• 제목/요약/키워드: Gap Voltage

검색결과 921건 처리시간 0.025초

풀 브릿지 인버터의 비선형성을 고려한 단상 영구자석 동기 전동기의 구형파 전압 주입 기동 기법 (Square Wave Voltage Injection Starting Method of SP-PMSM Considering Nonlinearity of Full-bridge Inverter)

  • 유상민;황선환;이기창
    • 항공우주시스템공학회지
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    • 제16권3호
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    • pp.93-98
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    • 2022
  • 본 논문에서는 풀 브릿지 인버터의 비선형성을 고려한 단상 영구자석 동기 전동기의 오픈 루프 기동성을 개선하기 위한 구형파 전압 주입 기법을 제안한다. 일반적으로 단상 영구자석 동기 전동기는 3상 교류기와 달리 풀 브릿지 인버터를 채택하고 있으며 대칭 공극으로 자기 회로를 설계할 경우, 영토크 지점의 특정 위치에서 기동이 불가능할 수 있기에 비대칭 공극 설계가 요구된다. 이러한 단상 영구자석 동기 전동기의 구동 특성상 센서리스 운전 모드의 오픈 루프 제어시 기동 실패의 가능성이 상당히 높다. 본 논문에서는 이러한 문제를 해결하기 위해 인버터의 비선형성을 고려한 구형파 전압을 인가하여 기동 성능을 개선하는 기법을 제안하고자 한다. 제안한 알고리즘은 다수의 실험을 통해 타당성을 검증하였다.

Cell Gap Dependent Transmission Characteristic of the Fringe-Field Switching Mode in a LC with Negative Dielectric Anisotropy

  • Kim, H.Y.;Kim, J.M.;Song, S.H.;Lee, S.K.;Lim, Y.J.;Jung, S.H.;Lee, S.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.539-542
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    • 2003
  • We have studied cell gap-dependent electrode-optic characteristics of the FFS mode using the LC with negative dielectric anisotropy. In case of a small cell gap of 2 ${\mu}m$, the transmittance at the center of pixel and common electrodes is low due to stronger influence of surface anchoring that holds the LC to the initial state than twisting force induced by neighboring LCs. In case of a large cell gap of 4 ${\mu}m$, the influence of surface anchoring force becomes weak so that the LCs at the center of pixel and common electrode can be twisted enough by applied voltage, giving rise to high transmittance. Therefore, we conclude that the light efficiency in the device is dependent on the cell gap.

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Photonic band gap fomation by mircostrip ring

  • Jang, Mi-Young;Kee, Chul-Sik;Park, Ikmo;H. Lim
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2001년도 종합학술발표회 논문집 Vol.11 No.1
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    • pp.337-340
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    • 2001
  • We show that the microstrip ring with a narrow gap exhibits a photonic band gap (PBG) that is generally believed to be created by a periodic array. The discontinuity of impedance at the narrow gap induces the multiple reflections with fixed phase correlation necessary to make the PBG. We have also discussed the tuning of the PBG frequency by applying an external voltage on a varactor mounted on the gap and the applications of this PBG ring as a tunable bandstop filter and a microwave switch.

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고온 동작 MESFET 의 온도특성 해석 (High Temperature Characteristics of submicron GaAs MESFETs)

  • 원창섭;유영한;신훈범;한득영;안형근
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.379-382
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    • 2002
  • GaAs has wide band gap, Therefore that malarial can used high Temperature application. in this paper explain to current-voltage characteristics of thermal effect. we experiment on thermal test of current-voltage characteristics and gate leakage current with real device. As a result, we propose a current-volatage characteristics model. that model base on gate leakage current, and gate leakage current influence gate source voltage.

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우중 Corona에 의한 전선의 진동 (The Vibration of Power Lines due to Corona in the Rainy Environments)

  • 김준현
    • 전기의세계
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    • 제21권4호
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    • pp.22-26
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    • 1972
  • The vibration of power lines in rainy environments was researched using the concentric cylindrical gap to which D.C. voltage was applied. Consequently, it has been solidly conformed that the vibration of power lines begins at threshold voltage of corona, and that the amplitude of the vibration increases as the numbers of falling water drop per unit time increase. The vibration phenomen take place in straight line, elliptic or circular motion as voltage is applied the numbers of vibration nearay accord with the elastic vibrarion theory.

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유전율 이방성의 음인 액정을 이용한 Fringe-Field Switching mode의 cell gap 변화에 따른 전기광학 특성 (Cell Gap Dependent Electrode-Optic Characteristics of Fringe-Field Switching Mode using a Liquid Crystal with Negative Dielectric Anisotropy)

  • 정송희;김향율;이종문;이승희
    • 한국전기전자재료학회논문지
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    • 제16권10호
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    • pp.914-922
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    • 2003
  • The FFS (fringe-field switching) mode was known to exhibit both a wide viewing angle and high transmittance, especially when using a liquid crystal with negative dielectric anisotropy. We have studied cell gap-dependent electrode-optic characteristics of the FFS mode using the LC with negative dielectric anisotropy. In case of a small cell gap of 2 ${\mu}$m, the transmittance at the center of pixel and common electrodes is relatively low because effect of surface anchoring that holds the LC to the initial state is larger than that in a large cell gap of 4 .urn such that the LCs in those regions cannot rotate enough. However, in case of a large cell gap of 4 .urn, the effect of surface anchoring becomes relatively small so that the LCs at the center of pixel and common electrode can be twisted enough by applied voltage, giving rise to high transmittance. Therefore, we can conclude that the light efficiency is dependent on the cell gap.

