• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.99-100
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• 2007

ZnO films on $Al_2O_3$ substrates were grown using a pulsed laser deposition method. Through photoluminescence (PL) and X-ray diffraction (XRD) measurements, the optimum growth conditions for the ZnO growth were established. The results of the XRD measurements indicate that ZnO films were strongly oriented to the c-axis of the hexagonal structure and epitaxially crystallized under constraints created by the substrate. The full width half maximum for a theta curve of the (0002) peak was $0.201^{\circ}$. Also, from the PL measurements, the grown ZnO films were observed to give free exciton behaviour, which indicates a high quality of the epilayer. The Hall mobility and carrier density of the ZnO films at 293 K were estimated to be $299\;cm^2/V\;s$ and $8.27\;{\times}\;10^{16}\;cm^{-3}$, respectively. The absorption spectra revealed that the temperature dependance of the optical band gap on the ZnO films was $E_g(T)\;=\;3.439\;eV\;-\;(5.30\;{\times}\;10^{-4}\;ev/K)T^2(367\;+\;T)$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.121-122
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• 2007

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched sem-insulating GaAs(l00) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}l0^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155\;K)$.

• 해양환경안전학회지
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• 제10권1호
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• pp.51-54
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• 2004

최근 양어 양식장은 증가하고 있으며 이러한 곳에 사용할 가열장치는 경울 수온 조절을 위해 사용된다. 해수 가열장치는 부식성이 높고 압력이 높은 곳에 사용하기 위하여 고강도와 내식성이 요구된다. 만약 저강도와 저내식성을 갖게 되면 결국 누설 또는 파손되어 해수오염을 일으킬 수 있다. 대부분의 부식은 정체된 액과 틈이 형성된 부위에서 부식의 발생이 일어난다. 이 연구에서는 430 스테인레스재를 크기 $15{\times}20{\times}3mmt$에 대하여 1N H2SO4 + 0.05N NaCl용액을 사용하여 틈부식을 시험하였다. 틈의 크기는 $0.24{\times}3{\times}15mmL$로 하였으며 외부에 300mV전위를 인가하였다. 실험 결과 틈 부식 유기 시간은 750초로 나타나고, 틈 전위 강화는 -320에서 -399mV로 나타나 부식의 주 원인이 전위강화 기구에 의해 발생하였다.

• 전기전자학회논문지
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• 제15권4호
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• pp.305-312
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• 2011

A primary interest of this work is to develop an efficient and powerful repetitive pulser system for the application of ultra wide band generation. The important component of the pulser system is a small-sized coaxial type spark gap with planar electrodes filled with SF6 gas. A repetitive switching action by the coaxial spark gap generates two consecutive pulses in less than a microsecond with rise times of a few hundred picoseconds (ps). A set of several parameters for the repetitive switching of the spark gap is required to be optimized in charging and discharging systems of the pulser. The parameters in the charging system include a circuit scheme, circuit elements, the applied voltage and current ratings from power supplies. The parameters in the discharging system include the spark gap geometry, electrode gap distance, gas type, gas pressure and the load. The characteristics of the spark gap discharge, such as breakdown voltage, output current pulse and recovery rate are too dynamic to control by switching continuously at a high pulse repetition rate (PRR). This leads to a low charging efficiency of the spark gap system. The breakthrough of the low charging efficiency is achieved by a parallel operation of two spark gaps system. The operational behavior of the two spark gaps system is presented in this paper. The work has focused on improvement of the charging efficiency by scaling the PRR of each spark gap in the two spark gaps system.

• Journal of Preventive Medicine and Public Health
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• 제22권1호
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• pp.116-124
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• 1989

