• Clean Technology
• /
• v.22 no.2
• /
• pp.122-131
• /
• 2016

Caesium radioisotopes, ¹³⁴Cs and ¹³⁷Cs which come from the atmospheric nuclear tests and discharges from nuclear power plants, are very important to study artificial radioactivity. In this work, in order to lower the minimum detection activity (MDA) we investigated environmental radioactivity according to the Environment Measurement Laboratory procedure by ¹³⁷Cs and ¹³⁴Cs which is similar to chemical and environmental behaviors of ¹³⁷Cs. The environmental soils in high mountain areas near nuclear power plant were collected, and an Ammonium Molybdophosphate (AMP) precipitation method, which showed high selectivity toward Cs⁺ ions, was applied to chemically extract and concentrate Caesium radioisotopes. Radioactivity was estimated by a gamma-ray spectrometry. In gamma energy spectrum, with an increasing of ⁴⁰K radioactivity, it increased the MDA of ¹³⁴Cs and ¹³⁷Cs. Therefore, if the natural radionuclides were removed from the soil samples, the MDA of Caesium may be reduced, and the contents of ¹³⁷Cs of in the environmental soils can effectively be estimated. In the standard soil sample of Korea Institute of Nuclear Safety, radioactivity of ⁴⁰K was removed more than 84% on average, and the MDA of ¹³⁴Cs was reduced 2 times. The content of ¹³⁷Cs was recovered over 84%. On the other hand, in environmental soils, AMP precipitation method showed removal ratio of ⁴⁰K up to 180 times, which reduced the MDA about 5 times smaller than those of Direct method. ¹³⁷Cs recovery ratio showed from 54.54% to 70.06%. When considering the MDA and recovery ratio, AMP precipitation method is effective for detection of Caesium radioisotopes in low concentration.

• Korean Journal of Materials Research
• /
• v.23 no.12
• /
• pp.714-721
• /
• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.14 no.6
• /
• pp.244-252
• /
• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Journal of Korean Traditional Oncology
• /
• v.16 no.1
• /
• pp.41-53
• /
• 2011

Background and Objectives: Iodine is an essential constituent of the thyroid hormones associated with the growth and development of humans and animals as an inorganic nutrition. This element may be accumulated in human blood, tissues and body through the intake of foodstuffs, a beverage, a nutritional supplement and a medicine, among others. The aim of the research is to find out a better medicinal stuff for the thyroid cancer patient who required a low level of iodine diet. Methods: Neutron activation analysis (NAA) used for the iodine analysis is one of nuclear analytical techniques using radiation and radioisotopes and very useful as sensitive analytical technique for performing both qualitative and quantitative multi-elemental non-destructive analysis of major, minor and trace components in variety of environmental and biological materials. In this study, iodine contents in ten kinds of oriental herb medicinal products, which is frequently used to cancer patients are determined by using instrumental neutron activation analysis (INAA) at the HANARO research reactor. The samples prescribed are manufactured as powdered form for taking medicine easily. The analytical quality control is performed to assure an uncertainty of the measurement and to compensate the measured data using a biological certified reference material, NIST SRM 1572, Citrus Leaves. The measured value is $1.89{\pm}0.35mg/kg$, and the relative error is 2.88%, and relative standard deviation is 19 % due to high counting error by small counts of gamma ray spectrum. The standard deviations for other elements such as Cl, K, Mn and Na were in the range of 2 to 8%. Result: The level of iodine contents of Biki-huan, Chungryong-huan and Chungcho-huan, samples detected is less than 6 mg/kg except Hangam Plus sample (more than 210 mg/kg) and six samples were not detected. Iodine in the samples of Shoxiho-tang, Shopunghualhyl-tang, Shocungryong-tang, Banhasaxim-tang, Insampaedox-san and Myunyuk Plus were not measured, but possible level of content can be estimated from the detection limits. In addition, the concentrations of some major elements like Cl, K, Mn, Na, in the samples were determined with the detection limits. Conclusions: Most of samples showed low iodine contents of less than 6 mg/kg but it turned out that most of testing samples can be used to classify the level of iodine diet samples considering the recommended low level of iodine diet 50 ${\mu}g$/day, and a better medicinal stuff for the thyroid cancer patient can be found.

