• 제목/요약/키워드: Gas Cleaning

검색결과 277건 처리시간 0.021초

레이저 충격파 클리닝 공정에서 음향 모니터링에 관한 연구 (Investigation of acoustic monitoring on laser shock cleaning process)

  • 김태훈;이종명;조성호;김도훈
    • 한국레이저가공학회지
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    • 제6권2호
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    • pp.27-33
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    • 2003
  • A laser shock cleaning technology is a new dry cleaning methodology for the effective removal of small particles from the surface. This technique uses a plasma shock wave produced by a breakdown of air due to an intense laser pulse. In order to optimize the laser shock cleaning process, it needs to evaluate the cleaning performance quantitatively by using a monitoring technique. In this paper, an acoustic monitoring technique was attempted to investigate the laser shock cleaning process with an aim to optimize the cleaning process. A wide-band microphone with high sensitivity was utilized to detect acoustic signals during the cleaning process. It was found that the intensity of the shock wave was strongly dependent on the power density of laser beam and the gas species at the laser beam focus. As a power density was larger, the shock wave became stronger. It was also seen that the shock wave became stronger in the case of Ar gas compared with air and N$_2$ gas.

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Effect of Process Parameters of UV Enhanced Gas Phase Cleaning on the Removal of PMMA (Polymethylmethacrylate) from a Si Substrate

  • Kwon, Sung Ku;Kim, Do Hyun
    • Transactions on Electrical and Electronic Materials
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    • 제17권4호
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    • pp.204-207
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    • 2016
  • Experimental study of UV-irradiated O2/H2 gas phase cleaning for PMMA (Polymethylmethacrylate) removal is carried out in a load-locked reactor equipped with a UV lamp and PBN heater. UV enhanced O2/H2 gas phase cleaning removes polymethylmethacrylate (PMMA) better at lower process pressure with higher content of H2. O2 gas compete for UV (184.9 nm) absorption with PMMA producing O3, O(1D) and lower dissociation of PMMA. In our experimental conditions, etching reaction of PMMA at the substrate temperature between 75℃ and 125℃ had activation energy of about 5.86 kcal/mol indicating etching was controlled by surface reaction. Above the 180℃, PMMA removal was governed by a supply of reaction gas rather than by substrate temperature.

저압 플라즈마 세정가스에 따른 세정특성 연구 (A Study on the Cleaning Characteristics according to the process gas of Low-Pressure Plasma)

  • 구희준;고광진;정찬교
    • 청정기술
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    • 제7권3호
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    • pp.203-214
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    • 2001
  • 플라즈마를 발생시키는 반응기체의 종류에 따라 실리콘 산화막 세정에 어떠한 영향을 미치는지에 대해 연구하였다. 압력 (100 mTorr), 전력 (300 W, 500 W), 전극간 거리 (5, 8, 11.5 cm), 세정시간 (90초, 180초), 가스유량 (50sccm) 등의 변수들을 고정시키고 $CHF_3$, $CF_4$, 아르곤, 산소 등의 세정가스를 변화시키며 세정성능을 비교하였다. 세정결과 아르곤 플라즈마는 단지 물리적인 스퍼터링 효과만으로 세정속도가 느렸다. 산소 플라즈마는 5cm 전극거리, 300W, 180초 세정시 좋은 세정효과를 내었으나, 표면거칠기가 증가하였다. $CF_4$ 플라즈마의 경우 가장 좋은 세정효과를 얻었다. $CHF_3$ 플라즈마는 CFx/F의 비율을 낮출 수 있는 첨가기체가 필요함을 알 수 있었다. $CHF_3$에 아르곤을 첨가하였을 경우에는 원활한 세정효과를 얻을 수 없었으나, 산소를 첨가하였을 경우 좋은 세정효과를 얻을 수 있었다.

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기-액 하이브리드 대기압 플라즈마 반응기 제작 및 특성 분석 (Fabrication and Characterization of Gas-liquid Hybrid Reactor Equipped with Atmospheric Pressure Plasma)

  • 권흥수;이원규
    • Korean Chemical Engineering Research
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    • 제60권3호
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    • pp.452-458
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    • 2022
  • 3가지 종류의 기-액 하이브리드 수평형, 수직형 그리고 needle-to-cylinder형 플라즈마 반응기가 제작되었다. 이들 반응기를 통하여 대기압 플라즈마 방전에서 발생하는 반응 활성종 생성과 전극 내의 전위차를 통한 세정성분의 기-액 활성화 반응을 일으키는 고효율 친환경 기반의 세정 개념을 제시하였다. 세정성능에 대한 효율성을 비교한 결과, needle-to-cylinder형 반응기가 가장 우수한 특성을 가졌다. 본 연구를 통해 기-액 하이브리드 대기압 플라즈마 반응기가 반도체 공정 등 초정밀 세정공정에 응용 가능성이 있음을 확인하였다.

PECVD Chamber Cleaning End Point Detection (EPD) Using Optical Emission Spectroscopy Data

  • Lee, Ho Jae;Seo, Dongsun;Hong, Sang Jeen;May, Gary S.
    • Transactions on Electrical and Electronic Materials
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    • 제14권5호
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    • pp.254-257
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    • 2013
  • In-situ optical emission spectroscopy (OES) is employed for PECVD chamber monitoring. OES is used as an addon sensor to monitoring and cleaning end point detection (EPD). On monitoring plasma chemistry using OES, the process gas and by-product gas are simultaneously monitored. Principal component analysis (PCA) enhances the capability of end point detection using OES data. Through chamber cleaning monitoring using OES, cleaning time is reduced by 53%, in general. Therefore, the gas usage of fluorine is also reduced, so satisfying Green Fab challenge in semiconductor manufacturing.

