• 제목/요약/키워드: Gap junction

검색결과 171건 처리시간 0.024초

Stability Assessment of Lead Sulfide Colloidal Quantum Dot Based Schottky Solar Cell

  • Song, Jung-Hoon;Kim, Jun-Kwan;An, Hye-Jin;Choi, Hye-Kyoung;Jeong, So-Hee
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.413-413
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    • 2012
  • Lead sulfide (PbS) Colloidal quantum dots (CQDs) are promising material for the photovoltaic device due to its various outstanding properties such as tunable band-gap, solution processability, and infrared absorption. More importantly, PbS CQDs have large exciton Bohr radius of 20 nm due to the uniquely large dielectric constants that result in the strong quantum confinement. To exploit desirable properties in photovoltaic device, it is essential to fabricate a device exhibiting stable performance. Unfortunately, the performance of PbS NQDs based Schottky solar cell is considerably degraded according to the exposure in the air. The air-exposed degradation originates on the oxidation of interface between PbS NQDS layer and metal electrode. Therefore, it is necessary to enhance the stability of Schottky junction device by inserting a passivation layer. We investigate the effect of insertion of passivation layer on the performance of Schottky junction solar cells using PbS NQDs with band-gap of 1.3 eV. Schottky solar cell is the simple photovoltaic device with junction between semiconducting layer and metal electrode which a significant built-in-potential is established due to the workfunction difference between two materials. Although the device without passivation layer significantly degraded in several hours, considerable enhancement of stability can be obtained by inserting the very thin LiF layer (<1 nm) as a passivation layer. In this study, LiF layer is inserted between PbS NQDs layer and metal as an interface passivation layer. From the results, we can conclude that employment of very thin LiF layer is effective to enhance the stability of Schottky junction solar cells. We believe that this passivation layer is applicable not only to the PbS NQDs based solar cell, but also the various NQDs materials in order to enhance the stability of the device.

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피난계단 합류 시 유동률에 대한 피난실험 및 모델링 비교 (Comparison of Egress Modeling and Experiments for Joint Flow Rate in the Staircase)

  • 황은경;우수진;김종훈;김운형
    • 한국화재소방학회논문지
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    • 제28권6호
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    • pp.41-46
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    • 2014
  • 계단에서의 합류는 건물 피난해석에서 매우 중요한 요소이다. 건물에서의 대규모 피난인이 이동하는 경우 정체가 발생하게 되는 지점은 병목현상이 발생하는 문이나 공간이 좁아지는 지점이 있다. 또한 계단에서의 정체이다. 계단에서의 정체는 상부층에서 내려오는 인원과 연결층에서 진입하려는 인원이 합류하면서 발생된다. 이러한 현상은 초고층 건물일 경우 더욱 심하게 될 것이다. 이러한 현상에 대해 현재 시뮬레이션의 결과에 의존하고 있다. 하지만, 이러한 모사가 정확하게 실제와 같이 구현되는지는 실험과의 비교를 통해 검토해볼 필요가 있다. 본 연구에서는 계단에서의 합류에 대한 실험과 시뮬레이션 적용분석을 수행하고 그 결과를 비교해보았다. 실제 실험과 시뮬레이션의 적용 결과는 차이를 보여주고 있으며, 모델링의 결과가 실제보다 낮은 것으로 나타나고 있다.

Analysis of Lattice Temperature in Super Junction Trench Gate Power MOSFET as Changing Degree of Trench Etching

  • Lee, Byeong-Il;Geum, Jong Min;Jung, Eun Sik;Kang, Ey Goo;Kim, Yong-Tae;Sung, Man Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권3호
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    • pp.263-267
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    • 2014
  • Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.

10-V 조셉슨접합 어레이의 제작 및 특성 (Fabrication and Characteristics of 10-V Josephson Junction Array)

  • 홍현권;박세일;김규태
    • Progress in Superconductivity
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    • 제4권1호
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    • pp.59-63
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    • 2002
  • 10-V Josephson junction array arranged in 8 parallel stripline paths was fabricated using self-aligning and reactive ion etching techniques. These techniques were introduced in detail with aim of obtaining high-quality junctions. The array has 18,184 Josephson junctions with the area of $12\mu\textrm{m}$$\times$$38\mu\textrm{m}$. The gap voltage and minimum critical current density were about 2.7 ㎷ and /$23 A\textrm{cm}^2$, respectively. And the critical current density and leakage current at 5 volt were about 27 $A/\textrm{cm}^2$ and $5\mu\textrm{A}$, respectively When operated in the frequency range of 76-88 ㎓, the away generated constant voltage steps up to 14-19 V. The step size near 10-V was more than 7 $\mu\textrm{A}$.