• Journal of Sensor Science and Technology
• /
• v.13 no.2
• /
• pp.157-167
• /
• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• Journal of Sensor Science and Technology
• /
• v.23 no.2
• /
• pp.134-141
• /
• 2014

A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.

• Progress in Medical Physics
• /
• v.20 no.2
• /
• pp.72-79
• /
• 2009

Scatter correction for I-131 plays a very important role to improve image quality and quantitation. I-131 has multiple and higher energy gamma-ray emissions. Image quality and quantitative accuracy in I-131 imaging are degraded by object scatter as well as scatter and septal penetration in the collimator. The purpose of this study was to estimate scatter and septal penetration and investigate two scatter correction methods using Monte Carlo simulation. The gamma camera system simulated in this study was a FORTE system (Phillips, Nederland) with high energy, general-purpose, parallel hole collimator. We simulated for two types of high energy collimators. One is composed of lead, and the other is composed of artificially high Z number and high density. We simulated energy spectrum using a point source in air. We estimated both full width at half maximum (FWHM) and full width at tenth maximum (FWTM) using line spread function (LSF) in cylindrical water phantom. We applied two scatter correction methods, triple energy window scatter correction (TEW) and extended triple energy window scatter correction (ETEW). The TEW method is a pixel-by pixel based correction which is easy to implement clinically. The ETEW is a modification of the TEW which corrects for scatter by using abutted scatter rejection window, which can overestimate or the underestimate scatter. The both FWHM and FWTM were estimated as 41.2 mm and 206.5 mm for lead collimator, respectively. The FWHM and FWTM were estimated as 27.3 mm and 45.6 mm for artificially high Z and high density collimator, respectively. ETEW showed that the estimation of scatter components was close to the true scatter components. In conclusion, correction for septal penetration and scatter is important to improve image quality and quantitative accuracy in I-131 imaging. The ETEW method in scatter correction appeared to be useful in I-131 imaging.

• Journal of Radiation Protection and Research
• /
• v.39 no.4
• /
• pp.199-205
• /
• 2014

In the field of neutron detections, $^3He$ gas, the so-called "the gold standard," is the most widely used material for neutron detections because of its high efficiency in neutron capturing. However, from variable causes since early 2009, $^3He$ is being depleted, which has maintained an upward pressure on its cost. For this reason, the demands for $^3He$ replacements are rising sharply. Research into neutron converting materials, which has not been used well due to a neutron detection efficiency lower than the efficiency of $^3He$, although it can be chosen for use in a neutron detector, has been highlighted again. $^{10}B$, which is one of the $^3He$ replacements, such as $BF_3$, $^6Li$, $^{10}B$, $Gd_2O_2S$, is being researched by various detector development groups owing to a number of advantages such as easy gamma-ray discrimination, non-toxicity, low cost, etc. One of the possible techniques for the detection is an indirect neutron detection method measuring secondary radiation generated by interactions between neutrons and $^{10}B$. Because of the mean free path of alpha particle from interactions that are very short in a solid material, the thickness of $^{10}B$ should be thin. Therefore, to increase the neutron detection efficiency, it is important to make a $^{10}B$ thin film. In this study, we fabricated a $^{10}B$ thin film that is about 60 um in thickness for neutron detection using well-known technology for the manufacturing of a thin electrode for use in lithium ion batteries. In addition, by performing simple physical tests on the conductivity, dispersion, adhesion, and flexibility, we confirmed that the physical characteristics of the fabricated $^{10}B$ thin film are good. Using the fabricated $^{10}B$ thin film, we made a proportional counter for neutron monitoring and measured the neutron pulse height spectrum at a neutron facility at KAERI. Furthermore, we calculated using the Monte Carlo simulation the change of neutron detection efficiency according to the number of thin film layers. In conclusion, we suggest a fabrication method of a $^{10}B$ thin film using the technology used in making a thin electrode of lithium ion batteries and made the $^{10}B$ thin film for neutron detection using suggested method.