• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.31.2-31.2
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• 2007

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.161-161
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.102-102
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• 2008

• Bulletin of the Korean Chemical Society
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• v.30 no.6
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• pp.1379-1382
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.206-206
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• 2002

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.162-163
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• 1998

• Korean Chemical Engineering Research
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• v.49 no.5
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• pp.600-604
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• 2011

Solution processed IGO thin films were prepared using a general chemical solution route by spin coating. The effect of the annealing temperature of IGO thin films based on the ratio of 2:1 of indium to gallium on crystallization was investigated with varying annealing temperature from $300^{\circ}C$ to $600^{\circ}C$. The electronic device characteristic of IGO thin film was investigated. The solution-processed IGO TFTs annealed at 300 and $600^{\circ}C$ in air for 1 h exhibited good electronic performances with field effect mobilities as high as 0.34 and 3.83 $cm^2/V{\cdot}s$, respectively. The on/off ratio of the IGO TFT in this work was $10^5$ with 98% transmittance.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.225-228
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• 2002

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

• Journal of radiological science and technology
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• v.41 no.4
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• pp.321-327
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• 2018

The purpose of this study is to compare PET imaging performance with Fluorine-18 ($^{18}F$) and Gallium-68 ($^{68}Ga$) for influence of physical properties of PET tracer. Measurement were performed on a Siemens Biograph mCT64 PET/CT scanner using NEMA IEC body phantom and Flangeless Esser PET phantom containing filled with $^{18}F$ and $^{68}Ga$. Emission scan duration(ESD) was set to 1, 2, 3, 4 and 5min/bed for $^{68}Ga$ and 1min/bed for $^{18}F$. The PET image were evaluated in terms of contrast, spatial resolution. Under same condition, The percentage of contrast recovery measured in the phantom ranged from 16.88% to 72.56% for $^{68}Ga$ and from 27.51% to 74.43% for $^{18}F$ and The FWHM value to evaluate spatial resolution was 10.96 mm for $^{68}Ga$ and 9.19 mm for $^{18}F$. For this study, $^{18}F$ produces better image contrast and spatial resolution than $^{68}Ga$ due to higher positron yield and lower positron energy ($^{18}F$: 96.86%, 633.5 keV, $^{68}Ga$: 88.9%, 1899 keV), The physical properties of PET tracer effect on the PET image. $^{68}Ga$ image applying ESD of 3, 4, 5min/bed were showed similar to $^{18}F$ image with ESD of 1min/bed. This study suggests that increasing ESD for acquiring $^{68}Ga$ PET image seem to be similar to $^{18}F$ image.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.5
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• pp.1193-1200
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• 2008

This paper describes a developed 5Watt power amplifier module fer mobile communication system using Gallium Nitride (GaN) devices. Three amplification stages such as pre-amplifier, driver amplifier, and power amplifier have been fabricated and measured separately in advance for incorporating the total power amplifier module and estimating the performances. In addition, a defected ground structure is combined with the output stage of the power amplifier module for improving harmonic rejection and adjacent channel power (ACP) characteristics. The measured performances of the GaN power amplifier module include 58dB,min of gain, 37dBm,min of output power, 50dBc,min of harmonic rejection, 35dBc,min of IMD3 for 2-tone input, and 35dBc,min of ACP at 2.1GHz frequency band.