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Clinical Significance of CLDN18.2 Expression in Metastatic Diffuse-Type Gastric Cancer

  • Kim, Seo Ree;Shin, Kabsoo;Park, Jae Myung;Lee, Han Hong;Song, Kyo Yong;Lee, Sung Hak;Kim, Bohyun;Kim, Sang-Yeob;Seo, Junyoung;Kim, Jeong-Oh;Roh, Sang-Young;Kim, In-Ho
    • Journal of Gastric Cancer
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    • 제20권4호
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    • pp.408-420
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    • 2020
  • Purpose: Isoform 2 of tight junction protein claudin-18 (CLDN18.2) is a potential target for gastric cancer treatment. A treatment targeting CLDN18.2 has shown promising results in gastric cancer. We investigated the clinical significance of CLDN18.2 and other cell-adherens junction molecules (Rho GTPase-activating protein [RhoGAP] and E-cadherin) in metastatic diffuse-type gastric cancer (mDGC). Materials and Methods: We evaluated CLDN18.2, RhoGAP, and E-cadherin expression using two-plex immunofluorescence and quantitative data analysis of H-scores of 77 consecutive mDGC patients who received first-line platinum-based chemotherapy between March 2015 and February 2017. Results: CLDN18.2 and E-cadherin expression was significantly lower in patients with peritoneal metastasis (PM) than those without PM at the time of diagnosis (P=0.010 and 0.013, respectively), whereas it was significantly higher in patients who never developed PM from diagnosis to death than in those who did (P=0.001 and 0.003, respectively). Meanwhile, CLDN18.2 and E-cadherin expression levels were significantly higher in patients with bone metastasis than in those without bone metastasis (P=0.010 and 0.001, respectively). Moreover, we identified a positive correlation between the expression of CLDN18.2 and E-cadherin (P<0.001), RhoGAP and CLDN18.2 (P=0.004), and RhoGAP and E-cadherin (P=0.001). Conversely, CLDN18.2, RhoGAP, and E-cadherin expression was not associated with chemotherapy response and survival. Conclusions: CLDN18.2 expression was reduced in patients with PM but significantly intact in those with bone metastasis. Furthermore, CLDN18.2 expression was positively correlated with other adherens junction molecules, which is clinically associated with mDGC and PM pathogenesis.

Implementation and Evaluation of Interleaved Boundary Conduction Mode Boost PFC Converter with Wide Band-Gap Switching Devices

  • Jang, Jinhaeng;Pidaparthy, Syam Kumar;Choi, Byungcho
    • Journal of Power Electronics
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    • 제18권4호
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    • pp.985-996
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    • 2018
  • The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.

Self-Aligning 기술과 반응성 이온 식각 기술로 제작된 Nb 조셉슨 접합 어레이의 특성 (Fabrication of All-Nb Josephson Junction Array Using the Self-Aligning and Reactive ion Etching Technique)

  • Hong, Hyun-Kwon;Kim, Kyu-Tea;Park, Se-Il;Lee, Kie-Young
    • Progress in Superconductivity
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    • 제3권1호
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    • pp.49-55
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    • 2001
  • Josephson junction arrays were fabricated by DC magnetron sputtering, self-aligning and reactive ion etching technique. The Al native oxide, formed by thermal oxidation, was used as the tunneling barrier of Nb/$Al-A1_2$$O_3$Nb trilayer. The arrays have 2,000 Josephson junctions with the area of $14\mu\textrm{m}$ $\times$ $46\mu\textrm{m}$. The gap voltages were in the range of 2.5 ~2.6 mV and the spread of critical current was $\pm$11~14%. When operated at 70~94 ㎓, the arrays generated zero-crossing steps up to 2.1~2.4 V. To improve transmission of microwave power and prevent diffusion of oxygen into Nb ground-plane while depositing $SiO_2$dielectric, we applied a plasma nitridation process to the Nb ground-plane. The microwave power was well propagated in Josephson junction arrays with nitridation. The difference in microwave transmission 7an be interpreted by the surface impedance change depending on nitridation.

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개와 사람의 선천성 심장 전도장애에 대한 분자 유전학적 이해 (Molecular Genetics of Inherited Cardiac Conduction Defects in Humans and Dogs)

  • Hyun, Changbaig
    • 한국임상수의학회지
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    • 제21권2호
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    • pp.219-228
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    • 2004
  • 심장 전도계에 관련된 심장 질환은 심장 전도계의 원발성 결함이나 형태학적 심장 질환 및 약물 중독 같은 속발성 원인에 의해 발생한다. 특히 선천성 심장 전도 장애의 경우, 이온 채널, 이온 채널에 관련한 세포질성 단백질, gap-junction 단백질, transcription factors (심장 발생에 관련된 유전자들) 및 kinase subunit을 전사하는 유전자의 돌연변이가 원발성 선천성 심장 전도장애의 원인으로 밝혀지고 있다. 사람의 부정맥 발생에 관련된 발병기전에 커다란 진보가 이루어지고 있음에도 불구하고, 개의 경우, 저먼 세퍼드의 급사 증후군 (sudden death syndrome)을 제외한 다른 전도 장애에 대한 연구는 극히 미비한 상태이다. 본 종설에서는 지금까지 밝혀진 심장 부정맥 발생의 분자 유전학적 고찰과 이와 관련된 사람의 유전학적 질환들과 이와 유사한 개의 선천성 심장 전도 장애에 대해 연구 고찰하였다.

