the laser shock cleaning process, it needs to evaluate the cleaning performance quantitatively by using a monitoring technique. In this paper, an acoustic monitoring technique was attempted to investigate the laser shock cleaning process with an aim to optimize the cleaning process. A wide-band microphone with high sensitivity was utilized to detect acoustic signals during the cleaning process. It was found that the intensity of the shock wave was strongly dependent on the power density of laser beam and the gas species at the laser beam focus. As a power density was larger, the shock wave became stronger. It was also seen that the shock wave became stronger in the case of Ar gas compared with air and N$_2$ gas.

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Effect of Process Parameters of UV Enhanced Gas Phase Cleaning on the Removal of PMMA (Polymethylmethacrylate) from a Si Substrate

  • Kwon, Sung Ku;Kim, Do Hyun
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.4
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    • pp.204-207
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    • 2016
  • Experimental study of UV-irradiated O2/H2 gas phase cleaning for PMMA (Polymethylmethacrylate) removal is carried out in a load-locked reactor equipped with a UV lamp and PBN heater. UV enhanced O2/H2 gas phase cleaning removes polymethylmethacrylate (PMMA) better at lower process pressure with higher content of H2. O2 gas compete for UV (184.9 nm) absorption with PMMA producing O3, O(1D) and lower dissociation of PMMA. In our experimental conditions, etching reaction of PMMA at the substrate temperature between 75℃ and 125℃ had activation energy of about 5.86 kcal/mol indicating etching was controlled by surface reaction. Above the 180℃, PMMA removal was governed by a supply of reaction gas rather than by substrate temperature.

A Study on the Cleaning Characteristics according to the process gas of Low-Pressure Plasma (저압 플라즈마 세정가스에 따른 세정특성 연구)

  • Koo, H.J.;Ko, K.J.;Chung, C.K.
    • Clean Technology
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    • v.7 no.3
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    • pp.203-214
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    • 2001
  • A silicon oxide cleaning characteristic and its mechanism were studied in RF plasma cleaning system with various gases such as $CHF_3$, $CF_4$, Argon, oxygen and mixing gas. The experimental parameters - working pressure (100 mTorr), RF power (300 W, 500 W), electrode distance (5cm, 8cm, 11.5cm), cleaning time (90, 180 seconds), gas flow (50 sccm) were fixed to compare cleaning efficiency by gas types. The results were as follows. First, the argon plasma is retaining only physical sputtering effect and etch rate was low. Second, the oxygen plasma showed good cleaning efficiency in electrode distace of 5cm, 300W, 180secs, but surface roughness increased. Third, $CF_4$ Plasma could get the best cleaning efficiency. Fourth, $CHF_3$ plasma could know that addition gas that can lower the CFx/F ratio need. We could not get good cleaning efficiency in case of added argon to $CHF_3$. But, we could get good cleaning efficiency in case added oxygen.

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Fabrication and Characterization of Gas-liquid Hybrid Reactor Equipped with Atmospheric Pressure Plasma (기-액 하이브리드 대기압 플라즈마 반응기 제작 및 특성 분석)

  • Kwon, Heoung Su;Lee, Won Gyu
    • Korean Chemical Engineering Research
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    • v.60 no.3
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    • pp.452-458
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    • 2022
  • Three types of gas-liquid hybrid horizontal, vertical and needle-to-cylinder plasma reactors were fabricated. Through these reactors, a high-efficiency, eco-friendly cleaning concept that generates reactive active species generated in atmospheric plasma discharge and gas-liquid activation reaction of cleaning components through the potential difference within the electrode was presented. As a result of comparing the efficiency for cleaning performance, the needle-to-cylinder type reactor had the best characteristics. Through this study, it was confirmed that the gas-liquid hybrid atmospheric pressure plasma reactor has the potential to be applied to ultra-precision cleaning processes such as semiconductor processes.

PECVD Chamber Cleaning End Point Detection (EPD) Using Optical Emission Spectroscopy Data

  • Lee, Ho Jae;Seo, Dongsun;Hong, Sang Jeen;May, Gary S.
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.5
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    • pp.254-257
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    • 2013
  • In-situ optical emission spectroscopy (OES) is employed for PECVD chamber monitoring. OES is used as an addon sensor to monitoring and cleaning end point detection (EPD). On monitoring plasma chemistry using OES, the process gas and by-product gas are simultaneously monitored. Principal component analysis (PCA) enhances the capability of end point detection using OES data. Through chamber cleaning monitoring using OES, cleaning time is reduced by 53%, in general. Therefore, the gas usage of fluorine is also reduced, so satisfying Green Fab challenge in semiconductor manufacturing.

