• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.231-231
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• 2010

GaN는 상온에서 3.4 eV의 넓은 밴드갭을 갖는 직접천이형 반도체로 우수한 전기적/광학적 특성 및 화학적 안정성으로 발광 다이오드 및 레이저 다이오드 등과 같은 광전소자 응용을 위한 소재로 많은 연구가 진행되어왔다. 특히, GaN 나노구조의 경우 낮은 결함밀도, 빠른 구동 및 고집적 특성 등을 가지기 때문에 효과적으로 소자의 광학적/전기적 특성을 향상시킬 수 있어 나노구조 성장을 위한 연구가 활발히 진행되고 있다. 최근에는 Metal organic vapor deposition (MOCVD), hot filament chemical vapor deposition (CVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE) 등 다양한 방법을 통해 성장된 GaN 나노구조가 보고되고 있다. 하지만 고가 장비 사용 및 높은 공정 온도, 복잡한 공정과정이 요구되며 크기조절, 조성비, 도핑 등과 같은 해결되어야 할 문제가 여전히 남아있다. 본 연구에서는 나노구조를 형성하기 위하여 보다 간단한 방법인 전기화학증착법을 이용하여 GaN 나노구조를 ITO 및 FTO가 증착된 전도성 glass 기판 위에 성장하였고 성장 메커니즘 및 그 특성을 분석하였다. GaN 나노구조는 gallium nitrate와 ammonium nitrate가 혼합된 전해질 용액에 Pt mesh 구조 및 전도성 glass 기판을 1cm의 거리를 유지하도록 담가두고 일정한 전압을 인가하여 성장시켰다. Pt mesh 구조 및 전도성 glass 기판은 각각 상대전극 (counter electrode) 및 작업전극 (working electrode)으로 사용되었고 전해질 용액의 농도, 인가전압, 성장시간 등의 다양한 조건을 통하여 GaN 나노구조를 성장하고 분석하였다. 성장된 GaN 나노구조 및 형태는 field emission scanning electron microscopy (FE-SEM)를 이용하여 분석하였고, energy dispersive X-ray (EDX) 분석을 통하여 정량 및 정성적 분석을 수행하였다. 그리고 성장된 GaN 나노구조의 결정성을 조사하기 위해 X-ray diffraction (XRD)을 측정 및 분석하였다. 또한, photoluminescence (PL) 분석으로부터 GaN 나노구조의 광학적 특성을 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.280-280
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• 2014

We report the fabrication and electroluminescent characteristics of GaN/InxGa1-xN microdonut-shaped light-emitting diode (LED) microarrays as variable-color emitters. The diameter, width, height, and period of the GaN microdonuts were controlled by their growth parameters and the geometrical factors of the growth mask patterns. For the fabrication of microdonut LEDs, p-GaN/p-AlxGa1-xN/u-GaN/u-InxGa1-xN heteroepitaxial layers were coated on the entire surface of n-GaN microdonuts. The microdonut LED arrays showed strong light emission, which could be seen with the unaided eye under normal room illumination. Additionally, magnified optical images of microdonut LED arrays exhibited microdonut-shaped light emissions having spatially resolved blue and green colors. Their electroluminescence spectra had two dominant peaks at 460 and 560 nm. With increasing applied voltage, the intensity of the blue emission peak increased much faster than that of the green emission peak, indicating that the color of the LEDs is tunable. We also demonstrated that EL spectra of the devices could be controlled by changing the size of microdonut LEDs. What we want to emphasize here with the microdonut LEDs is that they have additional inner sidewall facets which did not exist for other typical three-dimensional structures including nanopyramids and nanorods, and that InxGa1-xN single quantum well formed on the inner sidewall facets had unique thickness and chemical composition, which generated additional EL color. The origin of the electroluminescence peaks was investigated by structural characterizations and chemical analyses.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.300.2-300.2
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• 2014

테라헤르쯔(terahertz : THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지(meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한(low-temperature grown : LT) InGaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 LT-InGaAs:Be/InAlAs multi quantum well (MQW)를 well과 barrier를 가각 $10{\mu}m$ 씩 100주기 성장을 하였고 Ti와 Au를 각각 30, $200{\mu}m$로 dipole antenna를 제작 하였다. 이 때 Ti:sapphire femto-pulse laser (30 fs/90 MHz)를 excitation source로 사용하였을 때 9000 pA로 LT-InGaAs epilayer (180 pA)보다 50배 이상 큰 전류 신호를 얻을 수 있었다. THz 발생과 검출을 초소형, 초경량, 고효율로 하기 위해서는 fiber-optic를 이용해야 하는데 이때 분산과 산란 손실이 가장 적은 1550 nm 대역에서 많은 연구가 이루어 졌다. 780, 1560 nm의 mode-locking laser (90 fs/100 MHz)를 사용하여 현재 많이 이용되고 있는 Ti:sapphire femto-pulse laser와 비교하여 THz 특성 변화를 확인하는 연구를 진행 하고 있다.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.703-707
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• 2015