대형연소기에 적용되는 저주파 전자식 점화 트랜스 개발에 관한 연구 (A Study on the Development of Low Frequency Electronic Ignition Trans for Large Combustors)

  • 이호균;박정철
    • 한국정보전자통신기술학회논문지
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    • 제15권4호
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    • pp.223-229
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    • 2022
  • 본 논문은 보일러에 사용되는 점화트랜스에 대해 연구를 하였다. 점화봉 길이와 점화봉 간격 변화에 관계없이 출력주파수는 59.5~61.3Hz 사이에서 측정되었고 저주파 회로는 정상적으로 동작된 것을 알 수 있었다. 점화봉 간격이 2~10mm 변화를 주었을 때, 점화봉 길이가 30cm에서는 2.8A에서 3.45A까지 측정되었다. 점화봉 길이가 500cm에서는 9.37A에서 14.5A까지 측정되었고 1000cm에서는13.2A에서 32.6A까지 측정되었다. 점화봉 길이와 점화봉 간격이 증가 될수록 전류는 증가되었다. 2차코일 출력전압을 측정한 결과. 점화봉 길이가 30cm에서는 AC 0.84kV~AC 1.75kV로 측정되었고 500cm 인 경우는 AC 1.17kV~AC 1.944로 측정되었고 1000cm에서는 AC 1.4kV~AC 7.18kV까지 측정되었다. 점화봉 길이와 점화봉 간격이 증가되면 2차코일 출력전압도 증가되었다. 점화트랜스의 출력전압 측정한 결과, 점화봉 길이가 30cm에서는 DC 1.11kV~DC 1.57kV 까지 측정되었고 500cm 인 경우는 DC 2.49kV~DC 3.72kV, 1000cm에서는 DC 3.78kV~DC 9.42kV까지 측정되어서 점화봉 길이와 점화봉 간격이 증가되면 출력전압이 증가된 것을 알 수 가 있었다.

3.3 kV 이상의 전력반도체 소자 구현 및 신뢰성 향상을 위한 필드링 최적 설계에 관한 연구 (The Optimal Design of Field Ring for Reliability and Realization of 3.3 kV Power Devices)

  • 강이구
    • 한국전기전자재료학회논문지
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    • 제30권3호
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    • pp.148-151
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    • 2017
  • This research concerns field rings for 3.3kV planar gate power insulated-gate bipolar transistors (IGBTs). We design an optimal field ring for a 3.3kV power IGBT and analyze its electrical characteristics according to field ring parameters. Based on this background, we obtained 3.3kV high breakdown voltage and a 2.9V on state voltage drop. To obtain high breakdown voltage, we confirmed that the field ring count was 23, and we obtained optimal parameters. The gap distance between field rings $13{\mu}m$ and the field ring width was $5{\mu}m$. This design technology will be adapted to field stop IGBTs and super junction IGBTs. The thyristor device for a power conversion switch will be replaced with a super high voltage power IGBT.

공극이 도입된 철심에 코일의 자기결합을 이용한 초전도한류기의 고장전류 제한 및 히스테리시스 특성 (Fault Current Limiting and Hysteresys Characteristics of a SFCL using Magnetic Coupling of Two Coils on the Iron Core with an Air-Gap)

  • 임성훈;김재철
    • 조명전기설비학회논문지
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    • 제25권2호
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    • pp.137-142
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    • 2011
  • In this paper, the fault current limiting and the hysteresys characteristics of a superconducting fault current limiter (SFCL) using magnetic coupling of two coils on the iron core with an air-gap were analyzed. The introduction of the air-gap in the SFCL with magnetically coupled two coils can suppress the saturation of the iron-core and, on the other hand, make the limiting impedance of the SFCL decreased, which results from the increase of the exciting current. To analyze the effect of the aig-gap on the fault current limiting characteristics of the SFCL, the hysteresys curves of the iron core comprising the SFCL were derived from the short-circuit experiment and the variation in the voltage-current trace of the SFCL during the fault period was analyzed. Through the comparison with the current limiting characteristics of the SFCL without air-gap, the air-gap could be confirmed to contribute to the suppression of the iron core's saturation through the increase of the SFCL's burden from the short-circuit current.

VA Mode의 LCOS에서 Cell Gap의 변화에 따른 전기광학적 특성 (Electro-optical Characteristics of VA mode LCOS depending on Cell Gap)

  • 강정원;손홍배
    • 반도체디스플레이기술학회지
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    • 제7권3호
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    • pp.41-43
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    • 2008
  • The electro-optical characteristics of the Liquid Crystal on Silicon (hereinafter "LCOS") micro-display on vertically alignment (VA) mode were studied depending on various cell gaps. 5 different cell gaps, such as $1.4{\mu}m,\;1.8{\mu}m,\;2.1{\mu}m,\;2.4{\mu}m$ and $2.8{\mu}m$, were selected. The reflectance-voltage (R-V) characteristics, distributions of reflected light and reflectance were calculated with 3-dimmensional LC code. At the center of cell, the smallest $1.4{\mu}m$ cell gap showed the lowest reflectance and the largest $2.8{\mu}m$ cell gap showed the highest reflectance due to the surface anchoring effect. In case of $2.1{\mu}m$ cell gap, the sum of reflectance overall cell was the highest value. Considering the reflectance and RV curve characteristic, the optimized cell gap was $2.1{\mu}m$.

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