일부 중금속에 의한 배양임파구에서 세포유전학적 독성을 알아보고자 $NiCl_2,\;K_2Cr_2O_7CdCl_2$ 및 $HgCl_2$에 의한 SCE빈도 및 염색체이상을 조사한 결과는 다음과 같다. SCE빈도는 공시한 중금속 모두에서 농도증가에 따라 대조군의 $7.20{\pm}2.5$에 비해 유의하게 증가되었으며(p<0.05), 각 중금속의 최고 SCE빈도는 $NiCl_2$의 경우 $1{\times}10^{-4}M$에서 $11.6{\pm}4.0,\;K_2Cr_2O_7$의 경우 $1{\times}10^{-5}M$에서 $16.3{\pm}4.1,\;CdCl_2$의 경우 $1{\times}10^{-6}M$에서 $11.4{\pm}5.5$ 및 $HgCl_2$의 경우 $1{\times}10^{-5}M$에서 $12.6{\pm}5.5$로 나타났다. 또한 공시한 농도에서 가장 높은 SCE유발 중금속은 6가 크롬이었으며 니켈, 카드뮴, 수은은 비교적 낮은 SCE빈도를 보였다. 염색체이상은 gap, break, 기타의 순으로 그 빈도가 감소하였으며 염색체이상을 갖는 세포의 전체빈도는 니켈과 크롬화합물에서는 농도증가에 따라 증가되었고 크롬의 경우 대조군의 2.0%에 비해 $1{\times}10^{-4}M$에서는 15.7%로 가장 높은 염색체이상 빈도를 보였다. 염색체이상 유형별로는 니켈의 경우 염색체 gap은 농도증가에 따라 용량대 반응으로 증가한 반면 break는 유의한 변화가 없었으며 크롬의 경우는 gap과 break가 비슷한 양상으로 증가되었다. 그러나 수은과 카드뮴의 경우에서는 염색체이상이 거의 유발되지 않았다.

• 대한산업공학회지
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• 제14권2호
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• pp.41-51
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• 1988

In this paper an efficient heuristic for the generalized assignment problem(GAP) is presented. A new lower bound that is slightly improved by adding the feasibility constraint is used to measure the quality of solutions obtained by the heuristic. The heuristic was tested on a number of large-scale random problems and a large sample of small problems. The heuristic appears to be better than the best previously existing heuristic for GAP. Its effectiveness in comparison of running times and closenesses to lower bound is discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.541-544
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• 1988

EDAS_P system for electronic circuits design, which is developed at ETRI. There are 3 kinds of graphics tools. In this paper, we presents the improved graphics functions of EDAS_P system using the GSS${\times}$CGI.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.193-195
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• 1988

The native oxide films were thermally and anodically formed on the n-GaP substrates grown by SSD method and measured this oxide thickness and the chemical composition and the electrical properties with formation condition. The chemical composition of themally oxidized GaP film was composed of mostly $GaPO_4$ at temperature below $800^{\circ}C$ and mostly $\beta-Ga_{2}O_{3}$ above $800^{\circ}C$. But The chemical composition of anodically oxidized GaPfilm was composed of the mixture of $Ga_{2}O_{3}$ and $P_{2}O_{5}$. The barrier height of Al/oxide/n-Gap which was formed at $700^{\circ}C$ by thermal oxidation method were 1.10eV, 1.03eV in Current-Voltage measurement. Interface charge density were $4{\times}10^{12}q(C/cm^2)$ and $3{\times}10^{12}q(C/cm^2)$ in Capacitance-Voltage measurement respectively.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2002년도 학술대회지
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• pp.541-544
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• 2002

The turbine performance test of an axial-type turbine is carried out with various axial gap distances between the stator and rotor. The turbine is operated at the low pressure and speed, and the degree of reaction is 0.373 at the mean radius. The axial-type turbine consists of ons-stage and 3-dimensional blades. The chord length of rotor is 28.2mm and mean diameter of turbine is 257.56mm. The power of turbo-blower for input power is 30kW and mass flow rate is $340m^3/min\;at\;290mmAq$ static-pressure. The RPM and output power are controlled by a dynamometer connected directly to the turbine shaft. The axial gap distances are changed from a quarter to two times of stator axial chord length, and performance curves are obtained with 7 different axial gaps. The efficiency is dropped about $5{\%}$ of its highest value due to the variation of axial gap on the same non-dimensional mass flow rate and RPM, and experimental results show that the optimum axial gap is 1.0-1.5Cx.

• 전기학회논문지
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• 제61권9호
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• pp.1314-1318
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• 2012

Recently, applications of plasma display to the large public display and transparent display gain much attention. With this background, we report characteristics of opposite electrodes discharge cell with long electrode gap in comparison with conventional co-planar surface discharge. The cell size of test panel is $2950{\mu}m{\times}840{\mu}m$, which corresponds to that of the display having diagonal size of 130" with XGA resolution. Electrode gap of co-planar and opposite electrode structure are $240{\mu}m$ and $500{\mu}m$ respectively. These gap dimensions provide similar driving voltage windows. Experimental results show that opposite discharge provides approximately four fold higher luminous efficacy compared with that of the surface discharge. Resulting efficacy is found to be higher than 19 lm/W in green phosphor with 10 KHz continuous pulse operation.