액체의 레이저 유기 절연파괴를 이용한 신개념 표면 세정 공정 (A novel surface cleaning process using laser-induced breakdown of liquid)

  • 장덕석;이종명;김동식
    • 한국레이저가공학회지
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    • 제12권4호
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    • pp.17-25
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    • 2009
  • The surface cleaning method based on the laser-induced breakdown (LIB) of gas and subsequent plasma and shock wave generation can remove small particles from solid surfaces. In the laser shock cleaning (LSC) process, a high-power laser pulse induces optical breakdown of the ambient gas above the solid surface covered with contaminant particles. The subsequently created shock wave followed by a high-speed flow stream detaches the particles. In this work, a novel surface cleaning process using laser-induced breakdown of liquid is introduced and demonstrated. LIB of a micro liquid jet increases the shock wave intensity and thus removes smaller particle than the conventional LSC method. Experiments demonstrate that the cleaning force and cleaning efficiency are also increased significantly by this method.

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반도체·디스플레이 탄소중립을 위한 PECVD 챔버세정용 NF3대체가스 개발연구 (Research Progress on NF3 Substitute Gas of PECVD Chamber Cleaning Process for Carbon Neutrality)

  • 조세윤;홍상진
    • 반도체디스플레이기술학회지
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    • 제22권4호
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    • pp.72-75
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    • 2023
  • Carbon neutrality has been emerged as important mission for all the manufacturing industry to reduce energy usage and carbon emission equivalent. Korean semiconductor and display manufacturing industries are also in huge interest by minimize the energy usage as well as to find a less global warming product gases in both etch and cleaning. In addition, Korean government is also investing long term research and development plan for the safe environment in various ways. In this paper, we revisit previous research activities on carbon emission equivalent and current research activities performed in semiconductor process diagnosis research center at Myongji University with respect to the reduction of NF3 usage for the PECVD chamber cleaning, and we present the analytical result of the exhaust gas with residual gas analysis in both 6 inches and 12 inches PECVD equipment. The presented result can be a reference study of the development of new substitution gas in near future to compare the cleaning rate of the silicon oxide deposition chamber.

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콜레이서를 이용한 배기가스 세정수 처리 성능에 관한 연구 (A Study on the Treatment Performance of Coalescer to Treat Exhaust Gas Cleaning Water)

  • 하신영;김인수
    • 한국항해항만학회지
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    • 제40권1호
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    • pp.1-6
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    • 2016
  • 본 연구에서는 선박에서 발생하는 대기오염물질을 처리하기 위해 사용되는 습식 스크러버를 이용한 배기가스 세정시스템(EGCS: Exhaust Gas Cleaning System)에서 발생되는 폐수를 재이용 할 수 있는 순환시스템을 개발하기 위해 진행되었다. 선박 배기가스 DePM, DeSOx 순환처리장치 (Recycle system)의 세정수의 입자성물질과 분산유를 효과적으로 제거할 수 있는 수 처리 시스템을 개발한 결과 원심분리형 Purifier만으로는 미세한 분산유의 처리가 어렵다는 결과가 도출되어 원심분리형 Purifier 후처리로 유수분리 경사 분리판을 이용한 유수분리기의 일종인 Coalescer를 본 시스템에 적용하였다. Coalescer는 2차 분산 상태의 에멀젼화 된 미세 기름입자를 합착시켜 분리하는 기술이다. 선박 배기가스 DePM, DeSOx 순환처리장치 (Recycle system)에서 배출되는 세정수를 Purifier와 Coalescer를 이용하여 처리한 결과 입자성물질은 55% 분산유는 유입수 대비 99%이상 처리되는 것을 확인하였다. 따라서 선박 대기오염 저감을 위한 습식세정탑 시스템에 본 세정수 처리시스템을 도입하면 세정수로서 재사용이 가능하다고 판단된다.

UV/O2 가스상 세정을 이용한 실리콘 웨이퍼상의 PEG 반응기구의 관찰 (Investigation of PEG(polyethyleneglycol) Removal Mechanism during UV/O2 Gas Phase Cleaning for Silicon Technology)

  • 권성구;김도현;김기동;이승헌
    • 한국전기전자재료학회논문지
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    • 제19권11호
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    • pp.985-993
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    • 2006
  • An experiment to find out the removal mechanism of PEG(polyethyleneglycol) by using UV-enhanced $O_2$ GPC (gas phase cleaning) at low substrate temperature below $200^{\circ}C$ was executed under various process conditions, such as substrate temperature, UV exposure, and $O_2$ gas. The possibility of using $UV/O_2$ GPC as a low-temperature in-situ cleaning tool for organic removal was confirmed by the removal of a PEG film with a thickness of about 200 nm within 150 sec at a substrate temperature of $200^{\circ}C$. Synergistic effects by combining photo-dissociation and photo oxidation can only remove the entire PEG film without residues within experimental splits. In $UV/O_2$ GPC with substrate temperatures higher than the glass transition temperature, the substantial increase in the PEG removal rate can be explained by surface-wave formation. The photo-dissociation of PEG film by UV exposure results in the formation of end aldehyde by dissociation of back-bone chain and direct decomposition of light molecules. The role of oxygen is forming peroxide radicals and/or terminating the dis-proportionation reaction by forming peroxide.