In this study, we investigated the effect of annealing conditions on the ferromagnetic resonance(FMR) of yttrium iron garnet ($Y_3Fe_5O_{12}$, YIG) thin film prepared on gadolinium gallium garnet ($Gd_3Ga_5O_{12}$, GGG) substrate. The YIG thin films were grown by rf magnetron sputtering at room temperature and were annealed at various temperatures from 700 to $1000^{\circ}C$. FMR characteristics of the YIG thin films were investigated with a coplanar waveguide FMR measurement system in a frequency range from 5 to 20 GHz. X-ray diffraction(XRD) and X-ray photoelectron spectroscopy(XPS) were used to characterize the phase formation, crystal structure and composition of the YIG thin films. Field dependent magnetization curves at room temperature were obtained by using a vibrating sample magnetometer(VSM). The FMR measurements revealed that the resonance magnetic field was highly dependent on the annealing condition: the lowest FMR linewidth can be observed for the $800^{\circ}C$ annealed sample, which agrees with the VSM results. We also found that the Fe and O composition changes during the annealing process play important roles in the observed magnetic properties.

• Journal of Information Display
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• v.10 no.4
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• pp.149-157
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• 2009

Reported herein is the architecture for a nonvolatile n-type memory paper field-effect transistor. The device was built via the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in resin with ionic additives), which act simultaneously as substrate and gate dielectric, using passive and active semiconductors, respectively, as well as amorphous indium zinc and gallium indium zinc oxides for the gate electrode and channel layer, respectively. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.

• The Journal of Korean Physical Therapy
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• v.14 no.4
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• pp.87-94
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• 2002

Low intensity laser irradiation is potential physical agent that triggers the muscle regeneration by previous study. In muscle regeneration, a number of growth factors also promotes that is triggered in response to muscle damage. The transforming growth factor(TGF)-$\beta$ is involved in the activation of cell proliferation and the inhibition of cell differentiation in muscle regeneration. This is secreted not only autocrine system but also paracrine and endocrine. Therefore, We investigated that effects of Gallium aluminum arsenide(GaAlAs) diode laser for the expression of TGF-$\beta$ on lumbar spinal cord after extensor digitorum muscle crush injury. After laser irradiation, the immunoreactivity of TGF-$\beta$ was increased bilaterally in gray mater of spinal cord. Especially, in 1 day, experimental group was highed than control, and in 3 day, lateral motor nucleus were storong immunoreactivy of TGF-$\beta$. Also, in 1 and 2 day, TGF-$\beta$ was showed in white mater as well as gray mater, but in 3 day, only showed in gray mater. These data may suggests to the establishment of laser irradiation on spinal cord for skeletal muscle injury.

• The Journal of Korean Physical Therapy
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• v.14 no.3
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• pp.226-237
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• 2002

This study was performed to investigate the effect of low power laser irradiation on epidermal growth factor(EGF) expression in the burned skin of the rats. Burns of about 3cm in diameter were created with 75'c water on the back of the rats, and the lesion of experimental group were irradiated on days 1, 2, and 3 postwounding. Control tensions were not irradiated. After burns, low power laser irradiation was applied by using 1000Hz, 830nm GaAlAs (Gallium-aluminum- arsenide) semiconductor diode laser. The expression of epidermal growth factor evaluated immunohistochemistry on mouse anti-EGF. The results of this study were as follows 1. In expression of EGF, the lesion of experimental group made EGF to more induce significantly than control tensions. 2. EGF immunoreactivity in burned skin were increased markedly 3 days after burns, and increased gradually from 1 day to 2 days in burns which is laser irradiation These data suggest that low power laser have wound healing effect in the burned skin of the rats.

• The Korean Journal of Nuclear Medicine
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• v.26 no.2
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• pp.355-359
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• 1992

The $^{67}Ga$ has somewhat long physical and biological half livies with 78 hours and 600 hours respectively, so we can get $^{67}Ga-scan$ images for 3 or more days after once injection of $^{67}Ga$. Furthermore $^{67}Ga$ scan would be useful to search some residual tumors after surgical removal of the tumors trapped with $^{67}Ga$. However $^{67}Ga$ bound with plasma proteins would be delayed in plasma clearance as approximately 10% of the dose remains in the plasma at 24 hours. If the remained $^{67}Ga$ in the plasma is redistributed into the surgical wound, we wouldn't evaluate the degree of the tumor remained after surgery. So the authors examined the amounts of the remained blood $^{67}Ga$ and the redistribution of the blood $^{67}Ga$ into the artificial wound with S or more centimeters in the diameter at the neck and chest of the rabbits. The results were as follows; 1) The $^{67}Ga$ remained in the plasma were 12%, 5.7%, 4.2% at 24, 48 and 72 hours after $^{67}Ga$ injection respectively. 2) The blood $^{67}Ga$ were redistributed into the artificial wound with 5.9% at 48 hours and 6.9% at 72 hours after $^{67}Ga$ injection.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.