Lack of connexin 32 does not enhance the benzene-induced hematotoxicity and hemopoietic tumor incidence in mice

  • Yoon, Byung-IL
    • 대한수의학회지
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    • 제45권4호
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    • pp.517-525
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    • 2005
  • This study was performed to evaluate using wild-type (WT) and $C{\times}32$ knockout (KO) mice if lack of cell to cell communication by connexin 32 gap junction enhances the benzene-induced hematotoxicity and hemopoietic tumor development. The WT and $C{\times}32$ KO mice were exposed to 300 ppm of benzene for 6 hours/day, 5 days/week for a total of 26 weeks by inhalation, and then sacrificed to evaluate the toxicities of hemopoietic organs or allowed to live out their life span to evaluate the hemopoietic tumor incidence. The significant increase and decrease of organ weight were respectively noted in spleen and thymus of both WT and $C{\times}32$ KO mice without significant difference between the genotypes. Histopathologically, benzene exposure for 26 weeks induced the morphological changes in hemopoietic organs, characterized by fat cell accumulation in the bone marrow and extramedullary hemopoiesis in the spleen. The fat cell accumulation was, compared with that of WT mice, considerably exacerbated in the $C{\times}32$ KO mice. However, no significant difference was observed in the changes of hematological values and bone marrow cellularity as well as in the onset and incidence of hemopoietic tumors between WT and $C{\times}32$ KO mice. In conclusion, this study indicated little significant role of the cellular communication by $C{\times}32$ gap junction in the action mechanism of benzene hematotoxicity and leukemogenicity.

흰쥐 절치치수의 Odontoblast에 관한 Freeze-Fracture 연구 (A Freeze-fracture Study on the Odontoblast of Dental Pulp in the Rat Incisor)

  • 김명국
    • Applied Microscopy
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    • 제16권2호
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    • pp.1-13
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    • 1986
  • The purpose of this study was to investigate the morphology and intercellular junctions of the odontoblast of dental pulp in the rat incisor by means of the freeze fracture electron microscopy. Twenty male Sprague-Dawley rats weighing $150{\sim}200g$ were used. After being anesthetized by an intraperitoneal injection of 0.5 ml sodium pentobarbital per kg in body weight(60 mg/ml) the animals were perfused with 2.5% glutaraldehyde-2% paraformaldehyde fixative in 0.1 M cacodylate buffer, pH 7.2 through the ascending aorta for one hour. The incisors were carefully extracted from the jaws and demineralized by suspending them in 0.1 M EDTA in 3% glutaraldehyde (pH 7.2) for two weeks. After demineralization, the specimens were obtained from the portion divided into five equal parts. For freeze-fracture replication, demineralized tissues were infiltrated for several hours with 10%, 25% glycerol in 0.1M cacodylate buffer as a cryoprotectant and then frozen in liquid Freon 22 and stored in liquid nitrogen. Fracturing and replication were done in Balzers BAF 400D high-vacuum freeze-fracture apparatus at $-120^{\circ}C$ under routine $5X10^{-7}$ Torr vacuum. The tissue was immediately replicated with platinum unidirectionally at $45^{\circ}$ angle and reinforced with carbon at $90^{\circ}$ angle unidirectionally or by using a rotary stage. The replication process was monitored by a quartz-crystal device. The replicas were immersed in 100% methanol overnight. The tissue was then digested from the replica by clorox (laundry bleach), placed into 5% EDTA, and washed repeatedly with distilled water. The replicas were picked up on 0.3% formvar-coated 75 mesh grids and examined in the JEOL 100B electron microscope. The results were as follows; 1. Both in thin sections and freeze-fracture replicas, three types of intercellular junctions were recognizable in the plasma membrane of odontoblast: gap junction, tight junction and desmosome-like junction. 2. The nuclear pores were evenly distributed over the nuclear envelope. The pore complex formed a ring about 70 nm in diameter. 3. Gap junctions were found between odontoblasts as well as odontoblasts and neighbouring pulp cells (fibroblast, subodontoblastic cell process, nerve-like fibre). Gap junctions, which were round, ellipsoid and pear-shaped and 600 nm in diameter, were observed in the odontoblast. 4. Numerous round and ellipsoid gap junctions could be frequently seen on the plasma membranes in cell body and apical part of the odontoblasts. On the P face, the junctions were recognized as a cluster of closely packed particles, measuring about 9 nm in diameter, and on the E face, the junctions were recognized as a shallow grooves.

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