A novel surface cleaning process using laser-induced breakdown of liquid (액체의 레이저 유기 절연파괴를 이용한 신개념 표면 세정 공정)

  • Jang, Deok-Suk;Lee, Jong-Myoung;Kim, Dong-Sik
    • Laser Solutions
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    • v.12 no.4
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    • pp.17-25
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    • 2009
  • The surface cleaning method based on the laser-induced breakdown (LIB) of gas and subsequent plasma and shock wave generation can remove small particles from solid surfaces. In the laser shock cleaning (LSC) process, a high-power laser pulse induces optical breakdown of the ambient gas above the solid surface covered with contaminant particles. The subsequently created shock wave followed by a high-speed flow stream detaches the particles. In this work, a novel surface cleaning process using laser-induced breakdown of liquid is introduced and demonstrated. LIB of a micro liquid jet increases the shock wave intensity and thus removes smaller particle than the conventional LSC method. Experiments demonstrate that the cleaning force and cleaning efficiency are also increased significantly by this method.

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Research Progress on NF3 Substitute Gas of PECVD Chamber Cleaning Process for Carbon Neutrality (반도체·디스플레이 탄소중립을 위한 PECVD 챔버세정용 NF3대체가스 개발연구)

  • Seyun Jo;Sang Jeen Hong
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.4
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    • pp.72-75
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    • 2023
  • Carbon neutrality has been emerged as important mission for all the manufacturing industry to reduce energy usage and carbon emission equivalent. Korean semiconductor and display manufacturing industries are also in huge interest by minimize the energy usage as well as to find a less global warming product gases in both etch and cleaning. In addition, Korean government is also investing long term research and development plan for the safe environment in various ways. In this paper, we revisit previous research activities on carbon emission equivalent and current research activities performed in semiconductor process diagnosis research center at Myongji University with respect to the reduction of NF3 usage for the PECVD chamber cleaning, and we present the analytical result of the exhaust gas with residual gas analysis in both 6 inches and 12 inches PECVD equipment. The presented result can be a reference study of the development of new substitution gas in near future to compare the cleaning rate of the silicon oxide deposition chamber.

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A Study on the Treatment Performance of Coalescer to Treat Exhaust Gas Cleaning Water (콜레이서를 이용한 배기가스 세정수 처리 성능에 관한 연구)

  • Ha, Shin-Young;Kim, In-Soo
    • Journal of Navigation and Port Research
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    • v.40 no.1
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    • pp.1-6
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    • 2016
  • This study was conducted on a circulation system which can recycle waste water from EGCS(Exhaust Gas Cleaning System) using a wet scrubber that is used to treat air pollutants from ships. Though we developed a water treatment system that could remove effectively particulate matters and dispersed oil included in cleaning water for Ship Exhaust Gas Recycle System(DePM & DeSOx), we found that it is difficult to treat minutely dispersed oil only by means of centrifugal-typed purifier. Therefore, to this system, we applied a coalescer that coalesces emulsified minute oil particles in the 2nd phase of dispersion state after being filtered through the centrifugal-typed purifier. After we treated cleaning water drained out of Ship Exhaust Gas Recycle System(DePM & DeSOx) by using both purifier and coalescer, we found that particulate matters and dispersed oil were removed more than 55% and 99%, respectively, in comparison with those contained in cleaning water influent. Putting the results together, we conclude that the treated cleaning water can be recycled as normal cleaning water if this cleaning water treatment system is employed by the wet cleaning tower system for the reduction of air pollutants from ships.

Investigation of PEG(polyethyleneglycol) Removal Mechanism during UV/O2 Gas Phase Cleaning for Silicon Technology (UV/O2 가스상 세정을 이용한 실리콘 웨이퍼상의 PEG 반응기구의 관찰)

  • Kwon, Sung-Ku;Kim, Do-Hyun;Kim, Ki-Dong;Lee, Seung-Heun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.11
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    • pp.985-993
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    • 2006
  • An experiment to find out the removal mechanism of PEG(polyethyleneglycol) by using UV-enhanced $O_2$ GPC (gas phase cleaning) at low substrate temperature below $200^{\circ}C$ was executed under various process conditions, such as substrate temperature, UV exposure, and $O_2$ gas. The possibility of using $UV/O_2$ GPC as a low-temperature in-situ cleaning tool for organic removal was confirmed by the removal of a PEG film with a thickness of about 200 nm within 150 sec at a substrate temperature of $200^{\circ}C$. Synergistic effects by combining photo-dissociation and photo oxidation can only remove the entire PEG film without residues within experimental splits. In $UV/O_2$ GPC with substrate temperatures higher than the glass transition temperature, the substantial increase in the PEG removal rate can be explained by surface-wave formation. The photo-dissociation of PEG film by UV exposure results in the formation of end aldehyde by dissociation of back-bone chain and direct decomposition of light molecules. The role of oxygen is forming peroxide radicals and/or terminating the dis-proportionation reaction by forming peroxide.